MOSFET

IC

SMD Type
N-Channel MOSFET
AO3404-HF (KO3404-HF)
SOT-23

Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1

Features

RDS(ON)
RDS(ON)

28 m
43 m

(VGS = 10V)
(VGS = 4.5V)

0.55

ID =5.8 A (VGS=10V)

+0.1
1.3 -0.1

+0.1
2.4 -0.1

VDS (V) = 30V

0.4

2
+0.1
0.95 -0.1
+0.1
1.9 -0.1

+0.05
0.1 -0.01

+0.1
0.97 -0.1

PbFree Package May be Available. The GSuffix Denotes a

0-0.1

G
S

+0.1
0.38 -0.1

PbFree Lead Finish

1. Gate
2. Source
3. Drain

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

20

Continuous Drain Current

Ta=25
Ta=100

Pulsed Drain Current

Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range

ID
IDM

Ta=25
Ta=70
t 5sec
Steady State

PD
RthJA

Unit
V

5.8
4.9

20
1.4
1

90
125

RthJL

60

TJ

150

Tstg

-55 to 150

/W

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MOSFET
IC

SMD Type
N-Channel MOSFET
AO3404-HF (KO3404-HF)
Electrical Characteristics Ta = 25
Parameter

Symbol

Testconditions

Min

Typ

VDSS

Zero Gate Voltage Drain Current

IDSS

Gate-Body leakage current

IGSS

VDS=0V, VGS= 20V

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=250 A

On state drain current

ID(ON)

VGS=4.5V, VDS=5V

20

ID=250 A, VGS=0V

RDS(ON)

VDS=24V, VGS=0V

VDS=24V, VGS=0V ,TJ=55

gFS

VDS=5V, ID=5.8A

Diode Forward Voltage

VSD

IS=1A

Maximum Body-Diode Continuous Current

Ciss

Gate resistance

Coss

Input Capacitance

Crss

Output Capacitance

Rg

43
10

14.5

VGS=0V, VDS=15V, f=1MHz

m
S

0.76

1
2.5

680

820

pF

102
3

pF

77
VGS=0V, VDS=0V, f=1MHz

pF
3.6

Total Gate Charge (10V)

Qg

13.88

17

nC

Total Gate Charge (4.5V)

Qg

6.78

8.1

nC

Gate Source Charge

Qgs

VGS=10V, VDS=15V, ID=5.8A

1.8

nC

Gate Drain Charge

Qgd

3.12

Turn-On Rise Time

tD(on)

4.6

6.5

ns

Turn-Off DelayTime

tr

3.8

5.7

ns

Turn-Off Fall Time

tD(off)

VGS=10V, VDS=15V, RL=2.7 ,RGEN=3

Turn-On DelayTime

tf

Body Diode Reverse Recovery Time

trr

IF=5.8A, dI/dt=100A/

Body Diode Reverse Recovery Charge

Qrr

IF=5.8A, dI/dt=100A/

Marking
Marking

38

TJ=125

IS

Reverse Transfer Capacitance

nA
A

VGS=4.5V, ID=5.0A
Forward Transconductance

100

28

VGS=10V, ID=5.8A

Unit
V

VGS=10V, ID=5.8A
Static Drain-Source On-Resistance

Max

30

Drain-Source Breakdown Voltage

A4* F

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nC

20.9

30

ns

7.5

ns

16.1

21

ns

7.4

10

nC

MOSFET

SMD Type
N-Channel MOSFET
AO3404-HF (KO3404-HF)
Typical Characterisitics

10V

25

20

6V
5V
4.5V

ID (A)

20
15

3.5V

10

12
8
125C

VGS=3V

VDS=5V

16

4V
ID(A)

30

25C

0
0

0.5

60
Normalized On-Resistance ()

RDS(ON) (m)

1.5

2.5

3.5

4.5

1.6

50
VGS=4.5V

40
30
20

VGS=10V

10
0

10

15

VGS=10V

ID=5A

1.5
1.4

VGS=4.5V

1.3
1.2
1.1
1
0.9
0.8

20

ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage

50

100

150

200

Temperature ( C)
Figure 4: On-Resistance vs. Junction Temperature

1.0E+01

70
60

1.0E+00

ID=5A

50

IS Amps

RDS(ON) (m)

VGS (Volts)
Figure 2: Transfer Characteristics

VDS (Volts)
Fig 1: On-Region Characteristics

125C

40

1.0E-01
1.0E-02

125C

1.0E-03

30
20

25C

1.0E-04

25C

1.0E-05

10
2

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

10

0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts)
Figure 6: Body diode characteristics

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MOSFET

SMD Type
N-Channel MOSFET
AO3404-HF (KO3404-HF)
Typical Characterisitics
10

f=1MHz
VGS=0V

900
800
Capacitance (pF)

8
VGS (Volts)

1000

VDS=15V
ID=5.8A

6
4
2

700
Ciss

600
500
400
300
200

Coss

100
0
0

10

12

Crss

14

Qg (nC)
Figure 7: Gate-Charge characteristics

100

10ms

1s
DC
0.1

10

100

VDS (Volts)
Figure 9: Maximum Forward Biased. Safe
Operating Area (Note E)

ZJA Normalized Transient

Thermal Resistance

10
D=T on/T
TJ,PK=T A+PDM.ZJA.RJA
RJA=90C/W

30

20

0
0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD

0.1

Ton

Single Pulse
0.01
0.00001

25

10

10s
0.1

20

TJ(Max)=150C
TA=25C

30

100s 10s

0.1s
1

15

40

Power W

ID (Amps)

1ms

10

10

VDS (Volts)
Figure 8: Capacitance Characteristics

TJ(Max)=150C
TA=25C

RDS(ON)
limited

0.0001

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0.001

0.01

0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

100

1000