INA1

INA111

11

INA1

11

High Speed FET-Input

INSTRUMENTATION AMPLIFIER
FEATURES

DESCRIPTION

FET INPUT: IB = 20pA max

The INA111 is a high speed, FET-input instrumentation amplifier offering excellent performance.

LOW OFFSET VOLTAGE: 500V max

LOW OFFSET VOLTAGE DRIFT:
5V/C max

The INA111 uses a current-feedback topology providing extended bandwidth (2MHz at G = 10) and fast
settling time (4s to 0.01% at G = 100). A single
external resistor sets any gain from 1 to over 1000.

HIGH SPEED: TS = 4s (G = 100, 0.01%)

HIGH COMMON-MODE REJECTION:

106dB min

Offset voltage and drift are laser trimmed for excellent

DC accuracy. The INA111s FET inputs reduce input
bias current to under 20pA, simplifying input filtering
and limiting circuitry.

8-PIN PLASTIC DIP, SOL-16 SOIC

The INA111 is available in 8-pin plastic DIP, and

SOL-16 surface-mount packages, specified for the
40C to +85C temperature range.

APPLICATIONS
MEDICAL INSTRUMENTATION
DATA ACQUISITION

V+
7 (13)
INA111

VIN

2
(4)

Feedback
A1
10k

10k

A3

RG
8

VIN

6
(11)

VO
G=1+

25k

(15)
3

DIP Connected
Internally

25k

(2)

(12)

A2
10k

(5)

10k

(10)

50k
RG

Ref

4 (7)
DIP

(SOIC)
V

International Airport Industrial Park Mailing Address: PO Box 11400, Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 Tel: (520) 746-1111 Twx: 910-952-1111
Internet: http://www.burr-brown.com/ FAXLine: (800) 548-6133 (US/Canada Only) Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132

1992 Burr-Brown Corporation

PDS-1143E
1

INA111

Printed in U.S.A. March, 1998

SPECIFICATIONS
ELECTRICAL
At TA = +25C, VS = 15V, RL = 2k, unless otherwise noted.
INA111BP, BU
PARAMETER

CONDITIONS

INPUT
Offset Voltage, RTI
Initial
TA = +25C
vs Temperature
TA = TMIN to TMAX
vs Power Supply
VS = 6V to 18V
Impedance, Differential
Common-Mode
Input Common-Mode Range
VDIFF = 0V
Common-Mode Rejection
VCM = 10V, RS = 1k
G=1
G = 10
G = 100
G = 1000

TYP

MAX

500 2000/G
5 100/G
30 + 100/G

10

100 500/G
2 10/G
2 +10/G
1012 || 6
1012 || 3
12

80
96
106
106

90
110
115
115

BIAS CURRENT
OFFSET CURRENT

MIN

TYP

MAX

UNITS

1000 5000/G
10 100/G

200 500/G
2 20/G

V
V/C
V/V
|| pF
|| pF
V

75
90
100
100

20

pA

0.1

10

pA

13
10
10
1

nV/Hz
nV/Hz
nV/Hz
Vp-p

0.8

fA/Hz

1 + (50k/RG)
1

Gain vs Temperature
50k Resistance(1)

G = 1, RL = 10k
G = 10, RL = 10k
G = 100, RL = 10k
G = 1000, RL = 10k
G=1

0.01
0.1
0.15
0.25
1
25

10000
0.02
0.5
0.5
1
10
100

G=1
G = 10
G = 100
G = 1000

0.0005
0.001
0.001
0.005

0.005
0.005
0.005
0.02

Nonlinearity

OUTPUT
Voltage
Load Capacitance Stability
Short Circuit Current
FREQUENCY RESPONSE
Bandwidth, 3dB

IO = 5mA, TMIN to TMAX

Overload Recovery

G=1
G = 10
G = 100
G = 1000
VO = 10V, G = 2 to 100
G=1
G = 10
G = 100
G = 1000
50% Overdrive

POWER SUPPLY
Voltage Range
Current

VIN = 0V

Slew Rate
Settling Time, 0.01%

dB
dB
dB
dB

G = 1000, RS = 0

NOISE VOLTAGE, RTI

f = 100Hz
f = 1kHz
f = 10kHz
fB = 0.1Hz to 10Hz
Noise Current
f = 10kHz
GAIN
Gain Equation
Range of Gain
Gain Error

INA111AP, AU

MIN

11

2
2
450
50
17
2
2
4
30
1
6

TEMPERATURE RANGE
Specification
Operating
JA

12.7
1000
+30/25

15
3.3

40
40

18
4.5

85
125

0.05

0.7
2

0.01
0.01
0.04

%
%
%
%

of
of
of
of

FSR
FSR
FSR
FSR

V
pF
mA

MHz
MHz
kHz
kHz
V/s
s
s
s
s
s

100

V/V
V/V
%
%
%
%
ppm/C
ppm/C

V
mA

C
C
C/W

Specification same as INA111BP.

NOTE: (1) Temperature coefficient of the 50k term in the gain equation.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.

INA111

ELECTROSTATIC
DISCHARGE SENSITIVITY

PIN CONFIGURATIONS
Top View

DIP

RG

RG

VIN

V+

+
IN

VO

Ref

Top View

This integrated circuit can be damaged by ESD. Burr-Brown

recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.

SOL-16 Surface Mount

NC

16 NC

RG

15 RG

NC

14 NC

VIN

13 V+

V+IN

12 Feedback

NC

11 VO

10 Ref

NC

ORDERING INFORMATION
PRODUCT

PACKAGE

INA111AP
INA111BP
INA111AU
INA111BU

8-Pin Plastic DIP

8-Pin Plastic DIP
SOL-16 Surface-Mount
SOL-16 Surface-Mount

TEMPERATURE RANGE
40C
40C
40C
40C

to
to
to
to

+85C
+85C
+85C
+85C

PACKAGE INFORMATION

NC
PRODUCT
INA111AP
INA111BP
INA111AU
INA111BU

ABSOLUTE MAXIMUM RATINGS(1)

PACKAGE
8-Pin Plastic
8-Pin Plastic
16-Pin Surface
16-Pin Surface

PACKAGE DRAWING
NUMBER(1)

DIP
DIP
Mount
Mount

006
006
211
211

NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.

Supply Voltage .................................................................................. 18V

Input Voltage Range .......................................... (V) 0.7V to (V+) +15V
Output Short-Circuit (to ground) .............................................. Continuous
Operating Temperature ................................................. 40C to +125C
Storage Temperature ..................................................... 40C to +125C
Junction Temperature .................................................................... +150C
Lead Temperature (soldering, 10s) ............................................... +300C
NOTE: Stresses above these ratings may cause permanent damage.

INA111

TYPICAL PERFORMANCE CURVES

At TA = +25C, VS = 15V, unless otherwise noted.

GAIN vs FREQUENCY

COMMON-MODE REJECTION vs FREQUENCY

10k

120
Common-Mode Rejection (dB)

G = 1k

Gain (V/V)

1k
G = 100
100
G = 10

10

G=1
1

100
80

G = 1k

60
G = 100
40
G = 10
20
G=1
0

0.1
1k

10k

100k

1M

10

10M

100

1k

INPUT COMMON-MODE VOLTAGE RANGE

vs OUTPUT VOLTAGE

1M

120
y A1
ed b
Limit ut Swing
tp
+ Ou
VD/2

10
5

VO

VD/2

Limit
+ Ou ed by A
tput
Swin2
g

Power Supply Rejection (dB)

Common-Mode Voltage (V)

100k

POWER SUPPLY REJECTION vs FREQUENCY

15

VCM
(Any Gain)

A3 Output
Swing Limit

A3 + Output
Swing Limit

Lim
it
O ed by
utpu
A
t Sw 2
ing

10
15
15

by A 1 g
in
ited
Lim put Sw
t
u
O

100
80
G = 1k

60

G = 100

40

G = 10
G=1

20
0

10

10

10

15

100

1k

10k

100k

1M

Frequency (Hz)

Output Voltage (V)

INPUT-REFERRED NOISE VOLTAGE vs FREQUENCY

SETTLING TIME vs GAIN

1k

100

100

G=1

G = 10
G = 100, 1k

10

Settling Time (s)

Input-Referred Noise Voltage (nV/Hz)

10k

Frequency (Hz)

Frequency (Hz)

0.01%

10

0.1%

1
1

10

100

1k

10k

INA111

10

100
Gain (V/V)

Frequency (Hz)

1000

TYPICAL PERFORMANCE CURVES (CONT)

At TA = +25C, VS = 15V, unless otherwise noted.

INPUT BIAS CURRENT vs TEMPERATURE

50

200

25

100

G 10

100

25
G=1

200

50

10n

10m

75

25

25

50

75

100

Temperature (C)

INPUT BIAS CURRENT

vs DIFFERENTIAL INPUT VOLTAGE

INPUT BIAS CURRENT

vs COMMON-MODE INPUT VOLTAGE

125

10m
15.7V

Input Bias Current (A)

10
G = 10 G = 100

G = 1k

+1p
G=1

G = 10
+10p

G = 1k

100

10

+1p
+15.7V

+15.7V
10

1m

G = 100

+100p
5

10

15

+10p

20

20

15

Differential Overload Voltage (V)

NOTE: One input grounded.

10

10

15

20

Common-Mode Voltage (V)

OUTPUT CURRENT LIMIT vs TEMPERATURE

MAXIMUM OUTPUT VOLTAGE SWING vs FREQUENCY

50

30
25

Short-Circuit Current (mA)

Peak-to-Peak Amplitude (V)

Input Bias Current (A)

50

Time From Power Supply Turn-On (Minutes)

100

15

1p

0.01p

1m

20

10p

15.7V

G=1

IOS

100p

0.1p

300

75

Ib

1n
Input Bias Current (A)

300
Referred-to-Input VOS Change (V)

Referred-to-Input VOS Change (V)

OFFSET VOLTAGE WARM-UP vs TIME

75

20
15
10
5
0

40

30
+ICL

ICL
20

10

0
1k

10k

100k

1M

75

10M

50

25

25

50

75

100

125

Temperature (C)

Frequency (Hz)

INA111

TYPICAL PERFORMANCE CURVES (CONT)

At TA = +25C, VS = 15V, unless otherwise noted.

TOTAL HARMONIC DISTORTION + NOISE

vs FREQUENCY

QUIESCENT CURRENT vs TEMPERATURE

1

3.5

3.4

G = 1k

0.1
THD + N (%)

Quiescent Current (mA)

VO = 3Vrms, RL = 2k
Measurement BW = 80kHz

3.3

3.2

Single-Ended Drive G = 1
G = 100

0.01

G = 10
0.001

Differential Drive G = 1

3.1
0.0001

3.0
75

50

25

25

50

75

100

20

125

100

1k

10k 20k

Frequency (Hz)

Temperature (C)

LARGE SIGNAL RESPONSE, G = 100

SMALL SIGNAL RESPONSE, G = 1

+10
+0.1
0

0.1
10

10

20

10

Time (s)

Time (s)

LARGE SIGNAL RESPONSE, G = 100

SMALL SIGNAL RESPONSE, G = 1

+10

+0.1

10

0.1

10

20

Time (s)

INA111

10
Time (s)

20

20

APPLICATION INFORMATION

The 50k term in equation 1 comes from the sum of the two
internal feedback resistors. These are on-chip metal film
resistors which are laser trimmed to accurate absolute values. The accuracy and temperature coefficient of these
resistors are included in the gain accuracy and drift specifications of the INA111.

Figure 1 shows the basic connections required for operation

of the INA111. Applications with noisy or high impedance
power supplies may require decoupling capacitors close to
the device pins as shown.
The output is referred to the output reference (Ref) terminal
which is normally grounded. This must be a low-impedance
connection to assure good common-mode rejection. A resistance of 2 in series with the Ref pin will cause a typical
device with 90dB CMR to degrade to approximately 80dB
CMR (G = 1).

The stability and temperature drift of the external gain

setting resistor, RG, also affects gain. RGs contribution to
gain accuracy and drift can be directly inferred from the gain
equation (1). Low resistor values required for high gain can
make wiring resistance important. Sockets add to the wiring
resistance, which will contribute additional gain error (possibly an unstable gain error) in gains of approximately 100
or greater.

SETTING THE GAIN

Gain of the INA111 is set by connecting a single external
resistor, RG:
G = 1 + 5 0k
RG

DYNAMIC PERFORMANCE
The typical performance curve Gain vs Frequency shows
that the INA111 achieves wide bandwidth over a wide range
of gain. This is due to the current-feedback topology of the
INA111. Settling time also remains excellent over wide
gains.

(1)

Commonly used gains and resistor values are shown in

Figure 1.

V+
0.1F
Pin numbers are
for DIP package.

VIN

7
INA111

2
A1
10k

)
VO = G (VIN VIN

10k

50k
G=1+
RG

25k
6

A3

RG

25k

Load

VO

+
VIN

A2
10k

DESIRED
GAIN
1
2
5
10
20
50
100
200
500
1000
2000
5000
10000

RG
()

NEAREST 1% RG
()

No Connection
50.00k
12.50k
5.556k
2.632k
1.02k
505.1
251.3
100.2
50.05
25.01
10.00
5.001

No Connection
49.9k
12.4k
5.62k
2.61k
1.02k
511
249
100
49.9
24.9
10
4.99

Ref

10k

0.1F

Also drawn in simplified form:

V

VIN
RG
+
VIN

INA111

VO

Ref

FIGURE 1. Basic Connections

INA111

INPUT BIAS CURRENT RETURN PATH

The INA111 exhibits approximately 6dB rise in gain at

2MHz in unity gain. This is a result of its current-feedback
topology and is not an indication of instability. Unlike an op
amp with poor phase margin, the rise in response is a
predictable +6dB/octave due to a response zero. A simple
pole at 700kHz or lower will produce a flat passband
response (see Input Filtering).

The input impedance of the INA111 is extremely high

approximately 1012. However, a path must be provided for
the input bias current of both inputs. This input bias current
is typically less than 10pA. High input impedance means
that this input bias current changes very little with varying
input voltage.

The INA111 provides excellent rejection of high frequency

common-mode signals. The typical performance curve,
Common-Mode Rejection vs Frequency shows this behavior. If the inputs are not properly balanced, however,
common-mode signals can be converted to differential sig
+
nals. Run the VIN and VIN connections directly adjacent each
other, from the source signal all the way to the input pins. If
possible use a ground plane under both input traces. Avoid
running other potentially noisy lines near the inputs.

Input circuitry must provide a path for this input bias current
if the INA111 is to operate properly. Figure 3 shows various
provisions for an input bias current path. Without a bias
current return path, the inputs will float to a potential which
exceeds the common-mode range of the INA111 and the
input amplifiers will saturate.
If the differential source resistance is low, the bias current
return path can be connected to one input (see the thermocouple example in Figure 3). With higher source impedance,
using two resistors provides a balanced input with possible
advantages of lower input offset voltage due to bias current
and better high-frequency common-mode rejection.

NOISE AND ACCURACY PERFORMANCE

The INA111s FET input circuitry provides low input bias
current and high speed. It achieves lower noise and higher
accuracy with high impedance sources. With source impedances of 2k to 50k the INA114 may provide lower offset
voltage and drift. For very low source impedance (1k),
the INA103 may provide improved accuracy and lower
noise.

Crystal or
Ceramic
Transducer

OFFSET TRIMMING

INA111

1M

The INA111 is laser trimmed for low offset voltage and

drift. Most applications require no external offset adjustment. Figure 2 shows an optional circuit for trimming the
output offset voltage. The voltage applied to Ref terminal is
summed at the output. Low impedance must be maintained
at this node to assure good common-mode rejection. The op
amp shown maintains low output impedance at high frequency. Trim circuits with higher source impedance should
be buffered with an op amp follower circuit to assure low
impedance on the Ref pin.

1M

Thermocouple

INA111

10k

INA111

VIN

V+

VO
RG

INA111

+
VIN

100A
1/2 REF200

Ref

OPA177
10mV
Adjustment Range

Center-tap provides
bias current return.

100(1)
10k

FIGURE 3. Providing an Input Common-Mode Current Path.

(1)

INPUT COMMON-MODE RANGE

100(1)

The linear common-mode range of the input op amps of the

INA111 is approximately 12V (or 3V from the power
supplies). As the output voltage increases, however, the
linear input range will be limited by the output voltage swing
of the input amplifiers, A1 and A2. The common-mode range
is related to the output voltage of the complete amplifier
see performance curve Input Common-Mode Range vs
Output Voltage.

100A
1/2 REF200

NOTE: (1) For wider trim range required

in high gains, scale resistor values larger
V

FIGURE 2. Optional Trimming of Output Offset Voltage.

INA111

the 1N4148 may have leakage currents far greater than the
input bias current of the INA111 and are usually sensitive to
light.

A combination of common-mode and differential input

voltage can cause the output of A1 or A2 to saturate. Figure
4 shows the output voltage swing of A1 and A2 expressed in
terms of a common-mode and differential input voltages.
For applications where input common-mode range must be
maximized, limit the output voltage swing by connecting the
INA111 in a lower gain (see performance curve Input
Common-Mode Voltage Range vs Output Voltage). If
necessary, add gain after the INA111 to increase the voltage
swing.

INPUT FILTERING
The INA111s FET input allows use of an R/C input filter
without creating large offsets due to input bias current.
Figure 6 shows proper implementation of this input filter to
preserve the INA111s excellent high frequency commonmode rejection. Mismatch of the common-mode input capacitance (C1 and C2), either from stray capacitance or

Input-overload often produces an output voltage that appears

normal. For example, consider an input voltage of +14V on
one input and +15V on the other input will obviously exceed
the linear common-mode range of both input amplifiers.
Since both input amplifiers are saturated to the nearly the
same output voltage limit, the difference voltage measured
by the output amplifier will be near zero. The output of the
INA111 will be near 0V even though both inputs are
overloaded.

V+

D1

D2

VIN
R1

INPUT PROTECTION
Inputs of the INA111 are protected for input voltages from
0.7V below the negative supply to 15V above the positive
power supply voltages. If the input current is limited to less
than 1mA, clamp diodes are not required; internal junctions
will clamp the input voltage to safe levels. If the input source
can supply more than 1mA, use external clamp diodes as
shown in Figure 5. The source current can be limited with
series resistors R1 and R2 as shown. Resistor values greater
than 10k will contribute noise to the circuit.

+
VIN

INA111

RG

R2

D3

VO

D4

V+

Diodes:

2N4117A
1pA Leakage

A diode formed with a 2N4117A transistor as shown in

Figure 5 assures low leakage. Common signal diodes such as
FIGURE 5. Input Protection Voltage Clamp.

VCM

V+

G VD
2

INA111
A1
10k

VD
2

10k

25k
A3

RG

G=1+

50k
RG

VO = G VD

25k

VD
2
A2

10k

VCM

VCM +

G VD
2

10k

FIGURE 4. Voltage Swing of A1 and A2.

INA111

mismatched values, causes a high frequency common-mode

signal to be converted to a differential signal. This degrades
common-mode rejection. The differential input capacitor,
C3, reduces the bandwidth and mitigates the effects of
mismatch in C1 and C2. Make C3 much larger than C1 and
C2. If properly matched, C1 and C2 also improve CMR.

Surface-mount package
version only.

VIN
RG

OUTPUT VOLTAGE SENSE

(SOL-16 Package Only)

INA111
Ref

+
VIN

The surface-mount version of the INA111 has a separate

output sense feedback connection (pin 12). Pin 12 must be
connected, usually to the output terminal, pin 11, for proper
operation. (This connection is made internally on the DIP
version of the INA111.)

C1
1000pF

Feedback

Load

Equal resistance here preserves

good common-mode rejection.

FIGURE 8. Remote Load and Ground Sensing.

The output feedback connection can be used to sense the

output voltage directly at the load for best accuracy. Figure 8
shows how to drive a load through series interconnection
resistance. Remotely located feedback paths may cause
instability. This can be generally be eliminated with a high
frequency feedback path through C1.

C1

VO

INA111

RG

C2

Ref

R1

f3 d B =
C1

R1

1
C

4 R1 C 3 + 1
2
VO

INA111

C3

R2

fc =

1
2R1C1

NOTE: To preserve good low frequency CMR,

make R1 = R2 and C1 = C2.

VIN

+
VIN

R2

FIGURE 9. High-Pass Input Filter.

Ref

C2

R1 = R2
C1 = C2
C3 10C1

6V to 18V
Isolated Power
V+

V
15V

FIGURE 6. Input Low-Pass Filter.

VIN

INA111

ISO122

VO

+10V
+
VIN

Ref

G = 500
Bridge
RG
100

INA111

VO

Isolated
Common

Ref

FIGURE 10. Galvanically Isolated Instrumentation

Amplifier.
FIGURE 7. Bridge Transducer Amplifier.

INA111

10

VIN
OPA177

VIN
+

RG

INA111
Ref

C1
50nF

VO

R1
1M

C1
0.1F

R1
10k
RG

INA111
1
f3dB =
2R1C1

OPA602

R2

Ref
IL =

= 1.59Hz

Load

Make G 10 where G = 1 + 50k

RG

FIGURE 11. AC-Coupled Instrumentation Amplifier.

VIN
G R2

FIGURE 12. Voltage Controlled Current Source.

VIN

22.1k
22.1k

+
VIN

511

VO

INA111
Ref

100
NOTE: Driving the shield minimizes CMR degradation
due to unequally distributed capacitance on the input
line. The shield is driven at approximately 1V below
the common-mode input voltage.

For G = 100
RG = 511 // 2(22.1k)
effective RG = 505

OPA602

FIGURE 13. Shield Driver Circuit.

+5V

Channel 1

VIN

MPC800
MUX

Channel 8

VIN

INA111

RG

ADS574

12 Bits
Out

Ref

FIGURE 14. Multiplexed-Input Data Acquisition System.

11

INA111

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.