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IMPATT Diode: (Impact Ionization Avalanche Transit Time)
IMPATT Diode: (Impact Ionization Avalanche Transit Time)
Pravin Prajapati
V
400 KV
DC applied
+ RF
voltage
Avalanche
threshold
90 90
I
Current
pulse
Current pulse
At cathode when V = -max
t
Current pulse drifts to
cathode
V and I vs at t characteristics.
Operations
The junction being between the p+ and n layers.
An high voltage gradient is applied to the impatt
diode eventually resulting in a very high current.
Such a high potential gradient back biasing the
Diode causes a flow of minority carriers across the
Junction.
Let us consider application of a RF ac voltage
superimposed on top of the high dc voltage.
Increased velocity of electrons and holes result in
additional electrons and holes by knocking them
out of of the crystal structure by so called impact
ionization.
Performance characteristics
Theoritical n = 30% and
15% for Si
23% for GaAs
Freq :- 1 to 300 GHz
Noise generator
source
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