$GYDQFHG 3RZHU 026)(7

IRFZ44

FEATURES

BVDSS = 60 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

RDS(on) = 0.024

Lower Input Capacitance

Improved Gate Charge

ID = 50 A

Extended Safe Operating Area

175C Operating Temperature

TO-220

Lower Leakage Current: 10A (Max.) @ VDS = 60V

Lower RDS(ON): 0.020 (Typ.)

1
2
3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol
VDSS
ID

Characteristic
Drain-to-Source Voltage

Value

Units

60

Continuous Drain Current (TC=25C)

50

Continuous Drain Current (TC=100C)

35.4

IDM

Drain Current-Pulsed

VGS

Gate-to-Source Voltage

EAS

Single Pulsed Avalanche Energy

(2)

200

(1)

20

857

mJ
A

IAR

Avalanche Current

(1)

50

EAR

Repetitive Avalanche Energy

(1)

12.6

mJ

dv/dt

Peak Diode Recovery dv/dt

(3)

5.5

V/ns

Total Power Dissipation (TC=25C)

126

Linear Derating Factor

0.84

W/C

PD
TJ , TSTG
TL

Operating Junction and

- 55 to +175

Storage Temperature Range

Maximum Lead Temp. for Soldering

300

Purposes, 1/8 from case for 5-seconds

Thermal Resistance
Symbol

Characteristic

Typ.

Max.

RJC

Junction-to-Case

--

1.19

RCS

Case-to-Sink

0.5

--

RJA

Junction-to-Ambient

--

62.5

Units
C/W

Rev. B

1999 Fairchild Semiconductor Corporation

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IRFZ44
Electrical Characteristics (TC=25C unless otherwise specified)
Characteristic

Min. Typ. Max. Units

BVDSS

Drain-Source Breakdown Voltage

60

--

--

BV/TJ

Breakdown Voltage Temp. Coeff.

--

0.063

--

VGS(th)
IGSS
IDSS
RDS(on)

Gate Threshold Voltage

2.0

--

4.0

Gate-Source Leakage , Forward

--

--

100

Gate-Source Leakage , Reverse

--

--

-100

--

--

10

--

--

100

--

--

0.024
--

Drain-to-Source Leakage Current

Static Drain-Source
On-State Resistance

gfs

Forward Transconductance

--

32.6

Ciss

Input Capacitance

--

1770 2300

Coss

Output Capacitance

--

590

680

Crss

Reverse Transfer Capacitance

--

220

255

td(on)

Turn-On Delay Time

--

20

40

Rise Time

--

16

40

Turn-Off Delay Time

--

68

140

Fall Time

--

70

140

Qg

Total Gate Charge

--

64

83

Qgs

Gate-Source Charge

--

12.3

--

Qgd

Gate-Drain ( Miller ) Charge

--

23.6

--

tr
td(off)
tf

Test Condition
VGS=0V,ID=250A

V/C ID=250A
V
nA
A

Symbol

pF

See Fig 7

VDS=5V,ID=250A
VGS=20V
VGS=-20V
VDS=60V
VDS=48V,TC=150C
VGS=10V,ID=25A

(4)

VDS=30V,ID=25A

(4)

VGS=0V,VDS=25V,f =1MHz

See Fig 5
VDD=30V,ID=50A,

ns

RG=9.1

See Fig 13

(4) (5)

VDS=48V,VGS=10V,
nC

ID=50A

See Fig 6 & Fig 12 (4) (5)

Source-Drain Diode Ratings and Characteristics

Symbol

Characteristic

Min. Typ. Max. Units

Test Condition

IS

Continuous Source Current

--

--

50

ISM

Pulsed-Source Current

(1)

--

--

200

VSD

Diode Forward Voltage

(4)

--

--

1.8

TJ=25C,IS=50A,VGS=0V

trr

Reverse Recovery Time

--

85

--

ns

TJ=25C,IF=50A

Qrr

Reverse Recovery Charge

--

0.24

--

diF/dt=100A/s

Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=0.4mH, IAS=50A, VDD=25V, RG=27, Starting TJ =25C
(3) ISD 50A, di/dt 350A/s, VDD BV DSS , Starting TJ =25C
(4) Pulse Test : Pulse Width = 250s, Duty Cycle 2%
(5) Essentially Independent of Operating Temperature

Integral reverse pn-diode

in the MOSFET

(4)

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IRFZ44

Fig 1. Output Characteristics

Fig 2. Transfer Characteristics

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V

ID , Drain Current [A]

ID , Drain Current [A]

102

Top :

102

101

@ Notes :
1. 250 s Pulse Test
2. TC = 25 oC
100 -1
10

175 oC
100

@ Notes :
1. VGS = 0 V
2. VDS = 30 V
3. 250 s Pulse Test

25 oC

- 55 oC
10-1

10

101

10

10

VGS , Gate-Source Voltage [V]

VDS , Drain-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current

Fig 4. Source-Drain Diode Forward Voltage

IDR , Reverse Drain Current [A]

RDS(on) , [ ]
Drain-Source On-Resistance

0.04

VGS = 10 V

0.03

0.02

VGS = 20 V

0.01

@ Note : TJ = 25 oC
0.00
0

102

101

@ Notes :
1. VGS = 0 V
2. 250 s Pulse Test

175 oC
25 oC
0

40

80

120

160

200

10
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

240

ID , Drain Current [A]

VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage

Fig 6. Gate Charge vs. Gate-Source Voltage

3500

2100

C iss
C oss

1400

@ Notes :
1. VGS = 0 V
2. f = 1 MHz

C rss
700

00
10

10

VDS , Drain-Source Voltage [V]

10

VGS , Gate-Source Voltage [V]

Capacitance [pF]

2800

Ciss= Cgs+ Cgd ( Cds= shorted )

Coss= Cds+ Cgd
Crss= Cgd

VDS = 12 V
VDS = 30 V
VDS = 48 V

@ Notes : ID = 50.0 A
0
0

10

20

30

40

50

QG , Total Gate Charge [nC]

60

70

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IRFZ44
Fig 7. Breakdown Voltage vs. Temperature

Fig 8. On-Resistance vs. Temperature

2.5

RDS(on) , (Normalized)
Drain-Source On-Resistance

BVDSS , (Normalized)
Drain-Source Breakdown Voltage

1.2

1.1

1.0

0.9

0.8
-75

@ Notes :
1. VGS = 0 V
2. ID = 250 A
-50

-25

25

50

75

100

125

150

175

2.0

1.5

1.0

@ Notes :
1. VGS = 10 V
2. ID =25 A

0.5
-75

200

-50

-25

25

50

75

100

125

150

175

200

TJ , Junction Temperature [oC]

TJ , Junction Temperature [ C]

Fig 9. Max. Safe Operating Area

Fig 10. Max. Drain Current vs. Case Temperature

60

ID , Drain Current [A]

Operation in This Area

is Limited by R DS(on)
10 s

10

100 s
1 ms
10 ms

101

DC

@ Notes :
1. TC = 25 oC

100

10-1 0
10

50

40

30

20

10

2. TJ = 175 oC
3. Single Pulse
101

0
25

102

50

75

100

125

Tc , Case Temperature [oC]

VDS , Drain-Source Voltage [V]

Thermal Response

Fig 11. Thermal Response

100
D=0.5
@ Notes :
1. Z J C (t)=1.19 o C/W Max.
2. Duty Factor, D=t1 /t2
3. TJ M -TC =PD M *Z J C (t)

0.2
10- 1

0.1
0.05
0.02
0.01

PDM
t1

single pulse

t2

Z JC(t) ,

ID , Drain Current [A]

103

10- 2 - 5
10

10- 4

10- 3

10- 2

10- 1

t1 , Square Wave Pulse Duration

100

[sec]

101

150

175

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IRFZ44
Fig 12. Gate Charge Test Circuit & Waveform

Current Regulator

VGS

Same Type
as DUT

50k

Qg

200nF

12V

10V

300nF

VDS

Qgs

VGS

Qgd

DUT
3mA

R1

R2

Current Sampling (IG)

Resistor

Charge

Current Sampling (ID)

Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

RL
Vout

Vout

90%

VDD

Vin

( 0.5 rated VDS )

RG
DUT
Vin

10%

10V
tr

td(on)

td(off)

t on

tf
t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD

LL
VDS
Vary tp to obtain
required peak ID

BVDSS
IAS

ID

RG

C
DUT

ID (t)

VDD

VDS (t)

VDD

10V
tp

tp

Time

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IRFZ44
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
--

IS
L
Driver

VGS
RG
VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
IS controlled by Duty Factor D

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

IS
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

Vf

Body Diode
Forward Voltage Drop

VDD

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.