Optik 123 (2012) 18741878

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Optik
journal homepage: www.elsevier.de/ijleo

Analysis and optimization of a new photonic crystal lters in near ultraviolet

band
Huihuan Guan a,b , Peide Han a,b, , Yuping Li a,b , Xue Zhang a,b , Wenting Zhang a,b
a
b

College of Materials Science and Engineering, Taiyuan University of Technology, No. 79, Yingze Street, Wanbolin District, Taiyuan 030024, China
Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024, China

a r t i c l e

i n f o

Article history:
Received 26 October 2011
Accepted 9 March 2012

Keywords:
Photonic crystal
Omni-directional reection
Photonic crystal lter
Ultravioletvisible range

a b s t r a c t
Transmission characteristics of one-dimensional (1D) photonic crystals (PCs) heterostructures containing
defective are studied using the transfer matrix method. The key is to search the best combination style
for different 1D PCs to form heterostructures. It is shown that the non-transmission range over near
ultraviolet and visible range can be substantially enlarged and the phenomenon of narrow band PC lter
in near ultraviolet can be realized by adjusting the repeat cycle counts of various photonic crystals. The
theoretical results on multiple heterostructures containing TiO2 /SiO2 multilayer lms are presented.
With a perfect omni-directional and high peak transmission lters for TE modes, this structure opens
a promising way to fabricate ultra-narrow band PC lters with wide non-transmission range in near
ultraviolet and visible range.
2012 Elsevier GmbH. All rights reserved.

1. Introduction
Since last two decades, photonic band gap (PBG) materials, which are structured materials with periodically modulated
dielectric function and showing electromagnetic band gaps, have
attracted considerable interest because of the many novel properties in respect of fundamental physics and their potential
applications in devices [1,2]. Recently, much attention has been
paid to the properties of defect modes that emerge in the PBG
because of the existence of structural defects [3,4]. Defect mode can
be readily achieved by introducing structure defect into a perfect
photonic crystal (PC), and this defect state allows the transmission of light at corresponding frequency. Narrow band PC ltering
phenomena of one-dimensional (1D) periodic structures have been
studied extensively [57]. However, the non-transmission range
of a 1D PC lter constructed by a single 1D dielectric PC is sometimes narrow. Thus the application of the narrow band PC lters is
restricted. If several 1D PCs with different layer thickness or different lling factor are combined, multiple heterostructures are
formed. Since different photonic crystals have different band gap
widths, multiple heterostructures can show many characteristics,
for example, some literature revealed that the non-transmission
range can be enlarged using heterostructure [810]. The periodic

Corresponding author at: College of Materials Science and Engineering, Taiyuan

University of Technology, No. 79, Yingze Street, Wanbolin District, Taiyuan 030024,
China. Tel.: +86 351 6018843; fax: +86 351 6010311.
E-mail addresses: hanpeide@126.com, hanpeide@tyut.edu.cn (P. Han).
0030-4026/$ see front matter 2012 Elsevier GmbH. All rights reserved.
http://dx.doi.org/10.1016/j.ijleo.2012.03.050

structures can, however, be optimized by introducing defects in

multiple heterostructures.
It is well known that, as the incident angle changes from normal to oblique incidence, the defect modes with heterostructures
will shift into higher frequencies. It leads to the fact that light of
unwanted frequencies cannot be cut off at some incident angles,
which will restrict the applications in some outdoors detections.
Thus, lters with the ability of large omni-directional ltering band
(i.e., omni-directional reection band except the frequency of the
defect mode) [11,12] are in urgent need. Recently, most of the 1D
PC lters with multiple heterostructures reported are focused on
the microwave and infrared regions [13,14]. There are few reports
about 1D PC lters through which both TE and TM modes can propagate at oblique incidence [15]. Because, a PC lters at UVvis
regions have more important applications. It is necessary to do
further work for investigation of large omni-directional ltering
band in ultraviolet and visible light region. Considering the above
issue, in this paper, we will try to apply the transfer matrix method
in optimizing the structure of the multiple heterostructures with
defects and nally obtain an efcient PC lter with enlarged nontransmission range. Efforts are focused on optimization design for
omni-directional lters in near ultraviolet region. These would
identify the potential applications in the future optical devices at
visible and near ultraviolet range.
2. Structural model and computational method
The heterostructure containing defect is schematically shown
in Fig. 1, where (AB) and (EF) are different PCs with different lling

H. Guan et al. / Optik 123 (2012) 18741878

1875

Fig. 1. Schematic of the calculated heterostructures containing defect. (AB) and (EF) are two different 1D PCs with different lled factor. (CD) is a defective PC. n1 , n2 are the
refractive indices of TiO2 and SiO2 .

factors (CD) is the defective PCs introduced in the heterostructures.

In the calculation, TiO2 and SiO2 are chosen as high and low refractive index media. The refractive indices of TiO2 and SiO2 are n1
and n2 shown in Fig. 1, which obtain from Refs. [1619]. The heterostructure can be expressed as (EF)s (AB)m (CD)1 (AB)m . A, C and
E all represent TiO2 , B, D and F represent SiO2 , where m is the
periodic layers of the potential barrier (AB), and s is the periodic
layer of (EF). The thickness of repeat cycle is represented as a,
a = 82 nm, whereas dA (0.2a), dB (0.8a), dC (0.64a), dD (0.36a), dE
(0.6a) and dF (0.9a) represent the thicknesses of A, B, C, D, E and F,
respectively.
The transfer matrix method (TMM) [20] was applied to study
the transmittance characteristics and the defect modes of the
heterostructures containing defect. According to the Maxwells
boundary condition, the tangential components of electric and
magnetic elds must be continuous at the interface between arbitrary two arbitrary layers. A characteristic matrix for k-th layer is
obtained [21,22]. Where there are two modes: transverse magnetic (TM) and electric magnetic (TE). For the TE (TM) mode, the
electric (magnetic) eld is perpendicular to the xy plane dened
by the wave vector together with the periodic direction. Finally,
the total reectivity and transmissivity for heterostructure is
obtained.
In a 1D PC, the propagation of an optical pulse is governed by
the wave equation:
2
1 2
1 2
E(z, t) 2 2 E(z, t) =
P(z, t),
2
z
c t
0 c 2 t 2

(1)

where E(z, t) is the electric eld and P(z, t) is the electric polarization.
Suppose that the pulse can be expressed as an integral of its Fourier
components:

E(z, t) =

E(z, )eit d,

(2)

and the Fourier component of the polarization P(z, ) = (z, )E(z,

) under linear response approximation. The equation for the
Fourier component of electric eld can be written as
d2
2
E(z, ) + 2 (z, )E(z, ) = 0,
2
dz
c

(3)

where (z, ) = 1 + (z, ) is the dielectric function.

Our method is that we rstly solve Eq. (3) layer by layer, and
then integrate E(z, ) by using Eq. (2) to obtain the temporal-spatial
behavior of the pulse. The integral is a coherent superposition of all
Fourier components including the forward waves and backward
waves with complicated relations of phases.
We consider normal propagation in z direction (layers in xy
plane). The electric eld is polarized along x direction. In the jth

layer the electric eld Ej (z, ) satises

d2
2
Ej (z, ) + 2 n2j ()Ej (z, ) = 0, (zj1 < z < zj , j = 1, 2, ..., N),
dz 2
c
(4)

where nj () =
j () is the refractive index that is a constant in
the same layer for a given . The general solution of Eq. (4) can be
expressed as

Ej (z, ) = E+j () exp i

nj ()(z zj1 )

+Ej () exp i

nj ()(z zj1 ) ,

(5)

From E = (/t)B = iB we can get the magnetic eld

Bj (z, ) =

nj ()
c

E+j () exp i

Ej () exp i

nj ()(z zj1 )



nj ()(z zj1 )

(6)

which is polarized along y axis. Dene

1j (z, )

= Ej (z, ),

(7)

2j (z, )

= icBj (z, ),

(8)

such that the electric component 1 (z, ) and the magnetic

component 2 (z, ) can be measured by the same unit. The electromagnetic eld then can be expressed by a two component wave
function vector,

j (z, ) =

1j (z, )

(9)

2j (z, )

From Eqs. (5) and (6) we can obtain the transfer matrix relating
 j (z + z, ) to  j (z, ),
j (z + z, ) = Mj (z, )j (z, ),
Where

Mj (z, ) =

cos


c

(10)

nj ()z

nj () sin


c


nj ()z

n ()z
sin
c j
nj ()
cos


c

nj ()z
(11)

Because 1 (z, ) and 2 (z, ) are proportional to the tangential

components of the electric eld and the magnetic eld, respectively, they are continuous function of z across the layer interfaces.

1876

H. Guan et al. / Optik 123 (2012) 18741878

At any position z,  (z, ) connects with  (z0 , ) through a propagation matrix. For example, in the jth layer (zj1 < z < zj ), the eld at
z = zj1 + z is
 (zj1 + z, ) = Q (zj1 + z, ) (z0 , ),

(12)

t() =

2
[x22 () + nS x11 ()] i [nS x12 () x21 ()]

j1


Q (zj1 + z, ) = Mj (z, )

Mi (di , )

(13)

i=1

From Eqs. (12) and (13) we can calculate the electric eld
and the magnetic led at any position provided that  (z0 , ) =

T

is known.  (z0 , ) can be determined by

1 (z0 , ), 2 (z0 , )
matching the boundary condition. Assume the light is incident from
the region of z < 0. In this region the eld is a superposition of forward eld and backward eld,

E(z, ) = Ei (z, )eikz + Er (z, )eikz ,

(14)

2

R = r() ,

 (0, ) =

Ei (0, ) + Er (0, )

 (0, ) = Ei (0, )

Thus,

 (zN , ) =

(16)

Et (zN , )

XN () =

Mj (dj , ) =

j=1

(18)

x11 ()

x12 ()

x21 ()

x22 ()

(19)

Eq. (18) may be rewritten in a form of

 (0, ) = XN1 ()  (zN , )

(20)

Because detMj (dj ) = 1, we have det XN () = 1 and

XN1 ()

x22 ()

x12 ()

x21 ()

x11 ()

(21)

Substituting Eqs. (15), (17) and (21) into Eq. (20) yields
Er (0, ) = r () Ei (0, ) ,

(22)

Et (zN , ) = t()Ei (0, ),

(23)

where r() is the reection coefcient of a monochromatic plane

wave of frequency that can be expressed in terms of the elements
of the matrix XN (),
r() =

(27)

i[1 r()]

(z, ) e

it

d =

Ei (0, ) [1 + r ()] Q11 (z, )

+i [1 r ()] Q12 (z, ) eit d

and
2

(z, t) =


2

(z, ) eit d =

(28)

Ei (0, ) [1 + r ()] Q21 (z, )

+i [1 r ()] Q22 (z, ) eit d,

(29)

where Qij (z, ) are the elements of the propagation matrix (13). The
electric displacement D (z, t) can be obtained through
3 (z, t) = 0

()

1 (z, )e

it

d,

(30)

(17)

 (zN , ) = XN ()  (0, ) ,

N


D(z, t) = 0

where nS is the refractive index of the substrate. Suppose that the

matrix connecting the incident end and the exit end is XN (), we
have

where

1 + r()

inS Et (zN , )

(z, t) =

(15)

Generally, the forward (incident) eld Ei (0, ) is given, while the

backward (reection) eld Er (0, ) is to be solved. In order to solve
Er (0, ), another boundary condition at the exit end z = zN should be
utilized. In the region of z > zN , there is only forward (transmitted)
eld,
E(z) = Et (z, )e

(26)

With  (0, ) in hand, we are able to calculate the temporalspatial behavior of the pulse. By multiplying a time factor, eit to
each side of Eq. (12) and integrating all frequency components, we
have
1

ik(zzN )

2

i [Ei (0, ) Er (0, )]

T = t()

Thus, we can express the electromagnetic eld at z = 0 with the

incident eld Ei () as follows:

where k = /c. At the incident end we have

(25)

In terms of r() and t(), the reectivity and transmissivity can

be obtained by [12]

where the propagation matrix

and t() is the transmission coefcient of the monochromatic plane

wave that can be written as

[x22 () nS x11 ()] i [nS x12 () + x21 ()]

,
[x22 () + nS x11 ()] i [nS x12 () x21 ()]

(24)

where 0 is the vacuum permittivity. The unit of 3 (z, t) is the

same as 1 (z, t) and 2 (z, t). Obviously, the eld functions given
by Eqs. (28)(30) are the coherent superposition of all frequency
components including forward waves and backward waves. The
waves enter the integral have complicated relations of phases.
The calculated transmission spectrum shown in Fig. 2 is for
the heterostructure inserted with defective PC. The position and
number of the defect modes are affected when the periodic layers
of the potential barrier (AB) is greater than that of the potential
trap (CD) by adjusting the repeat layers m of the potential barrier
(AB). Fig. 2 illustrates the transmittance spectra of (AB)m (CD)1 (AB)m
(m = 25) heterostructures, which the repeat cycle count s of the
potential well-width (CD) remain a constant with one, and the
repeat cycle count m of potential barrier are from 2 to 5, respectively. The full width at half maximum (FWHM) of the defect modes
gradually narrow with the increasing number m, but the transmittance of defect mode decreases gradually. When m reaches
5, the transmittance of defect mode become small, which is only
37.93%. To obtain defect mode with high transmittance in UV
region, there should be a proper ratio in the number of repeated
cycle counts m of potential barrier (AB). Generally, the ideal
condition is obtained when m is equal to 3 in (AB)3 (CD)1 (AB)3
heterostructure (to see Fig. 2(b)). In Fig. 2(b), we have gained the
defect mode with high transmittance and the FWHM (0.48 nm)
is small in UV region. However, the non-transmission range
(260.0482.9 nm) is narrow, which could not over the whole
visible and near ultraviolet region. Fig. 3(a)(c) show the transmittance spectra of (AB)3 (CD)1 (AB)3 (EF)2 , (EF)2 (AB)3 (CD)1 (AB)3 and
(EF)2 (AB)3 (CD)1 (AB)3 (EF)2 different heterostructures. In Fig. 3(a)
and (c), the non-transmission ranges for these heterostructures of (AB)3 (CD)1 (AB)3 (EF)2 and (EF)2 (AB)3 (CD)1 (AB)3 (EF)2 could

H. Guan et al. / Optik 123 (2012) 18741878

1.0

(a)

1.0

m=2

1877

(a)

s=2,m=3

0.5

0.5

m=3

0.0

0.5
0.0
1.0

(c)

m=4

0.5
0.0
1.0

1.0

(b)
[]

0.5

1.0

m=5

0.50

0.45

0.0

(d)

0.55

Transmitivity

(b)

Transmitivity

Transmitivity

0.0
1.0

s=4,m=3
0.47 nm

364.4
364.8
365.2
Wavelength (nm)

(c)

s=6,m=3

0.5

0.5

0.0

0.0
300

400

500

600

700

800

Wavelength (nm)

300 400 500 600 700 800 900 1000

Wavelength (nm)

Fig. 2. The relationship between the transmittance characteristic of defect mode

and the potential barrier (AB) repeat layers m of (AB)m (CD)1 (AB)m (m = 25) heterostructures.

Fig. 4. The relationship between the defect modes and the number s of (EF)s (AB)3
(CD)1 (AB)3 (s = 2, 4, 6) heterostructures.

not over the whole visible and near ultraviolet region. But,
(EF)2 (AB)3 (CD)1 (AB)3 heterostructure has a non-transmission
ranges of 260900 nm, which over the whole visible and near ultraviolet region [Fig. 3(b)]. It is obvious that the non-transmission
range can be substantially enlarged as desired by choosing proper
heterostructures. There is a PC lter wavelength corresponding to
the peak at 364.7 nm appeared in the non-transmission ranges.

Since our model is unknown prior to optimization, the searching

areas of the heterostructures thickness and number of periods have
to be determined. In this section, we will analyze the optimized
structural parameters of multiple heterostructures. That a perfect
non-transmission range over the whole visible and near ultraviolet
region, which has an ultra-narrow band PC lter in near ultraviolet
region, is the destination. Fig. 4 shows the trasmission spectra of the
PC lter of the herterostructures (EF)s (AB)3 (CD)1 (AB)3 , where s = 2,
s = 4 and s = 6, respectively. We can see from Fig. 4(a), (b) and (c)
that the transmission channels appear in the stop gap formed by
the heterostructures. The transmittances of the lter are 99.38%,
97.36% and 97.98%, respectively. The FWHM is ultra-narrow, less
than 0.48 nm. From the theoretical result, the non-transmission
wavelength range can be enlarged from 260 to 900 nm. Thus, closer
analysis shows that (EF)4 (AB)3 (CD)1 (AB)3 heterostructure exhibits
the ideal result, in which the transmittance of the PC lter is 97.89%,
in which the FWHM is 0.47 nm [Fig. 4(b)].
It is known that the optical properties of conventional lters are relevant to incidence angle and polarization of the
incident light, even those based on the defect modes in omnidirectional gaps [15,23]. Based on aforementioned optimal design,
Fig. 5(a) shows the transmission and absorption spectrum of
(EF)4 (AB)3 (CD)1 (AB)3 heterostructures in incidence angles 0 for
the TM and TE modes. Fig. 5(b), (c) and (d) are shown the transmission properties of (EF)4 (AB)3 (CD)1 (AB)3 heterostructures, and
are respectively corresponding to the incident angles from 0 to
90 with an interval of 30 . The solid and dot curves correspond
to TE and TM modes, respectively. And the absorption spectrum
of the (EF)4 (AB)3 (CD)1 (AB)3 PC in short wavelength (260400 nm)
obtained have been shown in the small gure in Fig. 5. We can
see that the lters for the TE mode has no angular effect when the
incident angle is less than 90 , a perfect omni-directional and high
peak transmission lters for TE mode can be formed. The lter for
the TM mode has no angular effect when the incident angle is less
than 40 . With the increase of the incident angles from 0 to 90 , the
location of the lters move to a shorter band called blue shift, and

1.0

(a)

(AB)3(CD)1(AB)3(EF)2

0.5

0.0

Transmitivity

1.0

(b)

(EF)2(AB)3(CD)1(AB)3

0.5

0.0
1.0

(c)

(EF)2(AB)3(CD)1(AB)3(EF)2

0.5

0.0
300 400 500 600 700 800 900 1000

Wavelength (nm)
Fig. 3. The relationship between the location of the (EF)2 (right and left) with the
transmittance characteristic of the defect mode.

H. Guan et al. / Optik 123 (2012) 18741878

1.0

(a)

0.5

Absorbtivity

1878

0.6

0 Degree

0.4
0.2
0.0
270

300

Transmitivity

330

360

W avelength (nm)

0.0
1.0

(b)

390

30 Degree
TM
TE

0.5
0.0
1.0

(c)

60 Degree

(d)

90 Degree

0.5
0.0
1.0
0.5
0.0
300

and the Taiyuan Science and Technology Project (Grant No.

100115105).

400

500

600

700

800

900 1000

Wavelength (nm)
Fig. 5. Transmission spectra of (EF)4 (AB)3 (CD)1 (AB)3 heterostructure containing
defect at different angles. From (a) to (d) are corresponding to the incident angles
from 0 to 90 , respectively, with an interval 30 . The solid and dot curves represent
TE and TM modes, respectively.

the variation in the TM mode is more signicant than that in the TE

mode (Fig. 5). The structure is suitable for ultra-narrow band PC lter at visible and near ultraviolet range, the band width of 0.47 nm
is quite a narrow one.
3. Conclusion
In this paper, an ultra-narrow band PC lter with wide
non-transmission range and high transmissivity was obtained
by using the PC heterostructures in UVvis region. When the
(EF)4 (AB)3 (CD)1 (AB)3 heterostructures have the optimized structure parameters, a = 82 nm, s = 4 and m = 3, the PC lter with high
transmission of 97.89% located in the UV region (364.7 nm), which
the FWHM is 0.47 nm. The new PC heterostructure provides a perfect omni-directional and high peak transmission lters for TE
mode. This structure opens a promising way to fabricate ultranarrow band PC lters with wide non-transmission range in near
ultraviolet and visible band.
Acknowledgements
This research was supported by the National Natural Science Foundation of China (Grant No. 50874079, 51002102),

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