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  • Viii Abbreviations

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    This document contains a list of abbreviations commonly used in semiconductor manufacturing and materials science. It provides over 50 abbreviations for terms related to materials, processes, measurement techniques, and scales of integration. Some examples included are AFM for atomic force microscope, CVD for chemical vapor deposition, FESEM for field emission scanning electron microscope, ILD for interlayer dielectric, and MOS for metal oxide semiconductor.

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    Abbreviations in nano electronics

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    This document contains a list of abbreviations commonly used in semiconductor manufacturing and materials science. It provides over 50 abbreviations for terms related to materials, processes, measurement techniques, and scales of integration. Some examples included are AFM for atomic force microscope, CVD for chemical vapor deposition, FESEM for field emission scanning electron microscope, ILD for interlayer dielectric, and MOS for metal oxide semiconductor.

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    © All Rights Reserved
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    1 views2 pages

    Viii Abbreviations

    Uploaded by

    anilgaikawad
    This document contains a list of abbreviations commonly used in semiconductor manufacturing and materials science. It provides over 50 abbreviations for terms related to materials, processes, measurement techniques, and scales of integration. Some examples included are AFM for atomic force microscope, CVD for chemical vapor deposition, FESEM for field emission scanning electron microscope, ILD for interlayer dielectric, and MOS for metal oxide semiconductor.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 2

    Abbreviations

    Al : Aluminium
    2-D : Two Dimension
    3-D : Three Dimension
    AFM : Atomic Force Microscope
    AFM : Atomic Force Microscopy
    Ag : Silver
    BEOL : Back End of Line
    C : Carbon
    CMP : Chemical Mechanical Polishing
    CO2 : Carbon Dioxide
    C-V : Capacitance Voltage
    CVD : Chemical Vapour Deposition
    DI : Distilled
    EDX : Energy Dispersive x-ray Spectroscopy
    F : Fluorine
    FEOL : Front End of Line
    FESEM : Field Emission Scanning Electron Microscope
    FSG : Fluorosilicate Glass (F-SiO2)
    FTIR : Fourier Transform Infrared
    GSI : Giant Scale Integration
    HF : Hydrofluoric Acid
    HMDS : HexaMethylDiSilazine
    IBM : International Business Machine
    IC : Integrated circuit
    ILD : Interlayer Dielectric
    IMD : Intermetal Dielectric
    IPA : Isopropyl Alcohol
    IR : Infrared
    ITRS : International Technology Roadmap for Semiconductors
    I-V : Current- Voltage
    k : Dielectric constant
    LCO2 : Liquid Carbon Dioxide
    LO : Longitudinal Optic
    LSI : Large Scale Integration
    MeV : Mega Electron Volt
    MIS : Metal Insulator Semiconductor
    MLM : Multilevel Metallization
    MOS : Metal Oxide Semiconductor
    MSI : Medium Scale Integration
    MSQ : Methyl siliesquioxane
    N2 : Nitrogen

    xiii
    nm : Nanometer
    ORMOSIL : Organically Modified Silicates
    OSG : Organo-Silicate Glass
    RC : Resistance Capacitance
    RF : Radio Frequency
    RI : Refractive index
    RMS : Root Mean Square
    RPM : Run per Minute
    SC : Supercritical
    SEM : Scanning Electron Microscopy
    SHI : Swift heavy ions
    Si : Silicon
    SiO2 : Silicon dioxide
    SOC : System-On-Chip
    SOG : Spin-On Glass
    SSI : Small Scale Integration
    SSQ : Siliesquioxane
    TCE : Trichloroethylene
    TEFS : Triethoxyfluorosilane
    TEOS : Tetraethylorthosilicate
    TMCS : Trimethylcholorosilane
    ULSI : Ultra Large Scale Integrated circuit
    UV : Ultra Violet
    VLSI : Very Large Scale Integrated Circuit
    W : Tungsten
    XRD : X-ray diffractometer

    xiv

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