1. Consider a piece of Si.

This sample is at

600K and

has

NA=1014cm3 and ND=1015cm3. Note that at 600K, Si has an intrinsic

carrier concentration ni=41015cm3. What are n and p?
Here I used the formula
n= ni exp (Ef-Ei)/KT, p= ni exp (Ei-Ef)/KT
where Ef-Ei= KT ln (Nd/ni) and Ei-Ef= KT ln (Na/ni).
But I am not able to get the required answer. Can u solve this once and tell
me your answer.
2. Now consider a piece of GaAs at room temperature. Suppose that the
concentration of electrons in n-type GaAs decreases linearly
from

51016cm3 to approximately zero over a distance of 2mm. The

mobility of electrons in GaAs is given as 8500 cm2/Vs. Calculate the
diffusion current density.
Here I used the formula, Jn= qDndn/dx
3. Estimate what electric field would be needed to produce a drift current of the
same magnitude. In your calculation, please take n to be the average value
of the electron density in the sample.
Here I used the formula, Jn=nqnE