Professional Documents
Culture Documents
Low-frequency CMOS
Analog Design
May 16, 2002
Rafael J. Betancourt-Zamora
http://www.betasoft.org/
1 of 30
Outline
Goals
Noise Overview
Examples
Summary
2 of 30
Goals
3 of 30
Outline
Goals
Noise Overview
Examples
Summary
4 of 30
What is noise?
Unwanted disturbance that interferes with a desired signal
External: power supply & substrate coupling, crosstalk, EMI, etc.
Internal: random fluctuations that result from the physics of the devices or materials
Smallest detectable signal, signal-to-noise ratio (SNR), and dynamic range are
determined by noise
2
P signal
Vrms, signal
SNR = -------------------- = ------------------------2
P noise
Vrms, noise
5 of 30
t
MEAN
m = 0
STANDARD DEVIATION
= V rms
V rms Hz
VARIANCE
= V rms
6 of 30
Types of Noise
THERMAL
V rms Hz
2
V rms
---------- =
f
4kTR , V2/Hz
SHOT
A rms Hz
2
I rms
----------- =
f
2qI DC , A2/Hz
FLICKER
2
V rms Hz
traps in semiconductors
1f
f
2002, Rafael J. Betancourt-Zamora http://www.betasoft.org/
2
V rms
------------- =
f
2
K f V DC 2
, V /Hz
-------------------f
T = Temperature, K
k = 1.38 x 10-23 J/K
q = 1.6 x 10-19 C
Kf = Flicker coefficient
7 of 30
Outline
Goals
Noise Overview
Examples
Summary
8 of 30
Vn
NOISE DENSITY
NOISE POWER
fn
2
Vn
In
Vn
------ =
f
, V /Hz
In
------- =
f
= 4kTRfn , V2
In =
4kTR
= NOISE BANDWIDTH
2
4kT
---------------- , A /Hz
R
4kT
2
---------------- fn, A
R
1k @ 25 C
4.05
nV H z
4.05
pA H z
9 of 30
Noise Bandwidth
A v (f )
No. Poles
1
f n =
--- f 3dB
2
f n =
1.22 f 3dB
f n =
1.16 f 3dB
2nd-order BPF
f n =
--- f 3dB
2
2
A vo
f3dB
fn
2
Avo
f n =
NOISE BW
A v(f) df
10 of 30
kT/C Limit
Vo
Vn
4kTRfn , V2
1
4kTR ----------
Vo =
*
fn =
f 3dB =
Vo =
-- f 3dB
2
1
--------------2 RC
f n =
1
----------4R C
4RC
Vo =
kT
------ , V2
C
11 of 30
PARALLEL
2
I n 1 R2
R1
2
V n1
2
R1
I n2
Vn 1 + Vn 2
2
R1+R2
R1||R2
In1 + In 2
V n2
R2
Vo =
4kT ( R1 + R2 )fn
I 2o
4kT ( ---1----
+ ---1---- )fn
R1 R2
2
Vo
2
V n1
c 1
2002, Rafael J. Betancourt-Zamora http://www.betasoft.org/
2
V n2
+ 2cV n1 V n2
CORRELATION COEFFICIENT
12 of 30
2
2
K f VD C 2
Vnf
------- = --------------------- , V /Hz
f
f
1f
V n Hz
THERMAL
fL
fH
fc
fH K V2
f H
DC
2
f
--------------------- df = K f V DC ln ----- , V2
fL
f
fL
2
Vnf =
2
Vn f =
2.3 K f V 2DC
FOR fH/fL = 10
Vo =
f H
4kTRfn + K f V 2DC ln -----
fL
, V2
ASSUMES
fn f c
13 of 30
Noise Index
2
Vn f
------------2
V DC
=
DEC
K f V D C ln ( 10 )
----------------------------------------------------2
VD C
2.3Kf 10
2.3 K f
, V/V/decade
NI
2
V nf
NI V DC 1 2
= ---------------------------- -- , V /Hz
12 f
2.3 10
fc
NI VDC
, Hz
= ------------------------------------------------- 12
2.3 10
4kTR
20log(NI)
poly -15dB
ndiff -10dB
-5dB
pdiff
[Motchenbacher93]
14 of 30
Outline
Goals
Noise Overview
Examples
Summary
15 of 30
In d
------- =
f
4kTg m , A2/Hz
Vn g
I nd
* *
V ng
-------- = 4kTRG 3 , V2/Hz
f
can be neglected with good layout
FLICKER NOISE
2
Kf
Vnf
2
------- = ------------------- , V /Hz
f
WLC o xf
Vn f
FOR NMOS
24 2
K f = 1.2 10
V F
[Razavi01]
Rds = 1/gm
Long Channel
Saturation
SPICE
AF
2
K
I
In f
f DC , A2/Hz
------ = ----------------------2
f
L EFF C o x f
16 of 30
Input-referred Noise
2
Vn f
2
I nd
Vn i
Vn i
I ni
2
In d
Vn d
-------- = ------f
f
gm
4kT
--------------------gm
, V 2/Hz
Vni
------- =
f
Kf
4kT
2
--------------------- + ------------------- , V /Hz
g m WLCox f
17 of 30
V n Hz
1f
THERMAL
f
fc
4kT
--------------------gm
Kf
---------------------WLCox fc
Kf g m
f c = --------------------------------------4kTWLCox
Defines where flicker noise is equal to thermal noise.
Need to increase transistor area to reduce flicker noise.
2002, Rafael J. Betancourt-Zamora http://www.betasoft.org/
18 of 30
Outline
Goals
Noise Overview
Examples
Summary
19 of 30
Current Source
VDD
2
I n1
------- =
f
I1
2
VBIAS
Vo
M1
I n1
Vo
-------f
In 1 2
------- ro , V2/Hz
f
4kTg mr o , V2/Hz
Vo
-------f
4kTg m , A2/Hz
20 of 30
Common Source
VDD
I n1
------- =
f
I nL
RL
2
Vo
2
Vn f
Vi
M1
InL
--------- =
f
4kTg m , A2/Hz
2
4kT
---------------- , A /Hz
RL
2
Kf
Vnf
------- = ------------------- , V2/Hz
f
WLC o xf
I n1
Vn i
------- =
f
Kf
4kT
4kT
--------------------- + ------------------- + ---------------------g m WLC o xf g 2 R
, V2/Hz
m L
21 of 30
Source Follower
2
Vn 1
Vi
VDD
2
V n1
-------- =
f
M1
*
2
Vo
VBIAS
M2
Kf
4kT
2
--------------------- + ------------------- , V /Hz
g m1 WLCox f
I n2
------- =
f
4kTg m , A2/Hz
I n2
2
I n2 1
2
2 2
------- --------------- || r o1 || ro2
2
2
Vni
V n1 f g m1
------- = -------- + --------------------------------------------------------------------------- , V2/Hz
f
2
f
Av
WHERE
Av 1
22 of 30
Common Gate
VDD
InL
--------- =
f
I nL
RL
2
Vo
VBIAS
M1
Vn f
/Hz
2
Kf
Vnf
------- = ------------------- , V2/Hz
f
WLC o xf
I n1
------- =
f
4kTg m
, A2/Hz
I n1
V ni
------- =
f
Kf
4kT
4kT
2
--------------------- + ---------------------- + ------------------- , V /Hz
g m g 2 R WLCox f
m L
2
2
g
Kf
Ini
2
4kT
m
------- = ---------------- + ------------------- , A /Hz
f
RL WLCo x f
Vi
Rs = 1/gm
(neglecting
body effect)
4kT
---------------- , A
RL
23 of 30
Cascode
VDD
2
I nL
RL
Vo
VBIAS
M2
Kf
4kT
2
--------------------- + ------------------- , V /Hz
g m1 WLCox f
2
4kT
---------------- , A /Hz
RL
V n1
-------- =
f
InL
--------- =
f
I n2
2
V ni
------- =
f
2
Vn 1
Vi
Kf
4kT
4kT 2
--------------------- + ------------------- + -------------------------- , V /Hz
g m1 WLCox f g 2 R
m1 L
M1
*
Neglected output conductance of M1
M2s noise contribution is negligible at low frequencies
Capacitance at M1s drain increase noise at high frequencies
24 of 30
Outline
Goals
Noise Overview
Examples
Summary
25 of 30
Variable Resistor
Vi
kRT
In1
Vo
(1-k)RT
In 2
Vo
kRT
(1-k)RT
2
In
WORST CASE
k = 0.5
Req = RT/4
2
4kT
---------------- , A /Hz
Req
16kT
2
--------------------- , A /Hz
RT
In
------=
f
In
------- =
f
Req = k(1-k)RT
26 of 30
R1
R2
1. SHORT Vna
2
------- =
f
Avi = R2
------Avni = 1 + R2
------R1
R1
1
1
f n =
-- ----------------= ------------2 2R2 C
4R2 C
Vo
3. APPLY SUPERPOSITION
2
Vn i
V n2
2
------- = V n 1 + -------2
f
Avi
2. SHORT Vi
A2
2 vni
V na -----------
2
Avi
where
V na
2
Vn i
*
-
2
Vn 2
Vi
Vni
2
Vn 2
2
2
------- = V n 1 + -------+ V na 1 + R1
-------
R2
2
f
A vi
FOR LARGE GAIN, R2 >> R1
2
= V na 1 + R1
-------
R2
Vni
Vn 2
2
2
------- = V n 1 + -------- + V na , V2/Hz
2
f
A vi
27 of 30
Outline
Goals
Noise Overview
Examples
Summary
28 of 30
What We Learned
NOISE IN GENERAL
Thermal noise and flicker noise are the major sources of headaches
for low-noise, low frequency instrumentation design in CMOS.
Noise bandwidth is not the same as 3dB bandwidth.
Capacitors are noiseless, but they can accumulate noise.
Resistors can have flicker noise, but only when there is current flow.
NOISE IN MOSFETS
Need to increase transistor area to reduce flicker noise.
Current source: Minimize gm for low noise current
Common source: Maximize g m , RL, and transistor area for low noise
Source follower: VERY NOISY, AVOID
Common gate: Transfers load current noise to the input. Input noise
29 of 30
References
30 of 30