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Chapter 11 Frequency Response
Chapter 11 Frequency Response
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
11.9
Fundamental Concepts
High-Frequency Models of Transistors
Analysis Procedure
Frequency Response of CE and CS Stages
Frequency Response of CB and CG Stages
Frequency Response of Followers
Frequency Response of Cascode Stage
Frequency Response of Differential Pairs
Additional Examples
Chapter Outline
CH 11 Frequency Response
Natural Voice
Telephone System
Mouth
Air
Recorder
Mouth
Air
Ear
Skull
High Bandwidth
Low Bandwidth
Vout
1
g mVin RD ||
C
s
L
The capacitive load, CL, is the culprit for gain roll-off since
at high frequency, it will steal away some signal current
and shunt it to ground.
CH 11 Frequency Response
Vout
Vin
g m RD
RD2 C L2 2 1
F .O.M .
1
VT VCC C L
10
H s j
1
R12C12 2 1
t
Vout t V0 1 exp
u t
R1C1
11
Bode Plot
s
1
z1
H ( s ) A0
s
1
p1
s
1
z2
s
1
p2
12
p1
RD C L
The circuit only has one pole (no zero) at 1/(RDCL), so the
slope drops from 0 to -20dB/dec as we pass p1.
CH 11 Frequency Response
13
p1
RS Cin
p2
Vout
Vin
CH 11 Frequency Response
1
RD C L
g m RD
p21 1 2 p2 2
14
p1
1
RS ||
Cin
gm
CH 11 Frequency Response
p2
RD C L
15
16
Millers Theorem
ZF
Z1
1 Av
ZF
Z2
1 1 / Av
17
Miller Multiplication
18
1
in
RS 1 g m R D C F
CH 11 Frequency Response
out
1
C F
RD 1
g m RD
19
Vout
Vin
R1C1
R12C1212 1
20
C L 39.8nF
Ci 79.6nF
Ri 100 K
g m 1 / 200
21
Capacitive Coupling
Direct Coupling
22
Lower Corner
CH 11 Frequency Response
Upper Corner
23
C Cb C je
24
25
CH 11 Frequency Response
26
27
28
CH 11 Frequency Response
29
Transit Frequency
gm
2f T
CGS
gm
2f T
C
CH 11 Frequency Response
30
3 n
VGS VTH
2f T
2
2L
L 65nm
VGS VTH 100mV
n 400cm 2 /(V .s )
fT 226GHz
CH 11 Frequency Response
31
Analysis Summary
CH 11 Frequency Response
32
CH 11 Frequency Response
33
Vout
g m RD RS Cb s 1
s
VX
RS Cb s g m RS 1
In order to increase the midband gain, a capacitor Cb is
placed in parallel with Rs.
The pole frequency must be well below the lowest signal
frequency to avoid the effect of degeneration.
CH 11 Frequency Response
34
CH 11 Frequency Response
35
CH 11 Frequency Response
36
Example: CE Stage
RS 200
I C 1mA
100
C 100 fF
C 20 fF
CCS 30 fF
37
W 2X
p ,in
Cin
g R C
1 m L XY
2 2
2
1
Cout
2 C XY
RL
1
2
g
R
2
m L
RS
p ,out
CH 11 Frequency Response
38
gm
| z |
C XY
| p1 |
1
RThev Cin RL C XY Cout
1 g m RL C XY RThev
1 g m RL C XY RThev RThev Cin RL C XY Cout
| p 2 |
RThev RL Cin C XY Cout C XY Cin Cout
39
p1
40
RS 200
CGS 250 fF
CGD 80 fF
C DB 100 fF
g m 150
0
RL 2 K
Millers
Exact
Dominant Pole
p ,in 2 571MHz
p ,in 2 264MHz
p ,out 2 428MHz
p ,out 2 4.53GHz
p ,out 2 4.79GHz
CH 11 Frequency Response
41
1
1
Z in
|| r Z in
CGS 1 g m RD CGD s
C 1 g m RC C s
CH 11 Frequency Response
42
Vout
g m RC Ci s
s
1 g m RS Ci s g m
Vin
As with CE and CS stages, the use of capacitive coupling
leads to low-frequency roll-off in CB and CG stages
(although a CB stage is shown above, a CG stage is
similar).
CH 11 Frequency Response
43
p, X
1
RS ||
C X
gm
C X C
p ,Y
rO
CH 11 Frequency Response
RL CY
CY C CCS
44
1
p , Xr
O
1
RS ||
C X
gm
C X CGS C SB
p ,Y
rO
R L CY
CY CGD C DB
45
p, X
1
RS ||
C SB1 CGD1
g m1
CH 11 Frequency Response
p ,Y
1
1
C DB1 CGD1 CGS 2 C DB 2
g m2
46
RS 200
CGS 250 fF
CGD 80 fF
C DB 100 fF
g m 150
0
Rd 2 K
CH 11 Frequency Response
p , X 2 5.31GHz
p ,Y 2 442MHz
47
48
Vout
Vin
C
1
s
gm
2
as bs 1
CH 11 Frequency Response
RS
C C C C L C C L
a
gm
C
RS
b RS C
1
gm
r
CL
gm
49
Vout
Vin
CGS
1
s
gm
2
as bs 1
CH 11 Frequency Response
RS
CGD CGS CGD C SB CGS C SB
a
gm
b RS CGD
CGD C SB
gm
50
RS 200
C L 100 fF
CGS 250 fF
CGD 80 fF
C DB 100 fF
g m 150
0
CH 11 Frequency Response
p1 2 1.79GHz j 2.57GHz
p 2 2 1.79GHz j 2.57GHz
51
Vout
Vin
CGS
1
s
gm
2
as bs 1
RS
CGD1CGS1 (CGD1 CGS1 )(C SB1 CGD 2 C DB 2 )
a
g m1
b RS CGD1
CGD1 C SB1 C GD 2 C DB 2
g m1
CH 11 Frequency Response
52
rO
Cin C / CGD
CH 11 Frequency Response
C / CGS
1 g m RL
53
1
Cin CGD1
CGS 1
1 g m1 rO1 || rO 2
CH 11 Frequency Response
54
V X RS r C s r RS
IX
r C s 1
CH 11 Frequency Response
55
V X RS CGS s 1
I X CGS s g m
CH 11 Frequency Response
56
Active Inductor
57
rO
V X rO1 || rO 2 CGS 3 s 1
IX
CGS 3 s g m3
CH 11 Frequency Response
58
Av , XY
g m1
1
g m2
C x 2C XY
59
p, X
RS || r 1 C 1 2C 1
p ,out
CH 11 Frequency Response
p ,Y
1
1
CCS1 C 2 2C 1
g m2
RL CCS 2 C 2
60
p , out
g m1
CGD1
RS CGS 1 1
g m2
p ,Y
CH 11 Frequency Response
RL C DB 2 CGD 2
1
1
g m2
C DB1 CGS 2
g m2
1
g m1
CGD1
61
RS 200
CGS 250 fF
CGD 80 fF
C DB 100 fF
g m 150
0
RL 2 K
CH 11 Frequency Response
p , X 2 1.95GHz
p ,Y 2 1.73GHz
p ,out 2 442MHz
62
p , out
g m1
CGD1
RS CGS 1 1
g m2
p ,Y
1
C DB1 CGS 2
CH 11 Frequency Response
g m2
1
g m2
1
g m1
RL C DB 2 CGD 2
CGD1 CGD 3 C DB 3
63
1
Z in r 1 ||
C 1 2C 1 s
CH 11 Frequency Response
Z out
1
RL ||
C 2 CCS 2 s
64
Z in
CGS 1
g m1
CGD1 s
1
g m2
CH 11 Frequency Response
Z out
1
RL ||
CGD 2 C DB 2 s
65
Half Circuit
Since bipolar differential pair can be analyzed using halfcircuit, its transfer function, I/O impedances, locations of
poles/zeros are the same as that of the half circuits.
CH 11 Frequency Response
66
Half Circuit
Since MOS differential pair can be analyzed using halfcircuit, its transfer function, I/O impedances, locations of
poles/zeros are the same as that of the half circuits.
CH 11 Frequency Response
67
p ,out
CH 11 Frequency Response
1
RS [CGS 1 (1 g m1 / g m 3 )CGD1 ]
1
g m3
C DB1 CGS 3 1 g CGD1
m1
RL C DB 3 CGD 3
1
g m3
68
Vout
g R R C 1
m D SS SS
VCM
RSS CSS s 2 g m RSS 1
Css will lower the total impedance between point P to
ground at high frequency, leading to higher CM gain which
degrades the CM rejection ratio.
CH 11 Frequency Response
69
Source-Body Capacitance of
M1, M2 and M3
Gate-Drain Capacitance of M3
CH 11 Frequency Response
70
Rin 2 RB 2 || r 2 1 RE
L1
1
2 542 Hz
r 1 || RB1 C1
CH 11 Frequency Response
L 2
22.9 Hz
RC Rin 2 C2
71
Rin 2
CH 11 Frequency Response
RF
1 Av 2
L1
g m1 RS 1 1
2 42.4 MHz
RS 1C1
L 2
1
2 6.92MHz
RD1 Rin 2 C2
72
vX
g m1 RD1 || Rin 2 3.77
vin
CH 11 Frequency Response
73
p1 2 (308 MHz )
p 2 2 (2.15 GHz )
p3
1
RL 2 (1.15CGD 2 C DB 2 )
2 (1.21 GHz )
CH 11 Frequency Response
74