BRAC University

ECE230 & EEE209 (Semiconductor Materials and Devices)

Summer 2020
Assignment 2
1. Consider a sample of silicon at T = 300 K doped at an impurity
concentration of: Nd= 1015 cm-3. Assume electron and hole mobilities are
1350 and 480 cm2/V.s, respectively. Calculate the conductivity of the
silicon. If an electric field is E = 35 V/cm is applied, calculate the drift
current density.
2. Consider a compensated GaAs semiconductor at T = 300 K. Nd= 5×1015
cm-3 and Na = 2×1016 cm-3. Calculate the conductivity of the
semiconductor. If an electric field is E = 100 V/cm is applied, calculate
the drift current density. Assume electron and hole mobilities are 1350
and 480 cm2/V.s, respectively.
3. It is required to have an n-type semiconductor with resistivity 0.1 ohm-
cm. Find the doping density needed to achieve this resistivity. If the
semiconductor has a dimension of 1μm × 2μm × 10μm, calculate the
resistance of the material.
4. A 0.1 cm long bar of Silicon has electron concentration of 1016 cm-3 at one
end and 8×1015 cm-3 at the other end. Calculate the diffusion current
density if the electron density varies linearly through the bar. Assume
electron mobility 1350 cm2/V.s and T = 300 K.
5. Consider a semiconductor that is non-uniformly doped with acceptor
impurity atoms as shown in the figure below. If the semiconductor is in
thermal equilibrium, draw the energy band diagram showing the
intrinsic and the Fermi energy levels through the crystal. Derive an
expression for the induced electric field and show its direction in the
diagram.
6. An intrinsic Si sample is doped with donors from one side such that Nd =
N0 exp(-ax). (i) Find an expression for E(x) at equilibrium over the range
for which Nd >> ni. (ii) Evaluate E when a = 1 (μm)-1. (iii) Sketch a band
diagram showing the intrinsic and the Fermi energy levels through the
crystal and indicate the direction of E.