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Executive Summary:
Working experience as a process engineer in high tech semiconductor industries
Expert in characterization, thermo-mechanical deformation behavior of
semiconductor materials and reliability assessment, semiconductor metrology
Hands on experience in wet cleaning of semiconductor wafers and analyses
An enthusiast goal oriented individual and an effective team player
Experience: Sr. Lecturer, University of Science and Technology Chittagong Aug. 2022 – July, 2023
Conducting lectures on the courses such as VLSI design, , digital logic design,
electronic devices and circuits
PhD Thesis Writing, University of Leoben, Austria Feb. 2019 – Sept. 2023 (Expected)
PhD topic: Material behaviour of semiconductor devices during real time
operation – method development and verification
Analysis of thermo-mechanical behaviour of metallization materials used in
semiconductor devices during extreme heating and cooling rates
Method development to calculate stress data from electrical stress tests
Automation of data analysis by MATLAB coding and NI Vision builder AI
Process Engineer, Lam Research AG, Villach, Austria June 2017 – Oct 2018
Conducted defect analysis by wet cleaning processes on semiconductor
wafers by Lam wet cleaning tools DV Prime and EOS
Compared the surface properties undergoing different process parameters
Extensive collection of data and analysis of data by data analysis tools
Investigated defects for advanced technology node test structures undergoing
different semiconductor process steps
Managed projects to qualify systems for semiconductor manufacturing
Worked with international customers and fulfilled their requirements by
constantly updating in-house technologies – report and data generation
Wafer surface analysis by SEM, EDX, SP3, FX200, LD10 and Raytex systems
Research Engineer at KAI GmbH, Villach, Austria June 2013 – March 2017
Developed a novel experimental setup to investigate thermo-mechanical
failure mechanisms of metal thin films used in semiconductor devices
undergoing very high heating (105 - 106 K/s) and cooling rates
Investigated material properties and reliability of power metallization thin
films during conditions close to the real time operating conditions
Conducted Thermal-Electric simulation in ANSYS Workbench; Compared the
experimental results with the ANSYS FEM (APDL) simulation results
Visiting Scientist, WPI-AIMR, Tohoku University, Japan March 2013 – May 2013
Study of metallic glassy materials for MEMS applications
Investigated reactive ion etching (RIE) profile of metallic glassy thin films
Master Thesis, Infineon Technologies, Dresden, Germany Jan. 2012–Sep. 2012
Responsible for "Fabrication and characterization of Cu-Al based self-forming
diffusion barrier for modern Cu interconnect technology"
Conducted electrical failure analysis tests and electrical characterization of
MOS interfaces by the bias temperature stress(BTS)and the voltage ramp(V-
Ramp) techniques: HP4155A, Agilent4155C
Design of Experiments (DOE): Defining experimental set-ups (e.g.
deposition conditions, suitable annealing condition to realize the self-forming
barrier, measurement conditions)
Explanation and interpretation of TEM, EDX, AES, XPS and ToF-SIMS
analyses results on metal-oxide-semiconductor (MOS) interface properties
Master Research Project, Leibniz Institute for Solid State and Materials Research,
Dresden, Chemnitz site, Germany Feb. 2011 – Aug. 2011
Responsible for Fabrication of self-rolling micro-tubes on flexible polymer foil
for sensoric applications by sputtering deposition technique