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  • BJT Fabrication Processes and Implanted Transistors

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    Abhishek Singh
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    This document discusses different fabrication methods for bipolar junction transistors (BJTs) taught in the ECSE-2210 Microelectronics Technology course with Professor E. F. Schubert. It describes the traditional pnp transistor fabrication process and its disadvantage of low collector conductivity due to a p-doped collector layer. An improved method uses a p+ sub-collector for higher collector conductivity. Modern BJTs are predominantly fabricated using ion implantation, which provides great flexibility in doping profiles and contacts.

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    BJT Fabrication

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    This document discusses different fabrication methods for bipolar junction transistors (BJTs) taught in the ECSE-2210 Microelectronics Technology course with Professor E. F. Schubert. It describes the traditional pnp transistor fabrication process and its disadvantage of low collector conductivity due to a p-doped collector layer. An improved method uses a p+ sub-collector for higher collector conductivity. Modern BJTs are predominantly fabricated using ion implantation, which provides great flexibility in doping profiles and contacts.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    210 views2 pages

    BJT Fabrication Processes and Implanted Transistors

    Uploaded by

    Abhishek Singh
    This document discusses different fabrication methods for bipolar junction transistors (BJTs) taught in the ECSE-2210 Microelectronics Technology course with Professor E. F. Schubert. It describes the traditional pnp transistor fabrication process and its disadvantage of low collector conductivity due to a p-doped collector layer. An improved method uses a p+ sub-collector for higher collector conductivity. Modern BJTs are predominantly fabricated using ion implantation, which provides great flexibility in doping profiles and contacts.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 2

    ECSE2210,MicroelectronicsTechnology,Prof.E.F.

    Schubert

    BJT Fabrication pnp transistor fabrication o Diffused epitaxial transistor

    o Doping profile

    Disadvantage of this process: Collector is p-doped. Low conductivity of collector layer

    Chapter26page1

    ECSE2210,MicroelectronicsTechnology,Prof.E.F.Schubert

    o Diffused epitaxial transistor with p+ sub-collector

    Advantage: High collector conductivity

    o Implanted bipolar transistor

    Advantage: Great flexibility by ion implantation n++ and p++ contacts Today > 95 % of bipolar transistors are fabricated by ion implantation.

    Chapter26page2

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