Exam Support:: MOSFET(D) Equations

n-MOSFET(D):: (I-V) Equations

Gate to Source Voltage

iD = 0
VGS < VTN
(.)
W
i D k n (VGS VTN )V DS
L
W
2
2
i D = k n (VGS VTN )V DS V DS
L

VGS > VTN

Gate to drain Voltage

VGD > VTN

Drain current

Gate to Source Voltage

1 W
kn
2 L
1 W
iD = k n
2 L
VGS > VTN

Gate to drain Voltage

VGD < VTN

Drain current
Gate to Source Voltage

Cut off Mode

Gate to drain Voltage

Linear Drain current
(VDS < 1V)
Triode Drain current

Linear Mode

Saturation Mode

Drain current with

Linear/Saturation Drain to Source Voltage

Boundary

n-MOSFET(D):: Parameters
Process parameter [A/V2]
2

Current Gain [A/V ]

iD =

2
(VGS VTN )

2
(VGS VTN ) (1 + VDS )

VDS = VGS VTN

k n = nCox
W

n = kn

Early Voltage

1
VA

= 2qN a / Cox

Body Effect Parameter [ V ]

2

Oxide Capacitance [F/cm ]

Cox =

Threshold Voltage

K ox o
tox

VTN = VTO +

Zero Potential Current (VGS = 0)

I DSS

Depletion n-MOSFET Threshold Voltage

2
VTN < 0

VTN

2 f + VSB 2 f

Dr Ayhan Ozturk

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Exam Support:: MOSFET(D) Equations

n-MOSFET(D):: Small Signal Parameters

Transconductance [A/V]
g m = n (VGS VTN )
Transconductance [A/V]
g m = 2kn (W L ) I D
Transconductance [A/V]

2I D
VGS VTN

gm =

g mb = g m

Transconductance of Body [A/V]

Body effect

= 2 2 f + VSB
2

Gate to Source capacitance [F/cm ]

Gate to Drain capacitance [F/cm2]
Source to Body capacitance [F/cm ]

Drain to Body capacitance [F/cm2]

2
(W L)Cox + (W Lov )Cox
3
= (W Lov )Cox

C gs =
C gd

Csbo

Csb =

Cdb =

VSB
1 +
Vo

Cdbo
1+

Maximum operating frequency [Hz]

fT =

VSB
Vo

gm
2 (C gs + Cgd )

Dr Ayhan Ozturk

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Exam Support:: MOSFET(D) Equations

n-MOSFET(D):: Input Characteristics

VGS

VGD
iD

iD

IDSS

IDSS

Cut off
Mode
VGS

VGS

VTN

VG

VTN
VGD
iD

iD

Linear
Mode

IDSS

IDSS

VGS

VTN

VG

VT
VGD

VGS

iD

iD

Saturation
Mode

IDSS

IDSS

VTN

VGS
VGS

VTN

VG

VGD

Enhancement Shift all curve to positive Threshold Voltage (VTN > 0)

n-MOSFET

Dr Ayhan Ozturk

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Exam Support:: MOSFET(D) Equations

p-MOSFET(D):: (I-V) Equations

Gate to Source Voltage

iD = 0
VGS > VTP
(.)
W
i D k p (VGS VTP )V DS
L
W
2
i D = k p (VGS VTP )V DS V DS
2
L

VGS < VTN

Gate to drain Voltage

VGD < VTN

Drain current

Gate to Source Voltage

1 W
kp
2 L
1 W
iD = k p
2 L
VGS < VTP

Gate to drain Voltage

VGD > VTP

Drain current
Gate to Source Voltage

Cut off Mode

Gate to drain Voltage

Linear Drain current
(|VDS |< 1V)
Triode Drain current

Linear Mode

Saturation Mode

Drain current with

Linear/Saturation Drain to Source Voltage

Boundary

p-MOSFET(D):: Parameters
Process parameter [A/V2]
Current Gain

iD =

2
(VGS VTP )

2
(VGS VTP ) (1 + V DS )

VDS = VGS VTP

k p = p C ox

p = kp

Early Voltage

Body Effect Parameter

= 2qN d / C ox

Oxide Capacitance

1
VA

Cox =

Threshold Voltage

K ox o
tox

VTP = VTO +

Zero Potential Current (VGS = 0)

I DSS

p
2

VTP

2 f + V SB 2 f

VTP > 0

Depletion p-MOSFET Threshold

Dr Ayhan Ozturk

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Exam Support:: MOSFET(D) Equations

p-MOSFET(D):: Small Signal Parameters

Transconductance [A/V]
g m = P (VGS VTP )
Transconductance [A/V]
g m = 2k P (W L ) I D
Transconductance [A/V]

2I D
VGS VTP
= gm

gm =

Transconductance of Body [A/V]

g mb

Body effect

= 2 2 f + VSB

Gate to Source capacitance [F/cm2]

Gate to Drain capacitance [F/cm2]
Source to Body capacitance [F/cm ]

Drain to Body capacitance [F/cm2]

2
(W L)Cox + (W Lov )Cox
3
= (W Lov )Cox

Csbo

Csb =

Cdb =

VSB
1 +
Vo

Cdbo
1+

Maximum operating frequency [Hz]

C gs =
C gd

fT =

VSB
Vo

gm
2 (C gs + Cgd )

Dr Ayhan Ozturk

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Exam Support:: MOSFET(D) Equations

p-MOSFET(D):: Input Characteristics

VGS

VGD
iD

iD

IDSS

Cut off
Mode

IDSS

VTP

VGS
VGS

iD

Linear
Mode

VGD
VTP

iD

IDSS

IDSS

VGD

VGS
VTN

VGS

VTP

VGDQ

iD

Saturation
Mode

VGD

iD

IDSS

IDSS

VGD

VGS
VGS

VTP

VTN

VGD

Enhancement Shift all curve to negative Threshold Voltage (VTP < 0)

p-MOSFET

Dr Ayhan Ozturk

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