EEE 413 : CT-3 : Solution

Bangladesh University of Engineering and Technology Class Test #3 Full Marks: 20 Time: 25 minutes Q1. The charge profile of a MOS structure is shown in the following figure: +Q
Metal Oxide tox=100 Semiconductor

-Q i) ii) iii) iv)

Find its region of operation (accumulation/depletion/inversion). (3) Sketch the corresponding band diagram using arbitrary units. (3) Sketch the electric field distribution using arbitrary units. (3) Assume that the MOS structure consists of aluminum (work function= 4.28eV), SiO2 (electron affinity = 0.76eV, dielectric constant =3.9) and silicon (electron affinity = 4.01eV). If the doping density of the substrate is 1016/cm3 find the flat band voltage and draw the band diagram corresponding to this voltage. (5)

Q2. A metal-semiconductor junction is formed by depositing tungsten (work function = 4.45eV) on a silicon substrate (electron affinity = 4.01eV). Find the criteria of doping so that the junction acts as i) a Schottky contact, ii) an ohmic contact. (6) Ans 1. i) ii) According to the charge profile, the region of operation can be accumulation. [As the semiconductor charge is positive in accumulation, the substrate is ptype.] Band diagram in accumulation: eVOX em e es EFm eVg Eg/2 EC EFi EFs EV

iii)

Electric field profile: E(x)

Metal Semiconductor

iv)

m=(m-i) = (4.28-0.76) V = 3.52V =(-i) = (4.01-0.76) V = 3.25V Na = 1016/cm3 p0 Na= niexp(p/Vt) p= Vt In(Na /ni) =0.0259In(1016/1.51010) V = 0.347V At flat band condition, s= 0; Flat-band voltage, VFB = ms - Qss/COX = ms [Qss=0 from the charge profile] = m-(+ Eg/2e+ p) = 4.28V- (4.01+1.12/2+0.347) V = -0.637V VOX = -Qss/COX = 0; 3.52eV EFm 3.25eV 0.347eV EC EFi EFs EV

0.637eV

0.56eV

Ans 2. Assuming the semiconductor is n-type we have, ms =m-(+ Eg/2e- n) For ms>0, the contact is Schottky. For ms<0, the contact is ohmic. ms=0 for m-(+ Eg/2e- n) =0 4.45-(4.01+1.12/2- n) = 0 n = 0.12V Nd= n0 = niexp(n/Vt) = 1.51010 exp(0.12/0.0259) = 1.5431012/cm3 If Nd> 1.5431012/cm3, ms>0, the contact is Schottky. On the other hand, if Nd< 1.5431012/cm3, ms<0, the contact is ohmic. Considering p-type semiconductor, we have, ms =m-(+ Eg/2e +p) For ms<0, the contact is Schottky and for ms>0, the contact is ohmic. But ms=0 for p = -0.12V, which is not possible. So for p-type semiconductor ms is always <0, the contact is Schottky for all doping concentration.