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  • Shantou Huashan Electronic Devices Co.,Ltd.: CEO B EBO FE 1 FE 2 CE (Sat) 1 CE (Sat) 2 CE (Sat) 3 BE (Sat) 1 B BE (Sat) 2

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    Alejandro Borrego Dominguez
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    This document provides specifications for the HE13009 high voltage silicon transistor. It is suitable for high speed switching applications like switching regulators and monitor controls. The transistor has a maximum collector-emitter voltage of 400V and can dissipate up to 100W. It also has high current and voltage gain properties making it well-suited for switching applications. Key electrical characteristics including saturation voltages, current gain, and switching times are provided.

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    This document provides specifications for the HE13009 high voltage silicon transistor. It is suitable for high speed switching applications like switching regulators and monitor controls. The transistor has a maximum collector-emitter voltage of 400V and can dissipate up to 100W. It also has high current and voltage gain properties making it well-suited for switching applications. Key electrical characteristics including saturation voltages, current gain, and switching times are provided.

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    18 views1 page

    Shantou Huashan Electronic Devices Co.,Ltd.: CEO B EBO FE 1 FE 2 CE (Sat) 1 CE (Sat) 2 CE (Sat) 3 BE (Sat) 1 B BE (Sat) 2

    Uploaded by

    Alejandro Borrego Dominguez
    This document provides specifications for the HE13009 high voltage silicon transistor. It is suitable for high speed switching applications like switching regulators and monitor controls. The transistor has a maximum collector-emitter voltage of 400V and can dissipate up to 100W. It also has high current and voltage gain properties making it well-suited for switching applications. Key electrical characteristics including saturation voltages, current gain, and switching times are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 1

    N P N S I L I C O N T RAN S I S T O R

    Shantou Huashan Electronic Devices Co.,Ltd.

    HE13009
    HIGH VOLTAGE SWITCH MODE APPLICICATIONS
    High Speed Switching
    Suitable for Switching Regulator and Montor Control

    ABSOLUTE MAXIMUM RATINGSTa=25

    TO-220

    TstgStorage Temperature -55~150


    TjJunction Temperature 150
    PCCollector DissipationTc=25 100W
    VCBOCollector-Base Voltage 700V
    VCEOCollector-Emitter Voltage 400V

    1BaseB
    2CollectorC
    3Emitter, E

    VEBO Emitter-Base Voltage 9V


    ICCollector CurrentDC 12A
    IBBase Current6A

    ELECTRICAL CHARACTERISTICSTa=25
    Symbol

    BVCEO
    IEBO
    HFE1

    Characteristics
    Collector-Emitter Breakdown Voltage

    Min

    Typ

    400
    1

    Emitter-Base Cut-off Current

    DC Current Gain

    HFE2

    Max

    Unit

    Test Conditions

    IC=10mA, IB=0

    mA

    VEB=9V, IC=0

    40

    VCE=5V, IC=5A

    30

    VCE=5V, IC=8A

    IC=5A, IB=1A

    VCE(sat)2

    1.5

    IC=8A, IB=1.6A

    VCE(sat)3

    IC=12A, IB=3A

    1.2

    IC=5A, IB=1A

    1.6

    IC=8A, IB=1.6A

    pF

    VCB=10V,f=0.1MHz

    MHz

    VCE=10V,IC=0.5A

    VCE(sat)1

    VBE(sat)1

    Collector- Emitter Saturation Voltage

    Base-Emitter Saturation Voltage

    VBE(sat)2
    Cob

    180

    Output Capacitance
    4

    fT

    Current Gain-Bandwidth Product

    tON

    Turn On Time

    1.1

    tSTG

    Storage Time

    VCC=125V, IC=8A,

    0.7

    IB1=1.6A,IB2=-1.6A

    tF

    Fall Time

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