Sketch oI a buried-channel CCD showing the coordinate system and the

structure assumed Ior the present calculations.

TIc cffcci of doing rofilc on iIc cIaracicrisiics of luricd-cIanncl
cIargc-coulcd dcviccs
) ) ) y x x y x
v u
+ =
(1)
s ox
ox
s
s s ox g
x E J J
s
s
+ = + =
s
d d
s
x qN
s

=
Potential and Electric Field in BCCD
(2)
(3)
s
d d
s
x qN
E
s
=
(4)

= +
g s ox
ox
s
d
s s
J E x
qN
E
s
s s
(5)
ox
ss
MS FB
C
Q
J =o
(6)
) ) )

+ + =
ox
s ox d
FB g FB g
ox
s
ox d FB g s
x qN
J J J J x qN J J
s
s
s
s

(7)
) dx qN x dE
d
s
u
s

=
(8)
)

+ =
x
o s
d
s u
dx qN
E x E
s
) )dx x E x
x
o
u s u

=
(9)
(10)

= \
v
W
(11)
) = y x W
v
at
C F x

;
(z) satisfies Laplace's equation
which is sol;ed using the following boundary conditions:
(i)
(ii)
ox ox s s
E E s s =
at the interface
(iii) ) =
v
W
(i;) the gate ;oltage is represented by a Fourier series
) ) y J y J
n
n g
C
=
'
=

(12)
where
) ) ) . J

|

=
'

d y in J
L
y J
L
O
g n
exp

#e
with 2x/L. Then
;
(z) is gi;en by
)
) ) . J

+

=
C
=
L
O ox ox
n
g
v
x n x n
d i : n J
L
: W
s

sinh cosh
exp

(13)
(14)
y
i
x :
W
v v v
N
N
+
N
N
=
N
N
(15)
) ) y J
x n x n
x n x n
y x
n
n
ox ox
v
'
+

C
=
sinh cosh
sinh cosh

s
s

for x
ox
A x A 0
(16a)
) )

C
=
+
'
=

sinh cosh
exp
n
ox ox
n
x n x n
y J x n
s

for x > 0 (16b)

) )
) )
ox ox
n
n g
ox v
x n x n
L ny
L nd
L nd
L
J
y x E
s
x
x
x
sinh cosh
/ cos
/
/ sin

+
=

C
=
+
(17)
)
L
J
L
x
O x E
g
ox
ox v
. 6 =
(18)
ox
ox
s
p
= \

(19a) nsulator (oxide):

Top p-layer:
) . J x N N n p
q
s d a
s
p
s
+ = \

(19b)
Bottom n-substrate:
) . J x N n p
q
s d
s
p
s
+ + = \

(19c)
Potential and Electric Field for Different Doping Profiles and
Signal Charge Le;els
Zero Signal Charge:
s
d a
b
x qN
E
s
=
(20)
a
b s
s
d a
b
qN
E x qN


s
s
= =
(21)
ox
ox
s
s s g
x E J
s
s
=
(22)
)
)

=
.
x
x
s
d
b u
dx x qN
E x E
s
(23)
) )dx x E x
.
x
x
u b u

=
(24)
) o E E
u s
=
(25a)
) o
s
=
(25b)
)
)
s
. d
b u
x x qN
x
s

=
(26)
)
s
d
b u
x qN
x
s

=
for 0A x A x
1 (27a)
)

xx x x
qN x qN
s
d
s
d
b
+ =
s s
for x
1
A x A x
2
(27b)
) ) ) ) ) . J

x x x x x x x
qN
x x
qN
x
s
d
s
d
b u
+ + =
s s

for x
2
A x A x
c
(27c)
)
)
dx
dx x qN
E x
. .
x
x
x
x
s
d
b b u

=
s

(28)
)dx x N
q
E
dx
d
d
x
x s
b
u
.
2

= =
s

(29)
)dx x E
qN
E
.
2
x
x
u
a
b s
2

+ =

(30)
inite Signal Charge
) ) . J

|

=
%
q
x x
2 u s2 s
p p exp (31)
Calculation of ringing-ield and Transfer Speed
) ) ) ) . J

sinh cosh

+ =
ox ox
o
v v
x n x n : W : W s (32)
where
) ) ) . J d i : n J
L
: W
n
L
O
g
o
v

C
=
=

exp

(33)
) ) )d: : W s: s W
v v

C
C
= exp
) ) ) ) . J

sinh cosh

+ =
ox ox
o
v v
sx sx s W s W s
(34)
(35)
) ) ) )

+ =

exp

ox ox
sx sx
ox
o
v v
e e sx s W s W
s
s (36)
) ) ) ) . J ) . J . J
ox
o
v ox
o
v ox
o
v v
x : W x : W x : W : W

+ + + +

+ + = s s
s
s s
(37)
) ) ) ) ) . J

s
s F F F : W
o v
+

+ =
(38a) for storage mode
) ) ) ) ) . J

s
s F F F : W
o v
+

+ = for storage mode

(38b)
)
)
)

=
exp
exp
ln

i
i
iJ
F
2
2
g
2
x
x
x

)
)

|

+ +
=

ln
2
2 2
g
2
iJ
F

and
ox
x K s =
'

)
ox
x K

+ =
'
s
)
ox
x K

=
'
s
) . J

exp K :
'
+ =
) . J

exp K :
'
+ =
) . J

exp K :
'
+ =
)
) ) ) ) . J

s
s
d:
: dW
o
v
+

+ =
for storage mode (39a)
)
) ) ) ) . J

s
s
d:
: dW
o
v
+

+ =
for storage mode
(39b)
) )

+ + =
2 2
g
2
L
J

)
)

+
=
2
2 2
g
2
L
J i

) ) ) : W x y x
v u
#e + =
)

=
N
N
x
y x
) )
ox
o
v v
x : W : W s + =
(41)
)

v
tr
y O E
dy
3
:
(42)
s
p a
b
W qN
E
Z
=
a
b s
s
p a
b
qN
E
W qN

Z
=
Z
= o
and
ox
ox
s
s s g
X E J
Z
Z
= o
)
)

Z
=
.
X
X
s
d
b
dx x qN
E x E
) )dx x E x
.
X
X
b

=o o
) E E
s
=
) o o =
s
and
)dx x N
q
E
dx
d
d
X
X s
b
.
2

Z
= =
o
)dx x E
qN
E
.
2
X
X
a
b s
2

+
Z
=

o
d and poLnLa for Lh cas of fnL sna char
) ) ,

=
%
q
x x
2 s2 s
o o p p exp
)

= e x
s2 s
p p
Lch of poLnLa dsLrLon for dffrnL vas of Lh sna char for a nform dopd dvc
wLh a dopn of n
a
10
14
cm
3
a srfac ar dopn of n
a
20L10
14
cm
3
and an oxd
Lhcnss of 023m 1h char s n nLs of 10 cLrons pr cm
2

& As cacaLd L ss and Cood (1974)

9oLnLa dsLrLon crv for assan dopn wLh n
d
46 L 10
13
cm
3
n
a
1L 10
14
cm
3
and x
c
33mx
ox
02 3m 1h char s n nLs of 10 cLron pr cm
2

(a)
9oLnLa dsLrLon for sLppd dopn prof wLh a pa of n
d0
473L10
13
cm
3
sprad ovr 033m Lo 233m n
a
1L10
14
cm
3
x
c
33m x
ox
023m
()
9oLnLa dsLrLon for sLppd dopn prof wLh a pa of n
d0
93L10
13
cm
3
sprad ovr 133m Lo 233m n
d
1L10
14
cm
3
x
c
33m x
ox
023m
CacaLon of frnn fd and Lransfr spd
) )
) ,
) )

C
=
Z +

=

sinh cosh
exp
n
X X

g J
X n X n
d i : n
J

: W

whr
iy x : + =

x
=
X
s

Z
Z
Z=
L can shown LhaL W
v
(z) saLsfs Lh rcrrnc raLon
) ) ) : W X : W X : W
J X J X J

= +
Z

+ Z
whr W
v
0
(z) s Lh va of W
v
(z) for x
0x
0 and x> 0 vn
) ) ) , . J d i : J

: W

g J
=

exp

L W
v
(s) Lh dosdd apac Lransform of W
v
(z) Lhn
) ) )d: : W s: s W
J J

C
C
= exp
) ) ) ) . J

sinh cosh

+ =
X X
sX sX s W s W
w oLan Lh approxmaLon
) ) ) ) , ) , . J
X J X J X J J
X : W X : W X : W : W

Z + + + Z +
Z
+ Z + Z =
) )
X J J
X : W : W

Z + =
) )
)
) )

|

)
`

|
,
|

Z =
/ exp
/ exp
ln

i
i iJ
: W
J
x
x
x
)
) )
)
) )

|

)
`

|
,
|

+
)
`

|
,
|

Z
+
/ exp
/ exp
ln
/ exp
/ exp
ln

i
i
i
i iJ
x
x
x
x
x
whr
B S
J J J =
X
X K

=Z
)
X
X K

+ Z =
)
X
X K

Z =
) . J K : + = exp

) . J

exp K : + =
) . J

exp K : + =
)
)
) ) )

)
`

|
,
|

+
+

+ Z
+

+
Z =

iJ
d:
: dW
J
) ) ) : W x y x
J
#e + =o o
)

=
N
N
x
y x o
)

y
tr
y E
dy
3
:
aLra chann fd for a Lhrphas CCu n Lh sLora and Lransfr phass
of opraLon
aLra chann fd vrss x/x
0x
1h maxmm fd s oLand aL x/x
0x
40
hapn Lh coc pss
()
A daram of Lh rasLc wavform appd aL Lh cLrods
()
aLra chann fd vrss Lh nLh of Lh aL cLrod for dffrnL
nsLanLs of Lm
.2 J
n
E
o
se1
/

. 7

L =
o
ox
o
qn
C L
t
3 7 .

=
n
C
q
ave
ox
=
3

L
th
.

= :
L
J
L
X
E
g
ox
1
. 6 =
Charge Transfer Process