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    Pnp transistor fabrication o Diffused epitaxial transistor o Doping profile Disadvantage of this process: collector is p--doped. Low conductivity of collector layer

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    Pnp transistor fabrication o Diffused epitaxial transistor o Doping profile Disadvantage of this process: collector is p--doped. Low conductivity of collector layer

    Copyright:

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    13 views2 pages

    A MT Ch26 BJT Fabrication

    Uploaded by

    sunnymeharwal
    Pnp transistor fabrication o Diffused epitaxial transistor o Doping profile Disadvantage of this process: collector is p--doped. Low conductivity of collector layer

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 2

    ECSE‐2210, Microelectronics Technology, Prof. E. F.

     Schubert 

    BJT – Fabrication

     pnp transistor fabrication

    o Diffused epitaxial transistor

    o Doping profile

    Disadvantage of this process: Collector is p–-doped.


     Low conductivity of collector layer

    Chapter 26 – page 1 
    ECSE‐2210, Microelectronics Technology, Prof. E. F. Schubert 

    o Diffused epitaxial transistor with p+ sub-collector

    Advantage: High collector conductivity

    o Implanted bipolar transistor

    Advantage: Great flexibility by ion implantation n++ and p++ contacts

    Today > 95 % of bipolar transistors are fabricated by ion implantation.

    Chapter 26 – page 2 

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