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Petosa 206 ch03 PDF
Petosa 206 ch03 PDF
Coupling to DRAs
Chapter 2 examined the basic DRAs and presented design equations for predicting
the resonant frequency and radiation Q-factor for the commonly used lower order
modes. The models for deriving these equations assumed the DRAs were in
isolation or mounted on an infinite perfect conducting ground plane and did not
account for the feeding mechanisms used to excite the DRAs. The selection of the
feed and that of its location both play an important role in determining which
modes are excited. This, in turn, will determine the input impedance and radiation
characteristics of the DRAs. The coupling mechanism can also have a significant
impact on the resonant frequency and Q-factor, which the previous equations fail
to predict. This chapter begins with a brief review of coupling theory and an
examination of the internal fields within rectangular and cylindrical DRAs. A
knowledge of the internal field configuration is essential for understanding how
the various feeds can excite different modes within the DRA. The more common
feeds are then surveyed and examples provided to highlight practical design
considerations.
3.1 COUPLING COEFFICIENTS
For most practical applications, power must be coupled into or out of the DRA
through one or more ports. (One notable exception is the DRA reflectarray, which
will be discussed in Chapter 9.) The type of port used and the location of the port
with respect to the DRA will determine which mode will be excited and how much
power will be coupled between the port and the antenna. The mode or modes
49
50
generated, the amount of coupling, and the frequency response of the impedance
are all important in determining the performance of the DRA. Although these
quantities are difficult to determine without using numerical methods, a great deal
of insight can be obtained by knowing the approximate field distributions of the
modes of the isolated DRA and by making use of the Lorentz Reciprocity
Theorem and some coupling theory borrowed from resonator circuits [1].
When coupling to a DRA, the source can typically be modeled as either an
electric or magnetic current, and the amount of coupling, , between the source
and the fields within the DRA can be determined by applying the reciprocity
theorem with the appropriate boundary conditions. For an electric source Js
(EDRA Js )dV
(3.1)
(H DRA M s )dV
(3.2)
where V is the volume occupied by the source within which the electric and/or
magnetic currents exist, while EDRA and HDRA are the electric and magnetic fields
within the DRA. Equation (3.1) states that in order to achieve strong coupling
using an electric current source (like a probe), then that source should be located in
an area of strong electric fields within the DRA. On the other hand, to achieve
strong coupling using a magnetic current source (like a loop or an aperture) then
from (3.2) the source should be located in an area of strong magnetic fields. It is
thus necessary to have a good understanding of the internal field structures of the
isolated DRA to determine where the feed should be placed to excite the desired
mode. The fields within cylindrical and rectangular DRAs will be examined in the
next section.
In addition to transferring power, the coupling mechanism to the DRA has a
loading effect that will influence the Q-factor of the DRA. An external Q-factor
(Qext) can be defined in terms of the coupling factor, :
Qext =
(3.3)
and the loaded Q-factor (QL) of the DRA can then be expressed as:
QL =
1
1
+
Q Qext
Q
1+
(3.4)
Coupling to DRAs
51
(k
2
y
+ kz2
j o
(3.5)
(3.6)
Hz =
(kz kx ) sin k
j o
xx
) cos(ky y)sin(kz z)
Ex = 0
(3.7)
(3.8)
( )
Ez = k y cos(kx x)sin(ky y)cos(kz z )
Ey = kz cos(kx x ) cos ky y sin(kz z )
(3.9)
(3.10)
( r 1)ko2 kx2
(3.11)
and
(3.12)
The ejt time dependence is suppressed in the above equations. Assuming magnetic
walls along air-dielectric interfaces parallel to the z-axis, then:
52
ky =
m
n
and k z =
,
w
b
The value can be defined as the fraction of a half-cycle of the field variation in
the z-direction and is given by:
kx
/d
(3.13)
For the lowest order mode (m = n = 1), a sketch of the field configuration is shown
in Figure 3.1. The Hx component of the magnetic field is dominant along the
center of the DRA, while the E-fields (predominantly Ey and Ez) circulate around
the Hx component. These fields are similar to those produced by a short magnetic
dipole. A plot of the relative amplitudes of the electric and magnetic fields in the
x-y plane of the DRA is shown in Figure 3.2. A knowledge of the relative
amplitudes of these fields as a function of location within the DRA is important
for determining where to place the feed mechanism to efficiently excite the DRA.
Figure 3.1
Sketch of the fields for the TEx1 mode of the rectangular DRA.
Coupling to DRAs
53
Ez
Hx
0
-1
-w/2
Figure 3.2
+w/2
0
y (at z = 0)
x
11
2h
2h
(3.14)
(3.15)
54
Figure 3.3
Sketches of the E-fields for selected higher-order modes within the rectangular DRA.
E J1(r ) cos
2h
E z = Er = H = 0
(3.16)
(3.17)
where Jo( ) and J1( ) are Bessel functions of the first kind, and is the
solution to Jo(a) = 0.
The TM01 fields are similar to those of the TE01 with the magnetic and
electric field components interchanged. For the HE11 mode of the cylindrical
DRA, the field components can be expressed as:
Ez J1(r ) cos
2h
cos
sin
(3.18)
Coupling to DRAs
Er
cos
J1(r )
sin
z
sin
(r )
2h
E J1(r )sin
H r J1(r ) cos
H
2h
2h
sin
cos
sin
cos
cos
J1(r )
cos
z
sin
(r )
2h
Hz 0
55
(3.19)
(3.20)
(3.21)
(3.22)
(3.23)
where is the solution to J1(a) = 0. The choice of cos or sin depends on the
location of the feed.
The fields for these three modes are sketched in Figure 3.4. Examples of the
relative field strengths for these modes are shown in Figures 3.5 and 3.6. The
actual values will depend on the dielectric constant and radius of the DRAs;
however, these figures are useful for visualizing the locations of high electric and
magnetic fields within the DRA for the different modes, to assist in determining
what type of feed is best suited and where the feed should be located to optimize
the DRA excitation. The following sections will examine the more conventional
coupling mechanisms in closer detail.
3.3 APERTURE COUPLING
One common method of exciting a DRA is through an aperture in the ground
plane upon which the DRA is placed. Figure 3.7 shows some of the aperture
shapes that have been used for exciting DRAs. The small rectangular slot is
probably the most widely used aperture [7-14]. By keeping the slot dimensions
electrically small, the amount of radiation spilling beneath the ground plane can be
minimized. Annular slots have also been used for exciting cylindrical DRAs [15],
while cross-shaped and C-shaped slots are used to excite circular polarization [1618]. The aperture can itself be fed by a transmission line (either microstrip or
coaxial) or a waveguide [19, 20], as shown in Figure 3.7. Aperture coupling offers
the advantage of having the feed network located below the ground plane,
isolating the radiating aperture from any unwanted coupling or spurious radiation
from the feed.
56
Figure 3.4
Coupling to DRAs
57
0.8
0.6
0.4
Hz (Ez)
E (H)
0.2
0
Figure 3.5
Example of relative field strength of the TE01 (TM01) mode in the cylindrical DRA.
0.8
0.6
Hr
Ez
0.4
0.2
Figure 3.6
Example of the relative field strength of the HE11 mode in the cylindrical DRA.
58
Figure 3.7
The electric fields within a rectangular slot are sketched in Figure 3.8. For
coupling purposes, the slot can be considered as an equivalent magnetic current
whose direction is parallel to the slot length. To achieve strong coupling to the
DRA, the aperture should be located in a region of strong magnetic fields, as
indicated by (3.2). Figure 3.9 shows a rectangular slot feeding a rectangular DRA.
x
The orientation of the slot will excite the TE 11 mode of the DRA [8]. Centering the
DRA over the slot will ensure strong coupling to the internal magnetic fields. Some
degree of impedance matching can be achieved by offsetting the DRA from the slot
center. A rectangular slot can also be used to excite the HE11 mode of a cylindrical
Coupling to DRAs
59
DRA [12] or the TE01 mode of a split-cylinder DRA, as shown in Figures 3.10 and
3.11 [9, 12].
Feeding the aperture with a microstrip transmission line is the most common
approach, since printed technology is easy to fabricate. Microstrip lines also offer a
Figure 3.8
Figure 3.9
60
Figure 3.10
Coupling to DRAs
Figure 3.11
61
0.4 o
(3.24)
62
Figure 3.12
where
e =
r + s
2
(3.25)
and r and s are the dielectric constants of the DRA and substrate,
respectively.
2) A fairly narrow slot width is usually chosen to avoid a large backlobe
component. A reasonable choice is:
w s = 0.2l s
(3.26)
g
4
(3.27)
Coupling to DRAs
63
The amount of coupling actually achieved using the above guidelines is not always
as high as desired. Oftentimes the coupling can be significantly improved simply
by slightly offsetting the DRA with respect to the slot. This solution requires
neither a second design iteration nor the fabrication of a new circuit and is an
attractive method for obtaining a good impedance match [2].
An example of a slot feed for a rectangular DRA design at 5.5 GHz with an
8% fractional impedance bandwidth is now illustrated. To design the DRA, the
procedure outlined in Section 2.3.2 can be followed. Using a material with a
dielectric constant of r = 10, the following DRA dimensions were chosen:
w = 14 mm, and d = h = 8 mm, as shown in Figure 3.13. Substituting these values
into (2.19) the theoretical resonant frequency is 5.6 GHz and from (2.24), the
radiation Q-factor is Qrad = 7.9, which translates to a fractional bandwidth of 8.9%.
The microstrip line was printed on a substrate have a dielectric constant of
s = 3.38 and thickness of 0.5 mm. Using (3.25) the effective dielectric constant is
e = 6.7, from (3.24) the slot length is ls = 8.4 mm, and from (3.26) the slot width
is ws = 1.7 mm. The stub length extension, from (3.27) is s = 8.3 mm, where a
guided wavelength g = 33.2 mm was calculated for the microstrip line shown in
Figure 3.13. Based on these initial calculations, several feed circuits were
fabricated with different combinations of slot length (ls) and stub length (s). For
these prototype circuits, a somewhat narrower dimension was chosen for the slot
width (ws = 1.0 mm) to help minimize the potential for high backlobes.
Figure 3.13
64
Figure 3.14 shows the effects of varying the slot length for a fixed stub length of
s = 5 mm. Increasing the slot length from 8 to 12 mm results in an increase in the
10-dB return loss bandwidth from 6.3% to 13.3% as well as an upward shift in the
frequency response. The increase in bandwidth might come at the expense of
higher backlobes, if there is increased radiation from the longer slots.
The effect of varying the stub length from s = 3 mm to 10 mm is seen in
Figure 3.15, where the slot length was kept constant at ls = 10 mm. A significant
amount of frequency tuning can be achieved by adjusting the stub length.
|S11| (dB)
-5
-10
ls = 8 mm
ls = 10 mm
ls = 12 mm
-15
-20
-25
4.0
4.5
5.0
5.5
6.0
Frequency (GHz)
Figure 3.14
6.5
7.0
Coupling to DRAs
65
As the stub length is reduced from 10 mm down to 3 mm, there is an upward shift
in the frequency response and an increase in the 10-dB return loss bandwidth.
Trimming the stub length could thus be a practical method for tuning the return
loss response of the DRA. Instead of fabricating several microstrip circuits with
different stub lengths, a single circuit could be fabricated with a stub length
somewhat larger than the value obtained using (3.27). If the desired impedance
response is not obtained, the stub could then be trimmed to improve the results.
0
|S11| (dB)
-5
-10
s = 3 mm
s = 5 mm
s = 7 mm
-15
s = 10 mm
-20
-25
4.0
4.5
5.0
5.5
6.0
Frequency (GHz)
Figure 3.15
6.5
7.0
66
A second method for tuning the impedance response is to offset the location of the
DRA with respect to the slot. Figure 3.16 shows the change in the impedance
response that occurs by offsetting the DRA a few millimeters from the center of
the slot. The response is shifted down in frequency by a significant amount,
without an appreciable narrowing of the impedance bandwidth. The results of
these measurements help confirm that the procedure outlined above for
determining the slot and stub dimensions is a useful design tool for slot-coupled
feeds for DRAs.
0
|S11| (dB)
-5
-10
-15
Centered
Offset
-20
-25
4.0
4.5
5.0
5.5
Frequency (GHz)
Figure 3.16
6.0
6.5
7.0
Coupling to DRAs
67
Figure 3.17
located adjacent to the DRA or can be embedded within it. The amount of
coupling can be optimized by adjusting the probe height and the DRA location.
Also, depending on the location of the probe, various modes can be excited.
A probe located adjacent to (or slightly inset into) a rectangular DRA, as
shown in Figure 3.18, will excite the TEx11 mode. Similarly, the HE11 mode of a
68
cylindrical DRA or the TE01 mode of the split cylinder can be excited with a
probe located adjacent to (or slightly inset into) the DRA, as in Figures 3.19 and
3.20. For a probe located in the center of a cylindrical (or ring) DRA, the TM01
mode is excited, as shown in Figure 3.21. One advantage of coaxial probe
excitation is the direct coupling into a 50- system without the need for a
matching network. Probes are useful at lower frequencies where aperture-coupling
may not be practical due to the large size of the slot required.
The probe length is generally chosen to be less than the height of the DRA, to
avoid probe radiation. (A notable exception is the hybrid monopole-DRA,
described in Section 4.5.2, where the probe is actually designed to act as both a
feed for the DRA and a monopole radiator.) Rigorous analyses for probe-fed
hemispherical and cylindrical DRAs have been carried out, showing the effects of
both the probe position and length on the input impedance and resonant frequency
Figure 3.18
Coupling to DRAs
69
of the DRA [33-35]; however, there are no simple equations to design the required
probe height for a given set of DRA dimensions and dielectric constant. In terms
of practicality, locating the probe feed adjacent to the DRA is preferred since it
does not require drilling into the DRA. (This, of course, cannot be avoided for the
TM01 mode of cylindrical DRAs where the probe must be at the center of the
DRA.) If the center conductor of a coaxial cable is used as the probe, one approach
is to begin with a probe height slightly taller than that of the DRA, then trimming
the height until the desired match is achieved. Similarly, if a flat metallic strip is
used, it is recommended to start with a taller, wider strip which can be then
trimmed for impedance tuning.
Figure 3.19
70
Figure 3.20
Figure 3.21
Coupling to DRAs
71
Figure 3.22
72
The amount of coupling from the microstrip line to the DRA can be controlled
to a certain degree by adjusting s in Figure 3.22, which represents the spacing
between the DRA and the line for the side-coupled case or the length of the line
underneath the DRA for the direct-coupled case. A more dominant parameter
affecting the degree of coupling is the dielectric constant of the DRA. For higher
values (r > 20), strong coupling is achieved; however, the maximum amount of
coupling is significantly reduced if the dielectric constant of the DRA is lowered.
This can be problematic if low dielectric constant values are required for obtaining
wideband operation. For series-fed linear arrays of DRAs (discussed in Chapter 9),
the lower level of coupling may not be an impediment, since each DRA element
usually only requires coupling a small amount from the microstrip feed line [3738].
Figure 3.23
Coupling to DRAs
73
Figure 3.24
74
Figure 3.25
The MSDRA can be designed using the equations for the rectangular DRA in
Section 2.4, with some modifications. To account for the effect of the insert and of
the microstrip substrate on the resonant frequency of the MSDRA, the dielectric
waveguide model equations are modified by including an effective permittivity
(eff) and effective height (Heff). Adopting a simple static capacitance model, the
effective permittivity of the MSDRA is calculated using:
eff =
H eff
h / r + t / i + s / s
(3.28)
where r, i, and s are the dielectric constants of the DRA, insert, and substrate,
respectively. The effective height (Heff) is simply the sum of the DRA height (h),
insert thickness (t), and substrate thickness (s):
H eff = h + t + s
(3.29)
Equations (3.28) and (3.29) are substituted into (2.19), with eff replacing r and
2Heff replacing b.
The selection of the insert thickness and dielectric constant should be based
on two considerations. The first is to ensure that the insert itself does not radiate.
The dielectric waveguide model equations can be used with the insert parameters
to ensure that the resonant frequency of the insert is well above the desired
frequency of operation. The second consideration relates to the impedance
bandwidth obtained by the various inserts. In general, the higher the dielectric
constant of the insert, the narrower the impedance bandwidth, for a given insert
thickness. MSDRAs with higher dielectric constant inserts also show a greater
Coupling to DRAs
75
sensitivity to their position with respect to the open end of the microstrip line.
Since one of the objectives of using the MSDRA is to obtain a wide impedance
bandwidth, the insert dielectric constant should be chosen accordingly. This places
an upper bound on permittivity. Based on the investigations carried out in [39], a
set of guidelines was proposed for designing the MSDRA.
(1) Determine the dimensions (w, h, d ) of the DRA, using the dielectric
waveguide model equations for the desired resonant frequency and
radiation Q-factor. The dielectric constant of the DRA should be
chosen within the range of approximately 10 r 12 for wideband
operation.
(2) Choose an insert dielectric constant in the range of 20 i 40 and
an insert thickness (t) such that 0.1 < T < 0.3 (where T = t/(t+h)).
Ensure that the resonant frequency of the isolated insert is well above
the desired frequency of operation by substituting the insert
parameters into the dielectric waveguide model equations.
(3) Estimate the resonant frequency of this MSDRA structure by using
(2.19) with the effective dielectric constant (eff) and effective height
(Heff), based on the insert parameters chosen in (2). The insert
parameters or the DRA dimensions might require some adjustment if
there is a significant shift in the desired resonant frequency.
(4) Once fabricated, some experimental optimization may be required to
maximize the coupling. The simplest form of optimization is done by
adjusting the position of the MSDRA with respect to the open end of
the microstrip line. If this is not sufficient, a second iteration of the
MSDRA parameters may be required.
Using these guidelines, several MSDRA designs have been carried out at various
frequency bands, achieving impedance bandwidths of up to about 20% [39]. For
the single insert case, an empirical study has led to design guidelines for the
optimum values of the dielectric constant and thickness [41]:
i =
t=
o r
Zo
c
4 fo i
(3.30)
(3.31)
76
The effects of changing the position of the MSDRA with respect to the open
circuit of the microstrip transmission line can be seen in the example shown in
Figure 3.26. The frequency response of the return loss was measured for various
positions of the MSDRA, such that the stub extension (ls) ranged from +3 mm to
-3 mm, where the positive values indicate that the stub extends past the MSDRA
while the negative values indicate that the MSDRA extends past the end of the
open circuit. The measured return loss curves for the various positions are overlaid
in Figure 3.27.
Figure 3.26
|S11| (dB)
-5
-10
-15
s = -3 mm
s = -2 mm
s = -1 mm
s = 0 mm
s = +1 mm
s = +2 mm
s = +3 mm
-20
-25
Figure 3.27
9
10
Frequency (GHz)
11
12
Coupling to DRAs
77
By simply moving the position of the MSDRA with respect to the open, the return
loss can be tuned for a broadband response. For this particular case, the position
with (ls = 0) offered the widest frequency response. In general, either a positive or
a negative value for ls could result in the widest response. The length of the stub
can also be used to slightly shift the frequency response for fine tuning.
3.6 COPLANAR COUPLING
Coupling to DRAs can also be achieved by using coplanar feeds with some
examples shown in Figure 3.28 [42-48]. Open-circuit coplanar waveguides can be
used to directly feed DRAs similar to the open-circuit microstrip lines examined
earlier. Additional control for impedance matching can be achieved by adding
stubs or loops at the end of the line. Figure 3.29 shows a cylindrical DRA coupled
to a coplanar loop. The coupling level can be adjusted by positioning the DRA
over the loop. The coupling behavior of the coplanar loop is similar to that of the
coaxial probe, but the loop offers the advantage of being nonobtrusive. By moving
the loop from the edge of the DRA to the center, one can couple into either the
HE11 mode or the TE01 mode of the cylindrical DRA [42]. As with aperture
coupling, the dimensions of the coplanar feed should be chosen large enough to
ensure proper coupling, but small enough to avoid excessive radiation in the
backlobe.
Figure 3.28
78
Figure 3.29
Coupling to DRAs
Figure 3.30
79
80
1
I o2
so
(E J s )dS
(3.32)
where E represents the electric fields of the DRA, Js is the applied source current
density on the probe, Io is the magnitude of the current on the probe, and the
integral is carried out over the surface So of the probe. The electric fields of the
DRA will, in turn, depend on the source excitation, and are determined using:
E=
so
(G J s )dS
(3.33)
where G represents Green's function for the DRA. Thus the determination of the
input impedance requires a knowledge of Green's function of the DRA. Using
some simplifying assumptions about a single-mode operation and the currents on
the probe, the Green's function for a hemispherical DRA was first derived in [51]
and was then used to predict the input impedance of the probe-fed DRA operating
in the TE111 mode. Moderately good agreement was achieved between the
predicted and measured input impedance. More rigorous derivations soon
followed [52-53] which led to more accurate predictions. This technique was also
applied to a probe-fed hemispherical DRA operating in the TM101 mode [54], as
well as other variations of hemispherical DRA geometries [55-57]. The input
impedance of conformal strip feeds [58] and aperture feeds [59-62] can also be
analyzed using Green's function approach. The advantage to this technique is the
relatively fast computation time required to obtain the input impedance. It is,
therefore, a useful method for analyzing the effects of altering probe dimensions
and probe location and can be used for optimizing the input impedance. The main
drawback is its limitation to hemispherical DRA geometries, due to the fact that
Green's function has only been determined for DRAs of hemispherical shape. For
other DRA shapes, different analytical techniques are required.
3.8.2 Frequency Domain Analysis
Two common frequency domain techniques that have been used to analyze DRAs
are the method of moments (MOM) and the finite element method (FEM). The
MOM involves discretizing the antenna into a number of small segments and
solving for a set of unknown coefficients, each coefficient representing the current
on one segment due to a known incident field [63]. Once the currents are
determined, the input impedance of the antenna can then be calculated. The MOM
was first developed for wire or metal antennas of arbitrary shape, but can be
Coupling to DRAs
81
82
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83
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