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  • CMOS Inverter Processing Steps

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    This document describes the fabrication process for a CMOS inverter. It involves 47 process steps including growing oxide layers, depositing polysilicon, and implanting dopants to form the nMOS and pMOS transistors on a p-type silicon substrate. Key steps include defining the n-well and active areas using photolithography masks, depositing and patterning polysilicon for the gates, and implanting n-type and p-type dopants to form the source/drain regions. Metallization is completed by depositing and patterning aluminum layers to form connections.

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    overview of inverter tech

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    This document describes the fabrication process for a CMOS inverter. It involves 47 process steps including growing oxide layers, depositing polysilicon, and implanting dopants to form the nMOS and pMOS transistors on a p-type silicon substrate. Key steps include defining the n-well and active areas using photolithography masks, depositing and patterning polysilicon for the gates, and implanting n-type and p-type dopants to form the source/drain regions. Metallization is completed by depositing and patterning aluminum layers to form connections.

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    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
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    19 views15 pages

    CMOS Inverter Processing Steps

    Uploaded by

    sakibsultan_308
    This document describes the fabrication process for a CMOS inverter. It involves 47 process steps including growing oxide layers, depositing polysilicon, and implanting dopants to form the nMOS and pMOS transistors on a p-type silicon substrate. Key steps include defining the n-well and active areas using photolithography masks, depositing and patterning polysilicon for the gates, and implanting n-type and p-type dopants to form the source/drain regions. Metallization is completed by depositing and patterning aluminum layers to form connections.

    Copyright:

    © All Rights Reserved
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    of 15

    CMOS Processing Technology

    for VLSI Systems

    Part 2
    Fabrication of an Inverter

    Inverter Layout

    GND

    VDD
    substrate contact

    nMOS transistor

    pMOS transistor

    Part 2 Fabrication of a CMOS Inverter

    well tap

    GND

    VDD
    nMOS transistor

    pMOS transistor

    p substrate

    Part 2 Fabrication of a CMOS Inverter

    Process Steps
    1. SUBSTRATE SILICON TYPE=P IMPU=1E13
    2. OXIDATION GROW OXIDE
    3. SPINCOAT PHOTORESIST

    p substrate

    Part 2 Fabrication of a CMOS Inverter

    N-Well Definition
    4. MASK 1 - NWELL

    p substrate

    Part 2 Fabrication of a CMOS Inverter

    N-Well Definition
    5. DEVELOP PHOTORESIST
    6. ETCH OXIDE
    7. STRIP PHOTORESIST

    p substrate

    Part 2 Fabrication of a CMOS Inverter

    N-Well Formation
    8. IMPLANT PHOSPHOROUS
    9. DIFFUSION DRIVE
    10. ETCH OXIDE

    p substrate

    Part 2 Fabrication of a CMOS Inverter

    Active Area Definition


    11.
    12.
    13.
    14.

    GROW OXIDE (OXIDATION)


    DEPOSIT SILICON NITRIDE (CVD)
    SPIN COAT PHOTORESIST
    MASK 2 - ACTIVE AREA

    p substrate

    Part 2 Fabrication of a CMOS Inverter

    Active Area Definition


    15.
    16.
    17.
    18.
    19.

    DEVELOP PHOTORESIST
    ETCH SILICON NITRIDE
    STRIP PHOTORESIST
    GROW OXIDE
    ETCH REMAINING SILICON NITRIDE

    p substrate

    Part 2 Fabrication of a CMOS Inverter

    Polysilicon Definition
    20.
    21.
    22.
    23.
    24.
    25.

    DEPOSIT POLYSILICON (CVD)


    SPIN COAT PHOTORESIST
    MASK 3 - POLYSILICON
    ETCH EXPOSED PHOTORESIST
    ETCH POLYSILICON
    STRIP PHOTORESIST

    p substrate

    Part 2 Fabrication of a CMOS Inverter

    n+ Diffusion
    26.
    27.
    28.
    29.

    SPIN COAT PHOTORESIST


    MASK 4 - N+ SELECT
    DEVELOP PHOTORESIST
    IMPLANT ARSENIC

    p substrate

    Part 2 Fabrication of a CMOS Inverter

    p+ Diffusion
    30.
    31.
    32.
    33.
    34.
    35.

    STRIP PHOTORESIST
    SPIN COAT PHOTORESIST
    MASK 5 - P+ SELECT
    DEVELOP PHOTORESIST
    IMPLANT BORON
    STRIP PHOTORESIST

    p substrate

    Part 2 Fabrication of a CMOS Inverter

    Contacts
    36.
    37.
    38.
    39.
    40.
    41.

    DEPOSIT OXIDE (CVD)


    SPIN COAT PHOTORESIST
    MASK 6 - CONTACT
    DEVELOP PHOTORESIST
    ETCH OXIDE
    STRIP PHOTORESIST

    p substrate

    Part 2 Fabrication of a CMOS Inverter

    Metalization
    42.
    43.
    44.
    45.
    46.
    47.

    DEPOSIT ALUMINUM (PVD BY SPUTTERING)


    SPIN COAT PHOTORESIST
    MASK 7 - METAL1
    DEVELOP PHOTORESIST
    ETCH ALUMINUM
    STRIP PHOTORESIST

    p substrate

    Part 2 Fabrication of a CMOS Inverter

    GND

    VDD
    nMOS transistor

    pMOS transistor

    p substrate

    Part 2 Fabrication of a CMOS Inverter

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