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    1. The Czochralski method is used to grow crystalline materials and involves melting a starting material and seeding it with a crystal. 2. A seed crystal is lowered into the melt and slowly pulled up, causing a solid crystal to form by the process of necking and shouldering. 3. This allows for the growth of large, equal diameter single crystals of materials such as silicon, germanium, tin, and others.

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    1. The Czochralski method is used to grow crystalline materials and involves melting a starting material and seeding it with a crystal. 2. A seed crystal is lowered into the melt and slowly pulled up, causing a solid crystal to form by the process of necking and shouldering. 3. This allows for the growth of large, equal diameter single crystals of materials such as silicon, germanium, tin, and others.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    18 views1 page

    Czochralski

    Uploaded by

    tecpoza
    1. The Czochralski method is used to grow crystalline materials and involves melting a starting material and seeding it with a crystal. 2. A seed crystal is lowered into the melt and slowly pulled up, causing a solid crystal to form by the process of necking and shouldering. 3. This allows for the growth of large, equal diameter single crystals of materials such as silicon, germanium, tin, and others.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 1

    The Czochralski method

    seed holder 1. Melting of the starting material


    (water cooled)
    seed 2. Seeding
    growing crystal
    3. Necking
    melt
    4. Shouldering
    crucible
    5. Equal diameter growth
    thermocouple

    heater

    controlled Crystals grown:


    atmosphere
    Si, Ge, Sn, Bi, Au, AlSb, InSb,
    vessel GaSb, CsJ, Kbr, CaF2 , BaF2 ,
    (water cooled)
    NaCl, Li3N, Al-Pd-Mn etc.

    0 4 ln (CS / Ci ) = ln k + (k-1) ln (1-g)

    -1.0
    ln(C S /C i )

    1. Se, k=0.11 1 3
    -2.0 2. Te, k=0.15
    3. In, k=0.10 2
    4. Mn, k=0.05
    -3.0 5. Yb, k=0.007
    10 mm
    -4.0 5
    A view of the AlSb crystal growth
    -5.0

    -1.7 -0.7
    ln(1-g)

    Segregation of Se, Te, In, Mn and Yb in AlSb, as function of the fraction (g)
    10 mm of melt solidified, where k is the effective segregation coefficient, C S the
    AlSb single crystal component of dopant and Ci the initial dopant concentration

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