lect tA Desi tiot al Chapter 1 Exercise Solutions BLt ny = (2.1 « 10'* yo exp ( —————5__. (10) (300) » (saeco) m= 18 x10" em Ge nm, = (1.66 x 107*)(300)/? exp (aa, Sm! ny = 2.40 x 10? m=? E12 Si nm, = (5.23 = 10°*)(400)"/? exp (aes) GaAs 24) (400)272 ais ) ny = (2.1 x 10°*)(400)°7? exp (Ga 2.44 «50? cm? Ge —0.66, . 13) ¢400)°? exp (——= 9:88 __ ny = (1.66 x 10'*){400)*? exp (aa * aT) E13 &. majority carmier: 9 = 10!" cm=* minority cartier: bo ne = My N, ty carrier: ng = 5 x 20°* cm@* nd _ (1.5 « 1079)? Aes pos Bw Be a 5 x 10t om EL4 (a) 1, =5x10" em, p, Sx 10’ em” P=po+sp= plot cm EL6 Jack = (10)(15) > 1508/ em? ELT vein (284) rot 0.025 u (0.928)10 | CS 1F ( ¢ Vy = 0.697 V bo Ve = (0.026) ( ro G5 x OF Vou 20.817 VCircuit sk = (0.026) In [Z 7“ an 08 ee(2 + ce) = Cyo(7.61)~ 7 (0.362) Cyo = 2.21 pE Et10 v; ate Tolexe (2) - 4 For ¥p =0.5: 1 5107'*exp For Vp = 0.8: 1= 107 exp For¥p=0.7: {= 107 *exp So we have Yo 1 05 2.25 4A 06 0.105 mA 07 © 493 ma db. -107** A both cases ELl! vi 1 = tafexe (2) -1] so? = (10) fore (3335) — 1] (0.026) In (10 7 BL12 ELI3 ns AT = 100°C AVp = 2x 100 = 200 mV > Vp = 0.650 — 0.2 Vp = 0450 Relka — eb Tp + Voss Wo Vo Tes 1077 A Ves = IpR+ Vo and In = Isexp (2) So 45 1p(4) + Vp 9 ip =(4~Vo)/4 mA and Yo T0326 3 teen (2) = 19 = 10709 ( Ine sexp (12) = Io 107 exp mA By tal and error: Ip = 0.864mA and Vp = 0.535 V EL.14din; Chapter t: Exercise Soluti ELIS Power dissipation in diode = LoVo . 1.05 mW’ = fo(0.1) > Jp = Lima Veg =¥,_W=07 gy Re TS = Rath « rp * ELIT at 3 Ve | - - e ane BLS Ip = ESE 2 Ot 8 yy 21.08 ma ® ELI . % sono (#2) ecu f le Ye = vein (2) Yo = (a.026)18 ( 22 pr juncsion: Vo = (0.026)in ( 2°; ta vp 0.50 10 oy Schonky Diods: Vp = (9.026) in Ge Ie of Cm) a. ¥p = 6.299 V od oa E120 or the pa junction diode oe a jun a8 ra Geers) vo = vein (2) 0,026) In Ts BIG Vo = 0.6971 V Schorkey diode volige will be smaller R = Vp = 0.5871 0.265 = 0.4221 V — Yo Ip = Ieexe (2 +3; * 2 = leew (#2) Np2 eV \o bein - Ise = les Lot 107 4 CAZIT) oe To)Electronic Circuit Analysis and Design, 2" edition Solutions Manual E20 Power =I. Vz 10 =1(5.6) > P= 1.79 mA 3.6 EL.22 + + Veo a Vz = Veo +lerz So Vzo = V2 -ferz Vz0 = 5.20 — (107*)(20) = 5.20 - 0.02 = 5. ‘Then Vz = 5.18 + (10 x 107") (20) => Ve = 5.38 VChapter 1 Problem Solutions Ld (a) serie et (i) Silicon, T=275K ny, = (523x105 275)" sr{esaio*)(279) 1, = 190x10? cm? Gi) T=325K ny =(523x10'5)(325)"7 «Vase ks) Lel0" cm? (0) GaAs (i) T=275K " = (24z108\(275)°2 61ers 1, = 134x10° om? Gy T=325K nn, = (210x10")(325)?2 = t/Heere}o39) 1, = 1.63x10" cnt? i2 a ae Br? xég . o (Ga ed sqpsi2 a1) tol? = 5,23 x 10!*7% o (getty) 1.91 x 10~ = T?? exp (-s 1) By trial and error, T = 367° K boomy = 10° em= 18 =a 10? = 5.23 x 10°19? exp e E — 1.91 x 1977 = T°? exp (Ss a) By trial and error, T = 268° K 13 "4 edit lanual bo Ng = Sx 10! cm? = n-type to = Ng =5 x 10" em 18) ¢300)° xis ny = (2.10 x 10!*)(300)°" exp Gate) = (2.10 « Lo'*)(300)" (1.65 x 107") = 1,80 x 10° em oY 10°}? poe ae OEIOT yw 648 0 1074 cm? 14 . pos Ne = 10" cm (1s x 10%)? Ta 45) 300)? =0.66 = (1.66 x 10"*)(300)"!* exp ia Sa = i0=* (G0) = (1.68 « 10**)(300)"? (2.79 x 107%) = 24x10" cm 2 13)2 no =e Ge = ng = 6.76 x 10" em? Pe 1s (a) 9, = 5x10" om? 2 (15x10!) pat (sng a p,= 45x10" om? ny Se (b) n, >> p, => aetype {o) n, = N, =5x10" em? 16 2. Add Donors Nastxig" on™ b. Want po = 10° em™? = 22/Ne So n? = (20°) (7 x 10") = 7 x 10 = 900) 7 10? = (5.23 x 10!9)"7 exp ( (a6 i By oral and error, T = 324° KElectronic Circuit Analysis and Design, 2" edition Solutions Manual 17 1=J-A=0BA 13 (2.2)15\(10} = 1 =33mA JacBodsia8 £12 g = 7.08 (ohm ~ em)-" Lo (@) For n-type, oz eL,N,= 6x10 \8S00)N, For 10° Nz $10” cm” => 136< oS 136x10" (Q—cm)" ) J=08 =0(01) => 0136S J $136x10° A/em* 10/7 410" = p= 1.01 x10 om (204) (208) iain | 7 ose 4 Vag = (0.026) al (20!) (10") Tania] > bn = (0. oxi (20°*) 0") (5x10) ce. Vou = (0.026) wf 1.12 {10") (20!) 8 Yes (0006) | Oa => My = 1.05 V (10) 084) (18 x 108)" Va. = (0.026) In oe 3h b. Vig = (0.026) In = Vn = 1.23-V Lav (18 108) 1.13 oon y, (10) ( 15x10") Vy = 01637 ¥ For N,=10" cm, Vy =0817V oxi 0.637 T a ae ar ae NM Cen) Lig wr=tono (2) roe ye 200 0.01733 2528.4 250 0.02167 3952.8 300 (0.076 5196.2 350 0.03033 6547.9 400 0.03467 3000.0 450 0.0390 9545.9 $00 0.04333 11,1803 2.1 x 10") (7°) exp (aes) ) a = vein (&eee Chapter 1: Problem Solutions Tt a, Vin 200 1.256 1.405 250 6.02x 10? 1.389 3001.80 x 10° 1370 350 oa xoh 1.349 400 24d 10? 1.327 450 2.80 x10 1.302 50 2.00 x10 1.277 uns vas 200 So zoo AAD Mo 150 Seo Te) Lis va CG =Cn(i+ 74) (2x v= tomas Pa a Va=1V Lyon : c= (1+ she) = CO, = 0.634 9) > Ve=sV¥ s yun : o=t(t+ gig) = comer 116 vy @ ¢ oft) vy For V,=5V. sy C, ={0.02) — = 0.00743 pF in Gr ? For V,=15V, sy" C,=(002{ 1+) =00118 pF { +8) , ogra +0118 (avg) = ; = 0.00962 pF ¥e(t) = vel final) +(ve (initial) — vc(final))er”* where = RC= RC, (avg) = (47110°X0.00962x10"") or T=452x10" 5 Then ve(t)=15=0+(5-O)e™" 3 arn ath( 3] 15 ‘ iS. (b) For ¥,=0¥, 002 pF For ¥,=35V. 35) C, =(0.02} 1+— = 000863 pF ant {+53} a 002 +0.00863 Cow) - Ses 10143 pF T= RC, (avg) =672410 5 Vo(t) = vel final) +(v¢(initial) — vel final))e" 35=5+(0-S)e™" =(1-e**") so that 9x10" 17 _ (2o*) (108) . Vou = (0.026) 10 Pee pee] OT a Ve siv Loyca ¢, =(028)(1+ ste) = 0.164 pF 1 1 1 TURE * eben yale ey fo = 8.38 MHzis a1 ign, 2" edition & VReiV yn Cy = (0. asi(1 4+ oi) = 0.0863 pF ann) 1 f= ERO To) fa = 13.2 MHz 118 ats Ie[ex (#) - | Yo ~0.90 =exp (<2) -1 °() 0.90 = 0.10 == (#) = Vp = Vrin (0.10) > Vp = —0.0599 V 119 13 (107?) exp (ae f= (107) exp (& T= (107) oo (4 Solutions Mant 1.20 (a) f= i,(et 1) ee 1) a ore o). (0026)te (Ber) 1.21 a. Tp 8 trex (2B 6 10 = tee ( Is = 2.03 x 107 A 15 0.8 fo = (208 x10") exp (BE Ip = 46.8 mA 4,22 1, doubles for every 5C increase in temperature 1,510 A atT = 300K For fg =OSx10"? A => T=295K For f,=S50x107 A, (2)"=50 =n =564 Where 1 equals number of SC increases. Then AT =(564)(3)= 28.2 So 2955 TS 3282Kter | lem Solut 1.23 1.26 Is(T)_ gars weiss’ asx a Tey TP. aT este £5(100} 155/5 2 Fass} 2.147 x 10! Vr@100°C = 373°K => Vp = 0.03220 Vr@ ~ 35°C => 216°K = Vp 01865 0.6 o> (saa) ne = (2147 x 10°) ¢ 0.0822 0.6 em? \ o01865 (2.147 x 10°) (1.297 20 (8.374 108) 10? Ion Vor a) * f= = onn( Ve AY>D ‘pn (10) => AVp = 59.9 mV = 60 m¥ Vee = b AD ‘p n(100) => AVp = 119.7 mV = 1200 mV Io 04S = ToRrn + Vo, Yo = Vein (2) 1.25 ‘By ofa! and error: a Io = 26 ud, Vp =04V RetoMsn 1.27 * ~ + Mpg 2 V, eT Vo 1.5 = [o(10 10") + Vp and noble) Ig=2x108a ‘ ~) Jexp (¥2 1.8 = (10 « 19") (30 10 » [exe ($2 ~i)4+ve yw cosov Ye) day teem () = (2 or) een (282 oa few (%2) 1] +¥2 fem trem (GE) = (aie) en (5 By trial and error, > = 0.046 V = 2.105 mA 15 ~ 0.046 os ‘Then 1p = SS = Ip 3 145 BA ia= TR = 060 mA di = hh + Ig = 2.705 mA b. Reverse-Bias. 7 Ls ts=30na Yo = Vein (£) = (o0ns)ta (AE) tale Ts x10 Va = (30 x 107*){20 x 10") = 0.30 ¥ Vp = -1L5 +03 > VvIs=5x10-P A 120.50 mA Yo =(0.026)la Ga) Yp = 0479 V SaIR+¥o+¥ = (0.5 x 1077} (4.7 x 107) +.0.479+V Ysairy (b) P= 1,Vy =(05)(0.479) or P=024mW 1.29 (a) Assume diode is conducting. Then, Vp =V,=0.7¥ 02 So that Iyq = 55 => 233 44 In= ae = 504A Then Ly = Iq: — Ign =50-233 Or Ip = 268.7 WA (b) Let R, =50kQ. Diode is cutoff. vs (12) =045¥ 230+ eas }= Since V, f= 0,308 mA For reverse bias [y=0, ¥p=-15¥ 13s ares PE = OOO 0025 un = 2602 2g. 1 ig = 0.05f0q = 50 uA peak-to-peak va = tara = (26)(50) WA = vg = 1.30 mV_peake b. For{ng =0.1mA =r, ig = 0.05I pg = 5 wA peak-to-peak Ya = bate = (2605) ZV = vg =1,30 mV peak-to-peak 136 a. diode resistance re = Ve/i wo (atn)=(x Vz “= (atm)en Vr ) 026 Ve +TRs 26 + (1)(0-26) Ye, 0.026 v5 0.026 + (0.19(0.26) - 0.026 vs 0.026 + (0.01)(0.26) vavem(Z) . pn junction, Vz = (0.026)in (SS) Yj =0.500v 00 x 10-* Schottky diode, Vz = (0.026) la (————— 10 Y=o200¥ 1.38 took . aw erie pens ia Schoey: f= Is exp (4) Vela ( =(0 oreyta(S Sx = 0.1796 V Then Vq of pn junction = 0.1796 + 0.30 = 0.4796 iss fps 487x107 AElectronic Circuit Analysis and Design, 2™ edition Solutions Manual 139 pnjunction fp =05 mA fy = 1,6" =V, =V, u(2) Is Theo Vp =(0.026) nf Schottky diode ¥, =(0026)10{ 95207) -o2siv 10" Then R= vA er) ¥ols = 0521 80.2, hheh=05x 107 Ve - 7 - sic10" aap (#2) +10" ep (#2) 205 107% Vp = (0.026) In ) = Ye =o.ses Schortky diode, J, = 0.49999 mA pn junction, J; = 0.00001 mA &) Lal 1a ap (8) 2st (2) Vr Voi +Vo2 = 0.9 rn -« .9 = Vor 10 exp (Yt) = cso np (22 HE Vr Vr Va = Vzo = 5.6 V at Iz = 0.1 mA 72 =109 Jarz = (0.1)(10) =1mV Vee = 5.599 a Rmos = 110 o50+ 0.01 3.399 + (0,00863)(10} 10 ~ 5.599 fa = 8 t= "Rez Vz = Vao+lzrz Vp = Vy = 5.685 28.63 mA ’ VesallVelze= Vg = Vy = 5.389 + (0.01059)(10) = 5.705 V Veg = 9 V = Iz = 2a 88 = 6.669 mA. 051 Vz = Vo = 5.399 + (0.006669)(10) = 5.1 AVs = 5.708 ~ 5.666 > OV; = 0.039 V )Chapter 1: Problem Solutions. eo lath Ye 12 Yes-V Leg ad = Ve _ %~5.599 | 050 ~~ oo +2 10 | 5.509 1 rae 330 * D010 alae Toro * 4] 20.0 + 559.9 = ¥o(102.5) HssssaV 1.42 als a ig=1) mA Pz = (11)(6.8} = Pz = 74.8 mW » = Bo, pms = RaU 5 300 = 135% Pz = (26)(6.8) = 176.8 mW 76.8 — 74.8 % Tae * 100 = 136% 1.43 Iarz = (0.1)(20) = 2mV Vio = 6.8 - 0.002 = 6.798 V a Re 10 ~ 6.798 5 = depbor 7 fe 6158 A Vo = Vz = Veo + Lore = 6.798 + (0.006158}(20) Mo = 6.921 V da bb fslzeth We-0.798 | % v0 + 1 6.198 toa ao [fata +4] 459.9 = Va(53) Ye = 6.791 V AM = 6.791 - 5.921 y= 013 V