BPW77N

Vishay Semiconductors

Silicon NPN Phototransistor

Description
BPW77N is a very high sensitive silicon NPN epitaxial
planar phototransistor in a standard TO-18 hermetically sealed metal case.
Its glass lens featuring a viewing angle of 10
makes it insensible to ambient straylight.
A base terminal is available to enable biasing and
sensitivity control.

94 8401

Features
Hermetically sealed case

Lens window
Narrow viewing angle = 10
Exact central chip alignment
Base terminal available
High photo sensitivity
Suitable for visible and near infrared radiation
Selected into sensitivity groups
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Applications
Detector in electronic control and drive circuits

Absolute Maximum Ratings

Tamb = 25 C, unless otherwise specified
Symbol

Value

Unit

Collector Base Voltage

Parameter

Test condition

VCBO

80

Collector Emitter Voltage

VCEO

70

Emitter Base Voltage

VEBO

V
mA

Collector current

IC

50

Collector peak current

tp/T = 0.5, tp 10 ms

ICM

100

mA

Total Power Dissipation

Tamb 25 C

Ptot

250

mW

Junction Temperature

Tj

125

Tstg

- 55 to + 125

Tsd

260

Thermal Resistance Junction/

Ambient

RthJA

400

K/W

Thermal Resistance Junction/

Case

RthJC

150

K/W

Storage Temperature Range

Soldering Temperature

Document Number 81527

Rev. 1.4, 08-Mar-05

t5s

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BPW77N
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Parameter

Test condition

Collector Emitter Breakdown

Voltage

IC = 1 mA

Symbol

Min

V(BR)CEO

70

Typ.

Max

Unit
V

Collector-emitter dark current

VCE = 20 V, E = 0

ICEO

Collector-emitter capacitance

VCE = 5 V, f = 1 MHz, E = 0

CCEO

100

nA
pF

Optical Characteristics
Tamb = 25 C, unless otherwise specified
Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Angle of Half Sensitivity

10

deg

Wavelength of Peak Sensitivity

850

nm

0.5

620 to 980

VCEsat

0.15

VS = 5 V, IC = 5 mA, RL = 100

ton

VS = 5 V, IC = 5 mA, RL = 100

toff

VS = 5 V, IC = 5 mA, RL = 100

fc

110

kHz

Range of Spectral Bandwidth

Collector Emitter Saturation
Voltage

Ee = 1
IC = 1 mA

Turn-On Time
Turn-Off Time
Cut-Off Frequency

mW/cm2,

= 950 nm,

nm
0.3

Type Dedicated Characteristics

Parameter

Test condition
Ee = 1 mW/cm2, = 950 nm,
VCE = 5 V

Collector Light Current

Part

Symbol

Min

Typ.

Max

Unit

BPW77NA

Ica

7.5

10

15

mA

BPW77NB

Ica

10

20

mA

800

I CEO - Collector Dark Current ( nA )

Ptot Total Power Dissipation ( mW )

Typical Characteristics (Tamb = 25 C unless otherwise specified)

600
RthJC

400

200
RthJA
0
0

94 8342

25

50

75

100

125

150

Tamb Ambient Temperature ( C )

Figure 1. Total Power Dissipation vs. Ambient Temperature

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2

10 6
10 5
10 4
10 3
10 2
V CE = 20V
E=0

10 1
10 0
20

94 8343

50

150

100

Tamb - Ambient Temperature ( C )

Figure 2. Collector Dark Current vs. Ambient Temperature

Document Number 81527

Rev. 1.4, 08-Mar-05

BPW77N
C CEO Collector Emitter Capacitance ( pF )

Vishay Semiconductors

I ca rel - Relative Collector Current

2.50
VCE = 5 V
E e = 1 mW/cm 2
= 950 nm

2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
0

BPW77NB
10

BPW77NA

0.1
V CE = 5 V
= 950 nm

0
0.1

100

10

V CE Collector Emitter Voltage ( V )

Figure 6. Collector Emitter Capacitance vs. Collector Emitter

Voltage

0.1

12
V CE=5V
RL=100
=950nm

10
8
6

ton

toff

10

Ee Irradiance ( mW/cm2 )

= 950 nm

Ee=1mW/cm2
0.5 mW/cm2
0.2 mW/cm2

0.1 mW/cm2
0.05 mW/cm2

0.02 mW/cm2
0.1
0.1

10

Figure 5. Collector Light Current vs. Collector Emitter Voltage

Document Number 81527

Rev. 1.4, 08-Mar-05

12

16

1.0
0.8
0.6
0.4
0.2
0
400

100

V CE Collector Emitter Voltage ( V )

Figure 7. Turn On/Turn Off Time vs. Collector Current

S ( )rel Relative Spectral Sensitivity

10

I C Collector Current ( mA )

94 8253

Figure 4. Collector Light Current vs. Irradiance

Ica Collector Light Current ( mA)

0.01
0.01

94 8350

ton / toff Turn on / Turn off Time ( s )

Ica Collector Light Current ( mA)

100

94 8349

12

94 8247

Figure 3. Relative Collector Current vs. Ambient Temperature

f=1MHz

16

10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature ( C )

948344

20

94 8348

600

800

1000

Wavelength ( nm )

Figure 8. Relative Spectral Sensitivity vs. Wavelength

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BPW77N
Vishay Semiconductors
0

10

Figure 9. Relative Radiant Sensitivity vs. Angular Displacement

20

Srel - Relative Sensitivity

30

40
1.0
0.9

50

0.8

60
70

0.7

80
0.6

0.4

0.2

0.2

0.4

0.6

94 8351

Package Dimensions in mm

96 12180

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Document Number 81527

Rev. 1.4, 08-Mar-05

BPW77N
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 81527

Rev. 1.4, 08-Mar-05

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