KSA1015

KSA1015
LOW FREQUENCY AMPLIFIER
Collector-Base Voltage : VCBO= -50V Complement to KSC1815

TO-92

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TST9 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -50 -50 -5 -150 -50 400 125 -65 ~ 150 Units V V V mA mA mW C C

Electrical Characteristics Ta=25C unless otherwise noted

Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC= -100A, IE=0 IC= -10mA, IB=0 IE= -10A, IC=0 VCB= -50V, IE=0 VEB= -5V, IC=0 VCE= -6V, IC= -2mA VCE= -6V, IC= -150mA IC= -100mA, IB= -10mA IC= -100mA, IB= -10mA VCE= -10V, IC=-1mA VCB= -10V, IE=0, f=1MHz VCE= -6V, IC= -0.1mA f=100Hz, RG=10k 80 4 0.5 7 6 70 25 -0.1 Min. -50 -50 -5 -0.1 -0.1 400 -0.3 -1.1 V V MHz pF dB Typ. Max. Units V V V A A

hFE Classification
Classification hFE1 O 70 ~ 140 Y 120 ~ 240 GR 200 ~ 400

2002 Fairchild Semiconductor Corporation

Rev. A3, September 2002

KSA1015

Typical Characteristics

-50 -45

1000

IC[mA], COLLECTOR CURRENT

IB = -400 A IB = -350 A IB = -300 A IB = -250 A IB = -200 A IB = -150 A IB = -100 A IB = -50 A

VCE = -6V

-40 -35 -30 -25 -20 -15 -10 -5 0 0 -2 -4 -6 -8

hFE, DC CURRENT GAIN

100

10

-10

-12

-14

-16

-18

-20

1 -0.1

-1

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VBE(sat)[V], VCE(sat)[V], SATURATION VOLTAGE

-10

-100

IC=10IB

VCE =-6V

-1

IC[mA], COLLECTOR CURRENT

-1 -10 -100

VBE(sat)

-10

-0.1

V CE(sat)

-1

-0.01 -0.1

-0.1 -0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

IC[mA], COLLECTOR CURRENT

VBE (sat)[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

1000

f=1MHz IE =0

VCE=-6V

Cob[pF], CAPACITANCE

10

hFE, DC CURRENT GAIN

1 -1 -10 -100

100

10 -1 -10

VCB[V], COLLECTOR-BASE VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance

Figure 6. Current Gain Bandwidth Product

2002 Fairchild Semiconductor Corporation

Rev. A3, September 2002

KSA1015

Package Dimensions

TO-92
4.58 0.15
+0.25

0.46

14.47 0.40

0.10

4.58 0.20

1.27TYP [1.27 0.20] 3.60

0.20

1.27TYP [1.27 0.20]

0.38 0.05

+0.10

3.86MAX

1.02 0.10

0.38 0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. A3, September 2002

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2002 Fairchild Semiconductor Corporation

Rev. I1