3-stage Ring Oscillator.

1. Transconductance parameter of n-channel for Tsmc180 nm is 171.0 uA/V^2

2. Transconductance parameter of n-channel for Tsmc180 nm is 37.0 uA/V^2

Ring oscillator:
Ring oscillator is an electronic device where odd number of inverters are connected
in cascade manner and whose output varies or oscillates over two voltage levels
representing true or false.
The frequency of oscillation is given by the formula
Fosc =1/n(tPHL + tPLH )

Where n= number of stages.

TPHL = propagation delay of a signal from High to low.
TPLH= Propagation delay of a signal from low to High.
There are capacitances which are parasitics in the MOSFETS.
So the total capacitance of one inverter Ctot= cin +cout
Cin = 3/2(WnLn+ WpLp)Cox
Cout= WnLn+WpLp)Cox
Ctot=5/2(WnLn+WpLp)Cox .
Where,
Cox is the capacitance of oxide
Wn,Ln are the width and length of nmos Respectively
Wp,Lp are the width and length of pmos respectively.
The propagation delay for the inverter is given as
Tphl+Tplh=Rn+Rp(Ctot).
Where,
Rn is the resistance of the n-channel
Rp is the resistance of the p-channel.
The following is the hardware structure of the CMOS inverter based 3-stage Ring
oscillator.