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CMOS Operational Amplifiers: Analog Design For CMOS VLSI Systems
CMOS Operational Amplifiers: Analog Design For CMOS VLSI Systems
Basic op-amp
The ideal operational amplifier is a voltage controlled
voltage source with infinite gain, infinite input impedance
and zero output impedance.
Z4 Z1 + Z2
Z2
V0 = V2
V1
Z3 + Z4 Z1
Z1
Z4 Z1 + Z2
Z2 Z1 + Z2
V0 = V2
V1 1+
Z1
A0Z1
Z3 + Z4 Z1
The error due to the finite gain is proportional to 1 / A0. This
error must be smaller than the error due to impedance
mismatch.
Analog Design for CMOS VLSI Systems
Franco Maloberti
OTA
If impedances are implemented with capacitors and
switches, after a transient, the load of the op-amp is made
of pure capacitors. The behavior of the circuit does not
depend on the output resistance of the op-amp and stages
with high output resistance (operational transconductance
amplifiers) can be used.
Transient
C1
Vi (0 ) = Vin
C1 + C // C0
+
C
Vo (0 ) = Vi (0 )
C0 + C
+
C1 + C
Vi () = Vin
C1 + C(1+ gm r0 )
Performance characteristics
Actual op-amps deviate from the ideal behavior. The
differences are described by the performance
characteristics.
DC differential gain:
It is the open-loop voltage gain measured at DC with a
small differential input signal. Typically Ad = 80 100 dB.
Typically:
PSRR = 90 dB (DC)
PSRR = 60 dB (1 kHz)
PSRR = 30 dB (100 kHz)
Phase margin:
It is the phase shift of the small-signal differential gain
measured at the unity gain frequency. A phase margin
smaller than 60 causes ringing in the output response.
Analog Design for CMOS VLSI Systems
Franco Maloberti
Slew rate:
It is the maximum slope of the output voltage. Usually it is
measured in the buffer configuration. The positive slew rate
can be different from the negative slew rate. Typically SR =
50 200 V/s (lower values for micropower operation).
Settling time:
The settling time is the time required to settle the output
within a given range (usually 0.1%) of the final value.
Power dissipation:
It depends on speed and bandwidth requirements.
Typically, for 3.3 V supply, it is around 1 mW.
Analog Design for CMOS VLSI Systems
Franco Maloberti
Value
80
40
4-6
100
3
300
90
60
30
100
1
3.3
1.5
2.2
1
2000
Unit
dB
dB
mV
MHz
V/s
ns
dB
dB
dB
nV/Hz
kHz
V
V
Vpp
mW
m2
5. CMOS Operational Amplifiers
12
Basic architecture
Two-stage op-amp
gm1
gm5
Av = A1A2 =
=
(gds2 + gds 4 ) (gds5 + gds6 )
2 2n p Cox
( n + p )2
W W W
L 1 L 5 L B 1
IBias
W W
L 6 L 7
ACM = ACM1ACM2
g g
ds7
m5
=
2gm1 gds5 + gds6
Av
2gm1gm3
CMRR =
=
ACM gds7 (gds2 + gds 4 )
Analog Design for CMOS VLSI Systems
Franco Maloberti
Offset:
The offset is composed of two terms:
systematic offset
random offset
The systematic offset can be reduced to zero with a
careful design. A necessary condition to have zero
systematic offset, is that the currents of M5 and M6 are
equal, when the inputs are connected to the same voltage.
Assuming all the transistors in saturation this condition is:
W L)
W L) (W L)
(
(
=I
I
(W L)
(W L) (W L)
1
(W L) (W L) = 2 (W L) (W L)
6
Bias
Bias
I
I
Vos1
Vos1
Bias
Bias
gm1
+ gm2
1+ =
2
2
2
2
Vos1
I1
gm1
MOS:
VGS1 VTh
I1
=
= 150 300 mV
gm1
2
(in saturation)
I1
nkT
= nVT =
q
gm1
(in sub-threshold)
BJT:
I1
26 mV
gm1
Assuming = 0.01:
Vos,BJT = 0.26 mV
Vos,MOS = 1.5 3 mV
Analog Design for CMOS VLSI Systems
Franco Maloberti
) (
a) low+ frequency:
W /L
W
/
L
W
/
L
1
1
6
5
7
vo,n,1 = in,tot
2 W / L W / L gds6 + gds7
W / L
B
4
B
(
(
)
)
(
(
)(
)(
)
)
b) high frequency:
vo,n,1 = in,Ref
(W / L)
(W / L)
1
gm5
(v )
o,tot
gm5 (1 k+ )
gds6
2gm3 rds3 +
vn
=
gds5 + gds6
( )
gm5k
gds6
2
2gm3 rds3
vn
+
gds5 + gds6
( )
The circuit has two poles and a zero in the right half plane.
1
p1
R1R2gm2Cc
gm2Cc
p2
C1C2 + (C1 + C2 )Cc
gm2
z=
Cc
since in practice Cc > C1, Cc C2, gm1 > 1/R1, gm2 > 1/R2 it
results:
1
p1 <<
R1C1
gm2
1
p2
>>
R2C2
C2
p2
gm2Cc
=
T
gm1C2
z
gm2
=
T
gm1
Disadvantages:
Area
Power dissipation
Actually it creates a doublet in the feedback path.
Potentially not stable.
Alternative, a substrate emitter follower may be used.
(The bipolar transistor is smaller and has higher gm.)
Analog Design for CMOS VLSI Systems
Franco Maloberti
1+ s Rz 1/ gm2 Cc
v0
A0
vin
s
s
1+ 1+
p1 p2
Analog Design for CMOS VLSI Systems
Franco Maloberti
1
z=
1/ gm2 Rz Cc
1
1
1
=
+
Rz Rn Rp
W
1
= kn VDD V1 VTh,n
Rn
L n
W
1
= kp V1 VSS VTh,p
Rp
L p
W
W
kn = kp
L n
L p
and:
W
1
= kn VDD Vss VTh,n VTh,p
Rz
L n
Problem: Supply sensitivity.
Since the swing of the node 1 is A2 less than the output
swing, only one transistor with supply independent bias can
be used.
Slew rate
IM7
SR =
T = VGS1 VTh T
gm1
For T = 2 40 106 rad/s, (VGS1 - VTh) = 300 mV, SR
75.4 V/s.
Telescopic cascode
DC gain A0 (gmrds)2
low power consumption
only one high impedance
node: compensated with a
capacitance load (if
necessary)
low output swing
reference of the input close
to the negative supply
two bias lines (VB1, VB2)
5 transistors in series
Mirrored cascode
optimum input common
mode range
only 4 transistors in series
improved output swing
speed of the mirror
higher power consumption
Voutmax = VB1max + VGS4 - Vsat
VB1max = VDD - Vsat - VGS4
Voutmax = VDD - 2Vsat
Voutmax = VGS7 + Vsat
Analog Design for CMOS VLSI Systems
Franco Maloberti
Single stage:
No need for additional compensation capacitor
Lower power consumption
Better CMRR
Lower signal swing
More bussing of bias lines
Class AB op-amps
Class AB: a circuit which can have an output current which
is larger than its DC quiescent current.
Two stages amplifier with class AB second stage
M6 and M7 act as a
level shifter
M8 and M9 act as a
class AB push-pull
amplifier
gm8 + gm9
A2 =
gds8 + gds9
2L
2L
2L
+
I6 +
I8 +
I9
kn W 6
kn W 8
kn W 9
2L
I6
kn W 6
2L
2L
+
kn W 9
kn W 8
2 W
2 W
I2
+
+
kn L
L
k
p
2
4
2 W
2 W
+
+
I1
kn L
L
k
p
3
1
It results:
Iout = K8,9 (I1 - I2) = K8,9 VB Vin
Until I1 or I2 goes to zero, for a
larger Vin, Iout increases
quadratically with Vin.
Small signal gain:
Av = 2 Gm rout
Analog Design for CMOS VLSI Systems
Franco Maloberti
gm2Vin
VA =
gm2 + gm4
Iout
gm2gm4
= gm4VA =
Vin = GmVin
gm2 + gm4
Problems:
dynamic range
linearity
Compensation of the non-linearities of the n-channel and pchannel CMFB cell.
Micro-power op-amps
Required in battery operated systems
(portable/wearable equipment: pocket calculators, PDA's, digital
cameras, ; medical equipment: pace makers, hearing aids, );
ID
gm =
nVT
gds = ID
B gm1
B
=
Av =
gds6 + gds8 nVT n + p
Basic idea:
Generate |I1 - I2| and increase the current in the differential
stage by k|I1 - I2|.
Analog Design for CMOS VLSI Systems
Franco Maloberti
Since
ID
gm =
nVT
i1 i2 = gm (vin + vin )
i1 i2 = IB + k i1 i2
ID = IB + k i1 i2
vin + vin
nVT
The current increase becomes significant when:
vin + vin
k
>1
nVT
Typical performance:
DC gain
95 dB
ft
130 kHz
SR
0.1 V/s
0.5 A
IB
Itot
2.5 A
Analog Design for CMOS VLSI Systems
Franco Maloberti
Noise
The noise of an operational amplifier is described with an
input referred voltage source vn.
The spectrum of vn is made of a white term and 1/f term.
vn is due to the contributions, referred to the input, of the
noise generators associated to all the transistors of the
circuit (assumed uncorrelated).
2
1
2
2
2
2
2
2
= gm1(vn1 + vn2 ) + gm3 (vn3 + vn 4 )
gds2 + gds 4
2
= vn,in
=
2
vn,out
2
m1
(g
ds2
+ gds 4
2
g
2
m3 2
= 2vn1 + 2 vn3
gm1
W
gm = 2Cox
I
L
Analog Design for CMOS VLSI Systems
Franco Maloberti
8kT
1 1
KF
v =
+
f
3gm 2Cox WL f
2
n
W
/
L
3
gm3
2
2
2
3
=
2v
1+
vn,in,w = 2vn11+
n1
g
1 W / L
m1
1
and for the 1/f term:
K L2
1
K
2
F1
vn,in,1/
1+ F 3 21
f = 2
1CoxW1L1 f KF1L3
(
(
)
)
Where KF1 and KF3 are the flicker noise coefficient for
transistors M1 and M3. The white contribution of the active
load is reduced by choosing (W/L)input >> (W/L)load. The 1/f
noise contribution of the active load is reduced by choosing
Linput < Lload. If the above conditions are satisfied the input
noise is dominated by the input pair.
Analog Design for CMOS VLSI Systems
Franco Maloberti
Cascode scheme:
The noise is contributed by
the input pair and the current
sources of the cascode load.
2
vn,in
2
gm4
2
2
= 2 vn1 +
v
n4
gm1
gm1
gm1
Analog Design for CMOS VLSI Systems
Franco Maloberti
Frequency response:
The input referred noise generator is transmitted to the
output as a conventional input signal
The feedback network around the op-amp must be taken
into account.
One stage amplifier:
Power of noise:
We consider only the white term.
Single stage amplifier:
v
2
n0
df
8
= v
= 2 1+ kT
3
1+ s / p1
0
2
n
0
1
df
gm1 1+ 2fC / g
0
m1
8
kT
= 1+
3
C0
2
n2
8 kT
= 2 1+
3 gm2
p2 =
gm2
C1 + C2
2
n0
v
0
+
2
vn0
=
2
n2
df
1+ s / p2
kT
4
1+
C1 + C2
3
Layout
Rules:
Use poly connections only for voltage signals, never for
currents, because the offset RI 15 mV.
Minimize the line length, especially for lines connecting
high impedance nodes.
Use matched structure (necessary common centroid).
Respect symmetries (even respect power devices).
Only straight-line transistors.
Separate (or shield) the input from the output line, to
avoid feedback.
Shield high impedance nodes to avoid noise injection
from the power supply and the substrate.
Regular shapes and layout oriented design.
Analog Design for CMOS VLSI Systems
Franco Maloberti
Stacked layout:
2W
Csb = Cdb = Cjb
(d + 2x j )
3
Capacitances are
further reduced if the
diffusion area is shared
between different
transistors.
Analog Design for CMOS VLSI Systems
Franco Maloberti
If we divide a transistor in
an even number of parts
the resulting stack has
source or drain on the two
sides.
5. CMOS Operational Amplifiers
78
Example:
Routing into stacks: use of comb connections or serpentine
connections.