2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier: Features

2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier

Features
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
2N3904
PZT3904
MMBT3904
C
E
TO-92
SOT-23
Absolute Maximum Ratings*

Symbol
Value
Units
40
Collector-Base Voltage
60
Emitter-Base Voltage
6.0
200
mA
-55 to +150
Collector-Emitter Voltage
VCBO
VEBO
IC
Ta = 25C unless otherwise noted
Parameter
VCEO
TJ, Tstg
SOT-223
Mark:1A
EBC
Collector Current - Continuous

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
PD
Max.
Parameter
2N3904
625
5.0
Total Device Dissipation

Derate above 25C
RJC
Thermal Resistance, Junction to Case
83.3
RJA
Thermal Resistance, Junction to Ambient
200
*MMBT3904
350
2.8
**PZT3904
1,000
8.0
357
125
Units
mW
mW/C
C/W
C/W
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
2011 Fairchild Semiconductor Corporation

2N3904 / MMBT3904 / PZT3904 Rev. B0
www.fairchildsemi.com
1
2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier
October 2011
Symbol
Parameter
Test Condition
Min.
Max.
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
IBL
ICEX
IC = 1.0mA, IB = 0
40
IC = 10A, IE = 0
60
IE = 10A, IC = 0
6.0
Base Cutoff Current
VCE = 30V, VEB = 3V
50
nA
Collector Cutoff Current
VCE = 30V, VEB = 3V
50
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 0.1mA, VCE = 1.0V

IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
40
70
100
60
30
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.2
0.3
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.65
0.85
0.95
V
V
Current Gain - Bandwidth Product
IC = 10mA, VCE = 20V,

f = 100MHz
300
Cobo
Output Capacitance
VCB = 5.0V, IE = 0,
f = 1.0MHz
4.0
pF
Cibo
Input Capacitance
VEB = 0.5V, IC = 0,
f = 1.0MHz
8.0
pF
NF
Noise Figure
IC = 100A, VCE = 5.0V,

RS = 1.0k,
f = 10Hz to 15.7kHz
5.0
dB
VCC = 3.0V, VBE = 0.5V

IC = 10mA, IB1 = 1.0mA
35
ns
SMALL SIGNAL CHARACTERISTICS

fT
MHz
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCC = 3.0V, IC = 10mA,

IB1 = IB2 = 1.0mA
35
ns
200
ns
50
ns
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%
Ordering Information
Part Number
Marking
Package
Packing Method
Pack Qty
2N3904BU
2N3904
TO-92
BULK
10000
2N3904TA
2N3904
TO-92
AMMO
2000
2N3904TAR
2N3904
TO-92
AMMO
2000
2N3904TF
2N3904
TO-92
TAPE REEL
2000
2N3904TFR
2N3904
TO-92
TAPE REEL
2000
MMBT3904
1A
SOT-23
TAPE REEL
3000
MMBT3904_D87Z
1A
SOT-23
TAPE REEL
10000
PZT3904
3904
SOT-223
TAPE REEL
2500

2N3904 / MMBT3904 / PZT3904 Rev. B0
2
Electrical Characteristics
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
500
V CE = 5V
400
125 C
300
25 C
200
- 40 C
100
0
0.1
1
10
I C - COLLECTOR CURRENT (mA)
100
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
VBE(ON)- BASE-EMITTER ON VOLTAGE (V)
VBESAT- BASE-EMITTER VOLTAGE (V)
h FE - TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain

vs Collector Current
= 10
- 40 C
25 C
0.6
125 C
0.4
0.1
IC
1
10
- COLLECTOR CURRENT (mA)
100
Collector-Emitter Saturation
Voltage vs Collector Current
0.15
125 C
0.1
25 C
0.05
- 40 C
0.1
1
VCE = 5V
0.8
- 40 C
25 C
0.6
125 C
0.4
0.2
0.1
1
10
100
10
f = 1.0 MHz
VCB = 30V
CAPACITANCE (pF)
ICBO- COLLECTOR CURRENT (nA)
100
Capacitance vs
Reverse Bias Voltage
500
10
1
0.1
25
1
10
Base-Emitter ON Voltage vs
Collector Current
Collector-Cutoff Current
vs Ambient Temperature
100
= 10
50
75
100
125
TA - AMBIENT TEMPERATURE ( C)
4
3
C ibo
2
C obo
1
0.1
150

2N3904 / MMBT3904 / PZT3904 Rev. B0
1
10
REVERSE BIAS VOLTAGE (V)
100
3
Typical Performance Characteristics
Noise Figure vs Source Resistance
Noise Figure vs Frequency
12
I C = 1.0 mA
R S = 200
10
V CE = 5.0V
I C = 1.0 mA
NF - NOISE FIGURE (dB)
NF - NOISE FIGURE (dB)
12
A
I C = 50 A
R S = 1.0 k
k
I C = 0.5 mA
R S = 200
6
4
2
A, R S = 500
I C = 100 A
0
0.1
1
10
f - FREQUENCY (kHz)
10
I C = 5.0 mA
A
I C = 100 A
4
2
0
0.1
100
V CE = 40V
I C = 10 mA
PD - POWER DISSIPATION (W)
- CURRENT GAIN (dB)

fe
10
100
f - FREQUENCY (MHz)
1000
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
Turn-On Time vs Collector Current

500
I B1 = I B2 =
VCC = 40V
10
t r - RISE TIME (ns)
TIME (nS)
15V
2.0V
10
10
100
150
I B1 = I B2 =
Ic
10
T J = 25C
T J = 125C
100

2N3904 / MMBT3904 / PZT3904 Rev. B0
125
10
t d @ VCB = 0V
1
50
75
100
TEMPERATURE (o C)
Rise Time vs Collector Current
t r @ V CC = 3.0V
25
500
Ic
40V
100
100
- DEGREES
0
20
40
60
80
100
120
140
160
180
h fe
1
10
k) )
R S - SOURCE RESISTANCE ((k
Power Dissipation vs
Ambient Temperature
Current Gain and Phase Angle

vs Frequency
50
45
40
35
30
25
20
15
10
5
0
A
I C = 50 A
10
100
4
Typical Performance Characteristics (continued)
Storage Time vs Collector Current

I B1 = I B2 =
T J = 25C
Fall Time vs Collector Current

500
Ic
I B1 = I B2 =
10
t f - FALL TIME (ns)
t S - STORAGE TIME (ns)
500
100
T J = 125C
10
5
T J = 125C
100
T J = 25C
10
100
10
Current Gain
V CE = 10 V
f = 1.0 kHz
T A = 25oC
100
10
0.1
1
1
10

2N3904 / MMBT3904 / PZT3904 Rev. B0
V CE = 10 V
f = 1.0 kHz
T A = 25oC
10
1
0.1
1
10
Voltage Feedback Ratio
)
_4
h re - VOLTAGE FEEDBACK RATIO (x10
V CE = 10 V
f = 1.0 kHz
T A = 25oC
10
0.1
0.1
100
10
Input Impedance
100
100
Output Admittance
mhos)
h oe - OUTPUT ADMITTANCE ( nhos
h fe - CURRENT GAIN
VCC = 40V
10
500
(k)
)
h ie - INPUT IMPEDANCE (k
Ic
10
10
7
V CE = 10 V
f = 1.0 kHz
T A = 25oC
5
4
3
2
1
0.1
1
10
5
Typical Performance Characteristics (continued)
Test Circuits
3.0 V
275
300ns
300
ns
10.6 V
Duty Cycle == 2%
10 K
0
C1 << 4.0pF
4.0 pF
- 0.5 V
1.0 ns
<< 1.0ns
FIGURE 1: Delay and Rise Time Equivalent Test Circuit

3.0 V
10
500500
s s
10 <<t1 t<1 <
t1
275
10.9 V
Duty Cycle == 2%
10 K
< 4.0pF
C1 <
4.0 pF
1N916
- 9.1 V
<< 1.0ns
1.0 ns
FIGURE 2: Storage and Fall Time Equivalent Test Circuit

2N3904 / MMBT3904 / PZT3904 Rev. B0
6
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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FlashWriter*
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Quiet Series
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Saving our world, 1mW/W/kW at a time

SignalWise
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Ultra FRFET
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component in any component of a life support, device, or
1. Life support devices or systems are devices or systems which, (a)
system whose failure to perform can be reasonably expected to
are intended for surgical implant into the body or (b) support or
cause the failure of the life support device or system, or to affect its
sustain life, and (c) whose failure to perform when properly used in
safety or effectiveness.
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I57
Fairchild Semiconductor Corporation

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2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier: Features

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Available Formats

2N3904 / MMBT3904 / PZT3904

NPN General Purpose Amplifier

Absolute Maximum Ratings*

Ta = 25C unless otherwise noted

Collector Current - Continuous

Ta = 25C unless otherwise noted

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

2011 Fairchild Semiconductor Corporation