NTP75N06, NTB75N06

Power MOSFET
75 Amps, 60 Volts, NChannel
TO220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.

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75 AMPERES, 60 VOLTS
RDS(on) = 9.5 m

Features

PbFree Packages are Available

NChannel
D

Typical Applications

Power Supplies
Converters
Power Motor Controls
Bridge Circuits

G
S

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating

Symbol

Value

Unit

DraintoSource Voltage

VDSS

60

Vdc

DraintoGate Voltage (RGS = 10 M
)

VDGR

60

Vdc

GatetoSource Voltage
Continuous
NonRepetitive (tp10 ms)
Drain Current
Continuous @ TA = 25C
Continuous @ TA = 100C
Single Pulse (tp10 s)
Total Power Dissipation @ TA = 25C
Derate above 25C
Total Power Dissipation @ TA = 25C

VGS
VGS

ID
ID
IDM
PD

20

30
75
50
225

Adc

214
1.4
2.4

W
W/C
W

TO220
CASE 221A
STYLE 5

55 to
+175

Single Pulse DraintoSource Avalanche

Energy Starting TJ = 25C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH
IL(pk) = 75 A, VDS = 60 Vdc)

EAS

844

mJ

1
Gate

C/W
0.7
62.5

TL

260

4
Drain

2
3

D2PAK
CASE 418B
STYLE 2

75N06
AYWW

2
1
3
Drain
Gate
Source

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

3
Source
2
Drain

RJC
RJA

75N06
AYWW

Apk

TJ, Tstg

Maximum Lead Temperature for Soldering

Purposes, 1/8 from case for 10 seconds

4
Drain

Vdc

Operating and Storage Temperature Range

Thermal Resistance
JunctiontoCase
JunctiontoAmbient

MARKING
DIAGRAMS

75N06
A
Y
WW

= Device Code
= Assembly Location
= Year
= Work Week

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

Semiconductor Components Industries, LLC, 2004

August, 2004 Rev. 2

Publication Order Number:

NTP75N06/D

NTP75N06, NTB75N06
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic

Symbol

DraintoSource Breakdown Voltage (Note 1)

(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)

V(BR)DSS

Min

Typ

Max

Unit

60

71
73

10
100

100

2.0

2.8
8.0

4.0

8.2

9.5

0.72
0.63

0.86

gFS

40.2

mhos

Ciss

3220

4510

pF

Coss

1020

1430

Crss

234

330

td(on)

16

25

OFF CHARACTERISTICS

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C)

IDSS

GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc)

IGSS

Vdc
mV/C
Adc

nAdc

ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)

VGS(th)

Static DraintoSource OnResistance (Note 1)

(VGS = 10 Vdc, ID = 37.5 Adc)

RDS(on)

Static DraintoSource OnVoltage (Note 1)

(VGS = 10 Vdc, ID = 75 Adc)
(VGS = 10 Vdc, ID = 37.5 Adc, TJ = 150C)

VDS(on)

Forward Transconductance (Note 1) (VDS = 15 Vdc, ID = 37.5 Adc)

Vdc
mV/C
m

Vdc

DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)

Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time

(VDD = 30 Vdc, ID = 75 Adc,

VGS = 10 Vdc, RG = 9.1
) (Note 1)

Fall Time
Gate Charge
(VDS = 48 Vdc,
Vd ID = 75 Adc,
Ad
VGS = 10 Vdc) (Note 1)

ns

tr

112

155

td(off)

90

125

tf

100

140

QT

92

130

Q1

14

Q2

44

VSD

1.0
0.9

1.1

Vdc

trr

77

ns

ta

49

tb

28

QRR

0.16

nC

SOURCEDRAIN DIODE CHARACTERISTICS

Forward OnVoltage

(IS = 75 Adc, VGS = 0 Vdc) (Note 1)

(IS = 75 Adc, VGS = 0 Vdc, TJ = 150C)

Reverse Recovery Time

(IS = 75 Adc,
Ad VGS = 0 Vdc,
Vd
dIS/dt = 100 A/s) (Note 1)
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperatures.

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2

C

NTP75N06, NTB75N06
160
VGS = 10 V

140

VGS = 6.5 V

120
VGS = 7 V

100

ID, DRAIN CURRENT (AMPS)

ID, DRAIN CURRENT (AMPS)

160

VGS = 6 V

VGS = 8 V

80

VGS = 5.5 V

VGS = 9 V
60
40

VGS = 5 V

20

VGS = 4.5 V
2

80
60
40

TJ = 25C

20

TJ = 100C
3.5

TJ = 55C
4

4.5

5.5

6.5

Figure 1. OnRegion Characteristics

Figure 2. Transfer Characteristics

VGS = 10 V

TJ = 100C

0.013
0.011

TJ = 25C

0.009

RDS(on), DRAINTOSOURCE RESISTANCE (
)

VGS, GATETOSOURCE VOLTAGE (V)

0.015

0.015
VGS = 15 V
0.013
TJ = 100C
0.011
0.009

TJ = 25C

0.007

0.007
TJ = 55C
0.005

TJ = 55C

0.005
0.003

0.003
0

20

40

60

80

100

120

140

160

20

40

60

80

100

120

140

160

ID, DRAIN CURRENT (AMPS)

ID, DRAIN CURRENT (AMPS)

Figure 3. OnResistance vs. GatetoSource

Voltage

Figure 4. OnResistance vs. Drain Current and

Gate Voltage
10000

2
1.8

100

VDS, DRAINTOSOURCE VOLTAGE (V)

ID = 37.5 A
VGS = 10 V

VGS = 0 V

1.6

IDSS, LEAKAGE (nA)

RDS(on), DRAINTOSOURCE RESISTANCE (
)

RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED)

120

0
2.5

0
0

VDS  10 V

140

1.4
1.2
1

TJ = 150C

1000
TJ = 125C

TJ = 100C

100

0.8
0.6
50

10
25

25

50

75

100

125

150

175

10

20

30

40

50

TJ, JUNCTION TEMPERATURE (C)

VDS, DRAINTOSOURCE VOLTAGE (V)

Figure 5. OnResistance Variation with

Temperature

Figure 6. DraintoSource Leakage Current

vs. Voltage

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3

60

VGS, GATETOSOURCE VOLTAGE (V)

NTP75N06, NTB75N06
10000

C, CAPACITANCE (pF)

VDS = 0 V

VGS = 0 V

TJ = 25C

8000
Ciss
6000
Crss
Ciss

4000

Coss
2000
Crss
0
10

VGS 0 VDS

10

15

20

25

VGS
8
Q1
Q2

6
4
2
0

ID = 75 A
TJ = 25C
0

tr
td(off)
10
td(on)
VDS = 30 V
ID = 75 A
VGS = 5 V

1
1

10

70

40

50

60

70

80

90

100

VGS = 0 V
TJ = 25C

60
50
40
30
20
10
0
0.6

100

0.64 0.68 0.72 0.76 0.8

0.84 0.86 0.92 0.96

VSD, SOURCETODRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variations

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

EAS, SINGLE PULSE DRAINTOSOURCE

AVALANCHE ENERGY (mJ)

RG, GATE RESISTANCE (
)

1000

VGS = 20 V
SINGLE PULSE
TC = 25C

10 s

100
100 s
1 ms
10

10 ms
dc

RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1

30

Figure 8. GatetoSource and

DraintoSource Voltage vs. Total Charge

tf

1000

20

Figure 7. Capacitance Variation

80

100

10

Qg, TOTAL GATE CHARGE (nC)

IS, SOURCE CURRENT (AMPS)

t, TIME (ns)

QT

10

GATETOSOURCE OR DRAINTOSOURCE (V)

1000

ID, DRAIN CURRENT (AMPS)

12

10

100

ID = 75 A

800

600

400

200

0
25

50

75

100

125

150

VDS, DRAINTOSOURCE VOLTAGE (V)

TJ, STARTING JUNCTION TEMPERATURE (C)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

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4

175

r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

NTP75N06, NTB75N06

1.0
D = 0.5

0.2
0.1
0.1

P(pk)

0.05
0.02

t1

0.01

t2
DUTY CYCLE, D = t1/t2

SINGLE PULSE
0.01
0.00001

0.0001

0.001

0.01
t, TIME (s)

0.1

RJC(t) = r(t) RJC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RJC(t)

1.0

10

Figure 13. Thermal Response

ORDERING INFORMATION
Package

Shipping

TO220

50 Units/Rail

TO220
(PbFree)

50 Units/Rail

NTB75N06

D2PAK

50 Units/Rail

NTB75N06G

D2PAK

50 Units/Rail

Device
NTP75N06
NTP75N06G

(PbFree)
NTB75N06T4
NTB75N06T4G

D2PAK

800 Tape & Reel

D2PAK
(PbFree)

800 Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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5

NTP75N06, NTB75N06
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AA

T
B

SEATING
PLANE

F
T

DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z

Q
1 2 3

H
K
Z
L

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

G
D
N

INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045

0.080

STYLE 5:
PIN 1.
2.
3.
4.

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6

GATE
DRAIN
SOURCE
DRAIN

MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15

2.04

NTP75N06, NTB75N06
PACKAGE DIMENSIONS
D2PAK
CASE 418B04
ISSUE J
C

NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B01 THRU 418B03 OBSOLETE,
NEW STANDARD 418B04.

E
V
W

B
4

DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V

A
1

T
SEATING
PLANE

W
J

G
D

H
3 PL

0.13 (0.005)

T B

INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055

STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

VARIABLE
CONFIGURATION
ZONE

P
U

VIEW WW
1

VIEW WW
2

VIEW WW
3

SOLDERING FOOTPRINT*
8.38
0.33

1.016
0.04

10.66
0.42

5.08
0.20

3.05
0.12
17.02
0.67
SCALE 3:1

mm 
inches

*For additional information on our PbFree strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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7

MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40

NTP75N06, NTB75N06

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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For additional information, please contact your

local Sales Representative.

NTP75N06/D