Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________

Chapter 8
8.1
(b) (i) R D =
PD , max

24
= 6
4
= (12 )(2 ) = 24 W

(ii) PD , max = 30 = (20 )I DQ I DQ = 1.5 A

I D , max = 2(1.5) = 3 A

RD =

(c) (i) I D , max

40
= 13.3
3
= 4A

(ii) I D , max = 3 A
______________________________________________________________________________________
8.2
(a) PQ , max = VCEQ I CQ
24
25 = I CQ I CQ = 2.083 A
2
24 12
RL =
= 5.76
2.083
2.083
I BQ =
= 0.03472 A
60
24 0.7
RB =
= 671
0.03472
VT (60 )(0.026 )
(b) r =
=
= 0.7489
I CQ
2.083
Ib =

Vp
r

12 mV
= 16.02 mA
0.7489

I c = I b = (60 )(0.01602 ) = 0.9614 A

1 2
1
2
I c RC = (0.9614 ) (5.76 ) = 2.66 W
2
2
For the transistor,
PQ = 25 2.66 = 22.34 W
Pavg =

______________________________________________________________________________________
8.3
30
= 25
1. 2
I CQ 0.6
I BQ =
=
= 0.0075 A
80

V V BE (on ) 30 0.7
R B = CC
=
R B = 3.91 k
I BQ
0.0075

(a) R L =

PQ , max = I CQ V CEQ = (0.6 )(15 ) = 9 W

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
VCC VCEQ
VCEQ
(b) PQ , max = I CQ VCEQ =

RL

1
VCEQ = VCC
2
1 VCC V CC
22.36
5=

V CC = 22.36 V; I C , max =
= 0.8944 A
25
25 2 2
1
(I C )2 R L = 1 (0.6)2 (25) = 4.5 W
2
2
0.8944
1
2
For (b): I C = I CQ =
= 0.4472 A; PL = (0.4472) (25) = 2.5 W
2
2
______________________________________________________________________________________

(c) For (a): I C = 0.6 A; PL =

8.4

Point (b): Maximum power delivered to load.

Point (a): Will obtain maximum signal current output.
Point (c): Will obtain maximum signal voltage output.
______________________________________________________________________________________
8.5
a.

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
b.
VGG = 5 V, I D = 0.25 ( 5 4 ) = 0.25 A, VD S = 37.5 V, P = 9.375 W
2

VGG = 6 V, I D = 0.25 ( 6 4 ) = 1.0 A, VD S = 30 V, P = 30 W

2

VGG = 7 V, I D = 0.25 ( 7 4 ) = 2.25 A, VD S = 17.5 V, P = 39.375 W

2

VGG = 8 V, I D

= 0.25 2 ( 8 4 ) VD S VD2 S
=

40 VD S

10
I D = 3.71 A, P = 10.8 W
VGG = 9 V, I D

VD S = 2.92

= 0.25 2 ( 9 4 )VD S VD2S

=

40 VD S

VD S = 1.88 V
10
I D = 3.81 A, P = 7.16 W
V = 7 V, P = 39.375 W > PD ,max = 35 W
c.
Yes, at GG
______________________________________________________________________________________

8.6
a.
VDD
= 25 V
2
50 25
=
= 1.25 A
20

Set VDSQ =
I DQ

I DQ = K n (VGS VTN )

1.25
+ 4 = VGS = 6.5 V
0.2
R2
VGS =
VDD
R1 + R2
Let R1 + R2 = 100 k
R
6.5 = 2 ( 50 ) R2 = 13 k
100
R1 = 87 k

b.
c.

PD = I DQVDSQ = (1.25 )( 25 ) PD = 31.25 W

I D ,max = 2 I DQ I D ,max = 2.5 A
VDS ,max = VDD VDS ,max = 50 V
PD ,max = 31.25 W

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
d.
V0
= g m RL
Vi
g m = 2 K n I DQ = 2

( 0.2 )(1.25) = 1 A / V

V0 = (1)( 20 )( 0.5 ) = 10 V
1 V02 1 (10 )

=
PL = 2.5 W
2 RL 2 20
2

PL =

PQ = 31.25 2.5 PQ = 28.75 W

______________________________________________________________________________________
8.7
(a)

(b)

PD = PD ,max ( Slope ) (T j 25 )

At PD = 0, T j ,max =

60
+ 25 T j ,max = 145C
0.5

T j ,max Tcase

145 25
dev amb = 2C/W
60
or
(c)
______________________________________________________________________________________
PD ,max =

8.8

PD ,rated =

dev amb

dev amb =

T j ,max Tamb

dev case

or dev case =

T j ,max Tamb
PD ,rated

150 25
= 2.5C/W
50
Then Tdev Tamb = PD ( dev case + case amb )
150 25 = PD ( 2.5 + case amb ) 125 = PD ( 2.5 + case amb )
=

______________________________________________________________________________________
8.9
(a) T j , max Tamb = PT ( dev case + snk amb + case snk )
120 25 = PT (1.5 + 2.8 + 0.6) PT = 19.39 W

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
(b) Tcase = 25 + (19.39 )(0.6 + 2.8) = 90.9C
(c) Tsnk = 25 + (19.39)(2.8) = 79.3C
______________________________________________________________________________________
8.10
(a) T j , max Tamb = P ( dev case + case amb )

150 25 = 30(2.8 + case amb ) case amb = 1.37C / W

(b) T j , max = 25 + 20(2.8 + 1.37 ) = 108C

______________________________________________________________________________________
8.11
(a) 150 25 = PT (3.8 + 1.5 + 4 ) PT = 13.4 W
(b) P = I CQ V CEQ
13.4 = (3) V CEQ V CEQ = 4.48 V
V CC = V CE , max = 2V CEQ = 8.96 V

______________________________________________________________________________________
8.12

PL
PS

PS = VCC I Q
V
PL = VP I P = CC ( I Q )
2
1
VCC I Q
= 2
= 50%
VCC I Q

______________________________________________________________________________________
8.13

(a) A =

(1 + )R L
r + (1 + )R L

(1 + )R L

VT
IC

+ (1 + )R L

We have (1 + )
I C RL
RL
RL
A =
=
=
V
1
I C R L + VT
RL +
RL + T
gm
IC
8

(b) (i) 0.9 =

8+

1
gm

g m = 1.125 A/V, I C = 29.25 mA

(ii) 0.95 =

8+

1
gm
8

g m = 2.375 A/V, I C = 61.75 mA

g m = 41.54 A/V, I C = 108 mA

1
8+
gm
______________________________________________________________________________________

(iii) 0.997 =

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
8.14
2
2
1 Vp
1 Vp

0.5 =
V p = 2.828 V
2 RL
2 8
V p 2.828
=
= 0.3536 A
Ip =
8
RL
(b) For V o = V p = 2.828 V

(a) PL =

I L = 0.3536 = (0.9)I O I O = 0.393 A

______________________________________________________________________________________
8.15
1.6
= 0.20 A
8
I C 0.2 + 0.25 = 0.45 A

(a) VO = 1.6 V, I L =

0.45
= 17.31 A/V
0.026
8
A =
= 0.9928
1
8+
17.31
(b) VO = 0 , I L = 0 , so I C = 0.25 A
gm =

0.25
= 9.615 A/V
0.026
8
A =
= 0.9872
1
8+
9.615
(c) VO = 1.6 V, I L = 0.2 A, I C 0.25 0.2 = 0.05 A
gm =

0.05
= 1.923 A/V
0.026
8
A =
= 0.939
1
8+
1.923
______________________________________________________________________________________
gm =

8.16

vo ( max ) = 4.8 V
iC 3 = iC 2 =
vI = vo + 0.7

0.7 ( 5 )
1

iL ( max ) = 4.3 mA =

so 3.6 vI 5.5 V vo ( min ) = 4.3 V

= 4.3 mA
vS ( min )
1

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
8.17
I D 3 = K (VGS 3 VTN ) =
2

0 VGS 3 ( 5 )
R

12 (VGS 3 0.5 ) = 5 VGS 3

2

2VGS2 3 11VGS 2 = 0
VGS 3 =

11

(11)

+ 4 (12 )( 2 )

2 (12 )

VGS 3 = VGS 2 = 1.072 V

I D 3 = I D 2 = 12 (1.072 0.5 ) = 3.93 mA
VDS 2 ( sat ) = VGS 2 VTN = 1.072 0.5 = 0.572 V
2

vo ( min ) : i2 ( max ) = 3.93 =

vI ( min ) = vo ( min ) + VTN
vI ( min ) = 3.43 V

V0 ( min )

1
= 3.93 + 0.5

V0 ( min ) = 3.93 V

vo ( max ) = 5 VDS ( sat ) = 5 0.572

vo ( max ) = 4.43 V
I D1 ( max ) = 3.93 +

4.43
= 8.36 mA
1

I D1 = 8.36 = 12 (VGS 1 0.5 ) VGS 1 = 1.33 V

vI ( max ) = vo + VGS1 = 4.43 + 1.33 vI ( max ) = 5.76 V
2

______________________________________________________________________________________
8.18

(a) For O = 12 + 0.7 = 11.7 V, I Q =

11.3
+ 50 = 615 mA
0.02

2
2

I REF = 1 + I Q = 1 + (615) = 645.75 mA

40

0 0.7 ( 12 )
R=
R = 17.5
0.6475
11.3
For O = 12 0.7 = +11.3 V, i L =
= 565 mA
0.02
i E1 (max ) = I Q + i L = 615 + 565 i E1 (max ) = 1.18 A
2
2
1 VO 1 (11.3)

=
= 3.19 W
2 RL 2
20
PS = I Q (24 ) = (0.615 )(24 ) = 14.76 W

(b) PL =

PL
3.19
=
100% = 21.6%
PS 14.76
______________________________________________________________________________________

Define =

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
8.19
20
(a) VO = 20 V, i L =
= 0.10 A
200
I Q = 0.10 + i E1 (min ) = 0.10 + 0.02 = 0.12 A

2
2

I REF = 1 + I Q = 1 + (0.12 ) = 0.1248 A

50

0 0.7 ( 24 )
R=
= 187
0.1248
(b) PQ1 = I Q VCE1 = (0.12 )(24 ) = 2.88 W

P = I Q VCE 2 + I REF (24 ) = (0.12 )(24 ) + (0.1248 )(24 ) = 5.88 W

(c) PL =

( )

2
1 VO 1 20 2

=
=1W
2 R L 2 200

1
100% = 11.4%
2.88 + 5.88
______________________________________________________________________________________

8.20

I D1 = K n (VGS VTN ) = 12 ( 0 ( 1.8) )

2

I D1 = 38.9 mA
(a)
For RL =

vo ( max ) = 4.8 V

VDS ( sat ) = VGS VTN = 1.8 V

vo ( min ) = 5 + 1.8 = 3.2 V
vI = vo + 0.7 2.5 vI 5.5 V
(b)

For

RL = 500 vo ( max ) = 4.8 V

vo < 0, vo ( min ) = 3.2 V

For

I 2 =

vo 3.2
=
= 6.4 mA
RL
0.5

2.5 vI 5.5 V

(c)

For vo = 2V , I 2 ( max ) = 38.9 mA

R2 ( min ) =

2
RL ( min ) = 51.4
38.9

1 v2 1 ( 2)
PL = 38.9 mW
PL = o =
2 RL 2 51.4
2

38.9
= 10%
389
______________________________________________________________________________________
PL = 10 ( 38.9 ) = 389 mW % =

8.21

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
+
V 2 (V )
PL = P =
RL
RL

1 (V ) 1 (V )
, V = V +
+
PS =
2 RL
2 RL
+ 2

(V )
=

+ 2

So PS

RL

PL

= 100%
PS
______________________________________________________________________________________

8.22
(a)
As maximum conversion efficiency

VP
= 0.785
VCC

4
So V p ( max ) = ( 0.785 )( 5 )

V p ( max ) = 5 V

(b)

Maximum power dissipation occurs when

V2
P ( max ) = 2CC
RL
2=

( 5)

Vp =

2VCC

2 ( 5)

= 3.183 V

2 RL

RL = 1.27

(c)
______________________________________________________________________________________
8.23
P=

(a)
(b)

2
1 Vp

2 RL

2
1 Vp

V p = 49 V V + = 52 V, V = 52 V
2 24
VP 49
IP =
=
= 2.04 A
RL 24

50 =

VP

4 VCC

49

4 52

= 74.0%
(c)
______________________________________________________________________________________

8.24

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
(a)
VDS VDS ( sat ) = VGS VTN = VGS
VDS = 10 Vo ( max ) and I D = I L = K n (VGS )
Vo ( max )
RL
VGS =

= K n (VGS )

Vo ( max )
RL K n
Vo ( max )

So 10 Vo ( max ) =
10 V0 ( max ) =
2

RL K n

V0 ( max ) =

VGS

( 5 )( 0.4 )

V0 ( max )

V02 ( max ) 20.5V0 ( max ) + 100 = 0

20.5

Vo ( max )

V0 ( max )

100 20V0 ( max ) + V02 ( max ) =

iL =

( 20.5 )

4 (100 )

V0 ( max ) = 8 V

8
iL = 1.6 mA
5
i
1.6
= L =
= 2 V VI = 10 V
0.4
Kn

b.
1 (8)

= 6.4 mW
2 5
20 (1.6 )
PS =
= 10.2 mW
2

PL =

PL

6.4
= 62.7%
10.2

PS
______________________________________________________________________________________
8.25
(b) I = GSn + o

Also o = i L R L = i dn R L = KR L ( GSn ) , but GSn = I o

2

So o = KR L ( I o )

d
d o
= 2 KR L ( I o )1 o
d I
d I

2 KR L ( I o )
d o
=
, also I o =
d I 1 + 2 KR L ( I o )

Then

2 KR L o
d o
= A =
d I
1 + 2 KR L o

o
KR L

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
KR L =

We find

(4)(0.05) = 0.4472

(i)

For o = 0 , A = 0

(ii)

For o = 1 V, A =

2(0.4472)(1)
= 0.472
1 + 2(0.4472)(1)

For o = 10 V, A =

2(0.4472 ) 10

= 0.739
1 + 2(0.4472 ) 10
______________________________________________________________________________________

(iii)

8.26
10 3
i
V
(a) iCn = I S exp BE V BE = VT ln Cn = (0.026) ln
15
VT
2 10
IS
V BB = 2V BE = 1.40077 V
PQ = i C CE = (1)(5) = 5 mW

= 0.7004 V

3.5
= 3.5 mA i L
1
3.5 10 3
= 0.732957 V
= (0.026) ln
15

2 10
= 1.40077 0.732957 = 0.66781 V

(b) For o = 3.5 V, iCp

EB
BE

0.66781
i Cn = 2 10 15 exp
i Cn = 0.2857 mA
0.026
Then iCp 0.2857 + 3.5 = 3.7857 mA

3.7857 10 3
= 0.734997 V
15

2 10
= 1.40077 0.734997 = 0.66577 V

EB = (0.026 ) ln
BE

0.66577
i Cn = 2 10 15 exp
i Cn = 0.2642 mA
0.026
i Cp = 3.5 + 0.2642 = 3.764 mA

V BB
= 3.5 0.735 + 0.7004 = 3.535 V
2
2
= i L2 R L = (3.5) (1) = 12.25 mW

I = o EB +

For R L : PRL
For Q n : PQn = i Cn CEn = (0.2642 )[5 ( 3.5)] = 2.25 mW

For Q p : PQp = i Cp ECp = (3.764 )[ 3.5 ( 5)] = 5.65 mW

______________________________________________________________________________________
8.27
2
(a) (i) i Dn = K n ( GSn VTN )
V BB
= 2 V, V BB = 4 V
2
= (1)(12 ) = 12 mW

1 = 4( GSn 1.5) GSn =

2

(ii) P = i Dn DSn

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
V DS (sat )

2
(b) (i) i D = K [ DS (sat )] = o = DD
RL
RL

KR L [ DS (sat )] + DS (sat ) V DD = 0
Now KR L = (4 )(1) = 4
2

We have 4[ DS (sat )] + DS (sat ) 12 = 0 DS (sat ) = 1.612 V

o (max ) = 12 1.612 = 10.39 V
(ii) i Dn = i L = 10.39 mA
i Dp = 0
2

GSn = 3.112 V
V BB
+ GSn + o = 2 + 3.112 + 10.39 = 11.5 V
2
2
(iii) For R L : PRL = i L2 R L = (10.39) (1) = 108 mW
For M n : PMn = i Dn DSn = (10.39)[12 10.39] = 16.7 mW
For M p : PMp = i Dp SDp = 0

I =

______________________________________________________________________________________
8.28
a.

v0 = 24 V iL =

24
iL iN = 3 A
8

3
iBn = 73.2 mA
41
For iD = 25 mA iR1 = 25 + 73.2 = 98.2 mA
i
3

VBE = VT ln N = ( 0.026 ) ln
12
I

6
10

S
iBn =

= 0.7004 V
Then 98.2 =

30 ( 24 + 0.7 )
R1

R1 =

5.3
R1 = 53.97
98.2

25 103
= 0.5759 V
VD = ( 0.026 ) ln
12
6 10
VEB = 2VD VBE = 2 ( 0.5759 ) 0.7004
= 0.4514 V
V
0.4514
iP = I S exp EB = ( 6 1012 ) exp
iP = 0.208 mA
V
0.026
T
b.
Neglecting base current
iD

30 0.6 30 0.6
=
iD 545 mA
R1
53.97

0.545
VD = ( 0.026 ) ln
12
6 10

= 0.656 V

Approximation for iD is okay.

iN = iP = 545 mA
Diodes and transistors matched
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
8.29
(a)
I D1 = K1 (VGS 1 VTN )
VGS1 =

5
+1 = 2 V
5

I D 3 = K 3 (VGS 3 VTN )

200 = K 3 ( 2 1) K n3 = K p 4 = 200 A / V 2
2

(b)
vI + VSG 4 + VGS 3 VGS1 = vO
For vo large, iL = i1 = K n1 (VGS1 VTN )
VGS 1 =

iL
+ VTN =
K n1

So vI + 2 + 2

vo
+ VTN
RL K n1

vo
+ 1 = v0
( 0.5 )( 5 )

v0
3
2.5
dv 1
dv
dvI
1
=1= 0 +
0
dvI
dvI 2 2.5v0 dvI

vI = v0 +

1
1 +

2 2.5v0
vO = 5 V :

1=

For

dv0
dvI

dv
dv0
dv
1
1 +
= 0 (1.1414 ) 0 = 0.876
dvI 2 2.5 ( 5 ) dvI
dvI

______________________________________________________________________________________
1=

8.30
vO = vI +

VBB
VGS and VGS =
2

vO 0, I Dn = I DQ + iL = I DQ +

For

vO = vI +
Then

I Dn
+ VTN
Kn
vO
RL

I DQ + ( vO / RL )
VBB
VTN
2
Kn

vO vI +

vO = vI +
or

I DQ
VBB
1 v
VTN
1+ O
2
2 I DQ RL
Kn

For vO small,
1 I DQ
I DQ
V
1
vO 1 +

= vI + BB VTN
2
2
K
I
R
Kn

n
DQ L

I DQ
v
VBB
VTN
1+ O
2
Kn
I DQ RL

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
Now
dvO
1
=
= 0.95
dvI 1 I DQ
1

1 +

2 K n I DQ RL

So

1 I DQ
1
1

=
1 = 0.0526
2 K n I DQ RL 0.95

RL = 0.1 k , then

K n I DQ

For
Or

= 0.01052

K n I DQ = 95.1

g = 2 K n I DQ = 190 mA/V
We can write m
This is the required transconductance for the output transistor. This implies a very large transistor.
______________________________________________________________________________________

8.31
(a) RTH = R1 R2 = 14 10 = 5.833 k
R2
10
VCC =
VTH =
(12 ) = 5 V
10 + 14
R1 + R 2
5 0.7
I BQ =
= 0.5619 mA, I CQ = 50.57 mA
5.833 + (91)(0.02)
V
12
(b) R L = CC =
R L = 237
I CQ 50.57
1 (11)

= 255 mW
2 0.237
(d) PS = I CQVCC = (50.57)(12) = 607 mW

(c) PL (max ) =

255
100% = 42%
607
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
8.32
V
15
I CQ = CC = = 15 mA
1
RL
I BQ =

15
= 0.15 mA
100

(15)
1 V2
PL ( max ) = CC =
PL ( max ) = 112.5 mW
2 RL
2 (1)
2

Let RTH = 10 k

VTH = I BQ RTH + VBE + (1 + ) I BQ RE

= ( 0.15 )(10 ) + 0.7 + (101)( 0.15 )( 0.1)
VTH = 3.715 =

1
1
RTH VCC = (10 )(15 )
R1
R1

R1 = 40.4 k
R2 = 13.3 k

______________________________________________________________________________________
8.33
(a) RTH = R1 R 2 = 2.3 1.75 = 0.9938 k
R2
1.75
VCC =
VTH =
(12 ) = 5.185 V
R
R
+
1.75 + 2.3
2
1
5.185 0.7
I BQ =
= 2.473 mA, I CQ = 98.91 mA
0.9938 + (41)(0.02)
V
12
(b) Want R L = CC =
= 121.3 = a 2 R L = a 2 (8) a = 3.89
I CQ 0.09891

(9) = 333.9 mW
1

2 (0.1213)
2

(c) PL =

PS = I CQVCC = (98.91)(12) 1.187 W

0.3339
100% = 28.1%
1.187
______________________________________________________________________________________

(d) =

8.34
a.

b.

Assuming the maximum power is being delivered, then

36
9
Vo ( peak ) = 36 V Vo =
= 9 V Vrms =
Vrms = 6.36 V
4
2
36
Vo =
Vo = 25.5 V
2

I rms =
c.

Secondary

Primary
d.

IP =

PL
2
=
I rms = 0.314 A
Vrms 6.36

0.314
I P = 78.6 mA
4

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
PS = I CQ .VCC = ( 0.15 )( 36 ) = 5.4 W
2
=
= 37%
5.4
______________________________________________________________________________________

8.35
a.

V
ve = + g mV
r

RE = V

+ g m RE
r

1+
= V
r
vi = V + ve V = vi ve

RE

1+
ve = (vi ve )
RE
r
1+
RE
2
n
(1 + ) RE
ve
r
v
=
=
= e where RE = 1 RL
vi 1 + 1 + R r + (1 + ) RE vi
n2
E
r
n
ve
so ve v0 1
n1
n2

n2
(1 + ) RE
v
1
so 0 =

vi n1 r + (1 + ) RE

n2
v0 =

b.
I
1
1
n1
2
PL = I P2 RL , a = , I CQ = P so PL = .a 2 I CQ
RL
2
2
n2
a
PS = I CQ .VCC
For = 50% :
1 2 2
a I CQ RL a 2 I R
V
VCC
VCC
PL
CQ L
so a 2 =
= 0.5 = 2
=
=
a 2 = CC
5
2VCC
I CQ VCC
I CQ RL ( 0.1)( 50 )
PS
c.
R0 =

49 ( 0.026 )
r
VT
=
=
R0 = 0.255
1 + (1 + ) I CQ ( 50 )( 0.1)

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
8.36
a.
With a 10:1 transformer ratio, we need a current gain of 8 through the transistor.

R1 R2
ie = (1 + ) ib and ib =
R R +R
ib
1 2

R1 R2
ie
= 8 = (1 + )
ii
R R +R
ib
1 2
so we need ii
Rib = r + (1 + ) RL (1 + ) RL = (101)( 0.8 ) = 80.8

where

R1 R2
Then 8 = (101)
R R + 80.8
1 2

R1 R2
= 0.0792 or R1 R2 = 6.95 k
R1 R2 + 80.8
Set

2VCC
V
12
= RL I CQ = CC =
= 15 mA
2 I CQ
RL 0.8
15
= 0.15 mA
100
= I BQ RTH + VBE

I BQ =
VTH

1
RTH VCC = I BQ RTH + VBE
R1
1
( 6.95)(12 ) = ( 0.15)( 6.95) + 0.7 R1 = 47.9 k then R2 = 8.13 k
R1

b.
I e = 0.9 I CQ = 13.5 mA =

IL
I L = 135 mA
a

1
2
( 0.135) ( 8) PL = 72.9 mW
2
PS = VCC I CQ = (12 )(15 ) PS = 180 mW
PL =

PL

= 40.5%
PS
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
8.37
a.
VP = 2 RL PL
VP = 2 ( 8 )( 2 ) = 5.66 V = peak output voltage
IP =

VP 5.66
=
= 0.708 A = peak output current
RL
8

Set Ve = 0.9VCC = aVP to minimize distortion

Then a =

( 0.9 )(18)
5.66

a = 2.86

b.

1 I P 1 0.708

I CQ = 0.275 A
=
0.9 a 0.9 2.86
Then PQ = VCC I Q = (18 )( 0.275) PQ = 4.95 W Power rating of transistor
Now I CQ =

______________________________________________________________________________________
8.38
a.

Need a current gain of 8 through the transistor.

R1 R2
ib
= 8 = (1 + )
R R +R
ii
ib
1 2

where Rib (1 + )( 0.9 ) = 90.9 k

R1 R2
8
=
= 0.0792 or R1 R2 = 7.82 k

101 R1 R2 + 90.9
Set

2VCC
12
= 0.9 k I CQ =
= 13.3 mA
2 I CQ
0.9

13.3
= 0.133 mA
100
1
Then
( 7.82 )(12 ) = ( 0.133)( 7.82 ) + 0.7 R1 = 53.9 k and R 2 = 9.15 k
R1
I BQ =

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
b.
I
I e = ( 0.9 ) I CQ = 12 mA = L I L = 120 mA
a
1
2
PL = ( 0.12 ) ( 8 ) PL = 57.6 mW
2
PS = VCC I CQ = (12 )(13.3) PS = 159.6 mW
PL 57.6
=
= 36.1%
PS 159.6
______________________________________________________________________________________

8.39
10 3

I
= 1.473 V
(a) V BB = 2VT ln Bias = 2(0.026) ln
16
5 10
I SD
1.473 2
(b) I CQ = I SQ exp
I CQ = 14 mA
0.026
______________________________________________________________________________________

8.40
3
I CQ

= (0.026) ln 4 10 = 0.73643 = V BEn = V EBp = V D

(a) V BE = VT ln
2 10 15
I SQ

V
0.73643
I Bias = I SD exp D = 4 10 16 exp
I Bias = 0.8 mA
V
0.026
T

(b) V BB = 2V D = 1.473 V
(c) I = V EBp = 0.7364 V
______________________________________________________________________________________
8.41
0.5 10 3
= 0.76025 V
(a) V D1 = (0.026 ) ln
16

10
0.5 10 3
= 0.72421 V
V D 2 = (0.026) ln
16

4 10
V BB = V D1 + V D 2 = 1.48446 V

(b) iCn = i Cp = I SQn exp BEn

VT
I SQp
I SQn

exp BEn
VT
=
EBp
exp
VT

exp BEn
VT

=
V BEn

exp BB

VT

I SQp
2 BEn V BB
= ln
I SQn
VT

BEn =

= I SQp exp EBp

V

2 V BB
= exp BEn
VT

I SQp
1
V BB + VT ln
I SQn
2

15
1

= 1.48446 + (0.026 ) ln 1.6 10

16

2
8 10

= 0.75124 V

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
EBp = V BB BEn = 0.73322 V

0.75124
(c) I CQ = I SQn exp BEn = 8 10 16 exp

V
0.026
T
i Cn = i Cp = 2.828 mA

(d) I = EBp = 0.73322 V

______________________________________________________________________________________
8.42
a.

All transistors are matched.

1+
iC
3 mA = iE1 + iB 3 =
iC +

61 1
3 = + iC iC = 2.90 mA
60 60

b.
R = 200 .
For vo = 6 V , let L
6
= 0.03 A = 30 mA iE 3
200
30
iB 3 =
= 0.492 mA
61
iE1 = 3 0.492 = 2.508 mA
2.508
iB1 =
iB1 = 41.11 A
61
3
iE 2 3 mA iB 2 =
49.18 A
61
iI = iB 2 iB1 = 49.18 41.11 iI = 8.07 A
io =

Current gain
Ai =
VBE 3

30 103
Ai = 3.72 103
8.07 106
i
30 103
= VT ln E 3 = ( 0.026 ) ln
13
5 10
IS

VBE 3 = 0.6453 V
i
2.508 103
VEB1 = VT ln E1 = ( 0.026 ) ln

13
5 10

IS
VEB1 = 0.5807 V
vI = v0 + VBE 3 VEB1 = 6 + 0.6453 0.5807
vI = 6.0646 V
Voltage gain
v
6
Av = 0 =
Av = 0.989
vI 6.0646
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
8.43
1
i0 = 1 A, I B 3
20 mA
50
a.
For
10 ( v0,max + VBE 3 )

10 VEB1
= 2
20
R1
R1

We can then write

10 VBE 2vo ,max
=
+ 40
R1
R1
If, for simplicity, we assume VEB1 = VBE 3 = 0.7 V, then
9.3 2 ( 4 )
=
+ 40
R = R2 = 32.5
v
= 4 V,
R
R1
which yields 1
If we assume 0,max
then 1
9.3
I E1 =
I E1 = 0.286 A = I E 2
v
=
0,
32.5
I
b.
For

I = I E 4 = 2.86 A
I
= 10 I S 1,2 ,
Since S 3,4
then E 3
c.
We can write

r 1
r 3 + R1

1 + 1
1
R0 =

2
1 + 3

( 50 )( 0.026 )
V
Now r 3 = 3 T =
= 0.4545
IC3
2.86
r 1 =

1VT
I C1

(120 )( 0.026 )
0.286

= 10.91

So
10.91

0.4545 + 32.5
1
121
R0 =

2
51

10.91
32.5
= 32.5 0.0902 = 0.0900
121
1 0.4545 + 0.0900

or R 0 = 0.00534
51
2

______________________________________________________________________________________
Then R0 =

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
8.44
1
Ri = r 1 + (1 + ) R1 ( r 3 + (1 + ) 2 RL )

iC1 7.2 mA and iC 3 7.2 mA

Then r =

( 60 )( 0.026 )
7.2

= 0.217 k

1
0.217 + ( 61) 2 ( 0.217 + ( 61)( 0.2 ) )

2
1
= 0.217 + 61 2 12.4 or Ri = 52.6 k
2
______________________________________________________________________________________
So Ri =

8.45

I DQ

(b) For M n 3 ; GSn3 =

K n3

+ VTN =

5
+1 = 2 V
5

SGp1 = GSn 3 = 2 V
I DQ1 = 2(2 1) = 2 mA
2

R1 = R 2 =

(c) I DQ1 = I DQ 2

10 2
= 4 k
2
= 2 mA

(d) For o = 3.5 V, Assume M p 4 cutoff, so I DQ 4 = 0

I Dn3 = i o =

o
RL

3.5
= 23.33 mA
0.15

23.33
+ 1 = 3.160 V
5
10 ( o + GSn3 ) 10 (3.16 + 3.5)
= I R1 =
=
= 0.835 mA
R1
4

GSn 3 =
I Dp1

0.835
+ 1 = 1.646 V
2
I = o + GSn 3 SGp1 = 3.5 + 3.160 1.646 = 5.014 V

SGp1 =

I = GSn 2 + K n 2 R2 ( GSn2 VTN )2 + V

2
15.014 = GSn2 + 8 GSn
2 2 GSn 2 + 1

2
or 8 GSn
2 15 GSn 2 7.014 = 0 GSn 2 = 2.2625 V

I Dn 2 = 2(2.2625 1) = 3.188 mA
G 4 = I GSn 2 = 5.014 2.2625 = 2.75 V
SGp 4 = o G 4 = 3.5 2.75 = 0.75 V, M p 4 cutoff
2

PL =

o2

(3.5)2

= 81.7 mW
0.15
RL
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
8.46
For I = 1.5 V and O = 0 , SG 2 = 1.5 V = GS1
0.1 W
W
2
i D1 = i D 2 = 0.5 =
(1.5 0.8) = 20.4
2 L 1
L 1
0.04 W
W
2
0. 5 =
(1.5 0.8) = 51.0
2
L

2
L 2
0.04 W
W
2
(1.5 0.8) = 20.4
2 L 4
L 4

SG 4 = 1.5 V, 0.2 =

0.1 W
W
2
0. 2 =
(1.5 0.8) = 8.16
2 L 3
L 3
______________________________________________________________________________________

8.47

For v0 = 0
I Q = I C 3 + I C 2 + I E1
1 + n
I B3 = I E 2 =
n
I C 3 = (1 + n ) I C 2

IC 3
IC 2 =
n

I B 2 = I C1 = P
1+ P

IC 2
I E1 =
n

IC 2 = n P
1+ P

I E1

I C 3 = (1 + n ) n P
1+
p

I E1

I Q = (1 + n ) n P I E1 + n P I E1 + I E1
1+ P
1+ P
10
10
= ( 51)( 50 ) I E1 + ( 50 ) I E1 + I E1
11
11
I Q = 2318.18I E1 + 45.45 I E1 + I E1
I E1 = 1.692 A I C1 = 1.534 A
10
I C 2 = ( 50 ) (1.692 ) I C 2 = 76.9 A
11
10
I C 3 = ( 51)( 50 ) (1.692 ) I C 3 = 3.92 mA
11

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
Because of r 1 and Z, neglect effect of r . Then neglecting r , r and r , we find
0

01

02

03

VX
I X = g m 3V 3 + g m 2V 2 + g m1V 1 +
r 1 + Z
Now
r

V 1 = 1 VX , V 2 g m1V 1r 2
r 1 + Z
and
V 3 = ( g m1V 1 + g m 2V 2 ) r 3

= g m1V 1 + g m 2 ( g m1V 1r 2 ) r 3

V 3 = 1 [ g m1 + g m1 g m 2 r 2 ] r 3 VX
r 1 + Z
( + 1 2 ) r 3
VX
V 3 = 1
r 1 + Z
r

r
and V 2 = g m1 1 r 2VX = 1 2 VX
r 1 + Z
r 1 + Z
( + 1 2 ) 3
VX

1
V X + 1 2 VX +
VX +
Then I X = 1
r 1 + Z
r 1 + Z
r 1 + Z
r 1 + Z
Then
R0 =

r 1 + Z
VX
=
I X 1 + 1 + 1 2 + ( 1 + 1 2 ) 3

(10 )( 0.026 )

r 1 =

1.534
Z = 25 k

= 0.169 M

Then
R0 =

169 + 25
1 + (10 ) + (10 )( 50 ) + 10 + (10 )( 50 ) ( 50 )

194
= 0.00746 k or Ro = 7.46
26, 011
______________________________________________________________________________________
R0 =

8.48
a

Neglect base currents.

I
VBB = 2VD = 2VT ln Bias
IS
5 103
= 2 ( 0.026 ) ln
VBB = 1.281 V
13
10

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
VBE1 + VEB 3 = VBB
I E1 = I E 3 + I C 2

I B 2 = IC 3 = P I E 3
1+ P

IC 2 = n I B 2 = n P I E 3
1+ P
P
I E1 = I E 3 + n
1+ P

IE3

P
I E1 = I E 3 1 + n
1+ P

1+ n
1+ P
P

I C1 =
I C 3 1 + n
P
1+ P
n

I
I
VBE1 = VT ln C1 , VEB 3 = VT ln C 3
IS
IS

(1.01) IC1 =

21
IC 3
20

I C1

20
1 + (100 ) 21

21

= I C 3 + 100 = 101.05 I C 3
20

= 100.05 I C 3

100.05I C 3
IC 3
VT ln
+ VT ln
IS

IS
2
100.05I C 3
VT ln
= VBB
I S2

2
V
100.05 I C 3
= exp BB
2
IS
VT

= VBB

V
exp BB = 0.4995 mA = I C3
100.05
VT
Then I E 3 = 0.5245 mA
IC 3 =

IS

Now I C1 = 100.05I C 3 = 49.97 mA = I C1

20
I C 2 = (100 ) ( 0.5245 ) = 49.95 mA = I C 2
21
I
49.97 103
VBE1 = VT ln C1 = 0.026 ln

13
10

IS
= 0.70037
I
0.4995 103
VEB 3 = VT ln C 3 = 0.026 ln

1013

IS
= 0.58062
Note: VBE1 + VEB 3 = 0.70037 + 0.58062 = 1.28099
= VBB

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
b.
10
v0 = 10 V iE1
= 0.10 A = iC1
100
100
iB1 =
= 1 mA
100
4 103
VBB = 2 ( 0.026 ) ln
= 1.2694 V
13
10

0.1
VBE1 = ( 0.026 ) ln 13 = 0.7184
10
VEB 3 = 1.2694 0.7184 = 0.55099 V
0.55099
I C 3 = 1013 exp
= 0.1598 mA
0.026
V02 (10 )
=
PL = 1 W
RL
100
2

PL =

PQ1 = iC1 vCE1 = ( 0.1)(12 10 ) PQ1 = 0.2 W

PQ 3 = iC 3 vEC 3 = ( 0.1598 ) (10 [ 0.7 12]) PQ 3 = 3.40 mW
iC 2 = (100 )( iC 3 ) = (100 )( 0.1598 ) = 15.98 mA
PQ 2 = iC 2 vCE 2 = (15.98) (10 [ 12]) PQ 2 = 0.352 W
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
8.49
a.
10 103
VBB = 3 ( 0.026 ) ln
VBB = 1.74195 V
12
2 10
VBE1 + VBE 2 + VEB 3 = VBB
I C1

IC 2

, IC 3

IC 2

n2

I
I
I
VT ln C1 + VT ln C 2 + VT ln C 3 = VBB
IS
IS
IS
I3
VT ln 3C 2 3 = VBB
n IS
V
I C 2 = n I S 3 exp BB
VT
1.74195
= ( 20 ) ( 20 1012 ) 3 exp

0.026
I C 2 = 0.20 A, I C1 10 mA, I C 3 0.5 mA
10 103
VBE1 = ( 0.026 ) ln
VBE1 = 0.58065 V
12
2 10
0.2
VBE 2 = ( 0.026 ) ln
VBE 2 = 0.6585 V
12
2 10
0.5 103
VEB 3 = ( 0.026 ) ln
VEB 3 = 0.50276 V
12
2 10

b.
1 V2 1 V2
PL = 10 W= 0 = 0 V0 ( max ) = 20 V
2 RL 2 20

For

v0 ( max )

PL =

( 20 )
v
=
PL = 20 W
20
RL
2
0

20
= 1 A
20
iC 5 + iC 4 + iE 3 = io ( max ) = 1 A
i0 ( max ) =

1+ p

iC 5 +

iC 5 n iC 4

+
n 1+ n n

iC 5 +

iC 5 n iC 5 n

n 1+ n n 1+ n

= 1

1+ p

1 20 1 1 6
iC 5 1 + + = 1
20
21 21 20 5

= 1

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 8
By D. A. Neamen
Problem Solutions
______________________________________________________________________________________
iC 5 (1.05048) = 1 iC 5 = 0.952 A
iC 4 = 0.0453 A
iE 3 = 0.00272 A
5
iC 3 = 0.00272
6
= 0.002267 A
2.267 10 3
VEB 3 = ( 0.026 ) ln
= 0.54206 V
12
2 10

VBE1 + VBE 2 = 1.74195 0.54206 = 1.19989

I
I
VT ln C 2 + VT ln C 2 = 1.19989
n IS
IS

1.19989
iC 2 = n I S exp

0.026
= 20 (18.83) mA
iC 2 = 93.9 mA
iC 2 n 93.9
= 4.47 mA

=
n 1 + n 21
= I C 2 ( 24 ( 20 ) ) = ( 0.0939 ) ( 44 ) = 4.13 W

iC1 =
PQ 2

PQ 5 = ( 0.952 ) ( 10 ( 24 ) ) = 13.3 W

______________________________________________________________________________________