EEE 5

Lecture 19: PN Junction Applications

Turn-On Transient
x
Consider a p
+
n diode (Q
p
>> Q
n
):

t
i(t)
t
v
A
(t)
0 < =
= p x x
n
qAD
i
dx
dp
n
For t > 0:
Ap
n
(x)
x
n
By separation of variables and integration, we
have


If we assume that the build-up of stored
charge occurs quasi-statically so that


then
+
> = = 0 for

t
Q
I
Q
i
dt
dQ
p
p
F
p
p p
( )
p
t
p F p
e I t Q
/
1 ) (

=
( )
p
kT qv
p diffusion p
A
e I I t Q 1 ) (
/
0
= =
( )
(

+ =

p
t
F
A
e
I
I
q
kT
t v
/
0
1 1 ln ) (
If t
p
is large, then the time required to turn on
the diode is approximately Q/I
F


j p
Q Q Q A + A = A where
Summary of Important Concepts
Under forward bias, minority carriers are injected
into the quasi-neutral regions of the diode.
The current flowing across the junction is
comprised of hole and electron components.
If the junction is asymmetrically doped (i.e. it is one-
sided) then one of these components will be
dominant.


In a long-base diode, the injected minority carriers
recombine with majority carriers within the quasi-
neutral regions.
The ideal diode equation stipulates the
relationship between J
N
(-x
p
) and J
P
(x
n
):




For example, if holes are forced to flow across
a forward-biased junction, then electrons must
also be injected across the junction.
|
|
.
|

\
|
=

side n
i
side p
i
A n p
D p n
n P
p N
n
n
N L D
N L D
x J
x J
2
2
) (
) (
Under reverse bias, minority carriers are collected into the quasi-
neutral regions of the diode.
Minority carriers generated within a diffusion length of the depletion
region diffuse into the depletion region and then are swept across the
junction by the electric field.





The negative current flowing in a reverse-biased diode depends on
the rate at which minority carriers are supplied from the quasi-
neutral regions.
Electron-hole pair generation within the depletion region also
contributes negative diode current.
Varactor Diode
Voltage-controlled capacitance
Used in oscillators and detectors
(e.g. FM demodulation circuits in your radios)
Response changes by tailoring doping profile:
2
1
+
=
m
n
bi
V V
for
V C
r
n
r j
>>

Tunnel Diode
Degenerately doped
such that E
Fp
< E
v

and E
Fn
> E
c
Exhibits negative
differential resistance
useful in high-speed
circuits
Tunnel Diode (contd)

Optoelectronic Diodes

L N P L
L
kT V q
G L W L qA I
I e I I
) (
) 1 (
A
0
+ + =
+ =
(
(

+ = =
|
.
|

\
|
+ |
.
|

\
|
+ +
=
1 ln
0
A L
n
L
p
L
L W L
q
kT
I
oc
G V V
p
n
n
n
p
p
n p
t t
Open Circuit Voltage, VOC

p-i-n Photodiodes
W ~ Wi-region, so most carriers are generated
in the depletion region
faster response time (~10 GHz
operation)
Operate near avalanche to amplify signal
Light Emitting Diodes (LEDs)
LEDs are typically made of compound semiconductors
(direct bandgap)
Organic LEDs
Some organic materials
exhibit semiconducting
properties
OLEDs are attractive for low-
cost, high-quality flexible
displays