Ning Liu

Ph.D. Female
Email: ningliuln@163.com
RESEARCH SKILLS
3+ years experience in semiconductor materials growth
*Skilled in MBE (Riber 32P) Technology

5+ years experience in semiconductor lasers and superluminescent diodes design and fabrication
*Skilled in photetch of semiconductor lasers and superluminescent diodes
*Skilled in testing device properties (P-I curve, EL)

5+ years experience in nanostructure material properties testing

*Skilled in AFM, STM, TEM, XRD
*Skilled in PL and EL
*Skilled in Hall Effect
Skilled in software: MATLAB, Origin, AutoCAD

EDUCATION
Ph.D. in Materials Physics and Chemistry
Sep. 2004-Jun. 2007
Institute of Semiconductors, Chinese Academy of Sciences (CAS), China
Research on self-assembled quantum dot nanomaterials and quantum dots superluminescent light
emitting diodes
Dissertation: Quantum Dot Superluminescent Diodes

Master in condensed matter physics

Jilin University, Changchun, China
Thesis: 40Cr Steel and Powder Metallurgy Parts Plasma Nitriding

Sep. 1995-Jun. 1998

Bachelor in Materials Science and Engineering

Jilin University, Changchun, China

Sep. 1991-Jun. 1995

RESEARCH EXPERIENCE
Participated in the research project Material size effect and its related scientific problems (90301007),
major research project of National Natural Science Foundation of China
Sep. 2004 Mar. 2011
Responsibility:
Developed high power and broadband quantum-dot superluminescent diodes
*Designed, fabricated and developed high power and broadband InAs/GaAs quantum-dot
superluminescent diodes, achieving an output of above 30mW and a spectral bandwidth of above 110
nm at room temperature. This is one of the best results in the world.
Broadband Self-assembled quantum dot materials
*Proposed and achieved 145nm photoluminescence spectral bandwidth with AlGaAs space layer.

*Proposed and achieved above 155nm photoluminescence spectral bandwidth with part coupling
multi-stacked InAs/GaAs quantum dots.
Required skills:
MBE (Riber 32P) Technology, Devices fabrication, photetch, TEM, AFM, PL, EL, P-I

Participated in the research project Strained self-organized quantum dots and the controllability growth of
the quantum wire material and device applications(2006CB604904), National Key Basic Research and
Development Program (973)
Sep. 2004 Mar. 2011
Responsibility:
Long-wavelength quantum dot materials
* Achieved room temperature PL in the 1.3 m range with about 28 meV PL line width and high PL
intensity from multi-stacked Self-assembled InAs/GaAs QDs.
Required skills:
MBE (Riber 32P) Technology, Devices fabrication, photetch, TEM,AFM,PL,EL,P-I

Participated in the research project Advanced resin-based composite materials manufacturing process
and performance, China Commercial Aircraft Co., Ltd.
Mar. 2009-Mar. 2011
Responsibility:
Characterization of composite materials
Required skills:
Low temperature Ar+-ion milling technique, TEM, EDS, EELS,

Participated in the research project Carbon fiber reinforced advanced resin matrix composite
microstructure by TEM, National Key Basic Research and Development Program (973)
Mar. 2009-Mar. 2011
Responsibility:
TEM and EELS study of Interfacial Characteristics in Carbon Fiber Reinforced Polymer Composites
* Detected the interphase with a wavy shape and a width from 100 to 160 nm
* Proposed and identification of the interphase region by EELS used as fingerprint tool to provide
information on the bonding and chemistry valence states
Required skills:
Low temperature Ar+-ion milling technique, TEM, EDS, EELS,

Participated in the research on the production of the photovoltaic device of the Quantum-Dot
Sep. 2007 Mar. 2011
Responsibility:
Photovoltaic device fabrication
Characterization of Quantum-Dot Material and Devices
Required skills:
Devices fabrication, SEM, AFM, PL, EL, P-I

Participated in the research project Tunneling injection quantum dot lasers(60306010), Youth Fund of the
National Natural Science Foundation of China
Sep. 2004 Jun. 2007
Responsibility:
Characterization of Quantum-Dot Material and Devices
Required skills:
AFM,PL,EL,P-I

WORK EXPERIENCE

Patent Examiners
State Intellectual Property Office of China

Research Associate
Beijing University of Aeronautics & Astronautics, China

Lecturer
Jul. 1998 Sep. 2004 &Jul. 2007-Mar. 2009
Beijing Forestry University, China
Courses taught:
Undergraduate: Physics, Physics Experiments, Electrical engineering, Broadband Network
Technology
Graduate: X-Ray technology

Apr. 2011 Present

Mar. 2009 Mar. 2011

SELECTED PUBLICATIONS
1) Ning Liu, Peng Jin and ZhanGuo Wang, Broadband Light-Emitting from Multilayer-stacked InAs/GaAs
Quantum Dots, Chinese Physics B, 2012, 21(11), 117305(SCI)
2) P. Jin, X. Q. Lv, Ning Liu, Z. Y. Zhang and Z. G. Wang, Study on Broadband Emitting Self-Assembled
Quantum-Dot Material and Devices, the 3rd IEEE International Nano Electornics Conference
(INEC2010), Vols 1 and 2: pp. 304-305, edited by Chu PKI, Jan. 3-8, 2010, Hongkong, China.
3) Xueqin Lv, Ning Liu, Peng Jin et al. Broadband Emitting Superluminescent Diodes with InAs Quantum
Dots in AlGaAs Matrix, Photonics Technology Letter, IEEE, 2008, 20(20), 1742-1744.SCI
4) Ning Liu, Peng Jin and ZhanGuo Wang, Ju Wu, 1.3m Photoluminescence from Multi-Stacked
InAs/GaAs Quantum Dot Structure, Chinese Journal of Semiconductors, 2007, 28(z1), 215-217(EI)
5) LiKe Yu, Bo Xu, Zhanguo Wang, Peng Jin, Chang Zhao, Wen Lei, Liangjun Hu, and Ning Liu,
Formation Process of S-K Quantum Dots, Chinese Journal of Semiconductors (2006), Vol.27 No.13,
pp.80-83
6) Ning Liu, Peng Jin and ZhanGuo Wang, InAs/GaAs quantum-dot superluminescent diodes with 110 nm
bandwidth, Electronics Letters, IEEE, 41(25), 2005, 1400-1401(SCI)
PATENTS

Ning Liu, Peng Jin and ZhanGuo Wang, Wide spectrum of InAs / AlGaAs quantum dot material
growth method. No. ZL200610064883.8

Ning Liu, Peng Jin and ZhanGuo Wang, Wide spectrum indium arsenide / gallium indium arsenide /
gallium arsenide quantum dot material growth method. No. ZL 200610002667.0

Ning Liu, Peng Jin and ZhanGuo Wang, Long-wavelength InAs / GaAs quantum dots. No.
ZL200610088947.8

PRESENTATIONS
The 9th China International Conference on Nanoscience and Nanotechnology, Xian, Shanxi, Nov.18,
2010(Poster).

The 14th Conference on Compound Semiconductor Materials, Microwave Devices and Optoelectronic
Devices, Beihai, Guangxi, P. R. China, Nov. 4, 2006 (Talk).

HONORS AND AWARDS

The Second Prize by Institute of Semiconductors, Chinese Academy of Sciences, Development of wide
spectrum superluminescent light emitting diodes,
2006

Teaching Excellence Award by Beijing Forestry University,

2004

Outstanding Graduates, Jilin University, Changchun, China,

1998