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, Pt - 300 A
,
Au - 4500 A
.
Fig.2. Pattern design on Hall sensor
(a) Single device pattern for Hall sensor (b) Multi device mask
(a)
(b)
Single Hall sensor is separated by scribing the wafer along <110> planes. The single Hall
sensor is to be mounted on proper support for connecting it to the external circuitry. For the
present application sensors are mounted on circular PCB patterned in the way shown in Fig.3.
Wires to the contact pads are bonded with Silver epoxy curable at 150
O
C for connecting them
to signal processing circuit. The Hall sensor fabricated is then encapsulated in commercially
available epoxy resin curable at room temperature for easy handling.
The ohmicity of the contact is tested. Fig. 4 shows the V - I characteristics of the current
and voltage probes. The characteristic is linear indicating that the contacts are ohmic (hysterisis
= 0 very negligible). Slope of the graph gives the resistance between the contact pad. The
resistance between the current and voltage probes is observed to be the same of the order of
(= 50 - 60 O). This also is found equal to the calculated value. The dimensions and material
constants are o = 3 - 5 (O-cm), I = 4mm = 0.4 cm, A = 4 mm x 500 um = 0.4 x 0.05
221
(cm
2
), w = 4mm = 0.4 cm, t = 500 um = 0.05cm. Resistance between two electrodes
calculated from above given values using the formula R = o x I /A = 60 O which is well in
agreement with the measured value. The minor difference seen between the expected (60 O)
and observed resistance (between 50 - 60O) may be attributed to the deviation from the exact
value of the resistivity of the wafer, finite contact resistance and/or accuracy of measurements.
Once the contacts are proved to be ohmic, the Hall sensor is tested for hall characteristics.
The current in the range of 1 mA to 10 mA is passed through the current probes of sensor
and voltage is measured across the voltage probes in presence of magnetic field. Fig. 5 shows
Hall characteristics of the sensor. i.e. voltage across the voltage probes versus current through
the current probes. It is observed that in absence of magnetic field the sensor gives some
Fig.4. V-I Characteristic of contacts
(a) Offset voltage
(b) Hall voltage (B = 4.5 kgauss)
Fig.5. Hall characteristics
(a)
(b)
RPM measurement system using in-house developed Si based Hall sensor
222 S. R. Joshi and S. A. Gangal
output voltage called offset voltage (curve a in Fig.5). This is of the order of 0.2 - 1 mV.
This offset voltage may be thought to be developed because of the dimensions of the sensor,
resistivity of sensor, its magneto- resistance and the misalignment of the electrodes on the
sensor w.r.t. Si crystal planes. Further, when it is exposed to a magnetic field of 4.5 Kgauss
(rear earth magnet of diameter = 10 mm and length = 10mm) it gives Hall voltage of 0.2 mV
to 15 mV in the current range of 0 to 10 mA. From the graph it is clear that relation between
V> and I is linear in the given range of current. The offset voltage generated is sufficiently
less in magnitude as compared to Hall voltage. This is necessary for its application as a switch
for RPM measurement.
The developed sensors are tested for their stability over a longer time period of 24 hours.
It is observed that Hall voltage generated is very stable with the time at constant temperature.
Offset voltage is found to remain constant with temperature upto 55
C)
to 70
C. The changes in offset voltage and Hall voltage with temperature may be attributed
to the change in the mobility of majority carriers, which is the main cause of Hall effect,
with temperature.
3. RPM MEASUREMENT SYSTEM
These thoroughly tested Hall sensors are used for the measurement of rotation per minute
(RPM). Required signal conditioning circuit, counter display unit are designed and developed
in-house and the circuit developed is calibrated for RPM. Following paragraphs describe the
details of development of RPM measurement system for the in house fabricated sensors. The
specifications of the system are given at the end.
Fig. 6 shows the block diagram of RPM measurement system. It consists of Hall sensor,
rear earth magnet fitted on the wheel of the motor, constant current source, signal conditioning
unit and counter display unit. A magnet mentioned above, is attached to the wheel of which
RPM is to be measured. The distance between the magnet and the sensor is kept to be 3 - 4
mm. When measured with the gaussmeter magnetic field was found to be 4.5 Kgauss at the
Fig.6. Block diagram of RPM measurement system
223
surface of the magnet while it was 500 gauss at the surface of the sensor. This is expected
as magnetic field decreases with the increasing distance. As the magnet on the wheel passes
over the Hall sensor one gets a pulsating output riding over the offset voltage. In absence of
magnetic field, output of the Hall sensor is equal to offset voltage and in presence of magnetic
field (500 gauss), in addition to offset voltage, Hall voltage is generated. This pulsating output,
for a current of magnitude 5 mA passing through the Hall sensor, is of the order of 2 3 mV.
This is processed through a signal-conditioning unit (SCU) to make it TTL compatible. Now
the simplest technique to measure RPM is to measure these TTL compatible pulses in one
minute or a part of that. In the present work, pulses coming out of the SCU are sampled
during 1 sec for easy multiplication by 60. Number of pulses counted is shown on a four
digit seven segment display. RPM is this number multiplied by 60.
Fig.7. Circuit diagram of Signal conditioning unit
4. CIRCUIT DESCRIPTION
Circuit diagram of RPM measurement system is shown in Fig.7. Fig 7a shows the signal
- conditioning unit (SCU) and Fig 7b is a counter display unit. Output of the Hall sensor is
fed as input to SCU. First stage of differential amplifier (OPAMP 1) amplifies V
offset
+ V
Hall
.
OPAMP 2 is used in subtractor configuration to eliminate the offset voltage and amplify the
Hall voltage only. Voltage equal to offset voltage is given as reference to one of the inputs of
OPAMP 2. A 10 turn potentiometer is provided to adjust the reference voltage in order to
take care of variation of offset from sensor to sensor. It is adjusted to give output of OPAMP
2 equal to zero in absence of magnetic field. To make the pulsating output TTL compatible
one more stage of amplifier (OPAMP 3) is added. OPAMP 3 is used in comparator mode. It
compares the Hall voltage with zero and gives TTL compatible output.
RPM measurement system using in-house developed Si based Hall sensor
224 S. R. Joshi and S. A. Gangal
Output of the SCU unit is fed to the digital counter through opto-isolator in order to
separate the digital and analog grounds. Digital counter unit consists of sampling pulse (f=0.5
Hz) generator, sampling gate and counter and display Unit. Counter and display unit consists
of TTL ICs. The sampling pulse with T = 2 sec is generated using counter divider circuit.
For easy multiplication by 60, the sampling time is selected as 1 sec. Clock to the counter
circuit is derived using crystal oscillator of 5 MHz. This is then divided 10
7
times by using
seven decade counter ICs. The circuit is designed with T
on
= T
off
. The sampling pulse and the
output of the SCU are fed to the AND gate. The pulses coming out of the AND gate are
counted and displayed with the help of counter/display IC.
The control signals, Reset, Latch Enable and Display Select are generated. Latch Enable
and Reset signals are generated using Monostable Multivibrators MMV1 and MMV2. The falling
edge of the sampling pulse is given as trigger to MMV1. This is given as a Latch enable to
the counter. Output of MMV1 is fed as input to MMV2, which generates Reset pulse. Counter/
Display IC consists of a counter, driver and decoder. The outputs are internally multiplexed.
These are finally connected to 4 seven segment displays. The number displayed is the number
of pulses in one second. For RPM, this number is multiplied by 60.
The SCU is fabricated using surface mount devices and is mounted in a probe made
specifically for the RPM measurement. Fig.8 shows the completed probe. Counter/display
circuit is mounted in a metal box.
Fig.7b. Digital Counter Circuit
225
5. SPECIFICATIONS OF DEVELOPED SYSTEM
The designed circuit for RPM measurement is tested thoroughly. The system specifications
are given in following table.
Fig.8. Completed Hall sensor
RPM measurement system using in-house developed Si based Hall sensor
226
6. CONCLUSION
RPM measurement system using Si based Hall sensor has been successfully developed
in house.
REFERENCES
1. S. Middlehoek and S. A. Audet, Silicon sensors Academic Press, Harcourt Brace Jovanovich
Publishers.
2. R. Ghosalkar, S. Joshi, S. Gangal, Development of Si based Hail sensor - Study of effect of
electrode geometry on Hall voltage, Proceedings of SPIE, 1999, Vol. 3903, pp 171-175.
3. S. M. Sze, Physics of Semiconductor devices, Wiley Interscience Publication,1999
4. Peter Van Zant, Microchip Fabrication - A practical guide to semiconductor processing, -
Mc Graw Hill publication, 1997.
S. R. Joshi and S. A. Gangal
227
PREDICTING THE FAR-FIELD PATTERN OF DOLPH-
CHEBYSHEV LINEAR ARRAYS FROM NEAR-FIELD
DATA USING SCHEKLKUNOFF POLYNOMIALS
J. Subramanyam
Department of Electrical and Electronics Engineering, College of Engineering,
Sri Venkateswara University, Tirupati, India
ABSTRACT
The array factor of a linear array of N elements is a polynomial of degree (N-1) that has
(N-1) roots and can be expressed as a product of (N-1) linear terms each involving a
root of the polynomial. The roots of the polynomial correspond to the nulls of the pattern.
In this study, the number of nulls and their locations are obtained from the near-field
phase patterns and the far-field pattern is computed using the polynomial representation
of the array factor. Accuracy of the far-field pattern depends on the accuracy with which
the locations of the nulls are determined. Analytically and computationally this technique
is simple and fast. It is suitable only to linear arrays.
1. INTRODUCTION
Radiation pattern of an antenna is traditionally measured in the far-field region. However,
there are disadvantages
1
in measuring the pattern in the far- field. It is, therefore, desirable to
determine the far-field pattern from the data measured in the near-field. Number of exotic
techniques are available
2, 3
to transform the near-field data to the far-field and hence obtain
the far-field pattern. Objective of this paper is to explore the possibility of using
Schelkonoff
4
polynomials for the nearfield-to-farfield transformation of Dolph-Chebyshev linear
arrays. Dolph-Chebyshev linear arrays are chosen, because, they are known to give optimum
FNBW-SLL performance. The nearfield data required for studying the transformation technique
is simulated.
2. SCHEKLKUNOFF POLYNOMIALS
Schelkunoff has shown that the array factor of a linear array of N elements can be
represented as a polynomial of degree (N-1). Any polynomial of degree (N-1) has (N-1) roots
and can be expressed as a product of (N-1) linear terms each involving a root of the
polynomial. The roots of the polynomial correspond to the nulls of the array factor pattern.
Thus, knowledge of the number of nulls and their locations permits the calculation of the
pattern. If the information about the number of nulls and their locations can be obtained from
J. Instrum. Soc. India 32 (3) 227-235
228 J. Subramanyam
the near-field measurements, then the far-field pattern can be computed using the polynomial
representation of the array factor.
Array factor, for a linear array of N isotropic sources placed along the z-axis, is
N
AF= _ a
n
z
n-1
=a1+a2z+a3z2+.+a
N
z
N-1
(1)
n=1
where
z = e
ju
.(2)
u = 6d cos 0 + o .....(3)
In the above expressions, a
n
is the non-uniform amplitude excitation of each element, d
is the inter-element spacing, and a is the progressive phase shift.(1) is a polynomial of degree
(N-1). Any polynomial of degree (N-1) has (N-1) roots and can be expressed as a product of
(N-1) linear terms. Thus (l)
can be written as
AF = ( z z
1
) ( z z
2
) ( z z
3
).... ( z z
N-1
) ..(4)
where z, z
1
, z
2
...., z
3
, are the roots, which may be complex, of the polynomial.
As can be seen from (4), the array factor of any linear array can be computed if the
locations of the nulls (roots) of the pattern (polynomial) are known. The location of the nulls
may be obtained from the near-field data and substituted in (4) to obtain the far-field pattern.
3. DOLPH-CHEBYSHEV ARRAY
The Dolph-Chebyshev array considered in this study is shown in Fig.1. Salient features
of this array are:
Fig. 1. Dolph-Chebyshev array of (2N+1) point dipoles
229
The elements are placed symmetrically about the origin along the z-axis.
The interelement spacing is uniform.
All the elements are excited in phase.
Current distribution is symmetrical about the origin.
Excitation coefficients of the array are computed using the Nested product Algorithm
given by Bressler
5
. The radiated field component due to the array, at the field point P, is
computed by taking the phasor sum of the field components, due to individual elements, at
point P. The rectilinear field components due to a current element, in its nearfield, are given
in the Appendix.
4. RESULTS
In this study, radiation patterns are computed at 0.5, 1.0, 1.5, and 2.0 D
2
/ l distances
from a Dolph-Chebyshev array with the following specifications:
Type of element = Point dipole
Length of the array, D = 50 /
Inter-element spacing, d = / / 2
Number of elements, P=2N+1 = 101
Side lobe levels, SLL = -30db
Field pattern : E
= E
y
Pattern cut : = 0 plane
The computed patterns are shown in Fig.2. Behavior of these patterns may be explained
as follows: The deviation of the phase of the incident wave over the aperture of the test antenna
Fig. 2. Range length effect on 30dB Dolph-Chebyshev pattern of 101 element array
Predicting the Far-Field Pattern of Dolph-Chebyshev Linear Arrays
230 J. Subramanyam
is known as the phase taper. As the distance to the source antenna decreases, the phase taper
across the aperture of the test antenna increases. It may be observed from Fig.2, that, as the
phase taper is made more severe as a result of reducing the range length, the first side lobe
on either side of the main beam begins to merge with the main beam, thereby forming a
shoulder lobe. Further reduction in range length causes successive side lobes to merge with
the main beam. It may also be observed that, at a range length of 2D
2
//, the errors on the
second and third side lobes are significantly less than the error on the first side lobe. This
means that for low side lobe arrays, the range length of 2 D
2
// can still be used to measure
wide angle side lobes accurately at the expense of losing the first one or two side lobes.
Therefore, the first few nulls next to the main beam are not fully formed in the near-field
and hence cannot be located from the magnitude pattern. Therefore, it may be instructive to
examine the phase pattern for clues about the locations of the nulls. With this objective, the
phase pattern corresponding to the amplitude pattern of Fig.2 for r = 1.5 D
2
/ /, is shown
plotted in Fig.3.
Fig. 3. Phase pattern of Dolph-Chebyshev array
From Fig.3, it may be observed that the phase pattern makes steep excursions between
20 and 160 (corresponding to a phase shift of 180) at the locations of well defined nulls.
In the region 88 : q : 90 the has pattern changes gradually from about 140 to 0 . This
is the region wherein the first null has completely merged with the main beam (Fig.2).
Therefore, the phase pattern in this region requires a closer study.
Phase patterns in the region 88 : 0 : 90 for different range lengths are shown in
Fig.4. This figure clearly shows the transformation of the phase pattern as the range length
increases towards far field values. The most interesting feature is that all the curves, for R up
to 10 D
2
//, intersect at 0 = 88.4. This is the point of inflexion where the curves exhibit a
change in slope. This point gives the location of the first null. Therefore, plotting the phase
231
patterns for at least two values of range length R and finding the point of their intersection
may locate the missing null.
Table 1 gives the 1ocations of all the nulls. As the locations of all the nulls, including the
first null, are known, the far-field pattern is computed using (4). This pattern is shown in
Fig.5.
Fig. 4. Phase patterns at different range lengths
Predicting the Far-Field Pattern of Dolph-Chebyshev Linear Arrays
232 J. Subramanyam
233
5. CONCLUSIONS
It may be inferred, from a comparison of the reconstructed pattern (Fig.5) with the true
far-field pattern (Fig.2), that this transformation technique successfully predicts the far-field
pattern. Analytically and computationally this technique is simple and fast. It is suitable only
to linear arrays since non-linear arrays and continuous aperture antennas cannot be modeled
by Schelkunoff polynomials. Multiple scans are required in the near-field because; the locations
of the nulls cannot be determined with a single scan. The accuracy of the predicted far-field
depends on the accuracy with which nulls can be located. In this respect, there is a limitation
since the null locations are determined graphically.
REFERENCES
1. R.C. Johnson, H.A.Ecker, and J.S. Hollis, Determination of far-field antenna patterns from
near-field measurements, Proc.IEEE, 61, 1668-1694 (1973).
2. A.D. Yaghjian, An overview of near-field antenna measurements, IEEE Trans.Antennas
Propagat., 34, 30-45 (1986).
3. J.A. Hansen, E.S.Gillespie, T.G.Hickmann, and J.D.Dyson, Antenna measurements in The
handbook of antenna design, A.W. Rudge, K. Milne, A.D. Olver, and P. Knight, Eds, Second
edition, Peter Peregrinus Ltd., London (1986).
4. S.A. Schelkunoff A mathematical theory of linear arrays, BSTJ, 22, 80-107 (1943).
5. A.D. Bressler, A new algorithm for calculating the current distribution of Dolph-Chebyshev
arrays, IEEE Trans.Antennas Propagat., 28, 951-952 (1980).
Fig. 5. Far-field pattern when the missing null is predicted at 88.39
Predicting the Far-Field Pattern of Dolph-Chebyshev Linear Arrays
234 J. Subramanyam
235 Predicting the Far-Field Pattern of Dolph-Chebyshev Linear Arrays
236
237