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Giao Trinh Linh Kien Dien Tu PDF
Giao Trinh Linh Kien Dien Tu PDF
Li ni u
*********
Trng Vn Tm
Mc lc
---------
Chng I ..........................................................................................................................................................................................4
MC NNG LNG V DI NNG LNG.........................................................................................................................4
Chng II ......................................................................................................................................................................................12
S DN IN TRONG KIM LOI...........................................................................................................................................12
Chng III.....................................................................................................................................................................................22
CHT BN DN IN ...............................................................................................................................................................22
Chng IV .....................................................................................................................................................................................32
NI P-N V DIODE.....................................................................................................................................................................32
I. CU TO CA NI P-N:.................................................................................................................................................32
II. DNG IN TRONG NI P-N KHI C PHN CC: .............................................................................................34
1. Ni P-N c phn cc thun:.........................................................................................................................................35
2. Ni P-N khi c phn cc nghch: ................................................................................................................................38
III. NH HNG CA NHIT LN NI P-N:..............................................................................................................40
IV. NI TR CA NI P-N. ..................................................................................................................................................41
1. Ni tr tnh: (Static resistance). .......................................................................................................................................41
2. Ni tr ng ca ni P-N: (Dynamic Resistance)............................................................................................................42
V. IN DUNG CA NI P-N. ............................................................................................................................................44
1. in dung chuyn tip (in dung ni)...........................................................................................................................44
2. in dung khuch tn. (Difusion capacitance) ................................................................................................................45
VI. CC LOI DIODE THNG DNG.................................................................................................................................45
1. Diode chnh lu: ..............................................................................................................................................................45
2. Diode tch sng. ..............................................................................................................................................................53
3. Diode schottky:................................................................................................................................................................53
4. Diode n p (diode Zenner):............................................................................................................................................54
5. Diode bin dung: (Varicap Varactor diode)..................................................................................................................57
6. Diode hm (Tunnel diode)...............................................................................................................................................58
Bi tp cui chng ......................................................................................................................................................................59
Chng V.......................................................................................................................................................................................61
TRANSISTOR LNG CC .....................................................................................................................................................61
I. CU TO C BN CA BJT..........................................................................................................................................61
II. TRANSISTOR TRNG THI CHA PHN CC. ....................................................................................................61
III.C CH HOT NG CA TRANSISTOR LNG CC. .........................................................................................63
IV. CC CCH RP TRANSISTOR V LI DNG IN. .........................................................................................64
V. DNG IN R TRONG TRANSISTOR. ........................................................................................................................66
VI. C TUYN V-I CA TRANSISTOR. ...........................................................................................................................67
1. Mc theo kiu cc nn chung: .........................................................................................................................................68
2. Mc theo kiu cc pht chung. ........................................................................................................................................69
3. nh hng ca nhit ln cc c tuyn ca BJT. .......................................................................................................72
VII. IM IU HNH NG THNG LY IN MT CHIU...............................................................................73
VIII. KIU MU MT CHIU CA BJT. .............................................................................................................................78
CHNG 6 ...................................................................................................................................................................................91
TRANSISTOR TRNG NG..................................................................................................................................................91
I. CU TO CN BN CA JFET:....................................................................................................................................91
II. C CH HOT NG CA JFET: .................................................................................................................................93
III. C TUYN TRUYN CA JFET. ................................................................................................................................99
IV. NH HNG CA NHIT TRN JFET. ...............................................................................................................100
V. MOSFET LOI HIM (DEPLETION MOSFET: DE MOSFET)...................................................................................102
VI. MOSFET LOI TNG (ENHANCEMENT MOSFET: E-MOSFET) ............................................................................107
VII. XC NH IM IU HNH: ...................................................................................................................................111
VIII. FET VI TN HIU XOAY CHIU V MCH TNG NG VI TN HIU NH........................................113
IX. IN DN TRUYN (TRANSCONDUCTANCE) CA JFET V DEMOSFET. .......................................................117
X. IN DN TRUYN CA E-MOSFET. .......................................................................................................................118
XI. TNG TR VO V TNG TR RA CA FET. ........................................................................................................119
XII. CMOS TUYN TNH (LINEAR CMOS).......................................................................................................................120
XIII. MOSFET CNG SUT: V-MOS V D-MOS..............................................................................................................122
1. V-MOS: .........................................................................................................................................................................122
2. D-MOS: .........................................................................................................................................................................123
Bi tp cui chng ....................................................................................................................................................................125
CHNG VIII............................................................................................................................................................................148
LINH KIN QUANG IN T................................................................................................................................................148
I. NH SNG. ....................................................................................................................................................................148
II. QUANG IN TR (PHOTORESISTANCE)................................................................................................................149
III. QUANG DIOD (PHOTODIODE)....................................................................................................................................151
IV. QUANG TRANSISTOR (PHOTO TRANSISTOR). .......................................................................................................152
V. DIOD PHT QUANG (LED-LIGHT EMITTING DIODE)............................................................................................154
VI. NI QUANG....................................................................................................................................................................155
CHNG IX...............................................................................................................................................................................157
S LC V IC ........................................................................................................................................................................157
Chng I
MC NNG LNG V DI NNG LNG
Trong chng ny ch yu nhc li cc kin thc c bn v c hc nguyn lng,
s phn b in t trong nguyn t theo nng lng, t hnh thnh di nng lng
trong tinh th cht bn dn. hc chng ny, sinh vin ch cn c kin thc tng i
v vt l v ha hc i cng. Mc tiu cn t c l hiu c ngha ca di dn
in, di ha tr v di cm, t phn bit c cc cht dn in, bn dn in v cch
in.
mo=9,1.10-31Kg
mo
me =
v2
1 2
c
Mi in t chuyn ng trn mt ng trn v chu mt gia tc xuyn tm. Theo
thuyt in t th khi chuyn ng c gia tc, in t phi pht ra nng lng. S mt
nng lng ny lm cho qu o ca in t nh dn v sau mt thi gian ngn, in t
s ri vo nhn. Nhng trong thc t, cc h thng ny l mt h thng bn theo thi
gian. Do , gi thuyt ca Rutherford khng ng vng.
w 2 w1
f=
h
Trong , h=6,62.10-34 J.s (hng s Planck).
h
Trong mi qu o dng, moment ng lng ca in t bng bi s ca =h
2
h
Moment ng lng: m.v.r = n. = nh
2
v
-e
r
+e
Hnh 1
h2
+ ( E U ) = 0
2.m
l ton t Laplacien
2 2 2
= + +
x 2 y 2 z 2
E: nng lng ton phn
U: th nng
(E-U): ng nng
Trong khi gii phng trnh Schrodinger tm nng lng ca nhng in t trong
mt nguyn t duy nht, ngi ta thy rng mi trng thi nng lng ca electron ph
thuc vo 4 s nguyn gi l 4 s nguyn lng:
Nh vy: Tng K c ti a 2 in t.
Tng L c ti a 8 in t.
Tng M c ti a 18 in t.
Tng N c ti a 32 in t.
1 2 3 4 5 6 7
1s 2s 3s 4s 5s 6s 7s
2p 3p 4p 5p 6p 7p
3d 4d 5d 6d 7d
4f 5f 6f 7f
Hnh 2
Khi khng b kch thch, cc trng thi nng lng nh b in t chim trc (gn
nhn hn) khi ht ch mi sang mc cao hn (xa nhn hn). Th d: nguyn t Na c s
in t z=11, c cc ph tng 1s,2s,2p b cc in t chim hon ton nhng ch c 1
in t chim ph tng 3s.
Na
+11
Na 2-8-1
Si
+14
Si 2-8-4
GERMANIUM Ge32 1s2 2s2 2p6 3s2 3p6 4s2 3d10 4p2
Ge
+32
Ge 2-8-18-4
Hnh 3
Tng ngoi cng: Trong mt nguyn t, tng ngoi cng khng bao gi cha qu 8
in t. Nguyn t c 8 in t tng ngoi cng u bn vng (trng hp cc kh tr).
Nng lng E
4N trng thi 6N trng thi p
cha b chim Di dn in (2N trng thi b chim)
2p
Di cm EG Di cm
d0 d4 d3 d2 d1
Hnh 4
W
V=
Q
W
1V =
1,602 .10 -19
W = 1,602.10 19 Joule
Hnh 5
* Ta c 3 trng hp:
Th d: Germanium c EG=0,75eV
Silicium c EG=1,12eV
E (Nng lng)
Di dn in
EG>5eV Di cm Di dn in
EG<5eV
Di ho tr Di ho tr
Hnh 6
Chng II
S DN IN TRONG KIM LOI
Ni dung chnh ca chng ny l n li khi nim v linh ng ca in t, dn
sut ca kim loi, t a ra phng php kho st chuyn ng ca ht t bng nng
lng. Mc tiu cn t c l hiu r th nng ca in t trong kim loi, s phn b
in t theo nng lng, cng ra ca kim loi v tip th.
I. LINH NG V DN XUT:
Trong chng I, hnh nh ca di nng lng trong kim loi c trnh by.
Theo s kho st trn, di nng lng do in t chim c th cha y v khng c di
cm cho nhng nng lng cao. Ngha l in t c th di chuyn t do trong kim loi
di tc dng ca in trng.
+ + + +
E
+ + + +
Na
+ + + +
+ + + +
Hnh 1
Hnh trn v phn b in tch trong tinh th Na. Nhng ch gch cho tiu biu cho
nhng in t di ha tr c nng lng thp nht, nhng ch trng cha nhng in t
c nng lng cao nm trong di dn in. Chnh nhng in t ny l nhng in t
khng th ni thuc hn vo mt nguyn t nht nh no v c th di chuyn t do t
nguyn t ny sang nguyn t khc. Vy kim loi c coi l ni cc ion kt hp cht
ch vi nhau v xp u n trong 3 chiu trong mt m my in t m trong in
t c th di chuyn t do.
en
e1 e2
x
Hnh 2
1
V = gi l in tr sut ca kim loi
K A
5cm
v0
M(x)
0 EC = 2eV -
10V
+
Hnh 4
Mt diode l tng gm hai mt phng song song bng kim loi cch nhau 5 Cm.
Anod A c hiu in th l 10V so vi Catod K. Mt in t ri Catod K vi nng
lng ban u Ec=2eV. Tnh khong cch ti a m in t c th ri Catod.
Gi s, in t di chuyn ti im M c honh l x. in th ti im M s t l
vi honh x v in trng gia Anod v Catod u.
in th ti mt im c honh x l:
V = x +
Nn V = x
Suy ra th nng ti im M l:
1
T= mv 2 + U
2
Nng lng ny khng thay i. Trn th, T c biu din bng ng thng
song song vi trc x.
1
Hiu T U = mv 2 l ng nng ca in t. ng nng ny ti a ti im O
2
(Catod) ri gim dn v trit tiu ti im P c honh x0. Ngha l ti im x0, in t
dng li v di chuyn tr v catod K. Vy x0 l khong cch ti a m in t c th ri
xa Catod.
eV (Nng lng)
T
1
m.v 02
2
0 x0 = 1cm 5 cm x (cm)
Hnh 5
Ti im M (x=x0) ta c:
T-U=0
T=2.e.V
ke
U = eV =
r
-e U -e
r
0 r
Hnh 6
U in t t do
0
EB
U0
in t buc
V0 = 0 EB
Hnh 7
+
Hnh trn biu din s phn b .
n E dn E
Ta c: (E) = lim = (1)
E 0 E dE
( E ) 1
f (E) = = E E F
n (E)
1+ e KT
1,381.10 23
K= = 8,62.10 5 (V/ 0 K)
e
Nu E<EF, ta c f(E)=1
Nu E>EF, ta c f(E)=0
EF E EF E
Trang 18 Bin son: Trng Vn Tm
Hnh 8
+
Gio trnh Linh Kin in T
N(E) = .E 2 l hng s t l.
Lc , mt in t c nng lng E l:
1
(E ) = f (E ).N (E ) = .E .f (E )
2
0 0
3
( l f(E)=1 v T=00K)
= 6,8.1027
2
Do , E F = 3,64.10 19.n 3
d
n= .A 0 .v.10 6
A
Vi Tungsten, ta c:
18,8 3
n= .6,203.10 23.2.10 6 1,23.10 29 in t/m
184
( )
2
E F = 3,64.10 19. 1,23.10 29 3
E F 8,95eV
EW = EB-EF
E 25000K U
EB EW
EF EF EB
00K
0 (E) 0
Hnh 9
J th = A 0 T 2 e KT
Trong , A0 = 6,023.1023 v K = 1,38.10-23 J/0K
+ + - -
+ + - -
I II A B
+ + - -
EW1 EW2 + + - -
Ew1 < Ew2
V + + - - VA > VB
+ + - -
+-
Hnh 10
Gi s kim loi I c cng ra EW1 nh hn cng ra EW2 ca kim loi II. Khi ta ni hai
kim loi vi nhau, in t s di chuyn t (I) sang (II) lm cho c s t tp in t bn
(II) v c s xut hin cc Ion dng bn (I). Cch phn b in tch nh trn to ra mt
in trng Ei hng t (I) sang (II) lm ngn tr s di chuyn ca in t. Khi Ei
mnh, cc in t khng di chuyn na, ta c s cn bng nhit ng hc ca h thng
hai kim loi ni vi nhau. S hin hu ca in trng Ei chng t c mt hiu in th
gia hai kim loi.
Chng III
CHT BN DN IN
(SEMICONDUCTOR)
in t trong
di ha tr
Ni ha tr
in t t do trong
di dn in
Ni ha tr
b gy.
L trng trong
di ha tr
Di dn in in t trong
di dn in
Mc fermi
Di ha tr L trng trong
Di ha tr
nhit thp (00K) nhit cao (3000K)
Hnh 3
Gi s ta pha vo Si thun nhng nguyn t thuc nhm V ca bng phn loi tun
hon nh As (Arsenic), Photpho (p), Antimony (Sb). Bn knh nguyn t ca As gn
bng bn knh nguyn t ca Si nn c th thay th mt nguyn t Si trong mng tinh th.
Bn in t ca As kt hp vi 4 in t ca Si ln cn to thnh 4 ni ha tr, Cn d li
mt in t ca As. nhit thp, tt c cc in t ca cc ni ha tr u c nng
lng trong di ha tr, tr nhng in t tha ca As khng to ni ha tr c nng
lng ED nm trong di cm v cch dy dn in mt khang nng lng nh chng
0,05eV.
in t tha ca As E
trong di cm
Si Si Si Di dn in
0,05eV
Si As Si
1,12eV Mc fermi tng
in t tha ca As
Si Si Si
Di ha tr
Hnh 4: Tinh th cht bn dn nhit cao (T = 3000K) nhit T = 00K
Di ha tr
Hnh 5
Trang 24 Bin son: Trng Vn Tm
Gio trnh Linh Kin in T
Ta c: n = p + ND
Vi n: mt in t trong di dn in.
P: mt l trng trong di ha tr.
2. Cht bn dn loi P:
Si Si Si
L trng
Ni ha tr
khng c
Si In thnh lp
Si Si Si
Hnh 6
p = n + NA
p: mt l trng trong di ha tr.
n: mt in t trong di dn in.
3. Cht bn dn hn hp:
Di dn in
ED ND ED
EA NA EA
Di ha tr
Hnh 8
Trang 26 Bin son: Trng Vn Tm
Gio trnh Linh Kin in T
n+NA = p+ND
n.p = ni2
Nu ND > NA => n>p, ta c cht bn dn hn hp loi N.
Nu ND < NA => n<p, ta c cht bn dn hn hp loi P.
Ni ha tr b gy
Hnh 9
L trng mi
L
trng mi
Ni ha tr mi b gy
Trang 27 Bin son: Trng Vn Tm
Hnh 10
Gio trnh Linh Kin in T
+ - + -
V V
Hnh 11
J = n.e.v = n.e..E
Nh vy: J=e.(n.n+p.p).E
J = .E
=> = e.(n.n+p.p) c gi l dn sut ca cht bn dn.
M vkt
x
Hnh 12
dn
In kt = D n .e. A<0
Dng in khuch tn ca in t i qua A l: dx
Dn c gi l hng s khuch tn ca in t.
dn
Jn kt = e.D n .
dx
p
Tng t, trong mt giy c l trng b mt i, vi p l mt l trng v p l l i
p
sng trung bnh ca l trng.
p
G 1 = e.A.dx. (do ti hp)
p
ng thi in tch trong hp cng mt i mt lng:
G2=dIp (do khuch tn).
dx
A
Ip Ip+dIp
x+dx
x x
Ip
Gi g l mt l trng c sinh ra do tc dng nhit, trong mi giy, in tch trong hp
Hnh 13
tng ln mt lng l:
T1=e.A.dx.g
Vy in tch trong hp bin thin mt lng l:
p
T1 (G 1 + G 2 ) = e.A.dx.g e.A.dx. dIp
p
dp
bin thin bng: e.A.dx.
dt
Vy ta c phng trnh:
dp p dIp 1
=g . (1)
dt p dx e.A
Nu mu bn dn trng thi cn bng nhit v khng c dng in i qua, ta c:
P( x ) P0 = [P( x 0 ) P0 ].e
Lp
x0 x
Hnh 15
Chng IV
NI P-N V DIODE
(THE P-N JUNCTION AND DIODES)
I. CU TO CA NI P-N:
Hnh sau y m t mt ni P-N phng ch to bng k thut Epitaxi.
SiO2
(Lp cch in)
(1) (2)
Si-n+ Si-n+
(Thn)
SiO2 Lp SiO2 SiO2
b ra mt Anod Kim loi SiO2
(3) (4)
P
Si-n+ Si-n+
Trc tin, ngi ta dng mt thn Si-n+ (ngha l pha kh nhiu nguyn t cho).
Trn thn ny, ngi ta ph mt lp cch in SiO2 v mt lp verni nhy sng. Xong
ngi ta t ln lp verni mt mt n c l trng ri dng mt bc x chiu ln mt
n, vng verni b chiu c th ra c bng mt loi axid v cha ra mt phn Si-n+,
phn cn livn c ph verni. Xuyn qua phn khng ph verni, ngi ta cho khuch
tn nhng nguyn t nhn vo thn Si-n+ bin mt vng ca thn ny thnh Si-p. Sau
- +
- +
P N
V0
- +
- +
+
- - +
+
-
- +
x1 Ei x2
V0= Ro in th
Ti mi ni
x1 0 x2
Hnh 2
dp
J pkt = e.D p . >0
dx
v dng in tri ca l trng:
J ptr = e.p. p .E i < 0
Khi cn bng, ta c:
Jpkt+Jptr = 0
dn
e.Dn + e.n. n .Ei = 0
dx
Thng thng V0 0,7 volt nu ni P-N l Si
V0 0,3 volt nu ni P-N l Ge
- V +
Dng in t
N Vng him P
+ V0 -
R I
(Gii hn dng
in) - VS +
V V
P N
Jpp Jnn
V V0
VB Jnp Jnn
x1 x x1 x2 x
Hnh 3
dPn ( x )
J pn ( x ) = e.D p .
dx
Trong , Pn(x) l mt l trng trong vng N ti im x. Ta tnh Pn(x)
Ta dng phng trnh lin tc:
Pn Pn Pn 0 I p 1
= .
t p x e.A
d 2 Pn Pn Pn 0
= Trong L p = D p . p
dx 2 L2p
x x2
[ ]
Lp
V c nghim s l: Pn ( x) Pn0 = Pn ( x 2 ) Pn0 .e
dp
Ta chp nhn khi c dng in qua mi ni, ta vn c biu thc: dv = VT nh trong
p
trng hp ni cn bng.
Nn: Pn ( x 2 ) = Pn 0 .e VT
Do : J pn ( x 2 ) = e.D p .
1
Lp
[
P( x 2 ) Pn 0 ]
Dp VV
J pn ( x 2 ) = e. .Pn 0 .e T 1
Lp
Tng t, ta c:
J np ( x1 ) = e.D n .
1
Ln
[
n p ( x1 ) n p 0 ]
Dn V
J np ( x1 ) = e. .n p 0 e VT 1
Ln
Suy ra, mt dng in J trong mi ni P-N l:
J = J pn ( x 2 ) + J np ( x1 )
VT
V
DP Dn
J = e .p no + .n po .e 1
LP Ln
Nh vy, dng in qua mi ni P-N l:
VT
V
DP Dn
I = A .e .p no + .n po . e 1
LP Ln
D D
t: I 0 = A.e. P .p no + n .n po
LP Ln
V
Ta c: I = I 0 e VT 1
Phng trnh ny c gi l phng trnh Schockley
kT D p D n
Trong : VT = = =
e p n
Vi k = 1,381.10 23 J / 0 K l hng s Boltzman
e = 1,602.10 19 coulomb , l in tch ca electron
T l nhit tuyt i.
Vy, I I 0 .e VT
VV
I = I 0 e T 1
Vi = 1 khi mi ni l Ge
= 2 khi mi ni l Si
V VB
V0
- VS +
Hnh 4
Ngi ta cng chng minh c trong trng hp ni P-N phn cc nghch vi hiu
in th V<0, dng in qua ni l:
VV
I = I 0 e T 1
I0 cng c tr s:
D D
I 0 = A.e. P . p no + n .n po
LP Ln
V
VT
Thng thng, e << 1 nn I # I0
+5V
D2
I
+ V2 -
+ V1 -
D1
Hnh_5
VV
Vy: I = I0 e T 1 = I0 vi = 2 v VT = 0,026V
V2
e =2
0, 052
V2 = 0,693.0,052 = 0,036(V)
Khi hiu th phn cc thun cn nh, dng in I tng chm. Khi hiu th phn cc
thun ln, dng in I tng nhanh trong lc hiu in th hai u mi ni tng rt t.
Khi hiu th phn cc nghch cn nh, ch c 1 dng in r I0 chy qua. Khi hiu
in th phn cc nghch ln, nhng ht ti in sinh ra di tc dng ca nhit c
in trng trong vng him tng vn tc v c nng lng rt nhiu in t khc t
cc ni ha tr. C ch ny c chng cht, sau cng ta c mt dng in ngc rt ln, ta
ni ni P-N trung vng ph hy theo hin tng tuyt (avalanche).
I Ge Si
V
0,3V 0,7V
Vi chc A
Si Ge
I0
-8 -7 -6 -5 -4 -3 -2 -1
0 V 1
2
250C 3
4
350C 5
6
450C 7
550C 8
Hnh 7
2 t 25
p dng: I 0 ( t 0C) = I 0 (250 C).
10
2100 25
= 25nA.
10
= 25nA.181
I 0 (100 0 C) = 4,525A
2. Tnh cht ca ni P-N khi phn cc thun cng thay i theo nhit .
VD
= 2mV / 0 C
t
I(mA) 450C
350C
250C
IV. NI TR CA NI P-N.
Ngi ta thng ch n hai loi ni tr ca ni P-N
Vs I (mA)
Rs
I I Q
P
V
N 0 V V
Trang 41 Bin son: Trng Vn Tm
(Volt)
Hnh 9
Gio trnh Linh Kin in T
Ni tr ca ni ti im Q l:
V
RD =
I
V V
Hnh 10
I 1
t: = ;rd c gi l in tr ng ca ni P-N khi phn cc thun.
V rd
Vi tn hiu u nh, ta c:
V dV
rd = =
I dI Q
VV
Vi I = I 0 .e T 1
Suy ra:
dI 1 VV
= I0 .e T
dV
TV
Ngoi ra,
VV V
VT
I = I0 .e T
1 = I0 .e I0
V
Hay I + I0 = I0 .e VT
dI I + I0
Do , =
dV VT
V in tr ng l:
dI VT
rd = =
dV I + I0
VT
Thng thng, I >> I0 nn rd =
I
0
nhit bnh thng (25 C), VT = 26mV, in tr ng l:
.26mV
rd =
I(mA)
Vi dng in I kh ln, =1, in tr ng rd c th c tnh theo cng thc:
26mV
rd =
I(mA)
in tr ni
rp rd rn rac=ro
=
rac = rp+rn+rd
in tr vng P in tr vng N = rb+rd
Hnh 11
dV
rr =
dI Q
V. IN DUNG CA NI P-N.
1. in dung chuyn tip (in dung ni)
Q .A
CT = =
V Wd
K
CT =
(V0 + VR )n
Trong , K l hng s ty thuc vo cht bn dn v k thut ch to. V0 l ro
in th ca ni P-N (Si l 0,7V v Ge l 0,3V). VR l in th phn cc nghch.
1 1
n= trong trng hp ni P-N l dc li (linearly graded juntion) v n = trong trng
3 2
hp ni P-N thuc loi dc ng (brupt juntion).
C j (0)
CT = n
VR
1 +
V0
- +
+
- - +
+
-
- +
P - + N
VR # VS
RL P P
N N
- VS +
Ni P-N khi phn cc nghchTrang 44 Dc li Bin son:Dc ng
Trng Vn Tm
Hnh 12
Gio trnh Linh Kin in T
I
CD =
VT
L2P
Trong , = P = , l i sng trung bnh ca l trng; = 2 i vi ni P-N l
DP
Si, =1 i vi ni P-N l Ge.
Anod Catod
A K K hiu
P N
P N
Hnh 13
Trc khi xem qua mt s s chnh lu thng dng, ta xem qua mt s kiu mu
thng dng ca diode.
Trong trng hp ny, ngi ta xem nh in th ngang qua diode khi phn cc
thun bng khng v ni tr ca n khng ng k. Khi phn cc nghch, dng r cng
xem nh khng ng k.
0 VD
Hnh 14
0 VSW 0 VSW
Hnh 15
VS c tuyn
R R ID = ID
V-I
R
+ + +
VS VS 0V 0 VD
- - -
Phn cc thun
ID = 0 c tuyn
R R ID
V-I
+ + +
VS VS VD = -VS 0 VD
- - -
Phn cc nghch
Hnh 15
Trong kiu mu ny, in th ngang qua diode khi c phn cc thun l mt hng
s v c gi l in th ngng VK (khong 0,3V i vi diode Ge v 0,7 volt i vi
diode Si).
ID
+V - ID + VK -
VDVK
VD
0
VD<VK ID = 0
+ VK -
Hnh 16
VS VK
ID =
Diode l tng R
R R R
+ + + + +
VS VS VK VS VS>VK VK = VD
- - - - -
Hnh 17
ID + VD ID
Diode thc
ID -
Q 1 VD
r0 = =
o doc I D
0 VK VD 0 V0 VD
V0: in th offset
Diode l tng
+ VD
ID - + r0 - + V0
ID
VD= V0+r0ID
Hnh 18 - 19
Th d:
ID (mA)
6 Vs=15V
ID=4,77mA ID=?
5 Q R=3K
4 ID=4,67mA Q
3 +
2 VD=?
-
1
0 0,2 0,4 0,6 0,8 0,9 VD(volt)
Hnh 20
Gii:
Hnh 21
Bc 2: vi ID =4,77mA, ta xc nh c im Q (VD=0,9V)
Bc 3: v tip tuyn ti Q vi c tuyn tm in th offset V0.
V0=0,74V
Bc 4: Xc nh r0 t cng thc:
VD 0,9 0,74 0,16
r0 = = = 32
DI D 4,77 4,77
VS V 0 15 0,74 + r0=32
ID = = = 0,00467A VS=15V
R + r0 3000 + 32 -
+
ID=4,67mA VK= 0,74V
-
V VD=V0+r0ID=0,74+0,00467x32=0,89V Hnh 22
Ch :
r0=rac=rp+rn+rd=rB+rd
26mV
vi rd=
I D mA
50mV Vs=15V
R=3K
+ Vs(t) -
+
-50mV VD(t)?
-
Hnh 23
Gii:
rac 15,45
in th nh Vdm ngang qua diode l Vdm = Vm = .50
R + rac 15,45 + 3000
Vdm=0,256 Sint (mV).
Vy in th tng cng ngang qua diode l:
VD(t) = 700mV + 0,256 Sin t (mV).
VD(t) 0,256mV
R=3K
+
700mV
+
Vs(t) rac Vd(t)
- -
t
Hnh 24
30V +
+
RL VL(t)
Vs(t)
-
-
-30V
Bn k dng Diode dn
+30V
+30V
+
+
Vs(t) RL
-30V -
-
vS(t)
Diode ngng 0
+30V Bn k m
Diode dn
+
+
vL(t)
Vs(t) VL(t)=0 RL
Diode ngng
-
-
-30V 0
Hnh 25
Trang 50 Bin son: Trng Vn Tm
Gio trnh Linh Kin in T
Khi diode c dng vi ngun tn hiu xoay chiu tn hiu bin ln, kiu mu
tn hiu nh khng th p dng c. v vy, ngi ta dng kiu mu mt chiu tuyn
tnh.
vS(t) vS(t)
t(ms) t(ms)
vL(t) vL(t)
t(ms) t(ms)
Hnh 26
rB rd rB rr
A K A K
vS(t)
vf
i
+ Vd -
0 t
+
Vs(t) RL
-vr
-
vd
0,7V
t
0
-Vr
id
Vf
if =
RL
0 I0 t
ir
Vr
Hnh 28 ir =
RL
tr
vS(t) vS(t)
T=10tr
T=2tr t t
0 0
Tn hiu tn Tn hiu tn
s cao s thp
id(t) id(t)
t t
0 0
Hnh 29
3. Diode schottky:
Ta thy nh hng ca thi gian hi phc (tc thi gian chuyn mch) ln dng
sng ng ra ca mch chnh lu. rt ngn thi gian hi phc. Cc ht ti in phi di
chuyn nhanh, vng him phi hp. Ngoi ra, cn phi to iu kin cho s ti hp gia
l trng v in t d dng v nhanh chng hn. l nguyn tc ca diode schottky.
Anod Catod
SiO2 Nhm Tip xc Ohm
Anod Catod
N.Si
P-thn
Ro in th Schottky
Hnh 30
Ta thy trong diode schottky, thng ngi ta dng nhm thay th cht bn dn
loi P v cht bn dn loi N l Si. Do nhm l mt kim loi nn ro in th trong diode
schottky gim nh nn in th ngng ca diode schottky khong 0,2V n 0,3V.
l diode schottky c in th bo ho ngc ln hn diode Si v in th sp cng
nh hn diode Si.
Id (mA)
Diode Si
Schottky
VD (Volt)
0 0,2 0,4 0,6 0,7
Diode
Si Schottky
Hnh 31
ID (mA) + VD -
ID
Vng phn cc nghch Vng phn cc thun
VZ=Vzener VD (Volt)
0 VK=0,7V
V=-VD=VZ
- +
I=-ID=IZ
Hnh 32
* nh hng ca nhit :
VZ. Khi in th phn cc nghch nh hn hay bng in th VZ, diode Zener khng dn
in (ID=0).
+ VZ - + VZ - ID
-VZ
0 VD
IZ
VD=-VZ
Diode l tng
ID=-IZ
Hnh 34
Hnh 35
VS VZ 15 4,3
I= = = 22,8mA
R 470
Thc t, trong vng zener, khi dng in qua diode tng, in th qua zener cng
tng cht t ch khng phi c nh nh kiu mu l tng.
IZ
+ VZ - ZZ + VZ0 -
IZT
IZ
Diode l tng
VZ
0 VZ0 VZT
Hnh 36
Phn trn ta thy, s phn b in tch dng v m trong vng him thay i
khi in th phn cc nghch thay i, to ra gia hai u diode mt in dung:
Q A
CT = =
V Wd
C(pF)
c tuyn ca in dung theo
80 in th c dng nh sau:
60
40
20
0 -2 -4 -6 -8 -10 -12 -14 VR(Volt)
16
Hnh 37
R Ci
U Diode L L
bin dung
Hnh 38
B Thung lng
IV
V(volt)
0 VP 0,25 0,5V
Hnh 39
Khi phn cc nghch, dng in tng theo in th. Khi phn cc thun, in th
thp, dng in tng theo in th nhng khi ln n nh A (VP IP), dng in li t
ng gim trong khi in th tng. S bin thin nghch ny n thung lng B (VV IV).
Sau , dng in tng theo in th nh diode thng c cng cht bn dn cu to. c
tnh c th ca diode hm ty thuc vo cht bn dn cu to Ge, Si, GaAs (galium
Asenic), GaSb (galium Atimonic) Vng AB l vng in tr m (thay i t khong
50 n 500 mV). Diode c dng trong vng in tr m ny. V tp cht cao nn vng
him ca diode hm qu hp (thng khong 1/100 ln rng vng him ca diode
thng), nn cc ht ti in c th xuyn qua mi ni theo hin tng chui hm nn
c gi l diode hm.
-Rd
Ls RD
Cd
Hnh 40
Diode c vng him hp nn thi gian hi phc nh, dng tt tn s cao. Nhc
im ca diode hm l vng in tr m phi tuyn, vng in tr m li in th thp
nn kh dng vi in th cao, nng cht pha cao nn mun gim nh phi ch to
mng manh. Do , diode hm dn dn b diode schottky thay th.
Bi tp cui chng
1. Dng kiu mu l tng v in th ngng ca diode tnh dng in I1, I2, ID2 trong
mch in sau: I I
1 2
D1 /Si ID2
10V R2=350
D /Ge
2
R1=1K
2. Tnh dng in I1 v VO trong mch sau (dng kiu mu l tng v in th ngng ca
diode) +12V
I
VO
D1 /Si R1=1K
R2=3K
D2/Si
-12V I2
3. Tnh IZ, VO trong mch in sau khi R2 = 50 v khi R2 = 200. Cho bit Zener s dng
c VZ = 6V.
100
12V IZ
R2
+20V
R1=1K
I
R2=3K
Chng V
TRANSISTOR LNG CC
(BIPOLAR JUNCTION TRANSISTOR-BJT)
I. CU TO C BN CA BJT
Transistor lng cc gm c hai mi P-N ni tip nhau, c pht minh nm 1947
bi hai nh bc hc W.H.Britain v J.Braden, c ch to trn cng mt mu bn dn
Germanium hay Silicium.
B
B Cc nn (Base)
Transistor PNP
E C
Cc pht Cc thu
E p+ n p- C
Emitter Collecter
B
B Cc nn (Base)
Transistor NPN
Hnh 1
Ta nhn thy rng, vng pht E c pha m (nng cht ngoi lai nhiu), vng
nn B c pha t v vng thu C li c pha t hn na. Vng nn c kch thc rt hp
(nh nht trong 3 vng bn dn), k n l vng pht v vng thu l vng rng nht.
Transistor NPN c p ng tn s cao tt hn transistor PNP. Phn sau tp trung kho st
trn transistor NPN nhng i vi transistor PNP, cc c tnh cng tng t.
Hnh sau y m t vng him trong transistor NPN, s tng quan gia mc nng
lng Fermi, di dn in, di ho tr trong 3 vng, pht nn, thu ca transistor.
n+ p n-
Vng pht Vng nn Vng thu
Vng him
E(eV)
n+ Vng pht p Vng nn n- Vng thu
Di dn in
Di ho tr
Di dn in (Conductance band)
Mc Fermi xp thng
Di ho tr (valence band)
Hnh 2
Dng in t n+ p n-
IE IC
RE RC
IB
Dng in t
VEE VCC
Hnh 3
Ta c: I E = I C + I B
IE IC IC
IB
ra
vo ra vo
IE
IB
Hnh 4
vo ra
IC
h FE DC =
IB
Nh vy:
y: IC = DC.IB
Nhng: IE = IC + IB = DC.IB+IB
IE = (DC + 1).IB
li dng in trong cch rp cc nn chung c cho bi:
I
h FB DC = C
IE
* Ghi ch: cc cng thc trn l tng qut, ngha l vn ng vi transistor PNP.
Ta ch dng in thc chy trong hai transistor PNP v NPN c chiu nh sau:
NPN PNP
IC IC
IB IB
IE IE
Hnh 5
Th d:
Mt transistor NPN, Si c phn cc sau cho IC = 1mA v IB = 10A.
Tnh DC, IE, DC.
Gii: t phng trnh:
I 1mA
DC = C , Ta c: dc = = 100
IB 10A
T phng trnh:
Hnh 6
n+ p n- IC = DCIE + ICBO
DCIE
IE ICBO
IE
IB
RE RC
VEE VCC
Hnh 7
Hnh 8
VTrang 67 V2 Bin
V11 Ng vo 1
Ng ra V22son: Trng Vn Tm
Gio trnh Linh Kin in T
Mch in nh sau:
RE RC
IE IC
I1 I2
+ +
+
V1 V2
VEE VCC
+ VBE VCB
Hnh 10
Hnh 11
Nhn xt:
Vng tc ng
IC (mA)
6 6 mA
5 mA
5
4 mA
4
Vng bo ha
3 mA
3
2 mA
2
1 1 mA
ICBO IE= 0mA
0 2 4 6 8 VCB (V)
Vng ngng
Hnh 12
RC
RB IC
IB I2
+ +
I1
+ +
VCC
V1 V2
VBB
VBE VCB
Hnh 13
c tuyn ng vo:
80 VCE = 10V
60
40
20
VBE (V)
0 0,2 0,4 0,6 0,8
Hnh 14
c tuyn ng ra:
Vng tc ng
IC (mA)
120 A
6
100 A
5
80 A
4
60 A
Vng bo ha
3
40 A
2
20 A
1
ICEO IB= 0 A
0 2 4 6 8 VCE (V)
Vng ngng
Hnh 15
IC (mA)
VCE =10(V)
ICES = ICBO
VBE (V)
0
.1 .2 .3 .4 .5
6 7 8
Ngay c trong vng hot ng, khi VBE thay i mt lng nh (t dng IB thy i)
th dng IC thay i mt lng kh ln. V th, trong cc ng dng, ngi ta dng in
th cc nn VBE lm in th iu khin v cc B cn gi l cc khin.
250C 500C
IC (mA) 250A
IB (A)
500C 200A
250C
150A
(2,2mV/0C)
100A
50A
IB =0A
VBE (mV)
0 645 700 0 VCE (Volt)
IC (mA)
500C
(2,2mV/0C)
10
Hnh 17
VBE (mV)
0 645 700
Hnh 18
3. Mch ng ra:
VCB VCC
IC = +
RC RC
Ta ch rng:
VCC
Khi VCB = 0 I C = I SH = (Dng in bo ho)
RC
Khi IC = 0 (dng ngng), ta c: VCB = VCC = VOC
IC (mA)
IE = 6mA
IE = 5mA
IE = 4mA
V IE = 3mA
I SH = CC
RC Q IE = 2mA
IE = 1mA
0mA
0 VCBQ VCB(Volt)
VCB=VCC=VOC
Hnh 19
Mt s nhn xt:
thy nh hng tng i ca RC,VCC, IE ln im iu hnh, ta xem v d sau y:
IC
IE = 3mA
VEE = 1V VCC = 12V
Hnh 20
6
5
4
Q IE = 3mA
3
2
1 VOC
0 2 4 6 8 10 12 VCB(Volt)
IC (mA)
8
7
6
5
4
Q IE = 3mA
3
2
1
7,5V VOC
0 2 4 6 8 10 12 VCB(Volt)
IC (mA)
4
Q IE = 3mA
3
2
1 VOC
0 2 4 6 8 10 12 VCB(Volt)
Hnh 23
Hnh 24
3. nh hng ca IE ln im iu hnh:
Hnh 25
VCC
I C (sat ) = I SH =
RC
Lc ny, VCB gim rt nh v xp x bng 0V (tht s l 0,2V).
Khi IE gim th IC gim theo. Transistor i dn vo vng ngng, VCB lc gi l VCB(off)
v IC = ICBO.
E C E C
IE IC=DCIEIE
DCIE
B
Transistor NPN
B
E C
E C
IE IC=DCIEIE
DCIE
B
Transistor PNP
B
Hnh 26
Tuy nhin, khi tnh cc thnh phn dng in v in th mt chiu ca transistor,
ngi ta thng tnh trc tip trn mch in vi ch l in th thm VBE khi phn cc
thun l 0,3V i vi Ge v 0,7V i vi Si.
RE Si RC
- +
IE IC
0,7V + - VCB
VEE VCC
RE Si RC
+ -
IE IC
0,7V VCB
VEE - + VCC
Hnh 27
Ta dng 3 bc:
VEE 0,7
Mch nn pht (ng vo): I E = ; IC # DC # IE
RE
p dng nh lut kirchoff (ng ra), ta c:
Vi transistor NPN: VCB = VCC - RC.IC; VCB > 0
Vi transistor PNP: VCB = -VCC + RC.IC; VCB <0
Th d 2: Tnh dng in IB, IC v in th VCE ca mch cc pht chung.
RB RC
IB + IC
VCE
VBB - VCC
0,7V + -
RB RC
IB + IC
VCE
VBB + VCC
0,7V - -
Hnh 28
V 0,7
Mch nn pht (ng vo): I B = BB
RB
Dng IC = DC .IB
Mch thu pht (ng ra)
RE RC
C1 C2
+ - + - V
Tn hiu ra
+
Tn hiu vo V0(t)
~ V
VS(t)
-
Hnh 29
Hnh 30
Hnh 31 B
ib rb
ro
2. in dn truyn (transconductance)
ID(mA) IC(mA) = IE
ID=IO.exp(VD/VT) IC=ICES.exp(VBE/VT)
VD(volt) VBE(volt)
0 0
IC(mA)
ID=IO.exp(VD/VT) C
C
I C = I CES .e VT
gm = = CES .e VT
dVBE VT
IC
V g m = ( )
VT
IC
nhit bnh thng (250C) ta c: g m =
26mV
3. Tng tr vo ca transistor:
Hnh 34
ie = -iin
E C
+
vbe = -vin
- B
v in v be
R in = =
i in ie
Hnh 35
E re B E re B
- -
ie ie
rb
rb ib ie
+1
+ B + B
Hnh 36
v be r r + ( + 1)re
Vy: R in = = b + re = b
ie +1 +1
t: hie = rb+(+1).re
h
Suy ra: R in = ie
+1
rb
Do >>1, rb nh nn << re nn ngi ta thng coi nh:
+1
rb C
R in = re + re ib = iin
+1 B
Tng tr vo nhn t cc nn B: +
v be
R in =
ib
Hnh 37
B rb B rb B
B
+ -
ib ib
re ie ( + 1).re ib
- E + E
Hnh 38
v be
Vy: R in = = rb + ( + 1)re = h ie
ib
Ngi ta t: r=(1+).rere
Thng thng re>>rb nn: Rin=hie rre
26mV 26mV 1 1 1
Ngoi ra, re = = = ; Vy: r = v re =
IE IC IC gm gm gm
26mV
v 1
Ta ch thm l: re be = g m v be = i e i c = i b ; g m v be = i b
ie gm
nhng gi tr cao ca dng in cc thu IC, dng IC tng nhanh theo VCE (c tuyn c
dc ng).
nhng gi tr thp ca IC, dng IC tng khng ng k khi VCE tng (c tuyn gn nh
nm ngang).
IC(mA)
VCE(volt)
Early voltage 0 10 20 30
VCE = -VA = -200V 40 50
IC(mA)
Q
ICQ
IC = ICQ
VCE(volt)
0 VCEQ
Vi tn hiu c bin nh v tn s khng cao lm, ngi ta thng dng hai kiu
mu sau y:
ib ic
B C
rb
r gmvbe ro
vbe
Hnh 40(a)
Cng vi m hnh tng ng xoay chiu ca BJT, cc tng tr vo, tng tr ra, ta
c mch tng ng kiu re. Trong kiu tng ng ny, ngi ta thng dng chung
mt mch cho kiu rp cc pht chung v cc thu chung v mt mch ring cho nn
chung.
B ib ic C (E)
IE IC
IB IB
re ib ro
ra
vo ra vo
vbe
- Kiu cc nn chung
ie ic C IE IC
B
re ie ro
vo ra
Kiu cc nn chung
Hnh (c)
B
Thng ngi ta c th b ro trong mch tng ng khi RC qu ln.
Kiu thng s h: (h-parameter)
Nu ta coi vbe v ic l mt hm s ca iB v vCE, ta c:
vBE = f(iB,vCE) v iC = f(iB,vCE)
Ly o hm:
v v
v be = dv BE = BE di B + BE dv CE
i B v CE
i C i
i c = di C = di B + C dv CE
i B v CE
Trong kiu mu thng s h, ngi ta t:
v v i C i
h ie = BE ; h re = BE ; h fe = = ; h oe = C
i B v CE i B v CE
Vy, ta c:
vbe = hie.ib + hre.vce
ic = hfe.ib + hoe.vce
T hai phng trnh ny, ta c mch in tng ng theo kiu thng s h:
ib
B C
hie +
~ 1
hrevce hfeib
h oe
-
vbe vce
E
Hnh 41
hre thng rt nh ( hng 10-4), v vy, trong mch tng ng ngi ta thng b
hre.vce.
h ie = rb + ( + 1)re = rb + r
Do rb<<r nn hie = r
Nu b qua hre, ta thy:
v v
i b = be Vy: h fe i b = h fe . be
h ie h ie
vbe
Do , g m vbe = h fe ib = h fe ;
h fe
h fe
Hay gm =
h ie
1
Ngoi ra, r0 =
h oe
Cc thng s h do nh sn xut cho bit.
1
Trong thc hnh, r0 hay mc song song vi ti. Nu ti khng ln lm (khong
h oe
vi chc K tr li), trong mch tng ng, ngi ta c th b qua r0 (khong vi trm
K).
ib ic C ib ic C
B B
1
r gmvbe ro hie hfeib
h oe
vbe vbe
E E
Hnh 42
1
Mch tng ng n gin: (c th b r0 hoc )
h oe
Bi tp cui chng
RB RC
IC
430K 2K
=100/Si
1K RE
3. Tnh VB, VC, VE trong mch in:
+12V
RC
5K
VC
VB
=100/Si
RB VE
33K
1K RE
VBB 2V
CHNG 6
TRANSISTOR TRNG NG
(FIELD EFFECT TRANSISTOR)
Ngoi ra, ta cng kho st qua loi VMOS (MOSFET cng sut-Vertical chanel
MOSFET), CMOS v DMOS.
I. CU TO CN BN CA JFET:
M hnh sau y m t hai loi JFET: knh N v knh P.
Trong JFET knh N gm c hai vng n+ l hai vng ngun v thot. Mt vng n-
pha t tp cht dng lm thng l (knh) ni lin vng ngun v vng thot. Mt vng p-
nm pha di thng l l thn v mt vng p nm pha trn thng l. Hai vng p v p-
ni chung vi nhau to thnh cc cng ca JFET.
Thng l
(knh) N-
N+ N+
Thn p- (c ni vi cng)
Hnh 1
n
S D
D
p+ p+ G
n-
S
Knh p-
G
Tip xc kim loi
JFET Knh N
p
S D
D
n+ n+ G
p-
S
Knh n-
G
Tip xc kim loi S (Source): cc ngun
D (Drain): cc thot
Hnh 2 G (Gate): cc cng
G JFET B BJT
Knh N NPN
S Ngun Pht E
C
D
B BJT
G JFET
PNP
Knh P
E
S
Cng Nn
Hnh 3
Gate
p
n+ n+
S Knh n- D
Thn p-
Hnh 4
Ni P-N vng
VGS = 0V thot c phn
S G D cc nghch
n+ n- p n+
p-
Hnh 5
IS Dng in t t P Gate
ngun S i vo
thng l
Knh n- n+ thot
Thn P- (Gate)
Hnh 6
B rng W
S G D
Thng l c b dy T
Di L
Hnh 7
VDS (volt)
0 VP (Pinch-off voltage)
Hnh 8
P Gate
Knh n- n+ thot
Drain
Nhng electron b ht v
cc dng ca ngun in
Thn P- (Gate)
VDS
S G D
VGS
n+ n- p n+ Ni P-N vng
thot c phn
p- cc nghch
Hnh 10
ID
Thng l hp P Gate
hn nn in VGS = 0
tr ln hn. C IDSS
Knh n- n+ thot
ngha l ID v IS
Dng VGS < 0
nh hn cng
bo
mt tr VDS khi
ha ID
VGS m hn
gim
Thn P- (Gate) VDS
VP
P Gate VDS ng vi tr bo
ha gim
Thng l n-
n+ thot
Thng l nghn
tr VDS thp
hn khi VGS m
v thng l hp
hn Thn P- (Gate)
Hnh 11
Khi VDS cn nh, ID cng tng tuyn tnh theo VDS, nhng khi VDS ln, thng l b
nghn nhanh hn, ngha l tr s VDS thng l nghn nh hn trong trng hp
VGS=0V v do , dng in bo ho ID cng nh hn IDSS.
ID(mA)
VGS = 0V
c tuyn
|VDS| = |VP|-|VGS|
VGS = -1V
Vng bo ha (vng dng
in hng s)
VGS = -2V
VGS = -3V
VGS = -4V
VDS (volt)
0 VDS=VP=8V
VGS = VGS(off) = -8V
Hnh 12
VGS( off ) = VP
VDS + VGS = VP
Gate
p
n+ n+
S Knh n- D
Thn p-
Hnh 13
IE IC IE IS I D IS
E - VCE + C S - VDS + D
- + +
VBE - VCB VGS
+ -
IG (r) 0
IB nh
B G
Hnh 14
Hnh 15
Cc cc Cch mc
FET BJT FET BJT
Cc thot D Cc thu C Cc cng chung Cc nn chung
Cc ngun S Cc pht E Cc ngun chung Cc pht chung
Cc cng G Cc nn B Cc thot chung Cc thu chung
- +
I
D
G +
ID
+ VDS
-
VGS S
-
- +
V V
+ -
VGG VDD
Hnh 16
Trang 99 Bin son: Trng Vn Tm
Gio trnh Linh Kin in T
c tuyn
ID(mA) ng ra
12 VGS = 0V
9 VGS = -1V
c tuyn
truyn 6 VGS = -2V
VGS = -3V
3
VGS = -4V
VGS = -6V
VDS (volt)
-8 -6 -4 -2 0 2 4 6 8
VP VGS = VGS(off) = -8V
VGS(off)
Hnh 17
IV. NH HNG
NG CA NHIT TRN JFET.
Nh ta thy trong JFET, ngi ta dng in trng kt hp vi s phn cc
nghch ca ni P-N lm thay i in tr (tc dn in) ca thng l ca cht bn
dn. cng nh BJT, cc thng s ca JFET cng rt nhy i vi nhit , ta s kho st
qua hai tc ng chnh ca nhit :
Khi nhit tng, vng him gim, do rng ca thng l tng ln, do in
tr ca thng l gim. (ID tng)
Do thng l tng rng theo nhit nn VGS(off) cng tng theo nhit . Thc
nghim cho thy VGS( off ) hay VP tng theo nhit vi h s 2,2mV/10C.
2
VGS
T cng thc: I D = I DSS 1
VGS( off )
Cho thy tc dng ny lm cho dng in ID tng ln. Ngoi ra, do linh ng ca
ht ti in gim khi nhit tng lm cho in tr ca thng l tng ln nn dng in
IDSS gim khi nhit tng, hiu ng ny lm cho ID gim khi nhit tng.
Tng hp c hai hiu ng ny, ngi ta thy nu chn tr s VGS thch hp th dng
thot ID khng i khi nhit thay i. Ngi ta chng minh c tr s ca VGS l:
250 450
ID
VGS = 0
ID gim
VGS = -1V
|VGS| = |VP|-0,63V
ID tng
VDS
0
Hnh 18
ID ID
0 0
-55 C 25 C +150 C 0 VGS = -0V
(VDS c nh)
D
IGSS
G
VDS = 0V
S
VGG
Hnh 20
JFET cng c th iu hnh theo kiu tng (VGS dng i vi JFET knh N v m
i vi JFET knh P) nhng t khi c ng dng, v mc ch ca JFET l tng tr vo
ln, ngha l dng in IG cc cng - ngun trong JFET s lm gim tng tr vo, do
thng thng ngi ta gii hn tr s phn cc thun ca ni cng - ngun ti a l
0,2V (tr s danh nh l 0,5V).
-
+ VGG VDD
JFET knh N
iu hnh ID ID
VGS = 0,2V
kiu tng
IDSS VGS = 0V
iu hnh
VGS = -1V
kiu him
VGS = -2V
VGS = -3V
VGS VDS
-4V 0 0,2V 0
Hnh 21
ID
Phn cc kiu Phn cc kiu
tng him D
G -
(Ti a 0,2V) VDS
+ +
VGS S
- -
+
+ VGG
- VGG VDD
Hnh 22
Ta phn bit hai loi MOSFET: MOSFET loi him v MOSFET loi tng.
Hnh sau y m t cu to cn bn MOSFET loi him (DE - MOSFET) knh N v knh
P.
Knh n- S
K hiu
n+ n+
D
Thn ni vi
Thn p- ngun
G
DE-MOSFET knh N
S
Hnh 23
Knh p- S
K hiu
p+ p+
D
Thn ni vi
Thn n- ngun
G
DE-MOSFET knh P
S
Hnh 24
- VDD +
+ VGG -
S
G D
SiO2
iu
Knh n- hnh
n+ n+ theo
kiu
him
Thn p-
Thn p-
Hnh 25
- VDD +
- VGG +
S
G D
SiO2
iu in t tp trung
hnh n- di sc ht ngun
theo n+ n+ dng ca cc cng
kiu lm cho in tr
thng l gim
tng
Thn p-
Hnh 26
Khi VGS dng (iu hnh theo kiu tng), in tch dng ca cc cng ht cc
in t v mt tip xc cng nhiu, vng him hp li tc thng l rng ra, in tr thng
l gim nh. iu ny lm cho dng thot ID ln hn trong trng hp VGS = 0V.
DE-MOSFET knh N
ID (mA) ID (mA)
c tuyn c tuyn
truyn IDmax ng ra
VGS = +2V
Hnh 27
DE-MOSFET knh P
ID (mA) ID (mA)
c tuyn c tuyn
truyn IDmax ng ra
VGS = -2V
Hnh 28
S
K hiu
n+ n+
D
Thn ni vi
Thn p- ngun
G
E-MOSFET knh N
S
Thn U
Hnh 29
S
K hiu
p+ p+
D
Thn ni vi
Thn n- ngun
G
E-MOSFET knh P
S
Thn U
Hnh 30
Khi VGS < 0V, ( E-MOSFET knh N), do khng c thng l ni lin gia hai vng
thot ngun nn mc d c ngun in th VDD p vo hai cc thot v ngun, in t
cng khng th di chuyn nn khng c dng thot ID (ID # 0V). Lc ny, ch c mt
dng in r rt nh chy qua.
- VDD +
S
VGS = 0V G D
SiO2
n+ n+
Thn p-
Mch tng ng
Hnh 31
ID 10.10 3 A
K= = = 5,67.10 4
[VGS VGS( th ) ] [8 3,8]
2 2
V2
Vy dng thot ID v VGS l:
[
I D = K VGS VGS( th ) ]
2
= 5,67.10 4 [6 3,8]
2
ID = 2,74 mA
- VDD +
- VGG +
S
VGS VGS(th) G D
SiO2
Thng l tm thi
n+ n+
Thn p-
ID (mA) ID (mA)
c tuyn
IDmax ng ra
VGS = 7V
c tuyn VGS = 6V
truyn
VGS = 5V
VGS = 4V
VGS = 3V
VGS = 2V
VGS VDS (volt)
0 VGS(th) VGSmax 0
Hnh 32
VII. XC NH IM IU HNH:
Ta xem m hnh ca mt mch khuch i tn hiu nh dng JFET knh N mc theo
kiu cc ngun chung +VDD = 20V
RD = 820
C2
C1
v0(t)
+
vGS(t) -
~ RG 100K
-VGG = -1V
Hnh 33
RD = 820
IGSS +
+ VDS
VGS - -
RG 100K
VDD = 20V
VGG = -1V
Hnh 34
ID ID
VDD
I D ( sat ) = ng thng ly in
RD
IDSS IDSS
VGS = 0V
ng phn cc
VGS = -VGG = -1V ID Q
Q VGS = -1V
ID
VGS = -2V
VGS = -3V
VGS = -4V
VGS VDS
VGS(off) -1 0 0 VDS VDS(off) =VDD
Hnh 35
RD = 820
C2
vS(t) C1
+ v0(t)
+ vDS(t)
+10mV vS(t) -
vGS(t) -
t ~ RG 100K
0
-10mV
-VGG = -1V
Hnh 36
0 t
-0,99V
-1V
-1,01V
vGS(t) Hnh 37
theo tn hiu. thi im khi VGS t m hn, dng thot iD(t) tng v khi VGS m nhiu
hn, dng thot iD(t) gim. Vy dng in thot iD(t) thay i cng chiu vi vGS(t) v c
tr s quanh dng phn cc ID tnh (c gi s l 12,25mA). gia tng ca iD(t) v
gim ca iD(t) bng nhau vi tn hiu nh (gi s l 0,035mA). (Xem hnh trang sau).
vo (t)
AV =
vS ( t )
Trong trng hp ca th d trn:
v o ( t ) 0,0574VP P 180
o
AV = =
v S (t) 0,02VP P
AV=2,87 -180o
Ngi ta dng du - biu din lch pha 180o
ID(mA) vS(t)
0,01V
0 t
-0,01V
12,285mA
0 t
Q
12,215mA -0,99V
-1
-1,01V
-1V
VGS VGS(off) 0 vGS(t)
iD(t) (mA)
12,285
-1,01V -0.99V 12,250
12,215
VDD = +20V
t
0
RD = 820 iD(t)
vDS(t) (V)
v0(t)
0,0287V
0 t
Hnh 38
-0,0287V
Hnh 39
iD v gs iD vDS
iD = +
vGS Q vDS Q
Ngi ta t:
i D 1 i
gm = v = D
v GS Q ro v DS Q
1 1
Ta c: i d = g m v gs + v ds (co the at = go )
ro ro
vgs = r.ig
S
Hnh 40
S
Hnh 41
ID(mA)
dc ti im ID = IDSS l gmo
dc ti im Q l: IDSS
dI I D i
gm = D = = d(t )
dVGS VGS v gs ( t )
2
VGS
I D = I DSS 1
VGS( off )
Q ID
Hnh 42
Phng trnh trn cho ta thy s lin h gia in dn truyn gm vi dng in thot
ID ti im iu hnh Q. gmo c xc nh t cc thng s IDSS v VGS(off) do nh sn
xut cung cp.
X. IN DN TRUYN CA E-MOSFET.
Do cng thc tnh dng in thot ID theo VGS ca E-MOSFET khc vi JFET v
DE-MOSFET nn in dn truyn ca n cng khc.
Ta c: g m =
dI D
=
d
dVGS dVGS
[[
K VGS VGS( th ) ]]
2
[
g m = 2K VGS VGS( th ) ]
ID
Ngoi ra: VGS = + VGS( th )
K
Thay vo trn ta c: g m = 2 KI D
Trong :
gm: l in dn truyn ca E-MOSFET cho tn hiu nh
K: l hng s vi n v Amp/volt2
ID: Dng din phn cc cc thot D
I D2
Ta c: g m1 = 2 KI D1 v g m 2 = 2 KI D 2 nn: g m 2 = g m1
I D1
ID(mA)
IDmax
[
I D = K VGS VGS( th ) ]
2
Q
ID1 dc ti Q l gm1
Hnh 43
Nu gi VA l in th Early ta c:
V
ro = A ro : Tong tr ra cua FET
ID
ro nh vy thAy i theo dng thot ID v c tr s khong vi M n hn
10M
ID(mA) VGS
VDS(volt)
Early voltage 0
Hnh 44
- Do JFET thng c dng theo kiu him (phn cc nghch ni cng - ngun)
nn tng tr vo ln (hng trm M). Ring E-MOSFET v DE-MOSFET do cc cng
cch in hn khi cc ngun nn tng tr vo rt ln (hng trm M). Kt qu l ngi
ta c th xem gn ng tng tr vo ca FET l v hn.
Vi FET : r
S S
Hnh 45 (a) Hnh 45 (b)
id
G
D
S
Hnh 45 (c)
Q1 E-MOSFET
Q1 S1 knh P
Q2 E-MOSFET
G1 knh N
D1
Q2
vi(t) D2 v0(t)
G2
S2
Hnh 46
S2 S1
SiO2
G2 D2 D1 G1
n+ n+ p+ p+
p- Thn n-
Hnh 47
VDD = 15V
Q1 S1
vi(t) vo(t)
G1
5V D1 5V
Q2
vi(t) D2 v0(t)
0 t1 t G2 0 t1 t
S2
Hnh 48
VDD
VGG = = 7,5V
2
Hnh 49
VDD
VGG = = 7,5V
2
1. V-MOS:
n+ n+
n+ n+ p p
Thng l s
n-
hnh thnh
p- thn n+
Thot
Thng l s D
E-MOSFET knh N hnh thnh V-MOS knh N
Hnh 50
2. D-MOS:
Cng l mt loi E-MOSFET hot ng theo kiu tng, ng dng hin tng
khuch tn i (double-diffused) nn c gi l D-MOS. C cu trc nh sau:
n+ n+
p+ p+
Thng
n-
l s
Thn n+ hnh
thnh
Hnh 51
JFET MOSFET
V-MOS V-MOS
Knh N Knh P
CMOS
D-MOS D-MOS
Knh N Knh P
Bi tp cui chng
RD
5K
VD
IDSS = 4mA
VGS(off) = -4V
RG
1M 1K RE
RD
5K
RG VD IDSS = 4mA
VGS(off) = -4V
1M
2V
3. Trong mch in sau, tnh in th phn cc VD, VG. Cho bit E-MOSFET c h s
mA
k = 1 2 v VGS(th) = 3V.
V
24V 24V
RD
10M
5K
VG VD
2M
CHNG VII
LINH KIN C BN LP BN DN PNPN V
NHNG LINH KIN KHC
I. SCR (THYRISTOR SILICON CONTROLLED
RECTIFIER).
1. Cu to v c tnh:
Anod Anod
A A
P P E
C
N N N B
B
G P G P P C
Cng Cng E
(Gate) N (Gate) N
K K
Catod Catod
Cu to M hnh tng ng
A
A
T1
IC1
IC2
IB2
G G
T2
IG
K
IA
A
G P
Cng N
IG VAK
(Gate)
P
N
RG RA
K
VGG VAA
Hnh 2
Ngi ta ch c th ngt SCR bng cch ct ngun VAA hoc gim VAA sao cho
dng in qua SCR nh hn mt tr s no (ty thuc vo tng SCR) gi l dng in
duy tr IH (hodding current).
IA
Diode SCR
thng
VBR VAK
0 0,7V VBO
Hnh 3
3. Cc thng s ca SCR:
- Dng thun ti a:
- in th ngc ti a:
L dng thun ti thiu gi SCR trng thi dn in sau khi SCR t trng thi
ngng sang trng thi dn. Dng cht thng ln hn dng duy tr cht t SCR cng
sut nh v ln hn dng duy tr kh nhiu SCR c cng sut ln.
tt SCR, ngi ta gim in th VAK xung 0Volt, tc dng anod cng bng 0.
Th nhng nu ta h in th anod xung 0 ri tng ln ngay th SCR vn dn in mc
d khng c dng kch. Thi gian tt SCR l thi gian t lc in th VAK xung 0 n
lc ln cao tr li m SCR khng dn in tr li. Thi gian ny ln hn thi gian m,
thng khong vi chc S. Nh vy, SCR l linh kin chm, hot ng tn s thp, ti
a khong vi chc KHz.
- Tc tng in th dv/dt:
R
G
K
Hnh 4
Khi SCR hot ng in th xoay chiu tn s thp (th d 50Hz hoc 60Hz) th
vn tt SCR c gii quyt d dng. Khi khng c xung kch th mng in xung
gn 0V, SCR s ngng. D nhin bn k m SCR khng hot ng mc d c xung
kch.
V Ti
Ti L
V
Gc dn
~ 220V/50Hz
IG
IG Hnh 5
tng cng sut cho ti, ngi ta cho SCR hot ng ngun chnh lu ton k.
V Ti
Ti L
Gc dn
220V/50Hz
~
IG
IG Hnh 6
5. Vi ng dng n gin:
D2 SCR
T1
220V/ 6,3V
50Hz 6,3V D3 100uF
R3 1K
R2 150 + ACCU 6V
-
DEN
Hnh 7
Trang 131 Bin son: Trng Vn Tm
Gio trnh Linh Kin in T
Bnh thng n 6V chy sng nh ngun in qua mch chnh lu. Lc ny SCR ngng
dn do b phn cc nghch, accu c np qua D1, R1. Khi mt in, ngun in accu s lm
thng SCR v thp sng n.
D1 R1 47 2W R2 47 2W SCR2
6,3V
~220V
~ 110V SCR1 D3
6,3V
RR3
4 47
1K2W
D2
VR VZ = 11V
ACCU 12V
6V
+ 750
R3 1K
2W
50uF
-
Hnh 8
n n n
p p
p
n n + n
G
G p
p p
n n n
G T1 T1
Cng T1
u u u
(Gate) T2
T2 T2 + T2 -
+
IG IG
G G
G - +
T1 T1 T1
Hnh 9 T1
IA
T2 IH
V21
-VBO V21
0 0,7V +VBO
G
IG
T1
Hnh 10
- Tht ra, do s tng tc ca vng bn dn, Triac c ny theo 4 cch khc nhau,
c trnh by bng hnh v sau y:
+ + - -
T2 T2 T2 T2
G G G G
Hnh 11
Cch (1) v cch (3) nhy nht, k n l cch (2) v cch (4). Do tnh cht dn in
c hai chiu, Triac dng trong mng in xoay chiu thun li hn SCR. Th d sau y
cho thy ng dng ca Triac trong mng in xoay chiu.
+ VL -
VL Triac dn
Ti
220V/50Hz
. +
D1 R VR t
~
- .
D2
Gc dn
Hnh 12
Anod A
A
A A
P GA
N GA
GA GA
P Cng
GK Anod
Cng N GK GK
GK
Catod
K K
Catod K
K
Cu to K hiu M hnh tng ng
Hnh 13
Nh vy, khi ta p mt xung dng vo cng catod thi SCS dn in. Khi SCS ang
hot ng, nu ta p mt xung dng vo cng anod th SCS s ngng dn. Nh vy, i
vi SCS, cng catod dng m SCS, v cng anod dng tt SCS. Tuy c kh nng
nh SCR, nhng thng ngi ta ch ch to SCS cng sut nh (phn ln di vi trm
miniwatt) v do cng catod rt nhy (ch cn kch cng catod khong vi chc A) nn
SCS c ng dng lm mt switch in t nhy.
+12V
Relais ng 1K 1K 1K
mch bo Relay
ng
Hnh 15
ng vo thng ngi ta mc mt ming kim loi, khi s tay vo, SCS dn in
Led tng ng chy sng, Relais hot ng ng mch bo ng hot ng.
IV. DIAC
V cu to, DIAC ging nh mt SCR khng c cc cng hay ng hn l mt
transistor khng c cc nn. Hnh sau y m t cu to, k hiu v mch tng ng
ca DIAC.
p n
p
n
Hnh 16
VR
-VBO 0 V 110V/50Hz
220V/50Hz
+VBO
C
Hnh 18
Hnh 17
V. DIOD SHOCKLEY.
Diod shockley gm c 4 lp bn dn PNPN (diod 4 lp) nhng ch c hai cc. Cu
to c bn v k hiu cng vi c tuyn Volt-Ampere khi phn cc thun c m t
hnh v sau y:
Anod
A + A
P IA
N +
Vf
P
-
IBO
N
Vf
0 VBO
K
- K
Catod
Hnh 19
p dng thng thng ca Diod shockley l dng kch SCR. Khi phn cc
nghch, Diod shockley cng khng dn in.
Ti
R
110V/50Hz
220V/50Hz
Hnh 20
Anod
Anod
A
A
P
N G
Cng
P
G
Cng N
K
K
K hiu Catod
Catod
Hnh 21
Tuy c k hiu khc vi SCR v SCS nhng cc tnh cht th tng t. S khc bit
c bn cng l s tin b ca GTO so vi SCR hoc SCS l c th m hoc tt GTO ch
bng mt cng (m GTO bng cch a xung dng vo cc cng v tt GTO bng cch
a xung m vo cc cng).
- Mt tnh cht quan trng na ca GTO l tnh chuyn mch. Thi gian m ca
GTO cng ging nh SCR (khong 1s), nhng thi gian tt (thi gian chuyn t trng
thi dn in sang trng thi ngng dn) th nh hn SCR rt nhiu (khong 1s GTO
v t 5s n 30s SCR). Do GTO dng nh mt linh kinc chuyn mch nhanh.
GTO thng c dng rt ph bin trong cc mch m, mch to xung, mch iu ho
in th mch sau y l mt ng dng ca GTO to tn hiu rng ca kt hp vi
Diod Zener.
VAA=+200V
A
A
G
R1
VR K +Vo
K
VR
C1 R2
Hnh 22
Vo
VAA
VZ
0
Hnh 23
1. Cu to v c tnh ca UJT:
B2
Nn
B1 B2
E
E p
Pht n-
E B2 B1
Nn
B1 Hnh 24
Hnh 25
Vy in th ti im A l:
R B1
VA = VBB = .VBB > 0
R B1 + R B 2
R B1 R
Trong : = = B1 c gi l t s ni ti (intrinsic stand off)
R B1 + R B 2 R BB
RBB v c cho bi nh sn xut.
VE=VD+VA
VE VE
nh
VP VP
0
Thung
lng
VV VV
IP IV IE IV IE
0 0
Vng
in tr Hnh 26
m
Khi VE=VP, ni P-N phn cc thun, l trng t vng pht khuch tn vo vng n-
v di chuyn n vng nn B1, lc l trng cng ht cc in t t mass ln. V dn
in ca cht bn dn l mt hm s ca mt in t di ng nn in tr RB1 gim.
Kt qu l lc dng IE tng v in th VE gim. Ta c mt vng in tr m.
VE
in tr ng nhn t cc pht E trong vng in tr m l: rd =
I E
Khi IE tng, RB1 gim trong lc RB2 t b nh hng nn in tr lin nn RBB gim.
Khi IE ln, in tr lin nn RBB ch yu l RB2. Kt thc vng in tr m l vng
thung lng, lc dng IE ln v RB1 qu nh khng gim na (ch l dng ra cc
nn B1) gm c dng in lin nn IB cng vi dng pht IE ) nn VE khng gim m bt
u tng khi IE tng. Vng ny c gi l vng bo ha.
Nh vy ta nhn thy:
VEB1
+VBB VBB > VP
VEB1 REmax
REmin
VP
R
B2 Q
+
VEB1 B1 VV
- IE IE
0 0 IP IV
Hnh 27
V V VP VBB VP
Ta c: R E max = = BB =
I 0 IP IP
V V VV VBB VV
V R E min = = BB =
I 0 IV IV
VBB VV V VP
Nh vy: R E BB
IV IP
R B1 R
- T s ni ti: = = B1 T s ny cng c nh ngha khi cc pht E
R B1 + R B 2 R BB
h.
R2
B2
E
B1 VBB
R1
Hnh 28
Khi nhit tng, in tr lin nn RBB tng nn in th lin nn VB2B1 tng. Chn
R2 sao cho s tng ca VB2B1 b tr s gim ca in th ngng ca ni PN. Tr ca R2
(0,4 0,8)R BB
c chn gn ng theo cng thc: R 2
VBB
Ngi ta thng dng UJT lm thnh mt mch dao ng to xung. Dng mch v
tr s cc linh kin in hnh nh sau:
VB2
VE
C1 np C1 x (rt nhanh)
R2 330
VC1 = VP
R t
E 10K
VBB VB1
VB2 +12V
E t
VB1 VE
C1 .1 VP
t
R1 22
0
VV
t
Hnh 29
5,6K
Ti
20K
330 F1
B2
+ 100K UJT FUSE
470uF V=20V
z
- E
.1 B1
SCR
110V/50Hz
220V/50Hz
47
Hnh 30
Anod
A
Anod
A
P IA
G A
G R
N Cng R B2
Cng
P VAK
N K VAA VGK R
Catod K B1
K
Catod
Cu to K hiu Phn cc
Hnh 31
R B1
Ta c: VGK = VBB = VBB
R B1 + R B 2
R B1
Trong : = nh c nh ngha trong UJT
R B1 + R B 2
VG = VBB VP = VG + 0,7V
0 IP IV IA
Hnh 32
Tuy PUT v UJT c c tnh ging nhau nhng dng in nh v thung lng ca
PUT nh hn UJT
+VBB
A R
VA Np B2
G
VP X
K R
C B1
R
K
VV
t
0
Hnh 33
VG
VK = VBB
VK
VK = VP-VV
Hnh 34
CHNG VIII
LINH KIN QUANG IN T
Trong chng ny, chng ta ch cp n mt s cc linh kin quang in t thng
dng nh quang in tr, quang diod, quang transistor, led cc linh kin quang in t
qu c bit khng c cp n.
I. NH SNG.
Sng v tuyn trong h thng truyn thanh, truyn hnh, nh snh pht n tia X
trong y khoa Tuy c cc cng dng khc nhau nhng li c chung mt bn cht v
c gi l sng in t hay bc x in t. im khc nhau c bn ca sng in t l
c
tn s hay bc sng. Gia tn s v bc sng lin h bng h thc =
f
1 Lm = 1,496.10-10 watt
n v ca cng nh sng l foot-candles (fc), Lm/ft2 hay W/m2. Trong :
1 Lm/ft2 = 1 fc = 1,609.10-12 W/m2
in tr
105
10000
1000
1. Mch bo ng:
B+
Bng n hoc chung ti
R1
SCR
Ngun sng hng ngoi
Hnh 3
Bng n
15K DIAC
A
TRIAC
220V/50Hz
110V/50Hz
1K
.1
Hnh 4
Trang 150 Bin son: Trng Vn Tm
Gio trnh Linh Kin in T
I
R
K hiu Phn cc
Hnh 5
nhy (%)
100
Se Si Ge
75
50
25
0 (Ao)
2000 4000 6000 8000 10000 12000 14000
Dng in nghch mA
0,5
4000fc
0,4
3000fc
0,3
2000fc
0,2
1000fc
0,1 Dng ti L=0
0 in th phn cc nghch
Hnh 7
c tuyn V-I ca quang diod vi quang thng l thng s cho thy quang thng
nh khi in th phn cc nghch nh, dng in tng theo in th phn cc, nhng khi
in th phn cc ln hn vi volt, dng in gn nh bo ha (khng i khi in th
phn cc nghch tng). khi quang thng ln, dng in thay i theo in th phn cc
nghch. Tn s hot ng ca quang diod c th ln n hnh MHz. Quang diod cng
nh quang in tr thng c dng trong cc mch iu khin ng - m mch
in (dn in khi c nh sng chiu vo v ngng khi ti).
IC (mA)
Quang thng
5 5
N IC R
hf 4 4
P 3
B 3
VCC 2
N 2
1 1
volt
0 VCE
K hiu Phn cc c tuyn V-I
Hnh 8
C nhiu loi quang transistor nh loi mt transistor dng chuyn mch dng
trong cc mch iu khin, mch m loi quang transistor Darlington c nhy rt
cao. Ngoi ra ngi ta cn ch to cc quang SCR, quang triac
A T2
G
K T1
Quang transistor Quang Darlington Quang SCR Quang TRIAC
Hnh 9
1. Quang k:
K
5K
9V
Hnh 10
2. ng hay tt Relais:
+12V +12V
C C
Relay Relay
.1 R .1
T2
R
T2
T1 T1
Hnh 11
Di ha tr
Hnh 12
c nh sng lin tc, ngi ta phn cc thun LED. Ty theo vt liu cu to,
in th thm ca LED thay i t 1 n 2.5V v dng in qua LED ti a khong vi
mA.
VI. NI QUANG.
(OPTO COUPLER-PHOTOCOUPLER-OPTOISOLATOR)
1 6 1 6
2 5 2 5
3 4 3 4
1 6 1 6
2 5 2 5
3 4 3 4
270
6
150 1
Ti
U1
In 3V 30V
2
510
Q1 MOC3021
4
510
51
110Vrms
220VAC
Hnh 15
- Khi LED sng, ni quang hot ng kch hai SCR hot ng (mi SCR hot ng
mt bn k khi c xung kch t ni quang) cp dng cho ti.
- Khi LED tt, ni quang ngng, 2 SCR ngng, ngt dng qua ti.
CHNG IX
S LC V IC
I. KHI NIM V IC - S KT T TRONG H THNG
IN T.
IC (Intergated-Circuit) l mt mch in t m cc thnh phn tc ng v th ng
u c ch to kt t trong hoc trn mt (subtrate) hay thn hoc khng th tch
ri nhau c. ny, c th l mt phin bn dn (hu ht l Si) hoc mt phin cch
in.
1 1 1 1
= + + ...... +
t t1 t2 tn
ti
Nu t1=t2=...=tn th t =
n
im hn, ni).
- Tng cht lng (do gi thnh h, cc mt phc tp hn c th c chn h thng
t n nhng tnh nng tt nht).
- Cc linh kin c phi hp tt (matched). V tt c cc transistor c ch to ng
thi v cng mt qui trnh nn cc thng s tng ng ca chng v c bn c cng
ln i vi s bin thin ca nhit .
- Tui th cao.
Trn mt bng cht cch in, dng cc lp mng to nn cc thnh phn khc.
Loi ny ch gm cc thnh phn th ng nh in tr, t in, v cun cm m thi.
i khi ngi ta c th thm nhng thnh phn khc hn ca cc thnh phn k trn
dng cho cc mc ch c th
T vi mch mng mng (ch cha cc thnh phn th ng), ngi ta gn ngay trn
ca n nhng thnh phn tch cc (transistor, diode) ti nhng ni dnh sn. Cc
transistor v diode gn trong mch lai khng cn c v hay ring, m ch cn c bo
v bng mt lp men trng.
u im ca mch lai l:
Thc ra khi ch to, ngi ta c th dng qui trnh phi hp. Cc thnh phn tc
ng c ch to theo cc thnh phn k thut planar, cn cc thnh phn th ng th
theo k thut mng. Nhng v qu trnh ch to cc thnh phn tc ng v th ng
c thc hin khng ng thi nn cc c tnh v thng s ca cc thnh phn th
ng khng ph thuc vo cc c tnh v thng s ca cc thnh phn tc ng m ch
ph thuc vo vic la chn vt liu, b dy v hnh dng. Ngoi ra, v cc transistor ca
IC loi ny nm trong , nn kch thc IC c thu nh nhiu so vi IC cha transistor
ri.
Bc 1:
SiO2
25 75mm 0.5m
0.025mm n - Si n - Si
Bc 2:
uv
Dng phng php quang khc kh lp SiO2 film
mt s ch nht nh, to ra cc ca s b mt tinh Cht cm
th. T cc ca s, c th khuch tn tp cht vo. quang
SiO2 P-Si
u tin, v s nhng ni cn m ca s, n-Si
chp hnh s ri ly phim m bn, thu nh li.
Nhng ni cn m ca s l vng ti trn phim Ha tan Rn li
Cht cm
quang
SiO2 P-Si
a. Bi mt lp cn quang trn b mt. t phim trn ri
tia cc tm vo nhng ni cn m ca s c lp en trn n-Si
phim bo v. Nhng tinh th vo dung dch tricloetylen.
Ch nhng ni cn m ca s lp cn quang mi b ha tan, Ha tan
cc ni khc rn li.
b.Li em tinh th nhng vo dung dch fluorhydric. Ch
nhng ni cn m ca s lp SiO2 b ha tan, nhng ni SiO2
khc nh lp cn quang che ch. P-Si
n-Si
c. em ty lp cn quang
d. Khuch tn cht bn dn P su n thn, to ra cc o
N. Khuch tn p
e. Li m ca s, khuch tn cht bn dn P vo cc o N
(khuch tn Base) SiO2
f. Li m ca s, khuch tn cht bn dn N vo (khuch n Thn n
o P
tn Emitter)
g. Ph kim loi. Thc hin cc ch ni
Khuch tn Base
Th d:
Mt mch in n gin nh sau, c ch to di dng SiO2
IC n tinh th. p Nn p
P
n n
2 3 4 Khuch tn Emitter
R SiO2
1 n n
p p
D1 D1 Nn
n n
Hnh 3 5 P
Hnh 2
B B B B
n+ n+ n+ n+ n+
SiO2
Base
B
p p p
n n n Collector
Thn p
1. IC Digital:
2. IC analog:
L loi IC x l tn hiu Analog, l loi tn hiu bin i lin tc so vi IC Digital, loi
IC Analog pht trin chm hn. Mt l do l v IC Analog phn ln u l mch chuyn dng
(special use), tr mt vi trng hp c bit nh OP-AMP (IC khuch i thut ton), khuch
i Video v nhng mch ph dng (universal use). Do tho mn nhu cu s dng, ngi
ta phi thit k, ch to rt nhiu loi khc nhau.