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BITS Pilani
Hyderabad Campus
Intrinsic Semiconductors
Extrinsic Semiconductor
Density of States
d
N (E)
dE
Density of states
Carrier Distribution
Extrinsic Semiconductor
Electron Concentration
Electron Concentration in
Conduction band
n N ( E ) f ( E )dE
0
3
1
2
1 2me 2
1
n0 2 2 E
E EF
2
0
1 e k BT
x
0
1 / 2 ax
dx
dE
2a 3 / 2
2me k BT
n0 2
2
h
3/ 2
E F EC
k BT
Hole Concentration
p0 N ( E )1 f ( E ) dE
0
3
1 E EF
1 2me 2 2 k BT
p0 2 2 E e
2
0
x
0
1 / 2 ax
dx
dE
2a 3 / 2
2mh k BT
p0 2
2
h
3/ 2
Ev E F
k BT
Intrinsic Semiconductor
Application of Intrinsic
Semiconductors
Temperature Dependence of
Carrier Concentration
2k BT
ni (T ) 2
2
h
3/ 2
m m
3/ 4
Eg
2 k BT
Carrier Concentration At
high and low temperatures
ni N c N v e
Eg
2 k BT
2k BT
ni (T ) 2
2
h
3/ 2
n0 ni e
m m
3/ 4
p
E F Ei
k BT
EG
2 k BT
ni N c N v e
Eg
2 k BT
ni (T )
Compensated Semiconductor
Charge Neutrality