Ebers-Moll model of the pnp bipolar junction

transistor (BJT)

Dr. B.I.Lembrikov
Holon Institute of Technology,
Faculty of Electronics, Communications and Electrical Engineering
November 3, 2008

1 Basic Equations
The emitter current in a pnp bipolar junction transistor (BJT) is given by

IE = IEp + IEn

Dn nE0 Dp pB0 w qVEB

= qA + coth exp 1
LnE LpB LpB kB T
qADp pB0 qVCB
exp 1 (1)
LpB sinh w kB T
LpB

The collector current in a pnp BJT is given by

qVCB
IC = ICp + ICn = qA exp 1
kB T

Dp pB0 w Dn nC0
coth +
LpB LpB LnC
qADp pB0 qVEB
+ exp 1 (2)
LpB sinh w kB T
LpB

2 Equivalent Circuit for a pnp BJT Based on

the Ebers-Moll Model
The equivalent circuit for a pnp BJT based on the Ebers-Moll model is shown
in Fig. 1.

1
 IF IR

E C

IE IC

αRIR αF IF
IB

Figure 1: Large signal equivalent circuit for a pnp BJT based on the Ebers-Moll
equations

We de…ne the terms in equations (1) and (2) as follows.

Dn nE0 Dp pB0 w
IES = qA + coth (3)
LnE LpB LpB

Dp pB0 w Dn nC0
ICS = qA coth + (4)
LpB LpB LnC
qVEB
IF = IES exp 1 (5)
kB T
qVCB
IR = ICS exp 1 (6)
kB T
qADp pB0
F IES = R ICS = (7)
w
LpB sinh LpB

Substituting (3)-(7) into (1) and (2) we obtain the following equations.

IE = IF R IR (8)

IC = F IF IR (9)
Equations (8) and (9) are the Ebers-Moll model equations for a pnp BJT. Eval-
uate F from (7).
qADp pB0
F =
LpB sinh LwpB IES
qADp pB0
= h i
Dp pB0
LpB sinh w
LpB qA DLnnE
nE0
+ LpB coth w
LpB

2
 1
=
Dn nE0 LpB w w
Dp pB0 LnE sinh LpB + cosh LpB

1
= dc (10)
Dn NDB LpB w w
Dp NAE LnE sinh LpB + cosh LpB

where
n2i n2i
pB0 = ; nE0 =
NDB NAE
and
nE0 NDB
=
pB0 NAE

3 Active Regime of Operation

In the case of the active regime of operation of pnp BJT VEB > 0, VCB < 0.
Then
qVCB qVCB
exp 1; IR = ICS exp 1 ICS
kB T kB T
and the Ebers-Moll equations reduce to

qVEB
IE = IES exp 1 + R ICS (11)
kB T

qVEB
IC = F IES exp 1 + ICS (12)
kB T
From (11) we get
qVEB IE R ICS
exp 1 = (13)
kB T IES
Substitute (13) into (12). We obtain

(IE R ICS )
IC = F IES + ICS = F (IE R ICS ) + ICS (14)
IES
Taking into account (10) we obtain

IC = dc IE + ICS (1 dc R ) (15)

Compare (15) with the expression for the common base collector current

IC = dc IE + ICB0 (16)

we obtain
ICB0 = ICS (1 dc R ) (17)