Professional Documents
Culture Documents
Page 1
TWO PORT NETWORKS h-PARAMETER BJT MODEL
Page 2
BJT Hybrid Model
Hybrid Model
All frequencies
Better model than h
parameter model since it
contains frequency
sensitive components.
These are ac small signal
parameters which are
determined at the Q point
Parasitic Resistances
rb = rbb = ohmic
resistance
voltage drop in
base region caused by transverse flow of majority carriers, 50 rb 500
rc = rce = collector emitter resistance change in Ic due to change in Vc, 20 rc 500
rex = emitter lead resistance important if IC very large, 1 rex 3
Parasitic Capacitances
Cje0 = Base-emitter junction (depletion layer) capacitance, 0.1pF Cje0 1pF
C0 = Base-collector junction capacitance, 0.2pF C0 1pF
Ccs0 = Collector-substrate capacitance, 1pF Ccs0 3pF
Cje = 2Cje0 (typical)
0 = .55V (typical)
F = Forward transit time of minority carriers, average of lifetime of holes and electrons, 0ps
F 530ps
Cb =
C 0
C =
Vcb
1+
0
Ccs0
Ccs =
Vcs
1+
0
Cb = F gm
Page 3
BJT Hybrid Model
IC
gm =
VT
kT
VT = = 26mV @ 300K
q
IC
gm =
26mV
(26mV) () 26mV
r = =
IC IB
= gm r
v
ic = = gm v
r
VA
ro = where 50 VA 100
IC
fT = Gain Bandwidth Product (spec sheet is 300MHz)
C corresponds approximately to COBO (on spec sheet is 8pF for 2N2222A)
CB = collector base time constant (spec sheet is 150ps for 2N2222A)
CB
rb =
C
C = - C
2 r fT
Page 4
BJT Hybrid Model
Page 5
BJT Hybrid Model
0
(j)
c + c
0 j
gm
gm
(j)
(c + c) j
(j) = 1 when = T
gm
T =
c + c
gm
fT =
2 ( c + c )
Page 6