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PD - 91742A

IRF9Z24NS/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z24NS) l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description
l l

D

VDSS = -55V RDS(on) = 0.175Ω

G

ID = -12A
S

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z24NL) is available for low-profile applications.

D 2 P ak

T O -26 2

Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V… Continuous Drain Current, VGS @ -10V… Pulsed Drain Current … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Max.
-12 -8.5 -48 3.8 45 0.30 ± 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case )

Units
A W W W/°C V mJ A mJ V/ns °C

Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.
––– –––

Max.
3.3 40

Units
°C/W

www.irf.com

1
7/16/99

duty cycle ≤ 2%.5 and center of die contact 350 ––– VGS = 0V 170 ––– pF VDS = -25V 92 ––– ƒ = 1. pulse width limited by max. Max. ID = -7. T J = 150°C 100 VGS = 20V nA -100 VGS = -20V 19 ID = -7. … Uses IRF9Z24N data and test conditions RG = 25Ω. TJ ≤ 175°C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). See Fig.2A -25 VDS = -55V.2A „ -4. ‚ Starting TJ = 25°C. VGS = 0V µA -250 VDS = -44V. IF = -7. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 5… Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) • Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. 10 „… Between lead.6 V TJ = 25°C. ( See fig.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ.2A ns ––– RG = 24Ω ––– RD = 3.2A 5.7mH 2 www. S ––– ––– -1. VGS = 0V. ID = -1mA… 0.2A. ––– -0. (See Figure 12) ƒ ISD ≤ -7.2A ––– 84 130 nC di/dt = -100A/µs „… Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating. See Fig. junction temperature. ID = -7.05 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 55 23 37 ––– ––– ––– Max.2A. IAS = -7.0MHz.0 2.7Ω. VGS = 0V „ ––– 47 71 ns TJ = 25°C. di/dt ≤ -280A/µs.1 nC VDS = -44V 10 VGS = -10V. 11 ) „ Pulse width ≤ 300µs. For recommended footprint and soldering techniques refer to application note #AN-994.175 Ω VGS = -10V. -55 ––– ––– -2. Units Conditions ––– V VGS = 0V.IRF9Z24NS/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. 6 and 13 „… ––– VDD = -28V ––– ID = -7. nH 7. ID = -250µA ––– V/°C Reference to 25°C. Typ.com . See Fig.2A. ID = -250µA ––– S VDS = -25V.irf. IS = -7. Units Conditions D MOSFET symbol ––– ––– -12 showing the A G integral reverse ––– ––– -48 p-n junction diode. VDD ≤ V(BR)DSS. L = 3.0 V VDS = VGS.

Typical Output Characteristics 100 2.IRF9Z24NS/L 100 VGS .0V BOTTOM .0V .5V TO P 2 0µ s P U LS E W ID TH Tc 25°C T 5°C J=2 100 -ID .6.4.10V .0V . D rain-to-S ource V oltage (V ) Fig 1.com 3 .5.5.1 1 10 -4 .5 TJ = 25 °C 10 TJ = 1 7 5 °C 1.5.15V .5V TOP 10 -4.7. D rain-to-S ource C urrent (A) 1. Typical Output Characteristics Fig 2. Drain-to-S ource O n Resistance (N orm alized) I D = -12 A -I D .5.0V BOT TOM .6. Normalized On-Resistance Vs.15V . Temperature www. D rain-to-S ourc e V oltage (V ) -VD S .0V .5V .10V .4.0 -60 -40 -20 0 20 40 60 80 VG S = -1 0V 100 120 140 160 180 A -VG S .0 0. Junction T em perature (°C ) Fig 3.8.5 V 1 0.5 V A 100 1 0.5 1 4 5 6 7 V DS = -2 5 V 2 0µ s P U L S E W ID TH 8 9 10 A 0. D rain-to-S ou rc e C urre nt (A ) 10 -ID .8.0 R D S (on) .0V . Typical Transfer Characteristics Fig 4.0V .irf.1 1 2 0µ s P U LS E W ID TH TC 175°C T 75 °C J=1 10 100 A -VD S .7. Ga te -to-Source Volta ge (V) T J .0V . Drain-to-Source Current (A ) VGS .5V .

6 A 1 1 T C = 25 °C T J = 17 5°C S ing le P u lse 10 10m s 100 1.IRF9Z24NS/L 700 -V G S .8 A -VS D . Typical Gate Charge Vs. G ate-to-S ource V oltage (V ) 600 V GS C is s C rs s C o ss = = = = 0V .8 1.com .2 1.2 A V D S = -44 V V D S = -28 V 16 C . D rain-to-S ourc e V oltage (V ) Q G . D rain-to-S ourc e V oltage (V ) Fig 7.6 0. f = 1M H z C g s + C g d . Capacitance (pF) 500 C iss C oss 400 12 300 8 200 C rss 4 100 0 1 10 100 A 0 0 5 10 FO R TE S T CIR C U IT S E E FIG U R E 1 3 15 20 25 A V D S . Typical Capacitance Vs. Reverse D rain Current (A ) O P E R A TIO N IN T H IS A R E A L IM IT E D B Y R D S (o n) 10µ s 10 TJ = 15 0°C TJ = 2 5°C -I D .irf.1 0. Gate-to-Source Voltage 100 100 -I S D .4 0. D rain C urrent (A ) 10 100µs 1 1m s 0. Drain-to-Source Voltage Fig 6. Typical Source-Drain Diode Forward Voltage Fig 8. Total G ate C harge (nC ) Fig 5. S ourc e-to-D rain V oltage (V ) -VD S . Maximum Safe Operating Area 4 www.4 V G S = 0V 1.0 1. Cd s S H O R T E D C gd C d s + C gd 20 I D = -7 .

2 0 0 .com 5 .U. D rain C urrent (A m ps ) 9 D. P e a k TJ = P D M x Z th J C + T C A 1 0.T. C as e Tem perature (°C ) 90% Fig 9.0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o tes : 1 .irf. Switching Time Test Circuit 3 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 150 A 175 10% TC . Maximum Drain Current Vs.1 % Fig 10a. + RG VDD -10V 6 Pulse Width ≤ 1 µs Duty Factor ≤ 0. D u ty f ac to r D = t PD M 0. Maximum Effective Transient Thermal Impedance.1 t 1 t2 1 /t 2 0.IRF9Z24NS/L 12 VDS VGS RD -ID .0 2 0 .5 0 1 0 . Junction-to-Case www.1 t 1 .1 0 0 .01 0.001 0. Case Temperature VDS Fig 10b.01 0.0 5 0 .00001 2 .0001 0. Switching Time Waveforms 10 Therm al R esp ons e (Z thJ C ) D = 0 . R e c ta n g u la r P u lse D u ra tio n (s e c ) Fig 11.

+VDS -3mA Charge IG ID Current Sampling Resistors Fig 13a. J unc tion T em perature (°C ) Fig 12c.U.3µF D.U .com .T. S ingle Pulse Avalanc he E nergy (m J) VD S L 250 TOP 200 RG D . 50KΩ QG 12V . Maximum Avalanche Energy Vs.2 A -2 0 V tp 150 100 15V Fig 12a.irf.T IA S D R IV E R 0 .2µF -10V QGS VG QGD VGS .0 1Ω VD D A B O T TO M ID -2 .U.IRF9Z24NS/L E A S .9A -5 . Unclamped Inductive Waveforms Current Regulator Same Type as D. Unclamped Inductive Test Circuit 50 0 25 50 75 100 125 150 A 175 IAS S tarting T J . Gate Charge Test Circuit 6 www. Drain Current tp V (BR)DSS Fig 12b.1A -7.T. Basic Gate Charge Waveform Fig 13b.

U. Period D= P. For P-Channel HEXFETS www.U.IRF9Z24NS/L Peak Diode Recovery dv/dt Test Circuit D.U.T.W.T.irf.Device Under Test + VDD * Reverse Polarity of D.0V for Logic Level and 3V Drive Devices Fig 14. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ] *** VGS = 5.U.com 7 .T* + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.W. Period [VGS=10V ] *** D.U.T for P-Channel Driver Gate Drive P. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.T. .

29 (.7 8 (.02 7 ) 0 .5 80) 5 .4 05) 1.89 (.D R AIN 3 .018 ) M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.1 03 ) 2.16 (.47 (.61 (.5M .14 (. 6.01 0 ) M B A M 0. 198 2.1 85) 4. 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.8 9 (. LE A D A SS IG N M E N TS 1 .3 50 ) R E F.40 (.0 5 5) 1.03 7 ) 3X 0 .5 4 (.05 2) 1.0 4 5) 8.08 2) 2X 2.0 91 ) 1.5 5 (.20 8) 4 .28 (.2 9 (.090 ) 2.0 55) 1. 1.4 9 (.022 ) 0. 3 C O N TRO L LIN G D IM EN SIO N : IN C H .05 0) 1 3 3X 1.18 8) 2.93 (.70 0) 3 .6 10) 14 .IRF9Z24NS/L D2Pak Package Outline 1 0.7 9 (.110 ) 2.20 0) 0 .com .8 1 (.2 43 ) 15 .20 (.15 0) 2 .0 45) 5 .07 0) 1.1 4 (.055 ) M AX. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.78 (.25 (. -A2 4.4 15) 1 0.04 8) 1 0.3 50 ) 17 .irf.100 ) 2X Part Marking Information D2Pak IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 8 www.54 (.43 (.4 6 (.2 55 ) 6.08 (.69 (.78 (.08 (.69 (.3 2 (.4 0 (.18 (.S O U RC E 8.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP.7 3 (.4 00 ) RE F.3 9 (.2 2 (.G A TE 2 .32 (.1 65) -B 1.2 7 (.

irf.com 9 .IRF9Z24NS/L Package Outline TO-262 Outline Part Marking Information TO-262 www.

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