TIC126 SERIES

SILICON CONTROLLED RECTIFIERS

12 A Continuous On-State Current

100 A Surge-Current TO-220 PACKAGE

(TOP VIEW)
Glass Passivated Wafer

400 V to 800 V Off-State Voltage K 1

A 2
Max IGT of 20 mA
G 3

This series is currently available, but

not recommended for new designs. Pin 2 is in electrical contact with the mounting base.
MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
TIC126D 400
TIC126M 600
Repetitive peak off-state voltage VDRM V
TIC126S 700
TIC126N 800
TIC126D 400
TIC126M 600
Repetitive peak reverse voltage VRRM V
TIC126S 700
TIC126N 800
Continuous on-state current at (or below) 70C case temperature (see Note 1) IT(RMS) 12 A
Average on-state current (180 conduction angle) at (or below) 70C case temperature
IT(AV) 7.5 A
(see Note 2)
Surge on-state current at (or below) 25C case temperature (see Note 3) ITM 100 A
Peak positive gate current (pulse width 300 s) IGM 3 A
Peak gate power dissipation (pulse width 300 s) PGM 5 W
Average gate power dissipation (see Note 4) PG(AV) 1 W
Operating case temperature range TC -40 to +110 C
Storage temperature range Tstg -40 to +125 C
Lead temperature 1.6 mm from case for 10 seconds TL 230 C

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70C derate linearly to zero at 110C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70C derate
linearly to zero at 110C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.

APRIL 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.
1
TIC126 SERIES
SILICON CONTROLLED RECTIFIERS

electrical characteristics at 25C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Repetitive peak
IDRM VD = rated VDRM TC = 110C 2 mA
off-state current
Repetitive peak
IRRM VR = rated VRRM IG = 0 TC = 110C 2 mA
reverse current
IGT Gate trigger current VAA = 12 V RL = 100 tp(g) 20 s 8 20 mA
VAA = 12 V RL = 100 TC = - 40C
2.5
tp(g) 20 s
VAA = 12 V RL = 100
VGT Gate trigger voltage 0.8 1.5 V
tp(g) 20 s
VAA = 12 V RL = 100 TC = 110C
0.2
tp(g) 20 s
VAA = 12 V TC = - 40C
100
Initiating IT = 100 mA
IH Holding current mA
VAA = 12 V
40
Initiating IT = 100 mA
VT On-state voltage IT = 12 A (see Note 5) 1.4 V
Critical rate of rise of
dv/dt VD = rated VD IG = 0 TC = 110C 400 V/s
off-state voltage
NOTE 5: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.

thermal characteristics
PARAMETER MIN TYP MAX UNIT
RJC Junction to case thermal resistance 2.4 C/W
RJA Junction to free air thermal resistance 62.5 C/W

 


APRIL 1971 - REVISED SEPTEMBER 2002
2 Specifications are subject to change without notice.
 TIC126 SERIES
SILICON CONTROLLED RECTIFIERS

THERMAL INFORMATION

AVERAGE ON-STATE CURRENT MAX ANODE POWER LOSS

DERATING CURVE vs
ON-STATE CURRENT
TI03AE TI03AF
16 100

PA - Max Continuous Anode Power Dissipated - W

IT(AV) - Maximum Average On-State Current - A

TJ = 110C
14
Continuous DC
12

10
10

8 = 180

6
1
4
0 180

2 Conduction
Angle
0 01
30 40 50 60 70 80 90 100 110 01 1 10 100
TC - Case Temperature - C IT - Continuous On-State Current - A
Figure 1. Figure 2.

SURGE ON-STATE CURRENT TRANSIENT THERMAL RESISTANCE

vs vs
CYCLES OF CURRENT DURATION CYCLES OF CURRENT DURATION
TI03AG TI03AH
100 10
RJC(t) - Transient Thermal Resistance - C/W
ITM - Peak Half-Sine-Wave Current - A

10 1

TC 70C
No Prior Device Conduction
Gate Control Guaranteed
1 0.1
1 10 100 1 10 100
Consecutive 50 Hz Half-Sine-Wave Cycles Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 3. Figure 4.

 


APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIC126 SERIES
SILICON CONTROLLED RECTIFIERS

TYPICAL CHARACTERISTICS

GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE

vs vs
CASE TEMPERATURE CASE TEMPERATURE
TC03AA TC03AB
1

VAA = 12 V
RL = 100
IGT - Gate Trigger Current - mA

08

VGT - Gate Trigger Voltage - V

tp(g) 20 s

10
06

04

VAA =12 V
RL = 100
02
tp(g) 20 s

1 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
TC - Case Temperature - C TC - Case Temperature - C

Figure 5. Figure 6.

HOLDING CURRENT PEAK ON-STATE VOLTAGE

vs vs
CASE TEMPERATURE PEAK ON-STATE CURRENT
TC03AD TC03AH
100 25

VAA = 12 V TC = 25 C
tp = 300 s
Initiating IT = 100 mA
VTM - Peak On-State Voltage - V

2 Duty Cycle 2 %
IH - Holding Current - mA

15

10

05

1 0
-50 -25 0 25 50 75 100 125 01 1 10 100
TC - Case Temperature - C ITM - Peak On-State Current - A
Figure 7. Figure 8.

 


APRIL 1971 - REVISED SEPTEMBER 2002
4 Specifications are subject to change without notice.