MOS FET Array STA509A

ID VDS Characteristics

ID = 1A
VDD 12V
RL = 12
VGS = 5V
RG1 = 50, RG2 = 10
ISD = 6A, VGS = 0V

1.5

0.25

0.5

(2.54)

0.15

0
92.54=22.86

C1.5

0.3

0.3

0.05

0.5

1 2 3 4 5 6 7 8 9 10
S G D G D G D G D S

a) Type No.
b) Lot No.
(Unit: mm)

0.8

20

VGS = 4V

0.2

1.0

R DS (on) I D Characteristics

ID VGS Characteristics

b
a

VGS = 4V

VDS = 10V

10

Ta = 150C

VGS = 5V
VGS = 10V

0.6

RDS (on) ()

ID (A)

3
2

0.1

VGS = 3V

10

12

0.01

14

0.2

I DR VSD Characteristics
10

10
ID = 1A

VDS = 10V

Re (yfs) (S)

VGS = 4V
typ.

0.4

0.3
VGS = 10V
typ.

0.2

Ta = 55C
25C
150C

0.5

0.1

0.2
0.05 0.1

0
50

100

150

0.5

Ta = 150C
75C
25C
55C

0.2

0.4

0.6

ID (A)

Tc (C)

(Tc = 25C)

10

(o

IT

1.4

Equivalent Circuit Diagram

ED

ID (A)

IM

1.2

10

RD

L
n)

1.0

10
0
s
1m
s

ID (pulse) max

0.8

VSD (V)

Safe Operating Area (single pulse)

1
2

0.5

0.1
0.5

10

VDS (V)

80

ID (A)

Re (yfs) I D Characteristics

0.5

VGS (V)

R DS (on) TC Characteristics

RDS (on) ()

25C

0.4

0
0

VDS (V)

50

75C

55C

Ta = 55C
25C
75C
150C

IDR (A)

ID (A)

0.2

0.25
0.3

0.2

0.2

0.2
0.25
200
120
20
2.0
7.4
3.3
4.2
1.0

V
A
A
V
S

pF
pF
pF
s
s
s
s
V

4.0

1.0
1.0

VDS = 10V
f = 1.0MHz
VGS = 0V

25.25

57
1.0
100
2.5

0.15

Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD

52

1.2

RDS (ON)

47

9.0

ID = 1mA, VGS = 0V
VGS = 20V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 250A
VDS = 10V, ID = 1.0A
VGS = 10V, ID = 1.0A
VGS = 4V, ID = 1.0A

Unit

max

0.2

V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)

min

0.2

Test Conditions

External Dimensions STA

0.5

4 (Ta = 25C)
20 (Tc = 25C)
EAS *2
40
mJ
Tch
C
150
Tstg
C
55 to +150
*1 PW 100s, duty 1%
*2 VDD = 12V, L = 10mH, unclamped, RG = 10
PT

Symbol

(Ta=25C)
Ratings
typ

2.3

Electrical Characteristics

Unit
V
V
A
A
W
W

11.3

Ratings
525
20
3
6

0.5

Symbol
VDSS
VGSS
ID
ID (pulse) *1

3.5

Absolute Maximum Ratings (Ta=25C)

50

10