Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525AF

GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf

Collector-emitter voltage peak value

Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time

VBE = 0 V

PINNING - SOT199
PIN

TYP.

MAX.

UNIT

8.0
0.2

1500
800
12
30
45
5.0
0.35

V
V
A
A
W
V
A
s

Ths 25 C
IC = 8.0 A; IB = 1.6 A
ICsat = 8.0 A; IB(end) = 1.1 A

PIN CONFIGURATION

SYMBOL

DESCRIPTION

base

collector

emitter

case isolated

c
case

b
1

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL

PARAMETER

CONDITIONS

VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj

Collector-emitter voltage peak value

Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature

VBE = 0 V

average over any 20 ms period

Ths 25 C

MIN.

MAX.

UNIT

-65
-

1500
800
12
30
8
12
200
7
45
150
150

V
V
A
A
A
A
mA
A
W
C
C

TYP.

MAX.

UNIT

THERMAL RESISTANCES
SYMBOL

PARAMETER

CONDITIONS

Rth j-hs

Junction to heatsink

without heatsink compound

3.7

K/W

Rth j-hs

Junction to heatsink

with heatsink compound

2.8

K/W

Rth j-a

Junction to ambient

in free air

35

K/W

1 Turn-off current.

September 1997

Rev 1.400

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525AF

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

Visol

Repetitive peak voltage from all

three terminals to external
heatsink

R.H. 65 % ; clean and dustfree

Cisol

Capacitance from T2 to external f = 1 MHz

heatsink

MIN.

TYP.

MAX.

UNIT

2500

22

pF

MIN.

TYP.

MAX.

UNIT

1.0
2.0

mA
mA

7.5
800

13.5
-

1.0
-

mA
V
V

13
7

5.0
1.1
9.5

V
V

STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS
2

ICES
ICES

Collector cut-off current

IEBO
BVEBO
VCEOsust

Emitter cut-off current

Emitter-base breakdown voltage
Collector-emitter sustaining voltage

VCEsat
VBEsat
hFE
hFE

Collector-emitter saturation voltage

Base-emitter saturation voltage
DC current gain

VBE = 0 V; VCE = VCESMmax

VBE = 0 V; VCE = VCESMmax;
Tj = 125 C
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 8.0 A; IB = 1.6 A
IC = 8.0 A; IB = 1.6 A
IC = 100 mA; VCE = 5 V
IC = 8 A; VCE = 5 V

DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Cc

Collector capacitance

IE = 0 A; VCB = 10 V; f = 1 MHz

145

pF

Switching times (32 kHz line

deflection circuit)

ICsat = 8.0 A; LC = 260 H; Cfb = 13 nF;

IB(end) = 1.1 A; LB = 2.5 H; -VBB = 4 V;
(-dIB/dt = 1.6 A/s)

3.0
0.2

4.0
0.35

s
s

ts
tf

Turn-off storage time

Turn-off fall time

2 Measured with half sine-wave voltage (curve tracer).

September 1997

Rev 1.400

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525AF

ICsat

+ 50v

90 %

100-200R
IC

10 %

Horizontal
tf

Oscilloscope

ts
IB
IBend

Vertical

1R

100R
6V
30-60 Hz

- IBM

Fig.1. Test circuit for VCEOsust.

Fig.4. Switching times definitions.

IC / mA

+ 150 v nominal
adjust for ICsat

Lc
250
200

LB

IBend

100

0
VCE / V

T.U.T.
Cfb

-VBB

min
VCEOsust

Fig.2. Oscilloscope display for VCEOsust.

TRANSISTOR
IC

Fig.5. Switching times test circuit.

ICsat

100

hFE

BU2525AF

DIODE

Tj = 25 C

5V

Tj = 125 C

IBend

IB

10

t
10us

1V

13us
32us

VCE

Fig.3. Switching times waveforms.

September 1997

0.1

10

100

IC / A

Fig.6. Typical DC current gain. hFE = f (IC)

parameter VCE

Rev 1.400

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

1.2

VBESAT / V

1.1

BU2525AF

BU2525AF

VCESAT / V

10

BU2525AF

Tj = 25 C

Tj = 25 C

Tj = 125 C

Tj = 125 C

1
0.9
8A

0.8

1
6A

IC/IB=

0.7

0.6

5A

0.5

IC = 4 A

0.4
0.1

1
IC / A

0.1

10

0.1

Fig.7. Typical base-emitter saturation voltage.

VBEsat = f (IC); parameter IC/IB

VCESAT / V

1
IB / A

Fig.10. Typical collector-emitter saturation voltage.

VCEsat = f (IB); parameter IC

BU2525AF

Eoff / uJ

1000

BU2525AF
IC = 8 A

IC/IB =

0.9

10

0.8

0.7

7A

0.6

100

0.5
Tj = 25 C

0.4

Tj = 125 C

0.3
0.2
0.1
0

0.1

10

100

10

0.1

IC / A

Fig.8. Typical collector-emitter saturation voltage.

VCEsat = f (IC); parameter IC/IB

1.2

VBESAT / V

BU2525AF

12
11
10
9
8
7
6
5

Tj = 125 C

1
0.9
IC=
0.8

6A
5A
4A

0.6
0

2
IB / A

BU2525AF
32 kHz

ts

IC =
8A
7A
0.1

1
IB / A

tf
10

Fig.12. Typical collector storage and fall time.

ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 32 kHz

Fig.9. Typical base-emitter saturation voltage.

VBEsat = f (IB); parameter IC

September 1997

ts, tf / us

4
3
2
1
0

8A

0.7

10

Fig.11. Typical turn-off losses. Tj = 85C

Eoff = f (IB); parameter IC; f = 32 kHz

Tj = 25 C

1.1

1
IB / A

Rev 1.400

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

Normalised Power Derating

PD%

120

BU2525AF

IC / A

with heatsink compound

110

BU2525AF

100

100
90

tp =
= 0.01

ICM

80
70

40 us

60

ICDC

50
40

10

30
20

100 us

10
0
0

20

40

60

80
Ths / C

100

120

140

Ptot

Fig.13. Normalised power dissipation.

PD% = 100PD/PD 25C = f (Ths)

1 ms
10

Zth / (K/W)

BU2525AF

0.5

0.1

0.2
0.1
0.05

0.1

10 ms
DC

0.02
PD

0.01

tp

D=

tp
T

0.01
D=0
0.001
1E-06

1E-04

1E-02
t/s

Fig.14. Transient thermal impedance.

Zth j-hs = f(t); parameter D = tp/T

September 1997

10

100

1000 VCE / V

Fig.15. Forward bias safe operating area. Ths = 25 C

ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.

1E+00

Rev 1.400

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525AF

MECHANICAL DATA
Dimensions in mm

15.3 max

Net Mass: 5.5 g

5.2 max

3.1
3.3

0.7
7.3

3.2
o
45

6.2
5.8
21.5
max

seating
plane

3.5 max
not tinned

3.5

15.7
min
1

2.1 max

5.45

3
1.2
1.0

0.7 max
0.4 M

2.0

5.45

Fig.16. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

September 1997

Rev 1.400

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525AF

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1997

Rev 1.400

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