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  • Product Overview: MJ11033: 50 A, 120 V PNP Darlington Bipolar Power Transistor

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    This document summarizes an MJ11033 50A, 120V PNP Darlington bipolar power transistor. Key specifications include a continuous current rating of 50A, breakdown voltage of 120V minimum, saturation voltage of 2.5V maximum, and high current gain from 1000 to 400 minimum depending on current. The transistor provides diode protection up to its rated current and is available in TO-204-2 and TO-3-2 packages.

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    This document summarizes an MJ11033 50A, 120V PNP Darlington bipolar power transistor. Key specifications include a continuous current rating of 50A, breakdown voltage of 120V minimum, saturation voltage of 2.5V maximum, and high current gain from 1000 to 400 minimum depending on current. The transistor provides diode protection up to its rated current and is available in TO-204-2 and TO-3-2 packages.

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    © All Rights Reserved
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    12 views1 page

    Product Overview: MJ11033: 50 A, 120 V PNP Darlington Bipolar Power Transistor

    Uploaded by

    cezi
    This document summarizes an MJ11033 50A, 120V PNP Darlington bipolar power transistor. Key specifications include a continuous current rating of 50A, breakdown voltage of 120V minimum, saturation voltage of 2.5V maximum, and high current gain from 1000 to 400 minimum depending on current. The transistor provides diode protection up to its rated current and is available in TO-204-2 and TO-3-2 packages.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
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    Product Overview

    MJ11033: 50 A, 120 V PNP Darlington Bipolar Power Transistor


    For complete documentation, see the data sheet

    Product Description
    These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.

    Features
    High DC Current Gain hFE = 1000 (Min) @ IC = 25 Adc
    hFE = 400 (Min) @ IC = 50 Adc
    Curves to 100 A (Pulsed)
    Diode Protection to Rated IC
    Monolithic Construction with Built-In Base-Emitter Shunt Resistor
    Junction Temperature to +200C
    Pb-Free Packages are Available

    Part Electrical Specifications


    Product

    Compliance

    Status

    Polarity

    IC
    Continuous
    (A)

    V(BR)CEO Min
    (V)

    VCE(sat) Max
    (V)

    hFE Min (k)

    hFE Max (k)

    fT Min (MHz) Package


    Type

    MJ11033G

    Pb-free

    Active

    PNP

    50

    120

    2.5

    18

    For more information please contact your local sales support at www.onsemi.com
    Created on: 6/23/2016

    TO-204-2 /
    TO-3-2

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