MICROWAVE INTERGRATED CIRCUITS

Huynh Phu Minh Cuong, PhD

hpmcuong@hcmut.edu.vn

Department of Telecommunications
Faculty of Electrical and Electronics Engineering
Ho Chi Minh city University of Technology
Dr. Cuong HuynhTelecommunications DepartmentHCMUT

MICROWAVE INTERGRATED CIRCUITS

Instructor:
Cuong Huynh (PhD)
Office:
112 B3 , HCMUT
Office Hours: Friday 2:00-4:00 PM
E-mail:
hpmcuong@hcmut.edu.vn
Textbook:
[1] David M. Pozar, Microwave Engineering, John Wiley & Sons, Inc, 4th ed.,
2012.
References:
[2] Gonzalez, Microwave Transistor Amplifiers, Prentice Hall, 2nd ed. 1997
[3] I.D. Robertson, S. Lucyszyn, RFIC and MMIC Design and Technology, The
Institution of Electrical Engineers, London, 2001
[4] V nh Thnh, Mch Siu Cao Tn, NXB HQG, 2006
[5] V nh Thnh, K Thut Siu Cao Tn, NXB HQG, 2004.

Dr. Cuong HuynhTelecommunications DepartmentHCMUT

MICROWAVE INTERGRATED CIRCUITS

Learning outcomes
Understand effects of noise and nonlinearity distortion on microwave
systems and system parameters such as noise figure, input/output referred
noise, 1-dB compression point and third-order intercept point.
Analyze various microwave transceiver architectures and design system
parameters for microwave transceivers.
Analyze, design, fabricate and measure microwave passive components
such as power divider/combiner, directional coupler, hybrid coupler, circulator
and T/R switch.
Analyze, design, fabricate and measure microwave filters using distributed
elements.
Analyze, design, fabricate and measure microwave amplifiers including low
noise amplifier, broadband amplifier and power amplifier.
Analyze, design, fabricate and measure microwave mixers and oscillators.
Use microwave simulation soft-wares such as ADS, Cadence and SDH, and
equipments such as network analyzer, spectrum analyzer, synthesizer and noise
figure analyzer.
Dr. Cuong HuynhTelecommunications DepartmentHCMUT

MICROWAVE INTERGRATED CIRCUITS

Grading
Homework 20%
You are encouraged to work together with your classmates
on the homework. HW can be turned in via Email.
No late homework will be graded

Final Project 30%

Report and PowerPoint presentation are required
Final Exams 50%
Closed book
One single-sided A4 of notes is allowed

Dr. Cuong HuynhTelecommunications DepartmentHCMUT

MICROWAVE INTERGRATED CIRCUITS

Outline
Chapter 1: Fundamentals of Microwave Engineering
Chapter 2: System Parameters and Transceiver
Architectures
Chapter 3: Power Dividers and Directional Couplers
Chapter 4: Microwave Amplifier
Chapter 5: Oscillators and Mixers
Chapter 6: Microwave Filters

Dr. Cuong HuynhTelecommunications DepartmentHCMUT

MICROWAVE INTERGRATED CIRCUITS

Chapter 1

Fundamentals of Microwave Engineering

Huynh Phu Minh Cuong

hpmcuong@hcmut.edu.vn
Department of Telecommunications
Faculty of Electrical and Electronics Engineering
Ho Chi Minh city University of Technology
Dr. Cuong HuynhTelecommunications DepartmentHCMUT

Introduction

and emerging applications !

Integrated Circuits (IC)

Is the key driver behind the scene !

Dr. Cuong HuynhTelecommunications DepartmentHCMUT

Introduction

Dr. Cuong HuynhTelecommunications DepartmentHCMUT

Introduction

Dr. Cuong HuynhTelecommunications DepartmentHCMUT

Introduction

Dr. Cuong HuynhTelecommunications DepartmentHCMUT

Introduction

Dr. Cuong HuynhTelecommunications DepartmentHCMUT

Introduction

Dr. Cuong HuynhTelecommunications DepartmentHCMUT

Introduction

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1.1 Fundamentals of microwave engineering

Transmission lines
V ( x) V .e . x V .e . x

V .l V .l
I (l )
e
e
Z0
Z0

1 ( x )
Z ( x) Z0
1 ( x )

Z L j.R0 .tg ( d )
Z ( x ) R0
R0 j.Z L .tg ( d )

( l )

Z L Z0
Z L Z0

( x) (l ).e

Dr. Cuong HuynhTelecommunications DepartmentHCMUT

1
1

2 d

VSWR
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1.1 Fundamentals of microwave engineering

Can tim hieu ky ve
cac loai mach phoi
hop tro khang

Smith chart

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1.1 Fundamentals of microwave engineering

Impedance Matching

Using lump elements

Using transmission line
ADS Smith chart tool

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1.1 Fundamentals of microwave engineering

Scattering Parameters
At microwave regime: S-parameters
matrix, defined in terms of traveling
waves, is used instead.
The scattering matrix represents the
relation between the voltage incident
waves on the ports to voltage reflected
wave from the ports.
S-parameters are measured with
matched loads rather than open- or
short-circuits.
At microwave frequencies, matched
loads are relatively easy to realize.
S-parameters are measured using
Vector Network Analyzer (VNA).
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S-Parametter Definition

V+n is the incident voltage wave on port n

V n is the reflected voltage wave from port n.

The scattering matrix, or [S] matrix, is defined in relation to these incident
and reflected voltage waves.
Dr. Cuong HuynhTelecommunications DepartmentHCMUT

S-Parametter Definition

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Dr. Cuong HuynhTelecommunications DepartmentHCMUT

Dr. Cuong HuynhTelecommunications DepartmentHCMUT

Example: Find [S]

Dr. Cuong HuynhTelecommunications DepartmentHCMUT

1.2 Technology and device for microwave integrated circuits

Target: smaller size, lighter weight, lower power requirements, lower cost,
and increased complexity.
Microwave integrated circuits (MICs) Technology replace bulky and
expensive waveguide and coaxial components with small and inexpensive planar
components.
MIC technology has advanced to the point where complete microwave
subsystems, such as receiver front ends and radar transmit/receive modules, can be
integrated on a chip that is only a few square millimeters in size.

Hybrid MICs
MIC
MMIC/RFIC
Hybrid Microwave Integrated Circuits
Monolithic Microwave Integrated Circuits
Radio Frequency Integrated Circuits
Dr. Cuong HuynhTelecommunications DepartmentHCMUT

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1.2 Technology and device for microwave integrated circuits

Hybrid MICs

Dr. Cuong HuynhTelecommunications DepartmentHCMUT

MMIC/RFIC

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1.2 Technology and device for microwave integrated circuits

Technology

CMOS
The metaloxidesemiconductor field-effect
transistor (MOSFET)
was first patented
by Julius Edgar Lilienfeld in 1925, well before
the invention of BJT.
Due to the fabrication limitation, MOSFET
has not been used until the early years of 1960s.
CMOS (Complementary MOS p- and n-type
device) was patented by Frank Wanlass in 1967,
initiating a revolution in the semiconductor
industry.
CMOS initially dominates in the digital
circuit/systems while others for analog.
Why CMOS now ? Low cost, high integration
and solution for SOC.
Dr. Cuong HuynhTelecommunications DepartmentHCMUT

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1.2 Technology and device for microwave integrated circuits

CMOS Technology

CMOS Transistors
Interconnect
Diodes
Resistors
Capacitors
Inductors
Bipolar Transistors

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1.2 Technology and device for microwave integrated circuits

CMOS Technology

Intel 45 nm CMOS Process

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1.2 Technology and device for microwave integrated circuits

Microwave Devices
DIODES
BIPOLAR JUNCTION TRANSISTORS
FIELD EFFECT TRANSISTORS
Capacitor
Inductor

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1.2 Technology and device for microwave integrated circuits

Microwave devices

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1.2 Technology and device for microwave integrated circuits

NMOS Transistor

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1.2 Technology and device for microwave integrated circuits

PMOS Transistor

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1.2 Technology and device for microwave integrated circuits

Interconnect

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1.2 Technology and device for microwave integrated circuits

Diode

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1.2 Technology and device for microwave integrated circuits

Resistor

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1.2 Technology and device for microwave integrated circuits

Capacitor

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1.2 Technology and device for microwave integrated circuits

Inductor

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1.3 Microwave simulation tools

Circuit Simulator:
EM simulator:

ADS, Cadence
Momentum, HFSS,IE3D, CST, SONET

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