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N-Channel Powertrench Mosfet 30V, 58A, 9M: April 2008
N-Channel Powertrench Mosfet 30V, 58A, 9M: April 2008
N
April 2008
FDD8880
tm
Features
Applications
DC/DC converters
RoHS Compliant
D
G
G
D-PAK
TO-252
(TO-252)
Parameter
Ratings
30
Units
V
VGS
20
58
51
13
Drain Current
ID
Pulsed
EAS
PD
TJ, TSTG
Figure 4
53
mJ
55
0.37
W/oC
-55 to 175
oC
Thermal Characteristics
RJC
2.73
C/W
RJA
100
C/W
RJA
52
oC/W
Device
FDD8880
Package
TO-252AA
Reel Size
13
Tape Width
12mm
Quantity
2500 units
FDD8880 Rev. B3
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
IGSS
ID = 250A, VGS = 0V
VDS = 24V
VGS = 0V
TC = 150oC
VGS = 20V
30
250
100
nA
On Characteristics
VGS(TH)
rDS(ON)
1.2
2.5
0.007
0.009
0.009
0.012
0.013
0.015
1260
260
pF
150
pF
Dynamic Characteristics
pF
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
RG
Gate Resistance
2.3
Qg(TOT)
VGS = 0V to 10V
23
31
nC
Qg(5)
VGS = 0V to 5V
Qg(TH)
VGS = 0V to 1V
Qgs
Qgs2
Qgd
Switching Characteristics
VDD = 15V
ID = 35A
Ig = 1.0mA
13
17
nC
1.3
1.7
nC
3.8
nC
2.5
nC
5.0
nC
(VGS = 10V)
tON
Turn-On Time
147
ns
td(ON)
ns
tr
Rise Time
td(OFF)
tf
tOFF
91
ns
38
ns
Fall Time
32
ns
Turn-Off Time
108
ns
ISD = 35A
1.25
ISD = 15A
1.0
trr
27
ns
QRR
14
nC
Notes:
1: Package current limitation is 35A.
2: Starting TJ = 25C, L = 0.14mH, IAS = 28A, VDD = 27V, VGS = 10V.
3
FDD8880 Rev. B3
FDD8880
FDD8880
60
1.0
50
ID, DRAIN CURRENT (A)
CURRENT LIMITED
BY PACKAGE
0.8
0.6
0.4
40
VGS = 10V
30
VGS = 4.5V
20
10
0.2
0
0
25
50
75
100
150
125
25
175
50
75
100
125
150
175
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
ZJC, NORMALIZED
THERMAL IMPEDANCE
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC x RJC + TC
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
100
101
TC = 25oC
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
VGS = 10V
CURRENT AS FOLLOWS:
175 - TC
I = I25
VGS = 4.5V
150
100
30
10-5
10-4
10-3
10-2
10-1
100
101
FDD8880 Rev. B3
FDD8880
1000
10s
100
100s
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1ms
1
10ms
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
DC
1
0.01
0.1
1
60
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
80
VGS = 5V
ID, DRAIN CURRENT (A)
40
TJ = 25oC
20
TJ = 175oC
60
VGS = 4V
VGS = 10V
40
VGS = 3V
20
TC = 25oC
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
TJ = -55oC
0
0
1.5
2.0
2.5
3.0
3.5
VGS , GATE TO SOURCE VOLTAGE (V)
4.0
0.25
0.5
0.75
1.0
25
1.8
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
ID = 35A
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (m)
10
0.1
1
tAV, TIME IN AVALANCHE (ms)
20
15
ID = 1A
10
1.4
1.2
1.0
0.8
VGS = 10V, ID = 35A
5
2
10
0.6
-80
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE (oC)
160
200
FDD8880 Rev. B3
FDD8880
1.2
ID = 250A
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.0
0.8
0.6
0.4
-80
-40
40
80
120
160
1.05
1.00
0.95
0.90
-80
200
-40
40
80
120
160
200
2000
VGS , GATE TO SOURCE VOLTAGE (V)
VDD = 15V
CISS = CGS + CGD
C, CAPACITANCE (pF)
1000
CRSS = CGD
4
WAVEFORMS IN
DESCENDING ORDER:
ID = 35A
ID = 1A
0
1
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
30
10
15
Qg, GATE CHARGE (nC)
20
25
FDD8880 Rev. B3
FDD8880
VDS
VARY tP TO OBTAIN
IAS
RG
VDD
VDD
-
VGS
DUT
tP
IAS
0V
0.01
tAV
VDS
VDD
Qg(TOT)
VDS
VGS
VGS = 10V
VGS
Qg(5)
Qgs2
VDD
VGS = 5V
DUT
VGS = 1V
Ig(REF)
0
Qg(TH)
Qgs
Qgd
Ig(REF)
0
VDS
tON
tOFF
td(ON)
td(OFF)
RL
tr
VDS
tf
90%
90%
VGS
VDD
-
10%
10%
DUT
90%
RGS
VGS
VGS
50%
10%
50%
PULSE WIDTH
FDD8880 Rev. B3
FDD8880
( T JM TA )
P DM = ----------------------------R JA
(EQ. 1)
125
RJA = 33.32+ 23.84/(0.268+Area) EQ.2
RJA = 33.32+ 154/(1.73+Area) EQ.3
100
RJA (oC/W)
75
50
25
0.01
(0.0645)
0.1
(0.645)
1
(6.45)
10
(64.5)
23.84
( 0.268 + Area )
R JA = 33.32 + -------------------------------------
(EQ. 2)
Area in Inches Squared
154
( 1.73 + Area )
R JA = 33.32 + ----------------------------------
(EQ. 3)
Area in Centimeters Squared
FDD8880 Rev. B3
LDRAIN
DPLCAP
DRAIN
2
10
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
5
51
ESLC
EVTHRES
+ 19 8
+
LGATE
GATE
1
11
+
17
EBREAK 18
-
50
RDRAIN
6
8
ESG
DBREAK
RSLC2
Ebreak 11 7 17 18 33.15
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
RLDRAIN
RSLC1
51
EVTEMP
RGATE + 18 22
9
20
21
16
DBODY
MWEAK
MMED
MSTRO
RLGATE
Lgate 1 9 5.3e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 1.7e-9
LSOURCE
CIN
SOURCE
3
RSOURCE
RLSOURCE
RLgate 1 9 53
RLdrain 2 5 10
RLsource 3 7 17
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
S1A
12
S2A
13
8
14
13
S1B
CA
15
17
18
RVTEMP
S2B
13
CB
19
6
8
VBAT
5
8
EDS
IT
14
+
EGS
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 3.2e-3
Rgate 9 20 2.2
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 3.2e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
RBREAK
+
8
22
RVTHRES
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*170),5))}
.MODEL DbodyMOD D (IS=2E-12 IKF=10 N=1.01 RS=3.76e-3 TRS1=8e-4 TRS2=2e-7
+ CJO=4.8e-10 M=0.55 TT=1e-17 XTI=2)
.MODEL DbreakMOD D (RS=0.2 TRS1=1e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=5.5e-10 IS=1e-30 N=10 M=0.45)
.MODEL MmedMOD NMOS (VTO=2.0 KP=10 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.2)
.MODEL MstroMOD NMOS (VTO=2.5 KP=170 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=1.69 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=22 RS=0.1)
.MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-8e-7)
.MODEL RdrainMOD RES (TC1=1.8e-3 TC2=8e-6)
.MODEL RSLCMOD RES (TC1=9e-4 TC2=1e-6)
.MODEL RsourceMOD RES (TC1=5e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-1e-3 TC2=-8.2e-6)
.MODEL RvtempMOD RES (TC1=-2.6e-3 TC2=2e-7)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.3 VOFF=-0.8)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.8 VOFF=-1.3)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
FDD8880 Rev. B3
FDD8880
FDD8880
RDRAIN
6
8
ESG
EVTHRES
+ 19 8
+
LGATE
DBREAK
50
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
EVTEMP
RGATE +
18 22
9
20
21
11
DBODY
16
MWEAK
EBREAK
+
17
18
-
MMED
MSTRO
RLGATE
CIN
DRAIN
2
LSOURCE
7
SOURCE
3
RSOURCE
RLSOURCE
i.it n8 n17 = 1
S1A
12
l.lgate n1 n9 = 5.3e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 1.7e-9
S2A
14
13
13
8
S1B
CA
res.rlgate n1 n9 = 53
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 17
RBREAK
15
17
18
RVTEMP
S2B
13
CB
6
8
EGS
-
19
IT
14
VBAT
5
8
EDS
-
+
8
22
RVTHRES
FDD8880 Rev. B3
th
FDD8880
JUNCTION
RTHERM1
CTHERM1
RTHERM1 TH 6 1.44e-1
RTHERM2 6 5 1.9e-1
RTHERM3 5 4 3.0e-1
RTHERM4 4 3 4.0e-1
RTHERM5 3 2 5.7e-1
RTHERM6 2 TL 5.8e-1
RTHERM2
CTHERM2
RTHERM3
CTHERM3
RTHERM4
CTHERM4
RTHERM5
CTHERM5
CTHERM6
RTHERM6
tl
CASE
FDD8880 Rev. B3
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Green FPS e-Series
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FACT
FAST
FastvCore
FlashWriter *
PDP-SPM
Power-SPM
PowerTrench
Programmable Active Droop
QFET
QS
Quiet Series
RapidConfigure
Saving our world 1mW at a time
SmartMax
SMART START
SPM
STEALTH
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
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TINYOPTO
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TinyPWM
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As used herein:
1.
2.
Product Status
Definition
Advance Information
Formative or In Design
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
Obsolete
Not In Production
FDD8880 Rev. B3