SHINDENGEN

HVX-2 Series Power MOSFET

N-Channel Enhancement type

2SK2676
( F10W90HVX2 )
900V 10A
FEATURES
Input capacitance (Ciss) is small.

OUTLINE DIMENSIONS
Case : MTO-3P (Unit : mm)

Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION
Switching power supply of AC 240V input High voltage power supply Inverter

RATINGS
Absolute Maximum Ratings Tc = 25 Item Symbol Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain CurrentDC IDP Continuous Drain CurrentPeak) IS Continuous Source CurrentDC PT Total Power Dissipation IAR Repetitive Avalanche Current EAS Single Avalanche Energy EAR Repetitive Avalanche Energy TOR Mounting Torque Conditions Ratings -55150 150 900 30 10 20 10 120 10 260 26 0.8 Unit V

Pulse width10s, Duty cycle1/100

A W A mJ Nm

Tch = 150 Tch = 25 Tch = 25 Recommended torque 0.5 Nm

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

HVX-2 Series Power MOSFET

Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranconductance Static Drain-Source On-tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff

2SK2676 ( F10W90HVX2 )
Conditions Min. 900 Typ. Max. 250 0.1 4.8 2.5 8.0 1.05 3.0 Unit V A S V

ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = 30V, VDS = 0V ID = 5A, VDS = 10V ID =5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 10A VDS = 25V, VGS = 0V, f = 1MHZ ID = 5A, RL = 30, VGS = 10V

90 2150 50 210 140 440

1.4 3.5 1.5 1.04 / nC pF 250 740 ns

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

2SK2676
20 Tc = 55C

Transfer Characteristics

25C 15

Drain Current ID [A]

100C 10 150C

VDS = 25V TYP 0 0 5 10 15 20

Gate-Source Voltage VGS [V]

2SK2676
100

Static Drain-Source On-state Resistance

Static Drain-Source On-state Resistance RDS(ON) []

10

ID = 5.0A 1

0.1

0.01

VGS = 10V pulse test TYP -50 0 50 100 150

Case Temperature Tc [C]

2SK2676
6

Gate Threshold Voltage

Gate Threshold Voltage VTH [V]

1 VDS = 10V ID = 1mA TYP -50 0 50 100 150

Case Temperature Tc [C]

2SK2676
100

Safe Operating Area

10 100s 200s 1 R DS(ON) limit

Drain Current ID [A]

1ms

10ms DC 0.1

Tc = 25C Single Pulse 0.01 1 10 100 1000

Drain-Source Voltage VDS [V]

2SK2676
Transient Thermal Impedance

10

Transient Thermal Impedance jc(t) [C/W]

0.1

0.01 10-4 10-3

10-2

10-1

100

101

Time t [s]

2SK2676
100

Single Avalanche Energy Derating

Single Avalanche Energy Derating [%]

80

60

40

20

50

100

150

Starting Channel Temperature Tch [C]

2SK2676
10000

Capacitance

Ciss

1000

Capacitance Ciss Coss Crss [pF]

Coss 100

Crss

10

f=1MHz Ta=25C TYP 1 0 20 40 60 80 100

Drain-Source Voltage VDS [V]

2SK2676
Single Avalanche Current - Inductive Load
VDD = 100V VGS = 15V 0V Rg = 35

IAS = 10A

10

Single Avalanche Current IAS [A]

EAR = 26mJ

EAS = 260mJ

1 0.1 1

10

100

Inductance L [mH]

2SK2676
100

Power Derating

80

Power Derating [%]

60

40

20

50

100

150

Case Temperature Tc [C]

2SK2676
500

Gate Charge Characteristics

20

VDS

Drain-Source Voltage VDS [V]

15 VGS VDD = 400V 300 200V 100V 200 10

5 100 ID = 10A TYP 0 0 50 100 0 150

Gate Charge Qg [nC]

Gate-Source Voltage VGS [V]

400