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CNS Ece2
CNS Ece2
1. When the diode is supplied with a forward direction potential but with a magnitude
less than the threshold voltage of the diode, still it will not turn-on and will
only allow a very small amount of current to pass. This very small current is
known as
Ans. cut-off current
2. As the operating temperature of a reverse-biased diode is increased, its leakage of
reverse saturation current will
Ans. increase exponentially
3. Calculate the new threshold voltage of a germanium diode when it operates at 100
C.
Ans. 0.113 V
4. A silicon diode has a reverse saturation current of 50 nA at room temperature. If
the operating temperature is raised by 50 C, what is now the reverse saturation
current?
Ans. 1.66 A
5. In every increase of 10 C in the operating temperature of a diode will cause its
reverse saturation current to
Ans. double
6. The resistance of the diode that is significant when operating with a small ac
signal.
Ans. dynamic resistance
7. When a diode is used in large ac voltages, the resistance that is to be considered
is
Ans. average resistance
8. At forward bias condition, what will happen to the diode resistance when the
applied voltage is increased?
Ans. will decrease
9. When a diode is reverse biased the depletion region widens, since it is in between
positively charge holes and negatively charge electrons, it will have an effect of
a capacitor, this capacitance is called what?
Ans. transition capacitance
10.
11.
12.
The time taken by the diode to operate in the reverse condition from forward
conduction.
Ans. reverse recovery time
13.
14.
The time required for forward voltage or current to reach a specified value
after switching the diode from its reverse-to-forward-biased state.
Ans. forward recovery time
15.
16.
Diode whose negative resistance depends on a specific form of quantummechanical bond structure of the material.
Ans. Gunn diode
17.
A diode that is especially processed so that its high current flow takes
place when the junction is reverse-biased. It is a variation of a tunnel diode.
Ans. backward diode
18.
19.
A type of Reade diode that uses a heavily doped n-typed material as its drift
region.
Ans. IMPATT diode
20.
21.
22.
23.
The device that is formed when an n-type and p-type semiconductors are
brought together.
Ans. junction diode
24.
When the diode is supplied with a forward direction potential but with a
magnitude less than the threshold voltage of the diode, still it will not turn-on
and will only allow a very small amount of current of pass. This very small
current is known as
Ans. cut-off current
25.
26.
27.
28.
29.
30.
31.
At forward bias condition, what will happen to the diode resistance when the
applied voltage is increased?
Ans. will decrease
32.
33.
34.
35.
The time taken by the diode to operate in the reverse condition from forward
conduction.
Ans. reverse recovery time
36.
37.
The time required for forward voltage or current to reach a specified value
after switching the diode from its reverse-to-forward-biased state.
Ans. forward recovery time
38.
39.
Diode whose negative resistance depends on a specific form of quantummechanical bond structure of the material.
Ans. Gunn diode
40.
A diode that is especially processed so that its high current flow takes
place when the junction is reverse-biased. It is a variation of a tunnel diode/
Ans. backward diode
41.
42.
A type of Read diode that uses a heavily doped n-type material as its drift
region.
Ans. IMPATT diode
43.
A device containing more than one diode. An example is the full-wave bridgerectifier integrated circuit.
Ans. diode pack
44.
It is the combination of the inductance of the leads and electrodes,
capacitance of the junction, and the resistance of the junction of a semiconductor
diode.
Ans. diode impedance
45.
46.
47.
48.
49.
50.
A bipolar transistor in which the base region has been diffused in the
semiconductor wafer.
Ans. diffused-base transistor
51.
When n and p materials are both diffused into the semiconductor wafer to
provide emitter and base junctions, the transistor is called
Ans. diffused-emitter and base transistor
The
52.
A mesa transistor whose base is an n-type layer diffused into a p-type wafer,
the p-type wafer serves as the collector. Its emitter is a small p-type area
diffused into or alloyed with the n-layer.
Ans. diffused-mesa transistor
53.
54.
55.
56.
57.
A BJT that is made by first growing the emitter and collector regions as a
crystal into which the base region is later diffused while the crystal is being
pulled.
Ans. grown-diffused transistor
58.
59.
A transistor having tiny emitter and collector electrodes that are formed by
alloying a thin film of impurity material with a collector and emitter pits facing
each other on opposite surfaces of the semiconductor wafer
Ans. microalloy transistor (MAT)
60.
61.
62.
63.
64.
65.
66.
67.
68.
69.
70.
71.
72.
73.
The voltage across the gate-source terminal of a FET that causes drain
current ID equals to zero.
Ans. pinch-off voltage
74.
75.
76.
77.
Base from Shockleys equation of a JFET, what is the drain current when the
applied voltage VGS is exactly equal to the pinch-off voltage VP?
Ans. zero
78.
In MOSFET, it is the foundation upon which the device will be constructed and
is formed from a silicon base
Ans. substrate
79.
80.
To switch off the depletion type MOSFER, the channel should be depleted.
Depletion of the channel is done by applying enough voltage across the gate-source
terminal. What do you call this voltage?
Ans. pinch-off voltage
81.
82.
To deplete a channel from a p-channel IGFET depletion type, the gate voltage
should be ______ with respect to the source terminal.
Ans. positive
83.
84.
85.
86.
87.
88.
89.
90.
91.
What will happen to the magnitude of the load line slope if the load
resistance is increased?
Ans. decreases
92.
93.
The power gain that is lost due to the emitter bias resistor can be recovered
by
Ans. shunting a by-pass capacitor
94.
95.
How does the emitter by-pass capacitor affect the dc load line?
Ans. it does not affect the dc load line
96.
In analyzing the quiescent currents and voltages, on what load line do you
refer?
Ans. dc load line
97.
The position of the Q-point along the load line is greatly affected by what
component?
Ans. base-resistor
98.
What will happen to the position of the Q-point if the resistance baseresistor is increased?
Ans. it moves downward
99.
For a fixed-biased transistor circuit, what will happen to the Q-point when
the operation temperature rises?
Ans. it moves upward
100. For a battery operated transistor circuit, where is a good position of the Q-point
in order to minimize battery consumption?
Ans. near cutoff region
101. When troubleshooting a typical transistor amplifier in the active region, VCE is
usually _____ the supply voltage VCC.
Ans. about 25% to 75% of
102. Calculate the stability factor due to the variation of ICBO from 1 nA to 21 nA when
the temperature changes from room temperature to 100 C. The change in collectorcurrent due to the change of ICBO was found to be 0.5 A.
Ans. 25
103. The higher the stability factor means, a transistor circuit that is more sensitive
to temperature
Ans. variations, and therefore undesired
104. What stability factor that gives the highest value for a typical voltage-divider
bias transistor circuit?
Ans. S (ICO)
105. Calculate the change in the collector current due to the change in ICO for a
transistor circuit at 100 C. ICO at room temperature is given to be 0.1 nA and
increases to 20 nA at 100 C. The circuit has a stability factor S(ICO) = 25.
Ans. 0.5 A
106. For most common-emitter configuration with different methods of biasing, what is
the maximum stability factor due to the change of the reverse saturation current ICO?
Ans. + 1
107. What is the approximate output impedance of a common-emitter fixed-bias
configuration? The collector resistance RC is the only load resistance/
Ans. RC
108. A FET is biased with a voltage-divider configuration and is set at the active
region. Ideally, what is the gate current?
Ans. 0 mA
109. What type of FET that can be biased with both negative and positive gate-source
voltage VGS?
Ans. MOSFET depletion type
110. How do you classify an amplifier used to amplify either amplitude modulated (AM) or
frequency modulated (FM) signals?
Ans. class S
111. Which class of amplifiers that have the highest efficiency?
Ans. class D
112. Transistorized class C power amplifiers will usually have an efficiency of
Ans. 33%
113. For pulse-amplification, class D amplifier is mostly used.
class D amplifier?
Ans. its efficiency reaches over 90%
How efficient is a
114. The Q-point of a class D amplifier can be set or positioned at what region in the
load line?
Ans. any of these
115. What do you call an amplifier that is biased to class C but modulates over the same
portion of the curve as if it were biased to class B?
Ans. class BC
116. Two class B amplifiers connected such that one amplifies the positive cycle and the
other amplifies the remaining negative cycle. Both output signals are then coupled
by a transformer to the load.
Ans. transformer-coupled push-pull amplifier
117. A push-pull amplifier that uses npn and pnp transistors to amplify the positive and
negative cycles respectively.
Ans. complementary-symmetry amplifier
118. A push-pull amplifier that uses either npn or pnp as its final stage.
configuration looks like the complementary-symmetry.
Ans. quasi-complementary push-pull amplifier
The circuit
119. Distortion that is due to the inability of an amplifier to amplify equally well all
the frequencies present at the input signal/
Ans. amplitude distortion
120. Calculate the second harmonic distortion for an output signal having a fundamental
amplitude of 3 V and a second harmonic amplitude of 0.3 V.
Ans. 10 %
121. An amplifier has the following percent harmonic distortions: D2 = 10%, D3 = 5% and
D4 = 1%. What is the amplifier %THD?
Ans. 11.22%
122. T-equivalent circuit for transistor is considered as a _____ representation/
Ans. physical
123. What transistor model that uses a parameter value that is directly derived from the
operating condition?
Ans. re or dynamic model
124. The transistor model that is best suited for high frequency applications/
Ans. Giacolleto model
125. Another name of Giacolleto model for transistor modeling is
Ans. hybrid-pi model
126. What model is appropriate to use, if for a given transistor amplifier, beta () is
the only parameter available and we want to solve for its input and output
impedances?
Ans. dynamic model
127. When the transistor is operating at saturation region, dc-current is best
determined by using what model?
Ans. Ebers-Moll model
128. A two-stage transistor amplifier in which the output collector of the first stage
provides input to the emitter of the second stage. The final output is then taken
from the collector of the second or last stage.
Ans. cascode configuration
129. Famous transistor amplifier configuration designed to eliminate the so called
Miller effect.
Ans. cascode amplifier
130. Transistor arrangement that operates like a darlington but uses a combination of
pnp and npn transistors instead of both npn.
Ans. feedback pair