KSB772

KSB772
Audio Frequency Power Amplifier
Low Speed Switching
Complement to KSD882

TO-126

1. Emitter

2.Collector

3.Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol
VCBO

Value

Units

Collector-Base Voltage

Parameter

- 40

VCEO

Collector-Emitter Voltage

- 30

VEBO

Emitter-Base Voltage

-5

IC

Collector Current (DC)

-3

ICP

*Collector Current (Pulse)

-7

IB

Base Current (DC)

- 0.6

PC

Collector Dissipation (TC=25C)

10

Collector Dissipation (Ta=25C)

Rja

Junction to Ambient

132

C/W

Rjc

Junction to Case

13.5

C/W

TJ

Junction Temperature

150

TSTG

Storage Temperature

- 55 ~ 150

* PW10ms, Duty Cycle50%

Electrical Characteristics TC=25C unless otherwise noted

Symbol
ICBO

Parameter
Collector Cut-off Current

Test Condition
VCB = - 30V, IE = 0

Min.

Typ.

Max.
-1

Units
A

30
60

220
160

-1

400

IEBO

Emitter Cut-off Current

VEB = - 3V, IC = 0

hFE1
hFE2

* DC Current Gain

VCE = - 2V, IC = - 20mA

VCE = - 2V, IC = - 1A

VCE(sat)

* Collector-Emitter Saturation Voltage

IC = - 2A, IB = - 0.2A

- 0.3

- 0.5

VBE(sat)

* Base-Emitter Saturation Voltage

IC = - 2A, IB = - 0.2A

- 1.0

- 2.0

fT

Current Gain Bandwidth Product

VCE = - 5V, IE = - 0.1A

80

MHz

Cob

Output Capacitance

VCB = - 10V, IE = 0
f = 1MHz

55

pF

V
V

* Pulse Test: PW350s, Duty Cycle2%

hFE Classificntion
Classification

hFE2

60 ~ 120

100 ~ 200

160 ~ 320

200 ~ 400

2002 Fairchild Semiconductor Corporation

Rev. B, October 2002

KSB772

Typical Characteristics

1000

VCE = -2V

IB = -10mA
IB = -9mA

-1.6

IB = -8mA
IB = -7mA

-1.2

IB = -6mA
IB = -5mA
IB = -4mA

-0.8

IB = -3mA
IB = -2mA

-0.4

hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

-2.0

100

10

IB = -1mA
0

-4

-8

-12

-16

-1

-20

-10

-1000

-10000

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

VCE(sat),VBE(sat)[mV] SATURATION VOLTAGE

-100

Figure 2. DC current Gain

-10000

1000

IE = 0
f=1MHz

IC = 10 I B

Cob[pF], CAPACITANCE

-1000

VBE(sat)
-100

-10

VCE(sat)

-1
-1

-10

-100

-1000

100

10

-10000

-1

-10

IC[mA], COLLECTOR CURRENT

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

1000

-10

VCE =5V

100

10

1
-0.01

-0.1

-1

IC[A], COLLECTOR CURRENT

Figure 5. Current Gain Bandwidth Product

2002 Fairchild Semiconductor Corporation

IC MAX(DC)
-1

10
ms

1m
s

Dis
Lim sipat
ited ion

s/b
Lim
ite
d

-0.1

VCEOMAX

IC[A], COLLECTOR CURRENT

IC MAX(Pulse)

s
0u
10

fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT

-100

-0.01
-1

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 6. Safe Operating Area

Rev. B, October 2002

KSB772

Typical Characteristics (Continued)

16

140

14

PC[W], POWER DISSIPATION

160

dT[%], Ic DERATING

120

100

s/b

80

Di
ss

60

40

ip
a

tio
n

Lim

Li
m
ite

ited

20

12

10

0
25

50

75

100

125

150

175

200

TC[ C], CASE TEMPERATURE

Figure 7. Derating Curve of Safe Operating Areas

2002 Fairchild Semiconductor Corporation

25

50

75

100

125

150

175

200

TC[ C], CASE TEMPERATURE

Figure 8. Power Derating

Rev. B, October 2002

KSB772

Package Dimensions

8.00 0.30

11.00

3.20 0.10

0.20

3.25 0.20

14.20MAX

3.90

0.10

TO-126

(1.00)

(0.50)

0.75 0.10

#1
2.28TYP
[2.280.20]

2.28TYP
[2.280.20]

16.10

0.30

13.06

0.75 0.10

0.20

1.75 0.20

1.60 0.10

+0.10

0.50 0.05

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation

Rev. B, October 2002

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx
FACT
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EnSigna
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Across the board. Around the world.
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OPTOLOGIC
OPTOPLANAR

PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
SILENT SWITCHER
SMART START

SPM
Stealth
SuperSOT-3
SuperSOT-6
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VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2002 Fairchild Semiconductor Corporation

Rev. I1