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модуль драйвера мд280п-ь

Modern IGBT drivers and high-power field-effect transistors
The article is devoted to development of "Electrum AV" for industrial use, with characteristics similar to a modular instrument
and production Semikron CT Concept.
Modern power electronics development concept, the level of technological basis of modern microelectronics cause the active
development of systems based on IGBT-devices with different configurations and capacities. The state program "National
Technological Base" this area are dedicated to two works on the development of a series of medium-power IGBT-modules in the
enterprise "Kontur" (Cheboksary) and a series of high-power IGBT-modules in the enterprise "Silicon" (Bryansk). At the same
time, the use and development of on IGBT-modules is limited by the lack of national systems of driver devices for controlling the
gates of the IGBT. This issue is also relevant for high-power field-effect transistors used in the converter with a voltage systems up
to 200 V.
Currently, the Russian "electronic" market powerful field controller and IGBT-transistors represented companies Agilent
Technologies, IR, Powerex, Semikron, CT Concept. Products IR and Agilent contain only forming apparatus for transistor thief
control signals and the protective circuit and need when working with transistors of high power or at higher frequencies for its use
of additional elements: DC / DC-converter is required power for generating the supply voltages of the output stages, powerful
external output stages for generating gate control signals with the requisite steep fronts protective elements (diodes, diodes, etc.),
the control system interface elements (the input logic, the formation of the half bridge control devices diagrams optically decoupled
status signal state controlled transistor, supply voltage etc.). Powerex company's products also require a DC / DC-converter, and
additional external components are required to align with TTL, CMOS, and fiber optic links. Also lacks the necessary status
signals with galvanic isolation.
Most drivers are functionally complete Semikron firms (series SKHI) and CT Concept (Standart types or SCALE). Drivers CT
Concept Series Standart and SKHI driver is arranged in videpechatnyh board with connectors for connection to the control system
and the control transistor fitted with the necessary elements and with the possibility of adjusting elements of the
consumer. According to its functional and parametric features of the product are similar.
SKHI drivers nomenclature is given in table 1.
Table 1. Nomenclature drivers SKHI
company driver Koli-honors
Eg Mach-zhenie to
type Semikron Kan-fishing control.tranzis-torus, B

Serpent-tionMax
tion eg gate,
imp.O.current, A
The

Max gate
charge,
SCLC

Frequency
kHz

Ex-zhenie
Isola tion,
kV

DU / dt, kV /
microsecond

SKHI 10/12

1

1200

15 + / -8

8

9.6

100

2.5

75

SKHI 10/17

1

1700

15 + / -8

8

9.6

100

4

75

SKHI 21A

1

1200

+ 15 / -0

8

4

50

2.5

50

SKHI 22A / 22B

2

1200

+ 15 / -7

8

4

50

2.5

50

SKHI 22A / H4

2

1700

+ 15 / -7

8

4

50

4

50

SKHI 22B / H4

2

1700

+ 15 / -7

8

4

50

4

50

SKHI 23/12

2

1200

15 + / -8

8

4.8

100

2.5

75

SKHI 23/17

2

1700

15 + / -8

8

4.8

100

4

75

SKHI 24

2

1700

15 + / -8

8

5

50

4

50

SKHI 26W

2

1600

15 + / -8

8

10

100

4

75

SKHI 26F

2

1600

15 + / -8

8

10

100

4

75

SKHI 27W

2

1700

15 + / -8

thirty

thirty

10

4

75

SKHI 27F

2

1700

15 + / -8

thirty

thirty

10

4

75

tranzis-torus. providing the necessary levels of coordination of current and potential signals. MD180 (MD115P. kV / microsecond entrance Vols Vols Vols In this paper will be presented MD115 devices. Nomenclature of basic drivers of hybrid assemblies SCALE company CT Concept is presented in Table 2. with the possibility of adjusting the required elements.SKHI 61 6 900 + 15 / -6. which are mounted on the circuit board. MD150. A Ex.5 1200 1 60 4000 > 50 Trance IHD 280A 2 ± 15 ±8 1200 1 60 4000 > 50 Trance IHD280A1 17 2 ± 15 ±8 1700 1 60 4000 > 50 Trance IHD 680A 2 ± 15 ±8 1200 3 60 4000 > 50 Trance IHD680A1 17 2 ± 15 ±8 1700 3 60 4000 > 50 Trance IHD 580 F 2 ± 15 ±8 2500 2. Ex-zhenie pit-of-drei term current..outputthe onOut-of-tion Latency. Driver unit production of "Electrum AV" are completely finished. In faith in B IGD 508E 1 ± 15 ±8 3300 5 225 5000 IGD 515E 1 ± 15 ± 15 3300 5 225 5000 IGD 608E 1 ± 15 ±8 1200 6 60 4000 > 50 Trance IGD608A1 17 1 ± 15 ±8 1700 6 60 4000 > 50 Trance IGD 615A 1 ± 15 ± 15 1200 6 60 4000 > 50 Trance IGD615A1 17 1 ± 15 ± 15 1700 6 60 4000 > 50 Trance IHD 215A 2 ± 15 ± 1.5 15 SKHIVS 01 7 1200 15 + / -8 15 0. MD280P) for the half-bridge control devices. and delays. funktsionalnopolnymi devices. as well as the necessary protection levels controlled transistors with dangerous levels of saturation voltage (overcurrent or short circuit) and insufficient gate voltage.5 2 1 50 2.5 15 Drivers SCALE company CT Concept are based on the basic hybrid assembly and incorporate the key elements to control the powerful field or IGBTtranzistorami. MD180P) to control single transistors and MD215. . The applied DC / DC-converters and transistor output stages have the necessary capacity to ensure controlled switching transistors of any power with a sufficient rate to provide minimal switching losses. The board is also equipped with the necessary connectors and sockets. MD150P. The range of base drivers of hybrid assemblies SCALE CT Concept firms company driver type CT Concept Kolihonors Kanfishing Max voltage of Ex-zhenie Max imp.75 20 2. Table 2.5 2 1 50 2. cardinality W ns insulation. MD250P.5 15 SKHI 71 7 900 + 15 / -6. DC / DC Converters and opto-coupler have sufficient levels of galvanic isolation for use in high-voltage systems.5 200 5000 du / dt. rise time. containing all the necessary elements to control the gates of the power transistors. MD280 (MD215P. MD250.

.

.

MD180P contain an embedded DC / DC-converter for power driver output stages. Pin assignment 1 . . IA280I MD215 driver modules. MD115P. MD215P."exit" . MD180. MD115P. and the availability of food."+ E pit" 9 ."Current" . With the help of external elements driver mode is configured for optimal management of different types of transistors. both independently and in a half-bridge is turned on. MD280P . MD150.hybrid integrated circuit for controlling the IGBT and powerful field-effect transistors on two channels. MD150P.control input saturation voltage controlled transistor 12 .the transistor gate control 10 . Driver contains internal DC / DC-converters."entry -" 5 . MD180P . MD250. undervoltage level of the transistor gate. MD150.control input current flowing through the driving transistor Modules are two-channel IGBT driver and powerful FETs IA215. MD180. With the help of external elements driver mode is configured for optimal management of different types of transistors. including the parallel connection of transistors. The driver provides the coordination for current and voltage levels with the majority of the IGBT and the high-power field-effect transistors with maximum permissible voltage up to 1700 V.single-channel IGBT driver module and powerful field-effect transistors: MD115."alarm +" 2 ."Input +" 4 . For MD115 devices. MD280."eg" . MD250P. The device generates the necessary status signals indicative of operation Transistor moat. IA280. IA250I."-E pit" 11 . protection against overload or short circuit. driver inputs are galvanically isolated from the power section with a voltage of 4 kV of isolation. IA250. protection against overload or short circuit."accident -" 3 . MD180 requires an external isolated power supply. which form the necessary levels to control the gates of transistors. MD150P."the U pit -" (only models with the suffix "P") 7 . The module provides the coordination through the levels of currents and voltages with the majority of the IGBT and the high-power field-effect transistors with maximum permissible voltage up to 1700 V.«U pit +" (only models with the suffix "P") 6 . including in the case of parallel connection."General" 8 . MD150. ID180P MD115 driver module.hybrid integrated circuit for IGBT control and powerful field-effect transistors. MD150P. the insufficient level of the gate voltage of the transistor. IA215I. The driver generates a signal "accident" in violation of the mode of operation of the transistor. The driver can be used to control transistors with "Kelvin" outputs or current control using a current sense resistor. Devices MD115P.

Key findings of the two-channel IGBT driver module and powerful field-effect transistors Number CONCLUSIONS. designation Function Number CONCLUSIONS.Table 4. designation Function 14 INP1 "+" Direct control input of the first channel 15 IR Measuring collector saturation voltage control on controlled transistor of the first channel 13 INP1 "-" Inverse control input of the first channel 16 SG 1 control saturation voltage input to the setting of the threshold and the first channel blocking time 12 ST "E + pit" The status of the output stage supply voltage pervogokanala 17 Out2 The output of the transistor gate control with adjustable switching time of controlled transistor of the first channel eleven Cs Entrance to connect the additional capacitor (setting delay time) of the first channel 18 Out1 The output of the transistor gate control with adjustable time vyklcheniya managed the first channel of the transistor 10 CT Status output accident on controlled transistor of the first channel 19 -E pit The voltage output of the power supply of the first channel driver 9 BLOCK Login lock 20 Gen. The voltage output of the power supply of the first channel driver not used 21 +E The voltage output of the power supply of the first channel driver Entrance to connect the power input circuit 22 Entrance to connect the power input circuit 23 In2 "+" Direct control input of the second channel 24 In2 "-" Inverse control input of the second channel 25 Out1 ' The output of the transistor gate control with adjustable switching time of controlled transistor of the second channel The status of the output stage supply voltage of the second channel 26 Out2 ' The output of the transistor gate control with adjustable switch-off time of controlled transistor of the second channel 8 7 + 5V 6 5 4 " E+ pit pit ' The voltage output of the power supply of the second channel driver Tot ' -E Pit The voltage output of the power supply of the second channel driver ' The voltage output of the power supply of the second channel driver 3 ST "E + 9 2 Sz9 Entrance to connect the additional capacitor (setting the switching delay time) of the second channel 27 SG 1 ' control saturation voltage input to the setting of the threshold and the second channel blocking time 1 ST9 Status output accident on controlled transistor of the second channel 28 IR ' Measuring collector saturation voltage control on controlled transistor of the second channel pit .

also developed Ltd. Max.0 Output average current. TTL Management inputs current. min.1 milliohms and up to several facilities in the tens or hundreds of watts. A MD215 not more than 1.0 MD280 not more than 8. mA 40 . mA at least 10 Output circuit Peak output current. with the required dynamic parameters provide control voltages and the protection transistor gates in case of insufficient or excessive stress on them. 4.5 MD250 not more than 5. Both types of devices controlled saturation voltage controlled transistor and produce a smooth emergency load shedding in critical situations. mA not more than 0.orel. The less than 15 The output current at the output of Art.5 5 18 Current consumption. a type. In addition to these features MD1HHH series devices have the ability to control the current through the transistor is controlled by an external current-measuring resistor . "Electrum AV". forming a signal optically isolated.ru/voloshin . More information about them can be found on the site www. The main electrical parameters The input circuit Power Supply. made on ceramic substrates in the form of bands Nichrome or manganin exact geometry fitting denomination. These resistors have a resistance of 0."shunt". signals this. Table 5.5 The output voltage of Art.Both types of devices and MD1HHH MD2HHH ensure formation transistor gates control signals with adjustable separately the value of charge and discharge currents. mA not more than 80 with no load of not more than 300mA to the load Input logic CMOS 3 -15 V.

Maximum switching frequency. 6 6. V at least 15 Power. ms less than 1 Delayed tripping t off. 10. Ct ') Response saturation voltage protection circuit time when the transistor is turned on tblok. a type.4 eleven 11. Max.5 Delay on the status ms less than 1 Recovery time after tripping. protection threshold for under-E Supply. kV / microsecond at least 50 Maximum voltage on controlled transistor. in at least 1200 DC / DC converter The output voltage. . W at least one of at least six (for models with index M) efficiency not less than 80% dynamic properties Delay Input Output t on. In Still DC 3000 Offered drivers allow you to control transistors with a high frequency (100 kHz) that allows us to achieve a very high efficiency of conversion processes. kHz no less than 100 The rate of change of voltage. ms to 10 <Internal delay switch on the upper and lower transistors t ass. ms / td> at least 1 (specified containers Ct.5 7 Insulation Isolation voltage control signal power with respect to the signals in not less than 4000 AC Insulation voltage DC / DC converter.7 Protection circuit saturation voltage controlled transistor provides the output off and form a tion PT signal at the voltage on the "IR" includes. ms not more than 0. ms at least one Threshold voltage min.

to open transistor. . MD250. MD280. Driver MD2HHH series modules represent a complete solution for control and protection issues for IGBT and high-power fieldeffect transistors. MD280P .  gate control circuit transistor. Due to the high noise immunity. Act Changing the driver output voltage from +18 to -5 V. MD215 driver modules. MD280. or multiple parallelconnected transistors are used at high frequencies. which ensures the absence of cross-currents. several field or IGBT-modules can be connected in parallel without the possibility of spurious switching action and vibrations.universal control modules for switching IGBT and powerful field-effect transistors.  amplifier. MD250P.  electrical isolation between input circuit and power (output) part. depending on the control signal can reliably control the IGBT-modules of any power and from any manufacturer.MD2HHH series devices have built-in power input logic. which allows control signals with different values from 3 to 15 (CMOS) and standard TTL levels. MD250P. MD280P well suited for most modules. no additional components are required in the audio input or the output side. MD280P for each of the two channels contain:  input circuit that provides signal conditioning levels and protective switching delay. while ensuring an identical level of transistor gates control signals and creating a customized using external capacitors duration of the switching delay of the upper and the lower half-bridge arm. MD250. MD215P. MD types with higher capacities . In fact.MD250. MD215P. MD280. All types MD2HHH have mutually compatible contacts and differ only in the level of the maximum pulse current.  the voltage level control circuit of the power supply driver. MD250P. Features of the application drivers on the example MD2HHH device Short review MD215 driver modules. achieved by using a negative control voltage.

undertaken with the help of transformers and optocouplers (subjected to the test voltage of 2650 V AC.Converter DC // DC (only for modules with the index n) Both channel drivers operate independently of each other. upon application of a logic 1 is the opening of the power transistor and feeding 0 .After that. and on input INP1 "+" performed its management. Table 6. that is. as well as an extremely high rate of voltage increase . If the threshold is exceeded. the transistor can be switched on again applying the active level to the control input. Emergency transistor state is determined by the voltage at the collector of the power transistor open. Due to electrical isolation. The state diagram of one channel driver In1 + Vh1- The voltage on the gate of the transistor <rules The saturation voltage of the transistor> rules Article Article "E +pit " O X X + X X L L x x x + l H l l x x x x H l x H x x x H l H l - - H H H The input circuit has a built-in protection. and when applying 1 .closing it.  electrically isolated voltage source .its opening. the power transistor is turned off and remains locked until the end of the active level of the signal at the control input. inputs INP1 "+" and INP1 "-" can be connected to the control circuit and . there will be the blocking scheme. Electrical isolation between input and output part of the driver on these findings by using optocouplers. And conductors must go hand in hand. Usually INP1 "-" is connected to a common conductor input of the driver. Inverting and noninverting driver switch is shown in Figure 10. upon application of a logic 1 occurs the closing of the power transistor.30 kV / microsecond. and both the power transistor will be closed.Input INP1 "+" is direct. Functional purpose of outputs Conclusion 14 (INP1 "+"). Controlled by serving them the TTL logic levels. Thanks to the extremely short time delay. Table 6 shows the state diagram of the driver channel. a user-defined. One of the main functions of a number of drivers MD2HHH . Input In1 '+' and In1 '-' may be connected with the conductors and the control circuit controls a length of 25 cm. that is. In addition. If the control inputs of both channels to apply active control signal. This protection concept is widely used for reliable protection of the IGBT-transistors. they guarantee trouble-free operation under the management of the bridge. protection against voltage surges in the output driver portion. Very short delay times of a number of drivers MD2HHH allow their use in high-frequency power supplies. driver modules must be located as close to the power transistors and connect with them as short conductors. 50 Hz for 1 min.guarantee reliable protection of controlled power transistors against short circuit and overload. Input INP1 "-" is inverted. which excludes the opening of both IGBT half-bridge at the same time.Their use is excluded the possibility of exposure to transients occurring on the power transistor in the control circuit.) Between the input circuit and the power unit. 13 (INP1 "-") Conclusions 13 and 14 are control inputs of the driver. driver modules are used in schemes with high potential voltages and large potential jumps occurring between the power unit and the control circuit (control). high-frequency converters and resonance converters.

01.an accident. Conclusion 12 (ST "E + pit") Pin 12 is a status output. to prevent the occurrence of through currents in the unit under the joint management of channels. Conclusion 11 (Cs) Derivation 11 connects an additional capacitor. so on pulses shorter than 1 microsecond driver does not react (Surge Protection). Logic high level at the output corresponds to the normal operation of the driver and low level . confirming the presence of power (+18 V) to the output (power) of the driver. Conclusion 10 (ST) Pin 10 is a status output of the accident at the power transistors of the first channel.control via twisted pair. With the introduction of this delay. the two driver channels loaded to half-bridge. therefore.supply voltage. the emergency will match the high level of stress on it (+5). Through currents cause heating of the power transistors. The required delay time. degrade the efficiency of the scheme. where U . In normal operation the driver (and sufficient available power level it) a status output terminal connected to a common control circuit via transistor open. hence. To reduce the effect of ambient temperature on the time delay is necessary to choose capacitors with low TKE. A common conductor to the input circuit must always be supplied separately to both channels for reliable transmission of control pulses. the entire configuration must be checked in case of a short control pulse minimum. pF 1 0 2 510 3 1200 For example. increase current consumption.Normal operation the driver will meet the low level voltage in this a statutory withdrawal. Taking into account that a reliable transmission of control pulses occurs in the case of very long pulse. If this status the output plug on the circuit shown in Figure 11. R resistor value is calculated according to the formula R = U / 0. The accident occurs in case of exceeding the saturation voltage .He assembled the circuit with open collector. The main purpose of this delay is to eliminate the occurrence of through currents in the half-bridge. By reducing the power supply voltage drops below 12 V is switched off the power transistor and the lock of the driver. scram. ms Installed capacity. the module 150 has 2MBI delay shutdown 3 microseconds. can be controlled with one signal in the form of a meander. which increases the time delay between input and output pulse tOn on the driver. it is necessary to put an additional capacity of at least 1200 pF on both channels. Typical value of current flowing through the output status corresponding to 10 mA. By default (without the additional capacitor) this time exactly 1 microsecond.

across the power transistor threshold. Pin 9 (UNIT) Pin 6 is the control input of the driver. When submitting to it a logical unit of work occurs driver blocking and blocking voltage supply to the power transistors. For normal operation. The maximum current flowing through the output is 8 mA. lock entrance is common to both channels. the driver needs to be supplied .

2) and 18 (OUT 1) Conclusions The 17 and 18 are the driver outputs. the driver is the capacitance C = 100 pF.voltage drop across the diode is open. The cathode of the diode is connected to the collector of the power transistor. . Operating time can be adjusted by 16 O-SG 1.5 V. In the event of overload or short-circuit voltage of the transistor to open sharply. They are designed to connect the power transistors and adjust the time of their inclusion. which determines the defense saturation voltage transistor operation in the open. Conclusions 7 (+5 V). and 6 (general) Conclusions 6 and 7 are inputs for power supply to the driver. By connecting the capacitor protection operation time increases in proportion to the capacity of the lock t = 4 U With us. pore where C -. in contrast to the output 15 has no built-in diode and limiting resistor. you must install an additional diode breakdown voltage of not lower than 1000 V.VD.2) occurs positive potential supply (+18 V) to the gate of a control module and on terminal . capacitance pF. this time can be increased by connecting the capacitance between the output 16 and the common power wire of the power unit. the U pr. is necessary therebetween as close as possible to the driver to put the antiinterference capacity (ceramic capacitor of 0. Power is supplied from a source 8 W and an output voltage of 5 ± 0. Power supply must be connected to the driver conductors short (to reduce losses and increase noise immunity).3 + t off (10%) = 5. Conclusion 15 (IR) The output 15 (measured collector) is connected to the collector of the power transistor.the number of diodes. shown in Figure 7. where n .5 ms. Then 7 = -n U pr. By default. Conclusion 16 (SG 1) Conclusion 16 (measurement collector).1 microfarads). the threshold saturation voltage U us. It is necessary to connect the capacitor. thus tripping delay of t = 4100 6.VD . After it is done in the open voltage control transistor.to this input a logic zero. Conclusion 17 (chan. This time is added to the internal delay time t off drivers (10%) = 3 ms. In case the connecting conductors have a length of 25 cm. Timing diagrams of processes occurring in the driver when the protection is activated. If the power transistor is powered from a source 1700. This delay is necessary in order to eliminate the influence of noise on the circuit. protection threshold can be reduced by connecting the series of interconnected diodes. If necessary. Pin 8 is not used. Upon exceeding the threshold voltage value at the collector of transistor occurs locking power transistor and triggered status ST accident. In conclusion 17 (chan.

Figure 16 shows the equivalent input circuit module. If you need to tighten the edges or restrict current control (in the case of high load). max =  the U / According to the results of calculations can be made to select the most optimal driver needed to control power module. In the case of the need for tight control of the fronts (about 1 ms) and very high power load (two modules 2MBI 150 in parallel) is permissible direct connection of these outputs to the control terminal module.the negative potential (-5 V). . If the initial data set to the charge Q Q Rin /  U. Knowing the resistance of the R-limiting resistor.18 (OUT 1) . you can find a pulse current flowing through the driver: I of the R. the scope of the input voltage of the module. The operating frequency and voltage swing at the input of the module in the calculations take the maximum. MD250. and reactive power allocated to the input capacitance Pc module: P = P + O Pc. therefore.) And 21 (+ E pit) Conclusions 19. without built-in DC / DC-converters here to connect an external power supply 19 output of -5 V.total 21 18 In conclusion to the current up to 0. the input resistance of the module R Rin. it is necessary to recalculate it to the equivalent input capacitance C of I = Reactive power is allocated to the input module capacity is calculated according to the formula Pc = f Q Rin  U. The Total power DC / DC-converter driver P is made up of the power consumption of the output stage driver Pout. These findings supplied voltage DC / DCconverter driver. the modules must be connected to terminals 17 and 18 through the limiting resistors. In case of exceeding the threshold voltage saturation occurs protective smooth voltage drop at the gate of the control transistor. Smooth reduction of the output voltage is necessary in order to eliminate the possibility of a power surge. time by reducing the voltage to the level of the gate of transistor 90% t off (90%) = 0. 20 and 21 are the outputs of the power supply of the driver.2 A. Need to find a pulse current flowing through the control module Imax input. the maximum operating frequency at which the module works f max.5mks to a level of 10% t off (10%) = 3 ms. which consists of a gate capacity and limiting resistor. 20 (Tot. Calculation and selection of drivers Initial data for calculation is the input capacitance of the module with the I or equivalent charge Q Rin. U = 30 (given in the background information on the module). maximum output DC / DC-converter P. MD280. 20 conclusion . Conclusion 19 (-E pit). received the maximum possible during normal operation of power DC / DC-converter driver. In the case of type MD215 drivers. The Rin .