Ion Implantation

C(x)

as-implant
profile
mask
Si
x
x

* Concentration Profile is a single-peak function

of depth
Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

Advantages of Ion Implantation

Precise control of dose and depth profile
Low-temp. process (can use photoresist as mask)
Wide selection of masking materials
e.g. photoresist, oxide, poly-Si, metal

Less sensitive to surface cleaning procedures

Excellent lateral dose uniformity (< 1% variation across 8 wafer)
Application example: formation of self-aligned source/drain regions
As+

As+

As+

Poly Si Gate

n+

n+

SiO2

p-Si
Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

Monte Carlo Simulation of 50keV Boron implanted into Si

5000
ions
simulation
Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

(1) Range and profile shape depends on the ion energy

(for a particular ion/substrate combination)
(2) Height (i.e. Concentration) of profile depends on
the implantation dose
[Conc] = # of atoms/cm3
C(x) in #/cm3
[dose] = # of atoms/cm2
dose =

C
0

( x )dx

Depth x in cm
Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

(3) Mask layer thickness can block ion penetration

photoresist
SiO2 ,
Thick
Si3N4 ,
Mask
or others

Complete
blocking

Professor Nathan Cheung, U.C. Berkeley

Thin mask

SUBSTRATE

Incomplete
Blocking

EECS143 Lecture #7

Ion Implanter
$3-4M/implanter
e.g. AsH3
As+, AsH+, H+, AsH2+

Magnetic
Mass seperation

Ion
source
As+

wafer

~60 wafers/hour
Accelerator Voltage: 1-200kV
Dose ~ 1011-1016/cm2
Accuracy of dose: <0.5%
Uniformity<1% for 8 wafer
Accelerator
Column

ion beam (stationary)

Translational
wafer holder
motion.

Professor Nathan Cheung, U.C. Berkeley

spinning
wafer
holder
EECS143 Lecture #7

Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

Photograph
of the Eaton HE3
High Energy
Implanter,
showing the
ion beam
hitting the
300mm wafer
end-station

Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

Implantation Dose

Ion Beam Current in amps Implant

q
time

=
[Implant area ]
= #
cm 2

Overscanning of beam across wafer is common.

In general , Implant area > Wafer area
Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

Practical Implantation Dosimetry

ion+

Secondary
electron
effect
eliminated

Faraday
cup

+V
A

+ bias applied to
Faraday Cup to collect
all secondary electrons.
Cup current = Ion current

* Charge collected by integrating cup current / cup area = dose

Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

Meaning of Dose and Concentration

Dose [#/area] : looking downward, how many fish
per unit area for ALL depths

Concentration [#/volume] :
Looking at a particular location,
how many fish per unit volume

Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

Ion Implantation Energy Loss Mechanisms

Si

Nuclear
stopping

Si
+

Crystalline Si substrate damaged by collision

e
Electronic
stopping

Si

e
+

Electronic excitation creates heat

Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

Energy Loss and Ion Properties

Light ions/at higher energy

more electronic stopping

Heavier ions/at lower energy

more nuclear stopping

EXAMPLES
Implanting into Si:

H+

Electronic stopping
dominates

B+

Electronic stopping
dominates

As+

Nuclear stopping
dominates

Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

Stopping Mechanisms

B into Si
P into Si
As into Si

E1(keV)
3
17
73

E2(keV)
17
140
800

Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

Sn dE/dx|n
Se dE/dx|e

Depth x

Surface

E~0

E=Eo

Substrate

A+

Se

Se
Sn

Sn

Eo =
incident
kinetic
energy

x ~ Rp
More crystalline
damage at
end of range
S n > Se
Professor Nathan Cheung, U.C. Berkeley

Less crystalline
damage
Se > Sn
EECS143 Lecture #7

Implantation Damage

After implantation, we need an annealing step.

~900oC, 30min to
(1) Restore Si crystallinity.
(2) Put dopants into Si substitutional sites
for electrical activation
Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

Gaussian Approximation of Implant Profile

C(x)

Choose Gaussian function

as approximation

Cp

linear scale

0.61 Cp

Rp
x=0

Rp

( )2
2 (R p )2

xRp

C ( x ) = Cp e
R p = projected range
R p = longitudinal straggle
Professor Nathan Cheung, U.C. Berkeley

log scale

x
EECS143 Lecture #7

Projected Range and Straggle

Rp and Rp values are given in tables or charts
e.g. see pp. 93-94 of Jaeger

Note: this means 0.02 m.

Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

Rp and Rp values from Monte Carlo simulation

[see 143 Reader for other ions]
Rp =51.051+32.60883 E -0.03837 E2 +3.758e-5 E3 -1.433e-8 E4

Projected Range & Straggle in Angstrom

Rp =185.34201 +6.5308 E -0.01745 E2 +2.098e-5 E3 -8.884e-9 E4

B1 1 into Si

10000

Rp

1000

Rp

100

10

100

1000

Ion Energy E in keV

(both theoretical & expt values are well known for Si substrate)
Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

Dose-Concentration Relationship
Using Gaussian Approximation:

Dose =

Cp

= C( x)dx
0

Gaussian

C( x)dx

= C p 2 Rp

negligible

0.4
Cp =

2Rp Rp
Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7

Definitions of Profile Parameters

(1) Dose =

C( x )dx

1
(2) Projected Range: R p 0 x C ( x )dx

1
2
2
(3) Longitudinal Straggle: (R p ) (x R p ) C ( x )dx
0
3
1
(
)
(4) Skewness: M 3 0 x Rp C (x )dx, M 3 > 0 or < 0

-describes asymmetry between left side and right side

(5) Kurtosis: (x R p )4 C (x )dx C(x)

0

Kurtosis characterizes the

contributions of the tail
regions
Rp
Professor Nathan Cheung, U.C. Berkeley

x
EECS143 Lecture #7

Common Approximations used to describe implant profiles

1. Gaussian Distribution - Simple
Better fit near peak regions
2. Pearson IV Distribution - 4 shape-parameters, messy algebra
Better fit even down to low concentration
regions. Default model used in CAD tools

In EE143, we use Guassian approximation for convenience. This discussion of

Pearson IV is just for your reference
Professor Nathan Cheung, U.C. Berkeley

EECS143 Lecture #7