Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 2

2.1
Sketch

6.625 10 3 10 6.54 10
34 10
5

1.90 1.6 10
_______________________________________ 19

2.2 cm
Sketch or
_______________________________________ 0.654 m
_______________________________________
2.3
Sketch
_______________________________________
2.6
2.4
h 6.625 10 34
2 x (a) p
From Problem 2.2, phase t 550 10 9

= constant 1.205 10 27 kg-m/s
Then
p 1.2045 10 27
2 dx
1.32 10 3 m/s
dx m 9.11 10 31
0, p
dt dt 2 or 1.32 10 5 cm/s
2 x h 6.625 10 34
From Problem 2.3, phase t (b) p

440 10 9
= constant
Then 1.506 10 27 kg-m/s

2 dx dx p 1.5057 10 27
0, p 1.65 10 3 m/s
dt dt 2 m 9.11 10 31

_______________________________________ or 1.65 10 5 cm/s

(c) Yes
2.5 _______________________________________
hc hc
E h
E 2.7
Gold: E 4.90 eV (a) (i)

4.90 1.6 10 19 J p 2mE
2 9.11 10 31 1.2 1.6 10 19
So,
5.915 10 25 kg-m/s

6.625 10 3 10 2.54 10
34 10
5

4.90 1.6 10
19

h

6.625 10 34
1.12 10 9 m
p 5.915 10 25
cm
o
or or 11.2 A
0.254 m
(ii)
Cesium: E 1.90 eV

1.90 1.6 10 19 J p
2 9.11 10 31 12 1.6 10 19
24
So, 1.87 10 kg-m/s
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
6.625 10 34 _______________________________________
24
3.54 10 10
1.8704 10 2.9
m hc
o E p h p
or 3.54 A p
(iii) Now
p
2 9.11 10 31
120 1.6 10 19
p e2
Ee and
5.915 10 24 kg-m/s 2m
6.625 10 34
2
h 1 h
1.12 10 10 m pe Ee
5.915 10 24 e 2m e
Set E p E e and p 10 e
o
or 1.12 A
Then
2 2
hc 1 h 1 10h

p 2m e 2m p
which yields
100h
p
2mc
hc hc 2mc 2
Ep E 2mc
(b) p 100h 100

2 9.11 10 31 3 10 8 2

p
2 1.67 10 27
1.2 1.6 10 19

100
23
2.532 10 kg-m/s 1.64 10 15 J 10.25 keV
34
6.625 10 _______________________________________
2.62 10 11
2.532 10 23
m
o 2.10
or 0.262 A h 6.625 10 34
_______________________________________
(a) p
85 10 10
2.8 7.794 10 26 kg-m/s

3 3 p 7.794 10 26
E avg kT 0.0259 0.03885 eV 31
8.56 10 4 m/
2 2 m 9.11 10
Now s
p avg 2mE avg or 8.56 10 6 cm/s

2 9.11 10 31 0.03885 1.6 10 19 E
1
2
m 2
1
2

9.11 10 31 8.56 10 4 2

or
3.33 10 21 J
p avg 1.064 10 25 kg-m/s
3.334 10 21
Now or E 19
2.08 10 2
1.6 10
h 6.625 10 34 eV
6.225 10 9 m
p 1.064 10 25 (b) E
1
2

9.11 10 31 8 10 3 2

or
o 2.915 10 23 J
62.25 A
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
2.915 10 23
or E 19
1.82 10 4 1.054 10 34
1.6 10 p 8.783 10 26 kg
10
eV 12 10

p m 9.11 10 31 8 10 3 -m/s
7.288 10 27
kg-m/s dE d p2
(ii) E p p
dp dp 2m
h 6.625 10 35 2p pp
9.09 10 8 m p
p 7.288 10 27 2m m
o Now p 2mE
or 909 A
_______________________________________
2 9 10 31 16 1.6 10 19
24
2.11 2.147 10 kg-m/s
(a) so

E h
hc


6.625 10 3 10 34
8
E
2.1466 10 8.783 10
24 26

1 10 10
9 10 31
15
1.99 10 J 2.095 10 19 J
Now 2.095 10 19
E 1.99 10 15 or E 1.31 eV
E e V V 1.6 10 19
e 1.6 10 19 (b) (i) p 8.783 10 26 kg-m/s
V 1.24 10 4 V 12.4 kV (ii)
(b) p
2 5 10 28 16 1.6 10 19
p 2mE
2 9.11 10 31
1.99 10 15
5.06 10 23
kg-m/s
6.02 10 23 kg-m/s
Then
E
5.06 10 8.783 10
23 26

h 6.625 10 34 5 10 28
23
1.10 10 11 8.888 10 21 J
p 6.02 10
m 8.888 10 21
or E 19
5.55 10 2
or 1.6 10
o
eV
0.11 A _______________________________________
_______________________________________
2.14

1.054 10 34
p 1.054 10 32
x 10 2

kg-m/s
2.12 p 1.054 10 32
1.054 10 34 p m
p m 1500
x 10 6 7 10 36
m/s
1.054 10 28 kg-m/s _______________________________________
_______________________________________

2.13
(a) (i) px
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

2.15 2 1
Et V x 1 2 j 1 2
t
(a)
t
1.054 10 34 Dividing by 1 2 , we find
t 8.23 10 16

0.8 1.6 10 19
2 1 2 2

1 2 1

2 1 2

2 x 1 x 2 1 2 x x
2
s 2m
1.054 10 34
(b) p 1 2 1 1
x 1.5 10 10 V x j
7.03 10 25 kg-m/s 2 t 1 t
_______________________________________

2.16 Since 1 is a solution, then

(a) If 1 x, t and 2 x, t are 2 1 2 1 1 1
solutions to V x j
2m 1 x 2
1 t
Schrodinger's wave equation, then
Subtracting these last two equations, we have
2 1 2 2 2 1 2

1 x, t 1 x, t
2 2
2 x 1 2 x x
2
V x x , t j 2m
1
2m x 2 t
and 1 2
j
2 t
2 2 x, t 2 x , t
2
V x 2 x, t j Since 2 is also a solution, we have
2m x 2
t
2 1 2 2 1 2
Adding the two equations, we obtain V x j
2 2 2m 2 x 2
2 t
1 x, t 2 x, t Subtracting these last two equations, we obtain
2m x 2
V x 1 x, t 2 x, t 2

2

1 2
V x 0
2m 1 2 x x
This equation is not necessarily valid, which
j 1 x, t 2 x, t
t means that 1 2 is, in general, not a
which is Schrodinger's wave equation. So solution
1 x, t 2 x, t is also a solution. to Schrodinger's wave equation.
_______________________________________
(b) If 1 x, t 2 x, t were a solution
2.17
to 3
x
Schrodinger's wave equation, then we
A dx 1
2
cos 2
could write 1 2
2 2 x sin x
1 2 V x 1 2 A2
3
1
2m x 2 2 2 1

j 1 2 3 1
t A2 1
which can be written as 2 2
1
so A 2
2 2 2 2 1 1 2 2
1 2 2
2m x 2
x 2
x x
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
1 ao
or A 2
2 2x

2
exp
_______________________________________ a a dx
o ao o
4
2.18
1 / 2 2 ao 2x ao 2

nx dx 1 exp
A
2 2
cos ao 2
1 / 2
ao ao 4

or
x sin 2nx 1 / 2
A2 1 1
2 4 n 1 / 2 P 1 exp 1 exp
2
1 1 1
A2 1 A2 which yields
4 4 2 P 0.239
or A 2 (c)
ao 2
_______________________________________ 2 x
P
0
ao
exp dx

a o
ao
2 2x
2.19


ao exp
0
a o
dx

dx 1
*
Note that 2 ao 2x
ao
0 exp


Function has been normalized. ao 2 ao 0

(a) Now 1 exp 2 1

ao 2
which yields
4
2 x P 0.865
P
0
ao
exp

dx
a o _______________________________________
ao
4 2.20
2 2x

2

exp dx

P x dx
ao ao a/4
2 2 x
0

2 ao 2x ao 4
(a) a
cos
2
dx
exp

0

ao 2 ao 0 2x
or sin a/4
2 x a

a 2
2a o 1 4
P 1 1 1 exp 0
exp a
4a o 2
a
which yields sin
P 0.393 2 4 2

(b) a 2 4
ao 2
a
x
2
2
P ao
exp
a
dx

o
2 a 1 a

ao
4 a 8 4
or P 0.409
a/2
2 2 x
(b) P
a/4
a
cos
a
dx
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
2x 4x
sin a/2
sin a/2
2 x a 2 x a

a 2 a 2 2
4 a/4 4 a/4
a a

sin
2 a sin a 2
2 a sin 2 a sin


a 4 4 8 4 a 4 8 8 8



a

a
a a
or P 0.25
1 1 1 a / 2
2 0 2 2 2x

4 8 4 (c) P sin
a a
dx
or P 0.0908 a / 2
a / 2
2 2 x

4x
(c) P cos
a a
dx
2 x

a
sin

a / 2

a / 2

2x a 2 2
sin a / 2 4 a / 2
a
2 x a

a 2 4
a / 2
a
2 a sin 2 a sin 2


a 4 8 4 8

a a

2 a sin a sin or P 1

a 4 4 4 4 _______________________________________

a a
or P 1 2.22
_______________________________________ 8 10 12
(a) (i) p 10 4 m/s
k 8 10 8
2.21 or p 10 6 cm/s
a/4
2 2 2x
(a) P
0
a
sin
a
dx

2

2
7.854 10 9 m
k 8 10 8
4x
sin a/4
o
2 x a or 78.54 A

a 2 2 (ii) p m 9.11 10 31 10 4
4 0
a 9.11 10 kg-m/s 27

1 1 2

2 a sin
E m 2 9.11 10 31 10 4
2 2
a 8 8
4.555 10 23 J
a
or P 0.25
4.555 10 23
or E 2.85 10 4
a/2 1.6 10 19
2 2 2x
(b) P a
sin
a
dx

eV
a/4 1.5 1013
(b) (i) p 10 4 m/s
k 1.5 10 9
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
or p 10 6 cm/s
2 2
2 2
4.19 10 9 k 4.32 10 8 m
k 1.5 10 9 1.454 10 8
1
m
o k 4.32 10 8 5 10 4
or 41.9 A
2.16 10 13 rad/s
p 9.11 10 27 kg-m/s
(ii)
(b)
p 9.11 10 31 10 6
E 2.85 10 4 eV 25
_______________________________________ 9.11 10 kg-m/s
34
6.625 10
2.23 25
7.27 10 10
9.11 10
(a) x, t Ae j kx t m

(b) E 0.025 1.6 10 19 1
m 2
2
k
2
8.64 10 9 m
7.272 10 10
1

1
2

9.11 10 31 2 8.64 10 9 10 6 8.64 10 15
rad/s
so 9.37 10 4 m/s 9.37 10 6 _______________________________________
cm/s
For electron traveling in x direction, 2.25
9.37 10 6 cm/s
2 n 2 2
n 2 1.054 10 34 2 2

p m 9.11 10 31 9.37 10 4 En
2ma 2


2 9.11 10 31 75 10 10 2

26
8.537 10 kg-m/s
E n n 2 1.0698 10 21 J
h 6.625 10 34 or

p

8.537 10 26
7.76 10 9
En

n 2 1.0698 10 21
m 1.6 10 19

or E n n 2 6.686 10 3 eV
2 2 Then
k 8.097 10 8 m
7.76 10 9 E1 6.69 10 3 eV
1
E 2 2.67 10 2 eV
k 8.097 10 8 9.37 10 4 E 3 6.02 10 2 eV
or 7.586 10 13 rad/s _______________________________________
_______________________________________
2.26
(a)
2.24
(a)
p m 9.11 10 31 5 10 4 En
2 n 2 2

n 2 1.054 10 34 2 2

4.555 10 26 kg-m/s 2ma 2

2 9.11 10 31 10 10 10 2

34

n 2 6.018 10 20 J
h 6.625 10 or
1.454 10 8
p 4.555 10 26
En

n 2 6.018 10 20
n 2 0.3761 e

m 19
1.6 10
V
Then
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
E1 0.376 eV _______________________________________
E 2 1.504 eV
2.29
E 3 3.385 eV Schrodinger's time-independent wave
hc equation
(b)
2 x 2m
E 2 E V x x 0
E 3.385 1.504 1.6 10 19 x 2
3.01 10 19 J We know that
a a
x 0 for x and x
2 2
We have

6.625 10 3 10 34 8
V x 0 for
a
x
a
3.01 10 19 2 2
6.604 10 7 m
or 660.4 nm so in this region
_______________________________________
2 x 2mE
2 x 0
2.27 x 2
2 n 2 2 The solution is of the form
(a) E n x A cos kx B sin kx
2ma 2 where

15 10 3


n 2 1.054 10 34 2
2 k
2mE
2

2 15 10 3 1.2 10 2 2
Boundary conditions:

15 10 3 n 2 2.538 10 62 x 0 at x
a
, x
a
or n 7.688 10 29 2 2
(b) E n 1 15 mJ First mode solution:
(c) No 1 x A1 cos k 1 x
_______________________________________ where
2 2
2.28 k1 E1
For a neutron and n 1 :
a 2ma 2
Second mode solution:
2 x B 2 sin k 2 x
E1
2 2

1.054 10 2 34 2
where
2ma 2
2 1.66 10 27 10 14 2
2 4 2 2
k2 E2
3.3025 10 13 J a 2ma 2
or Third mode solution:
E1
3.3025 10 13
2.06 10 6 eV 3 x A3 cos k 3 x
19
1.6 10 where
For an electron in the same potential well: 3 9 2 2
E1
1.054 10 34 2 2 k3
a
E3
2ma 2
2 9.11 10 10 31 14 2 Fourth mode solution:
4 x B 4 sin k 4 x
6.0177 10 10 J
or where
6.0177 10 10 4 16 2 2
E1 3.76 10 9 eV k4 E4
1.6 10 19 a 2ma 2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
_______________________________________ n
k z z , n z 1, 2, 3...
2.30 a
The 3-D time-independent wave equation in From Equation (1) above, we have
cartesian coordinates for V x , y , z 0 is: k x2 k y2 k z2 k 2 0
or
x, y , z
2
x, y , z
2
x, y , z
2
2mE
k x2 k y2 k z2 k 2
x 2
y 2
z 2
2
so that

2mE
x, y , z 0 E E nx n y n z
2 2 2
2

n x n 2y n z2
2 2ma
Use separation of variables, so let _______________________________________
x, y , z X x Y y Z z
Substituting into the wave equation, we 2.31
obtain (a)
2 x, y 2 x, y 2mE
x, y 0
x 2
y 2
2
Solution is of the form:
x, y A sin k x x sin k y y
2 X 2Y 2Z We find
YZ XZ XY x, y
x 2 y 2 z 2 Ak x cos k x x sin k y y
x
2mE 2 x, y
XYZ 0 Ak x2 sin k x x sin k y y
2 x 2

2mE
Dividing by XYZ and letting k 2 , x, y
2 Ak y sin k x x cos k y y
we y
find 2 x, y
(1) Ak y2 sin k x x sin k y y
y 2
1 2 X 1 2Y 1 2 Z
k2 0 Substituting into the original equation, we
X x 2 Y y 2 Z z 2 find:
We may set 2mE
(1) k x2 k y2 0
1 2 X 2 X 2
2 k x2 k x2 X 0
X x x 2 From the boundary conditions,
Solution is of the form A sin k x a 0 , where a 40 A
o

X x A sin k x x B cos k x x
nx
Boundary conditions: X 0 0 B 0 So k x , n x 1, 2, 3, ...
a
nx
and X x a 0 k x Also A sin k y b 0 , where b 20 A
o
a
where n x 1, 2, 3.... n y
So k y , n y 1, 2, 3, ...
Similarly, let b
1 2Y 1 2Z Substituting into Eq. (1) above
k y2 and 2 k z2
Y y 2 n x n 2y 2
2
Z z 2 2

E nx n y
Applying the boundary conditions, we find 2m a 2 b 2
n y
ky , n y 1, 2, 3.... (b)Energy is quantized - similar to 1-D result.
a There can be more than one quantum state
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
per given energy - different than 1-D result. 2m
_______________________________________ k2 2
E VO

2.32 Term with B 2 represents incident wave and
(a) Derivation of energy levels exactly the
term with A2 represents reflected wave.
same as in the text
Region I, x 0
(b) E
2 2 2
n 2 n12 2 1 x 2mE
2ma 2 1 x 0
For n 2 2, n1 1 x 2
2
Then General form of the solution is
3 2 2
E 1 x A1 exp jk1 x B1 exp jk1 x
2ma 2 where
o
(i) For a 4 A 2mE
k1
E

3 1.054 10 34 2
2 2

2 1.67 10 27 4 10 10 2 Term involving B1 represents the
transmitted wave and the term involving A1
6.155 10 22 J
or represents reflected wave: but if a particle is
transmitted into region I, it will not be
6.155 10 22 reflected so that A1 0 .
E 3.85 10 3 eV
1.6 10 19 Then
1 x B1 exp jk 1 x

2 x A2 exp jk 2 x B 2 exp jk 2 x
(b)
Boundary conditions:
(1) 1 x 0 2 x 0
(ii) For a 0.5 cm 1 2
(2)
x x 0 x x0

E

3 1.054 10 34 2
2
Applying the boundary conditions to the
solutions, we find

2 1.67 10 27 0.5 10 2 2
B1 A2 B 2
3.939 10 36 J k 2 A2 k 2 B 2 k 1 B1
or

3.939 10 36 Combining these two equations, we find

E 2.46 10 17 eV
1.6 10 19 k k
_______________________________________ A2 2 1 B 2
k 2 k1
2.33 2k 2
(a) For region II, x 0 B1 B 2
k 2 k1
2 2 x 2m
E VO 2 x 0 The reflection coefficient is
x 2 2 A2 A2* k 2 k1
2

General form of the solution is R

B 2 B 2* k 2 k1
2 x A2 exp jk 2 x B 2 exp jk 2 x The transmission coefficient is
where
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

T 1 R T
4k 1 k 2
T 16
0.1
1
0.1

exp 2 4.85976 10 4 10
9 10

k1 k 2 2 1.0 1.0
_______________________________________ 0.0295
(b) For a 12 10 10 m
2.34
2 x A2 exp k 2 x T 16
0.1
1
0.1

exp 2 4.85976 10 12 10
9 10

1.0 1.0
x
2
1.24 10 5
P exp 2k 2 x
A2 A2* (c) J N t e , where N t is the density of
transmitted electrons.
2m V o E E 0.1 eV 1.6 10 20 J
where k2
2

1
m 2
1

9.11 10 31 2

2 9.11 10 31 3.5 2.8 1.6 10 19 2 2
1.874 10 5 m/s
1.054 10 34
1.874 10 7 cm/s
k 2 4.286 10 9 m 1

o
(a) For x 5 A 5 10 10 m 1.2 10 3 N t 1.6 10 19 1.874 10 7
P exp 2k 2 x N t 4.002 10 8 electrons/cm 3
Density of incident electrons,

exp 2 4.2859 10 9 5 10 10 Ni
4.002 10 8
1.357 10 10 cm
0.0138 0.0295
o 3
(b) For x 15 A 15 10 10 m
_______________________________________

P exp 2 4.2859 10 9 15 10 10 2.36
2.61 10 6 E E
T 16 1 exp 2k 2 a

o
(c) For x 40 A 40 10 10 m VO VO
(a) For m 0.067 m o

P exp 2 4.2859 10 9 40 10 10 2 m V O E
15
k2
1.29 10 2
_______________________________________

1/ 2
2 0.067 9.11 10 31 0.8 0.2 1.6 10 19

2.35
E
1.054 10 34 2

E
T 16 1 exp 2k 2 a or

Vo Vo k 2 1.027 10 9 m 1
2m V o E Then
where k2 0.2 0.2
2 T 16 1
0. 8 0.8

2 9.11 10 31 1.0 0.1 1.6 10 19
exp 2 1.027 10 9 15 10 10
34
1.054 10 or
T 0.138
k 2 4.860 10 9 m
(b) For m 1.08 m o
or 1

(a) For a 4 10 10 m
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
2.38
Region I x 0 , V 0 ;
Region II 0 x a , V V O
k2 = Region III x a , V 0
(a) Region I:

1/ 2
21.08 9.11 10 31 0.8 0.2 1.6 10 19 1 x A1 exp jk1 x B1 exp jk1 x

1.054 10 34 2
(incident) (reflected)
or
k 2 4.124 10 9 m 1
Then
0.2 0.2 where
T 16 1
0.8 0.8 2mE
k1
2

exp 2 4.124 10 9 15 10 10 Region II:
or
T 1.27 10 5 2 x A2 exp k 2 x B 2 exp k 2 x
_______________________________________ where
2 m V O E
2.37 k2
E E 2
T 16 1 exp 2k 2 a
Region III:
Vo Vo
2m V o E 3 x A3 exp jk 1 x B3 exp jk 1 x
where k2
2 (b)
In Region III, the B3 term represents a

2 1.67 10 27 12 1 10 6 1.6 10 19 reflected wave. However, once a particle
is transmitted into Region III, there will
34
1.054 10 not be a reflected wave so that B3 0 .
1
7.274 10 14
m (c) Boundary conditions:
(a) At x 0 : 1 2
A1 B1 A2 B 2
T 16
1
1
1
exp 2 7.274 10 10
14 14
d 1 d 2

12 12
dx dx
1.222 exp 14.548
5.875 10 7 jk 1 A1 jk 1 B1 k 2 A2 k 2 B 2
(b)
At x a : 2 3

T 10 5.875 10 7
A2 exp k 2 a B 2 exp k 2 a

1.222 exp 2 7.274 10 14 a
A3 exp jk 1 a

2 7.274 10 14
a ln

1.222
6

d 2 d 3
5.875 10
dx dx
or a 0.842 10 14 m
k 2 A2 exp k 2 a k 2 B 2 exp k 2 a
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

jk 1 A3 exp jk 1 a
A1 A1*
A3 A3*
k 2

k 12 exp 2k 2 a
The transmission coefficient is defined as 4k 1 k 2 2 2

A3 A3*
T Substituting the expressions for k 1 and
A1 A1* k 2 , we find
so from the boundary conditions, we want
to solve for A3 in terms of A1 .
2mVO
k12 k 22
Solving 2
for A1 in terms of A3 , we find and
2mVO E 2mE
jA3 k12 k 22 2
A1
4k 1 k 2
k 2
2 k 2
1 exp k a exp k a
2 2 2
2
2m
VO E E
2 jk1 k 2 exp k 2 a exp k 2 a
2

2

exp jk 1 a 2m E
2
VO 1 E

VO
We then find
Then

2
2mVO
A3 A *
3 2
exp 2k 2 a

A1 A *
1
2m 2 E
16 2 VO 1 E
VO

A1 A1*
A3 A3*
k 2

k 12 exp k 2 a
A3 A3*
4k 1 k 2 2 2
E E
16 1 exp 2k 2 a
exp k 2 a
2
VO VO
Finally,
4k k exp k 2 a exp k 2 a
2 2
1 2
2
A3 A3* E E
We have T 16 1 exp 2k 2 a
*
A1 A VO VO
2 m V O E 1
k2 _____________________________________
2
If we assume that VO E , then k 2 a
will
2.39
be large so that
Region I: V 0
exp k 2 a exp k 2 a
2 1 x 2mE
We can then write 1 x 0
x 2
2
A1 A1*
A3 A3*
k 2

k 12 exp k 2 a
2
1 x A1 exp jk1 x B1 exp jk1 x
4k 1 k 2 2 2

incident reflected

where
4k12 k 22 exp k 2 a
2

which becomes
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
2mE 2 3
k1
2 x x
Region II: V V1
k 2 A2 exp jk 2 a k 2 B 2 exp jk 2 a
2 2 x 2m E V1
2 x 0
x 2 2 k 3 A3 exp jk 3 a
But k 2 a 2n
2 x A2 exp jk 2 x B 2 exp jk 2 x
exp jk 2 a exp jk 2 a 1
transmitted reflected
where Then, eliminating B1 , A2 , B 2 from the
2m E V1 boundary condition equations, we find
k2 k3 4k12 4k 1 k 3
2
T
k1 k1 k 3 2 k1 k 3 2
Region III: V V 2
_______________________________________
2 3 x 2 m E V 2
3 x 0 2.40
x 2 2
(a) Region I: Since VO E , we can write
3 x A3 exp jk 3 x
2 1 x 2 m V O E
where
transmitted
1 x 0
x 2
2
2 m E V 2 Region II: V 0 , so
k3 2
2 2 x 2mE
2 x 0


There is no reflected wave in Region III. x 2
2
The transmission coefficient is defined as:
Region III: V 3 0
The general solutions can be written,
3 A3 A3* k 3 A3 A3*
T keeping in mind that 1 must remain
1 A1 A1* k 1 A1 A1*
finite for x 0 , as
From the boundary conditions, solve for A3 1 x B1 exp k1 x
in terms of A1 . The boundary conditions
are: 2 x A2 sin k 2 x B 2 cos k 2 x
At x 0 : 1 2
3 x 0
A1 B1 A2 B 2
where
1 2
2m V O E
x x k1 and
k 1 A1 k 1 B1 k 2 A2 k 2 B 2 2
At x a : 2 3 k2
2mE
A2 exp jk 2 a B 2 exp jk 2 a 2
(b) Boundary conditions
A3 exp jk 3 a At x 0 : 1 2 B1 B 2

1 2
k1 B1 k 2 A2
x x
At x a : 2 3

A2 sin k 2 a B 2 cos k 2 a 0
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
or

mo e
B 2 A2 tan k 2 a 3
(c)
k
k1 B1 k 2 A2 A2 1

B1

4o 2 n
(eV)
k2
and since B1 B 2 , then

2 22
k
A2 1 B2

k2

9.11 10 31 1.6 10 19 3

4 8.85 10 12
21.054 10
2 34 2
n2

From B 2 A2 tan k 2 a , we can write or
k 13.58
En
B 2 1 B 2 tan k 2 a
(eV)
n2
k2 n 1 E1 13.58 eV
or
n 2 E 2 3.395 eV
k
1 1 tan k 2 a n 3 E 3 1.51 eV
k2 n 4 E 4 0.849 eV
This equation can be written as _______________________________________
V E 2mE
1 O tan a 2.42
E 2 We have
or 3/2
1 1 r
E 2mE 100
exp

tan a ao ao
VO E 2 and
This last equation is valid only for specific P 4 r 2 100 100
*

values of the total energy E . The energy 3

levels are quantized. 1 1 2r
4 r 2

exp

_______________________________________ ao ao
or
2.41

mo e 4
4 2r

En
P r 2 exp

ao 3
ao

4o 2 n
(J)
To find the maximum probability
2 22 dP r
0
dr
2 2 2r

4

r exp
a

ao 3
a o o

2r
2r exp

ao
which gives
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 2
By D. A. Neamen Problem Solutions
______________________________________________________________________________________
r
0 1 r ao 3/ 2
ao 1 1 r
exp 0

or r a o is the radius that gives the greatest o a ao
probability. where
_______________________________________

2.43
oem
4 2
E E1 2 2 2
100 is independent of and , so the
wave

4o 2 2 oam o
equation in spherical coordinates reduces to

1 2 2m o
r 2 E V r 0
r 2 r r
where Then the above equation becomes
e
2 2
V r 3/ 2

4 o r m o a o r 1 1 r 1 r2

exp
2 2r
For ao ao r a o ao
3/2
1 1 r
100
exp

ao ao 2m o 2 2
0
Then
2 2m a m o a o r
3/ 2 o o
100 1 1 1 r



a exp a
or
r ao o o 3/2
1 1 r
so
exp

5/2 ao a o
100 1 1 r
r 2

r 2 exp

r ao ao 2 1 1 2
2 2 0
We then obtain a o r a o a o a o r
5/2
2 100 1 1 which gives 0 = 0 and shows that 100 is
r
r r ao

indeed a solution to the wave equation.
_______________________________________
r r2 r 2.44
2r exp
a
exp
a

a All elements are from the Group I column of
o o o
the periodic table. All have one valence
Substituting into the wave equation, we have electron in the outer shell.
_______________________________________

5/2
1 1 r r2 r

2r exp
exp
a
r2 ao ao ao o
2m o 2
E
2 mo ao r