55NF06

Pb Free Plating Product

55NF06

Pb

N-CHANNEL POWER MOSFET TRANSISTOR

50 AMPERE 60 VOLT
N-CHANNEL POWER MOSFET

12

DESCRIPTION

ThinkiSemi 50N06 is three-terminal silicon device with current

conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.

SYMBOL
U55NF06
P55NF06
F55NF06
D55NF06

TO-220/TO-220F

FEATURES

* RDS(ON) = 23m@VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability

12

TO-251/IPAK

TO-251/IPAK
TO-220
TO-220F
TO-252/DPAK

12

APPLICATION
Auotmobile Convert System
Networking DC-DC Power System
Power Supply etc..

TO-252/DPAK

2.Drain

1.Gate

3.Source

ABSOLUTE MAXIMUM RATINGS

PARAMETER

RATINGS
UNIT
60
V
20
V
TC = 25C
50
A
ID
Continuous Drain Current
TC = 100C
35
A
Pulsed Drain Current (Note 2)
IDM
200
A
Single Pulsed (Note 3)
EAS
480
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
13
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
7
V/ns
TO-220
120
W
TO-251
Power Dissipation (TC=25C)
PD
W
90
TO-252
136
W
Junction Temperature
TJ
+150
C
Operation and Storage Temperature
TSTG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by TJ
3. L=0.38mH, IAS=50A, VDD=25V, RG=20, Starting TJ=25C
4. ISD50A, di/dt300A/s, VDDBVDSS, Starting TJ=25C
Drain-Source Voltage
Gate-Source Voltage

Rev.02

2006 Thinki Semiconductor Co.,Ltd.

SYMBOL
VDSS
VGSS

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55NF06

THERMAL DATA
PARAMETER

Junction to Ambient

Junction to Case 

JA

JC

RATING
62
62

UNIT
C/W
C/W

100
1.24
1.28
1.1

C/W
C/W
C/W
C/W

ELECTRICAL CHARACTERISTICS (TC = 25C, unless otherwise specified)

PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

SYMBOL
TO-220
TO-251
TO-252
TO-220
TO-251
TO-252

SYMBOL

TEST CONDITIONS

BVDSS
IDSS

VGS = 0 V, ID = 250 A
VDS = 60 V, VGS = 0 V
VGS = 20V, VDS = 0 V
IGSS
VGS = -20V, VDS = 0 V
ID = 250 A,
BVDSS/TJ
Referenced to 25C
VGS(TH)
RDS(ON)

VDS = VGS, ID = 250 A

VGS = 10 V, ID = 25 A

CISS
COSS
CRSS

VGS = 0 V, VDS = 25 V
f = 1MHz

MIN TYP MAX UNIT

60
10
100
-100
0.07

2.0
18

V
A
nA
nA
V/C

4.0
23

V
m

900 1220
430 550
80 100

pF
pF
pF

40
100
90
80
30
9.6
10

60
200
180
160
40

ns
ns
ns
ns
nC
nC
nC

1.5

50

200

ELECTRICAL CHARACTERISTICS(Cont.)

SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 30V, ID =25 A,
Turn-On Rise Time
tR
R
Turn-Off Delay Time
tD(OFF)
G = 50 (Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS = 48V, VGS = 10 V
Gate-Source Charge
QGS
ID = 50A (Note 1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS ANDMAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
IS = 50A, VGS = 0 V
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
IS = 50A, VGS = 0 V
dIF / dt = 100 A/s
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse Width300s, Duty Cycle2%
2. Essentially independent of operating temperature

Rev.02
2006 Thinki Semiconductor Co.,Ltd.

54
81

ns
C

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55NF06

TEST CIRCUITS AND WAVEFORMS

D.U.T.

VDS
+
-

RG
Driver
Same Type
as D.U.T.

VGS

VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS
(Driver)

Period

D=

P.W.

P. W.
Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)

di/dt
IRM
Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.)

VDD

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

Rev.02
2006 Thinki Semiconductor Co.,Ltd.

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55NF06

TEST CIRCUITS AND WAVEFORMS (Cont.)



Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

L
VDS
BVDSS
IAS
RG

VDD
ID(t)

VDS(t)

VDD

10V

D.U.T.
tp
tp

Time


Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

Rev.02
2006 Thinki Semiconductor Co.,Ltd.

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55NF06

Drain Current, ID (A)

TYPICAL CHARACTERISTICS

Drain Current, ID (A)




On State Current vs.
Allowable Case Temperature

On-Resistance Variation vs.

Drain Current and Gate Voltage
2.5
102
2.0

150C

1.5
1.0

101

VGS=10V

*Note:
1. VGS=0V
2. 250s Test

VGS=20V

0.5

25C

100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)

0.0
0 20 40 60 80 100 120 140160180 200
Drain Current, ID (A)




Rev.02
2006 Thinki Semiconductor Co.,Ltd.

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55NF06

TYPICAL CHARACTERISTICS(Cont.)

Drain-Source On-Resistance, RDS(ON),
(Normalized)

Drain-Source Breakdown Voltage,

BVDSS(Normalized)

Breakdown Voltage Variation vs.

Junction Temperature
1.2

1.1

1.0

0.9

*Note:
1. VGS=0V
2. ID=250A

0.8
150 200
-100 -50
0
50 100
Junction Temperature, TJ (C)

3.0

On-Resistance Variation vs.

Junction Temperature

2.5
2.0
1.5
1.0
0.5
0.0

*Note:
1. VGS=10V
2. ID=25A
-50
0
50
100
150
Junction Temperature, TJ (C)



Maximum Drain Current vs.
Case Temperature

Maximum Safe Operating

50
Drain Current, ID (A)

Drain Current , ID,(A)

103 Operation in This

Area by RDS (on)
100s
1ms

102

10ms

10

10ms

*Note:
1. Tc=25C
2. TJ=150C
10-1 3. Single Pulse
100

10-1

40
30
20
10
0

100
101
102
Drain-Source Voltage, VDS (V)

25

50
75
100
125
Case Temperature, TC (C)

150


Thermal Response, ZJC (t)







Rev.02
2006 Thinki Semiconductor Co.,Ltd.

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