R6015FNX: V 600V R (Max.) 0.35Ω I ±15A P 50W

R6015FNX
Nch 600V 15A Power MOSFET
Datasheet
l Outline
VDSS
600V
RDS(on)(Max.)
0.35
ID
15A
PD
50W
TO-220FM
l Inner circuit
l Features
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to
be 30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
l Packaging specifications
Packing
l Application
Type
Switching Power Supply
Reel size (mm)
Bulk
-
Tape width (mm)
Basic ordering unit (pcs)

Taping code
500
-
Marking
R6015FNX
l Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Value
Unit
VDSS
600
TC = 25C
ID*1
15
TC = 100C
ID*1
7.3
ID,pulse*2
60
Gate - Source voltage
VGSS
30
Avalanche energy, single pulse
EAS*3
15
mJ
Avalanche energy, repetitive
EAR*4
3.5
mJ
Avalanche current
Power dissipation (Tc = 25C)
IAR*3
7.5
PD
50
Tj
150
Range of storage temperature
Tstg
-55 to +150
Reverse diode dv/dt
dv/dt
15
V/ns
Drain - Source voltage

Continuous drain current
Pulsed drain current
Junction temperature
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2014 ROHM Co., Ltd. All rights reserved.
1/13
20131105 - Rev.002
R6015FNX
Datasheet
l Absolute maximum ratings
Parameter
Symbol
Drain - Source voltage slope
Conditions
VDS = 480V, ID = 15A
dv/dt
Tj = 125
l Thermal resistance
Parameter
Values
Unit
50
V/ns
Values
Symbol
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case
RthJC
2.5
/W
Thermal resistance, junction - ambient
RthJA
70
/W
Soldering temperature, wavesoldering for 10s
Tsold
265
l Electrical characteristics (Ta = 25C)
Parameter
Symbol
Values
Conditions
Unit
Min.
Typ.
Max.
Drain - Source breakdown

voltage
V(BR)DSS
VGS = 0V, ID = 1mA
600
Drain - Source avalanche

breakdown voltage
V(BR)DS
VGS = 0V, ID = 7.5A
700
VDS = 600V, VGS = 0V
Tj = 25C
100
Tj = 125C
10000
IGSS
VGS = 30V, VDS = 0V
100
nA
VGS(th)
VDS = 10V, ID = 1mA
VGS = 10V, ID = 7.5A
Tj = 25C
0.27
0.35
Tj = 125C
0.59
f = 1MHz, open drain
10.2
Zero gate voltage

drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate input resistance
IDSS
RDS(on)*6
RG
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2/13
20131105 - Rev.002
R6015FNX
Datasheet
l Electrical characteristics (Ta = 25C)
Parameter
Symbol
Values
Conditions
Min.
Typ.
Max.
4.5
10
Transconductance
gfs*6
VDS = 10V, ID = 7.5A
Input capacitance
Ciss
VGS = 0V
1660
Output capacitance
Coss
VDS = 25V
1110
Reverse transfer capacitance
Crss
f = 1MHz
45
Effective output capacitance,

energy related
Co(er)
54.6
Effective output capacitance,

time related
Co(tr)
Turn - on delay time
td(on)*6
Turn - off delay time

Fall time
pF
pF
-
183
VDD 300V, VGS = 10V
38
ID = 7.5A
45
td(off)*6
RL = 40.2
120
240
tf*6
RG = 10
35
70
tr*6
Rise time
VGS = 0V,
VDS = 0V to 480V
Unit
ns
l Gate charge characteristics (Ta = 25C)
Parameter
Symbol
Values
Conditions
Min.
Typ.
Max.
Total gate charge
Qg*6
VDD 300V
42
Gate - Source charge
Qgs*6
ID = 15A
12
Gate - Drain charge
Qgd*6
VGS = 10V
20
Gate plateau voltage
V(plateau)
VDD 300V, ID = 15A
7.6
Unit
nC
*1 Limited only by maximum temperature allowed.

*2 Pw 10s, Duty cycle 1%
*3 L500H, VDD=50V, RG=25, starting Tj = 25C
*4 L500H, VDD=50V, RG=25, starting Tj = 25C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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3/13
20131105 - Rev.002
R6015FNX
Datasheet
l Body diode electirical characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol
Inverse diode continuous,

forward current
IS*1
Inverse diode direct current,

pulsed
ISM*2
Forward voltage
VSD*6
Conditions
Values
Typ.
Max.
15
60
1.5
90
ns
0.44
10.4
1000
A/s
TC = 25
Reverse recovery time
trr*6
Reverse recovery charge
Qrr*6
Peak reverse recovery current
Irrm*6
Peak rate of fall of reverse

recovery current
dirr/dt
VGS = 0V, IS = 15A

IS = 15A
di/dt = 100A/s
Tj = 25
l Typical transient thermal characteristics
Symbol
Value
Rth1
0.117
Rth2
0.662
Rth3
2.14
Unit
Min.
Unit
K/W
Symbol
Value
Cth1
0.00318
Cth2
0.0429
Cth3
0.507
Unit
Ws/K
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4/13
20131105 - Rev.002
R6015FNX
Datasheet
l Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal

Resistance vs. Pulse Width
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5/13
20131105 - Rev.002
R6015FNX
Datasheet
Fig.4 Avalanche Current vs. Inductive Load
Fig.5 Avalanche Power Losses
Fig.6 Avalanche Energy Derating Curve

vs. Junction Temperature
www.rohm.com
6/13
20131105 - Rev.002
R6015FNX
Datasheet
Fig.7 Typical Output Characteristics(I)
Fig.8 Typical Output Characteristics(II)
Fig.9 Tj = 150C Typical Output

Characteristics (I)
Fig.10 Tj = 150C Typical Output

Characteristics (II)
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7/13
20131105 - Rev.002
R6015FNX
Datasheet
Fig.11 Breakdown Voltage vs.

Junction Temperature
Fig.12 Typical Transfer Characteristics
Fig.13 Gate Threshold Voltage vs.

Junction Temperature
Fig.14 Transconductance vs. Drain Current
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8/13
20131105 - Rev.002
R6015FNX
Datasheet
Fig.15 Static Drain - Source On - State

Resistance vs. Gate Source Voltage

Resistance vs. Junction Temperature

Resistance vs. Drain Current
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9/13
20131105 - Rev.002
R6015FNX
Datasheet
Fig.18 Typical Capacitance vs. Drain Source Voltage
Fig.19 Coss Stored Energy
Fig.20 Switching Characteristics
Fig.21 Dynamic Input Characteristics
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10/13
20131105 - Rev.002
R6015FNX
Datasheet
Fig.22 Inverse Diode Forward Current vs.

Source - Drain Voltage
Fig.23 Reverse Recovery Time vs.

Inverse Diode Forward Current
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11/13
20131105 - Rev.002
R6015FNX
Datasheet
l Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
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12/13
20131105 - Rev.002
R6015FNX
Datasheet
l Dimensions
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13/13
20131105 - Rev.002

R6015FNX: V 600V R (Max.) 0.35Ω I ±15A P 50W

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R6015FNX: V 600V R (Max.) 0.35Ω I ±15A P 50W

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Copyright:

Available Formats

R6015FNX

Nch 600V 15A Power MOSFET

Switching Power Supply

Reel size (mm)

Tape width (mm)

Basic ordering unit (pcs)

l Absolute maximum ratings (Ta = 25C)

Gate - Source voltage

Avalanche energy, single pulse

Avalanche energy, repetitive

Range of storage temperature

Reverse diode dv/dt

Drain - Source voltage

l Absolute maximum ratings

Drain - Source voltage slope

Thermal resistance, junction - case

Thermal resistance, junction - ambient

Soldering temperature, wavesoldering for 10s

l Electrical characteristics (Ta = 25C)

Drain - Source breakdown

VGS = 0V, ID = 1mA

Drain - Source avalanche

VGS = 0V, ID = 7.5A

VDS = 600V, VGS = 0V

VGS = 30V, VDS = 0V

VDS = 10V, ID = 1mA

VGS = 10V, ID = 7.5A

f = 1MHz, open drain

Zero gate voltage

l Electrical characteristics (Ta = 25C)

VDS = 10V, ID = 7.5A

Reverse transfer capacitance

Effective output capacitance,

Effective output capacitance,

Turn - on delay time

Turn - off delay time

VDD 300V, VGS = 10V

l Gate charge characteristics (Ta = 25C)

Total gate charge

Gate - Source charge

Gate - Drain charge

Gate plateau voltage

VDD 300V, ID = 15A

*1 Limited only by maximum temperature allowed.

l Body diode electirical characteristics (Source-Drain) (Ta = 25C)

Inverse diode continuous,

Inverse diode direct current,

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Peak rate of fall of reverse

VGS = 0V, IS = 15A

l Typical transient thermal characteristics

l Electrical characteristic curves

Fig.1 Power Dissipation Derating Curve

Fig.2 Maximum Safe Operating Area

Fig.3 Normalized Transient Thermal

l Electrical characteristic curves

Fig.4 Avalanche Current vs. Inductive Load

Fig.5 Avalanche Power Losses

Fig.6 Avalanche Energy Derating Curve

l Electrical characteristic curves

Fig.7 Typical Output Characteristics(I)